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1. 发明授权

US07973346B2 Image sensor with self-boosting transfer transistor gate and methods of operating and fabricating the same 有权
标题翻译：具有自增强传输晶体管栅极的图像传感器及其操作和制造方法
公开(公告)号：US07973346B2
公开(公告)日：2011-07-05
申请号：US11335925
申请日：2006-01-18
申请人： Young-Hoon Park , Won-Je Park , Tae-Seok Oh , Jae-Ho Song
发明人： Young-Hoon Park , Won-Je Park , Tae-Seok Oh , Jae-Ho Song
IPC分类号： H01L31/062 , H01L31/06
CPC分类号： H01L27/14609 , H01L27/14632 , H01L27/14656 , H01L27/14687 , H04N5/3597 , H04N5/3745
摘要： Disclosed is a image sensor (e.g., a CMOS image sensor) including pixels each having a transfer transistor and a drive transistor, in which the gate of at least one of the transistors has a boosting gate disposed over it comprised of a conductive film pattern with interposing an insulation film. Thus, a voltage applied to the boosting gate is capacitively coupled to at least one of the transfer gate of the transfer transistor and a drive gate of the drive transistor. The transfer gate is supplied with the sum of the transfer voltage and the boosting gate-coupling voltage as a result and there is no need for providing a high voltage generator for the image sensor. The dynamic range of operation may be enhanced if such a coupling voltage is applied to the drive gate of the drive transistor.
摘要翻译：公开了包括各自具有传输晶体管和驱动晶体管的像素的图像传感器（例如，CMOS图像传感器），其中至少一个晶体管的栅极具有设置在其上的升压栅极，该升压栅极包括导电膜图案，插入绝缘膜。因此，施加到升压栅极的电压电容耦合到传输晶体管的传输栅极和驱动晶体管的驱动栅极中的至少一个。因此，转移栅极被提供有转印电压和升压栅极耦合电压的总和，并且不需要为图像传感器提供高电压发生器。如果将这样的耦合电压施加到驱动晶体管的驱动栅极，则可以增强动态动作范围。

2. 发明申请

US20060157761A1 Image sensor with self-boosting and methods of operating and fabricating the same 有权
标题翻译：具有自增强功能的图像传感器及其操作和制造方法
公开(公告)号：US20060157761A1
公开(公告)日：2006-07-20
申请号：US11335925
申请日：2006-01-18
申请人： Young-Hoon Park , Won-Je Park , Tae-Seok Oh , Jae-Ho Song
发明人： Young-Hoon Park , Won-Je Park , Tae-Seok Oh , Jae-Ho Song
IPC分类号： H01L31/062
CPC分类号： H01L27/14609 , H01L27/14632 , H01L27/14656 , H01L27/14687 , H04N5/3597 , H04N5/3745
摘要： Disclosed is a image sensor (e.g., a CMOS image sensor) including pixels each having a transfer transistor and a drive transistor, in which the gate of at least one of the transistors has a boosting gate disposed over it comprised of a conductive film pattern with interposing an insulation film. Thus, a voltage applied to the boosting gate is capacitively coupled to at least one of the transfer gate of the transfer transistor and a drive gate of the drive transistor. The transfer gate is supplied with the sum of the transfer voltage and the boosting gate-coupling voltage as a result and there is no need for providing a high voltage generator for the image sensor. The dynamic range of operation may be enhanced if such a coupling voltage is applied to the drive gate of the drive transistor.
摘要翻译：公开了包括各自具有传输晶体管和驱动晶体管的像素的图像传感器（例如，CMOS图像传感器），其中至少一个晶体管的栅极具有设置在其上的升压栅极，该升压栅极包括导电膜图案，插入绝缘膜。因此，施加到升压栅极的电压电容耦合到传输晶体管的传输栅极和驱动晶体管的驱动栅极中的至少一个。因此，转移栅极被提供有转印电压和升压栅极耦合电压的总和，并且不需要为图像传感器提供高电压发生器。如果将这样的耦合电压施加到驱动晶体管的驱动栅极，则可以增强动态动作范围。

