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1. 发明公开

CN107301965A 雷射辅助接合系统及制造半导体装置的方法有权
公开(公告)号：CN107301965A
公开(公告)日：2017-10-27
申请号：CN201710193406.X
申请日：2017-03-28
申请人：艾马克科技公司
发明人：尹泰浩 , 钟梁奎 , 金敏浩 , 宋延锡 , 柳东洙 , 金钟荷
IPC分类号： H01L21/67
CPC分类号： H01L21/4853 , G02B27/0927 , H01L23/3128 , H01L24/75 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2021/60112 , H01L2224/16145 , H01L2224/16227 , H01L2224/73204 , H01L2224/75263 , H01L2224/81002 , H01L2224/81007 , H01L2224/81191 , H01L2224/81224 , H01L2224/81815 , H01L2224/92125 , H01L2225/06513 , H01L2924/15311 , H01L2924/18161 , H01L2924/3511 , H01L21/67092 , H01L21/67115
摘要：雷射辅助接合系统及制造半导体装置的方法。一种制造一半导体装置的方法，该方法包括：将一半导体晶粒设置在一基板上；将雷射辐射透射穿过至少一射束过滤器，其中从至少该射束过滤器输出的雷射辐射同时：利用在一第一强度位准的一第一平顶的雷射射束来照射该半导体晶粒的一第一区域；以及利用在一不同于该第一强度位准的第二强度位准的一第二平顶的雷射射束来照射该半导体晶粒的一第二区域作为非限制性的例子，此揭露内容的各种特点提供例如在空间上及/或时间上强化或控制一半导体晶粒的雷射照射的系统及方法，以改善该半导体晶粒至一基板的接合。

2. 发明授权

US09916989B2 System and method for laser assisted bonding of semiconductor die 有权
公开(公告)号：US09916989B2
公开(公告)日：2018-03-13
申请号：US15130637
申请日：2016-04-15
申请人： Amkor Technology, Inc.
发明人： Tae Ho Yoon , Yang Gyoo Jung , Min Ho Kim , Youn Seok Song , Dong Soo Ryu , Choong Hoe Kim
IPC分类号： H01L21/44 , H01L21/48 , H01L21/60
CPC分类号： H01L21/4853 , H01L23/3128 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2021/60112 , H01L2224/16145 , H01L2224/16227 , H01L2224/73204 , H01L2224/81005 , H01L2224/81815 , H01L2224/92125 , H01L2225/06513 , H01L2924/15311 , H01L2924/18161 , H01L2924/3511
摘要： A system and method for laser assisted bonding of semiconductor die. As non-limiting examples, various aspects of this disclosure provide systems and methods that enhance or control laser irradiation of a semiconductor die, for example spatially and/or temporally, to improve bonding of the semiconductor die to a substrate.

3. 发明申请

US20140001163A1 BONDING DEVICE 有权
标题翻译：绑定设备
公开(公告)号：US20140001163A1
公开(公告)日：2014-01-02
申请号：US13911644
申请日：2013-06-06
申请人： Eiji TANAKA , Hiroyuki YASUYOSHI
发明人： Eiji TANAKA , Hiroyuki YASUYOSHI
IPC分类号： B23K26/22
CPC分类号： B23K26/22 , B23K1/00 , B23K1/0016 , B23K1/0056 , B23K3/04 , B23K26/00 , B23K26/20 , B23K2101/42 , H01L21/56 , H01L24/75 , H01L24/80 , H01L24/81 , H01L2021/6003 , H01L2021/60112 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/75262 , H01L2224/75702 , H01L2224/75745 , H01L2224/81024 , H01L2224/81224 , H01L2924/12042 , H01L2924/00012 , H01L2924/014 , H01L2924/00
摘要： A chip attraction passage 23 is provided extending through a housing 5A, a tool base 13, and a bonding tool 14. When the chip attraction passage 23 is attracted by the vacuum source 32, a semiconductor chip 3 can be attracted to and held on the lower surface of the bonding tool 14. The tool base 13 is configured by laminating transmitting members 11 and 12. A connection passage 29, which is a main part of the chip attraction passage 23, is configured by a groove 12B formed on the upper surface of the transmitting member 12 and a through-hole 12A in the center of the transmitting member 12. When the semiconductor chip 3 is heated by laser beams L and bonded to a substrate 2, even if flux or the like adhering to bumps 35 transpires and adheres in the connection passage 29.
摘要翻译：设置有穿过壳体5A，工具基座13和接合工具14的芯片吸引通道23.当吸引通道23被真空源32吸引时，半导体芯片3可被吸引并保持在工具座13由层叠传动部件11和12构成。作为芯片吸引通路23的主要部分的