3. 发明申请

US20070075338A1 Image sensor and fabrication method thereof 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US20070075338A1
公开(公告)日：2007-04-05
申请号：US11542340
申请日：2006-10-03
申请人： Young-Hoon Park , Jae-Ho Song , Won-Je Park , Jin-Hyeong Park , Jeong-Hoon Bae , Jung-Ho Park
发明人： Young-Hoon Park , Jae-Ho Song , Won-Je Park , Jin-Hyeong Park , Jeong-Hoon Bae , Jung-Ho Park
IPC分类号： H01L29/768
CPC分类号： H01L27/1463 , H01L27/14603 , H01L27/14609 , H01L27/14643 , H01L27/14689
摘要： An image sensor includes a substrate having an active pixel sensor region defined therein, a plurality of first conductivity type photodiodes formed in the active pixel sensor region and a first conductivity-type first deep well formed in the active pixel sensor region in a location which does not include the plurality of the first conductivity-type photodiodes. Moreover, the first deep well is electrically connected to a positive voltage.
摘要翻译：图像传感器包括其中限定有活性像素传感器区域的基板，形成在有源像素传感器区域中的多个第一导电型光电二极管和形成在有源像素传感器区域中的第一导电类型的第一深阱，不包括多个第一导电型光电二极管。此外，第一个深阱电连接到正电压。

4. 发明授权

US07687837B2 Image sensor and fabrication method thereof 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US07687837B2
公开(公告)日：2010-03-30
申请号：US11542340
申请日：2006-10-03
申请人： Young-Hoon Park , Jae-Ho Song , Won-Je Park , Jin-Hyeong Park , Jeong-Hoon Bae , Jung-Ho Park
发明人： Young-Hoon Park , Jae-Ho Song , Won-Je Park , Jin-Hyeong Park , Jeong-Hoon Bae , Jung-Ho Park
IPC分类号： H01L31/113
CPC分类号： H01L27/1463 , H01L27/14603 , H01L27/14609 , H01L27/14643 , H01L27/14689
摘要： An image sensor includes a substrate having an active pixel sensor region defined therein, a plurality of first conductivity type photodiodes formed in the active pixel sensor region and a first conductivity-type first deep well formed in the active pixel sensor region in a location which does not include the plurality of the first conductivity-type photodiodes. Moreover, the first deep well is electrically connected to a positive voltage.
摘要翻译：图像传感器包括其中限定有活性像素传感器区域的基板，形成在有源像素传感器区域中的多个第一导电型光电二极管和形成在有源像素传感器区域中的第一导电类型的第一深阱，不包括多个第一导电型光电二极管。此外，第一个深阱电连接到正电压。

5. 发明授权

US07462520B2 Methods of fabricating an image sensor 失效
标题翻译：制作图像传感器的方法
公开(公告)号：US07462520B2
公开(公告)日：2008-12-09
申请号：US11464244
申请日：2006-08-14
申请人： Won-Je Park , Jae-Ho Song , Young-Hoon Park
发明人： Won-Je Park , Jae-Ho Song , Young-Hoon Park
IPC分类号： H01L27/146
CPC分类号： H01L27/14683 , H01L27/14603 , H01L27/14643
摘要： Provided are methods of fabricating an image sensor. Embodiments of such methods can include forming a first gate insulation layer in a first region of a semiconductor substrate and a first gate electrode layer, to cover the first gate insulation layer and forming a second gate insulation layer within a nitrogen enhanced atmosphere and a second gate electrode layer in a second region of the semiconductor substrate. The methods also include patterning the first gate electrode layer and the first gate insulation layer of the first region to form a first gate pattern and patterning the second gate electrode layer and the second gate insulation layer of the second region to form a second gate pattern.
摘要翻译：提供制造图像传感器的方法。这种方法的实施例可以包括在半导体衬底的第一区域和第一栅极电极层中形成第一栅极绝缘层，以覆盖第一栅极绝缘层并在氮气增强气氛中形成第二栅极绝缘层和第二栅极在半导体衬底的第二区域中的电极层。所述方法还包括图案化第一区域的第一栅极电极层和第一栅极绝缘层以形成第一栅极图案，并且使第二栅极电极层和第二栅极绝缘层图案化以形成第二栅极图案。

6. 发明申请

US20070007611A1 Image sensor and related fabrication method 失效
标题翻译：图像传感器及相关制造方法
公开(公告)号：US20070007611A1
公开(公告)日：2007-01-11
申请号：US11385714
申请日：2006-03-22
申请人： Young-Hoon Park , Jae-Ho Song , Won-Je Park
发明人： Young-Hoon Park , Jae-Ho Song , Won-Je Park
IPC分类号： H01L27/14
CPC分类号： H01L27/14609 , H01L27/14643 , H01L27/14689
摘要： An image sensor comprising a transfer gate electrode having a uniform impurity doping distribution is provided. The image sensor further comprises a semiconductor substrate comprising a pixel area, wherein the pixel area comprises an active region and the transfer gate electrode is disposed on the active region. A method of fabricating the image sensor is also provided. The method comprises preparing a semiconductor substrate, forming a polysilicon layer on the semiconductor substrate, doping the polysilicon layer with impurity ions, and patterning the polysilicon layer.
摘要翻译：提供了包括具有均匀杂质掺杂分布的传输栅电极的图像传感器。图像传感器还包括包括像素区域的半导体衬底，其中像素区域包括有源区域，并且传输栅极电极设置在有源区域上。还提供了一种制造图像传感器的方法。该方法包括制备半导体衬底，在半导体衬底上形成多晶硅层，用杂质离子掺杂多晶硅层，并构图多晶硅层。

7. 发明申请

US20070054434A1 METHODS OF FABRICATING AN IMAGE SENSOR 失效
标题翻译：制作图像传感器的方法
公开(公告)号：US20070054434A1
公开(公告)日：2007-03-08
申请号：US11464244
申请日：2006-08-14
申请人： Won-Je Park , Jae-Ho Song , Young-Hoon Park
发明人： Won-Je Park , Jae-Ho Song , Young-Hoon Park
IPC分类号： H01L21/00
CPC分类号： H01L27/14683 , H01L27/14603 , H01L27/14643
摘要： Provided are methods of fabricating an image sensor. Embodiments of such methods can include forming a first gate insulation layer in a first region of a semiconductor substrate and a first gate electrode layer, to cover the first gate insulation layer and forming a second gate insulation layer within a nitrogen enhanced atmosphere and a second gate electrode layer in a second region of the semiconductor substrate. The methods also include patterning the first gate electrode layer and the first gate insulation layer of the first region to form a first gate pattern and patterning the second gate electrode layer and the second gate insulation layer of the second region to form a second gate pattern.
摘要翻译：提供制造图像传感器的方法。这种方法的实施例可以包括在半导体衬底的第一区域和第一栅极电极层中形成第一栅极绝缘层，以覆盖第一栅极绝缘层并在氮气增强气氛中形成第二栅极绝缘层和第二栅极在半导体衬底的第二区域中的电极层。所述方法还包括图案化第一区域的第一栅极电极层和第一栅极绝缘层以形成第一栅极图案，并且使第二栅极电极层和第二栅极绝缘层图案化以形成第二栅极图案。

8. 发明授权

US07598136B2 Image sensor and related fabrication method 失效
标题翻译：图像传感器及相关制造方法
公开(公告)号：US07598136B2
公开(公告)日：2009-10-06
申请号：US11385714
申请日：2006-03-22
申请人： Young-Hoon Park , Jae-Ho Song , Won-Je Park
发明人： Young-Hoon Park , Jae-Ho Song , Won-Je Park
IPC分类号： H01L21/8238
CPC分类号： H01L27/14609 , H01L27/14643 , H01L27/14689
摘要： An image sensor comprising a transfer gate electrode having a uniform impurity doping distribution is provided. The image sensor further comprises a semiconductor substrate comprising a pixel area, wherein the pixel area comprises an active region and the transfer gate electrode is disposed on the active region. A method of fabricating the image sensor is also provided. The method comprises preparing a semiconductor substrate, forming a polysilicon layer on the semiconductor substrate, doping the polysilicon layer with impurity ions, and patterning the polysilicon layer.
摘要翻译：提供了包括具有均匀杂质掺杂分布的传输栅电极的图像传感器。图像传感器还包括包括像素区域的半导体衬底，其中像素区域包括有源区域，并且传输栅极电极设置在有源区域上。还提供了一种制造图像传感器的方法。该方法包括制备半导体衬底，在半导体衬底上形成多晶硅层，用杂质离子掺杂多晶硅层，并构图多晶硅层。

9. 发明申请

US20080081396A1 Method of fabricating image sensor having inner lens 有权
标题翻译：制造具有内透镜的图像传感器的方法
公开(公告)号：US20080081396A1
公开(公告)日：2008-04-03
申请号：US11882155
申请日：2007-07-31
申请人： Jong-Wook Hong , Tae-Seok Oh , Duk-Min Yi , Young-Mook Oh , Won-Je Park
发明人： Jong-Wook Hong , Tae-Seok Oh , Duk-Min Yi , Young-Mook Oh , Won-Je Park
IPC分类号： H01L21/00
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14625 , H01L27/14636 , H01L27/14645 , H01L27/14687
摘要： A method of fabricating an image sensor according to example embodiments may include forming a photodiode in a photoelectric conversion region of a substrate and forming an etch stop layer on the substrate. The etch stop layer may be patterned to form an inner lens on the photoelectric conversion region and an etch stop layer pattern on a transistor region of the substrate. A metal interconnection structure may be formed on the inner lens and the etch stop layer pattern. Accordingly, the number of additional processes for fabricating an image sensor may be reduced.
摘要翻译：根据示例性实施例的制造图像传感器的方法可以包括在衬底的光电转换区域中形成光电二极管，并在衬底上形成蚀刻停止层。蚀刻停止层可以被图案化以在光电转换区域上形成内透镜，并且在衬底的晶体管区域上形成蚀刻停止层图案。可以在内透镜和蚀刻停止层图案上形成金属互连结构。因此，可以减少用于制造图像传感器的附加处理的数量。

10. 发明授权

US07875488B2 Method of fabricating image sensor having inner lens 有权
标题翻译：制造具有内透镜的图像传感器的方法
公开(公告)号：US07875488B2
公开(公告)日：2011-01-25
申请号：US11882155
申请日：2007-07-31
申请人： Jong-Wook Hong , Tae-Seok Oh , Duk-Min Yi , Young-Mook Oh , Won-Je Park
发明人： Jong-Wook Hong , Tae-Seok Oh , Duk-Min Yi , Young-Mook Oh , Won-Je Park
IPC分类号： H01L21/00 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14625 , H01L27/14636 , H01L27/14645 , H01L27/14687
摘要： A method of fabricating an image sensor according to example embodiments may include forming a photodiode in a photoelectric conversion region of a substrate and forming an etch stop layer on the substrate. The etch stop layer may be patterned to form an inner lens on the photoelectric conversion region and an etch stop layer pattern on a transistor region of the substrate. A metal interconnection structure may be formed on the inner lens and the etch stop layer pattern. Accordingly, the number of additional processes for fabricating an image sensor may be reduced.
摘要翻译：根据示例性实施例的制造图像传感器的方法可以包括在衬底的光电转换区域中形成光电二极管，并在衬底上形成蚀刻停止层。蚀刻停止层可以被图案化以在光电转换区域上形成内透镜，并且在衬底的晶体管区域上形成蚀刻停止层图案。可以在内透镜和蚀刻停止层图案上形成金属互连结构。因此，可以减少用于制造图像传感器的附加处理的数量。

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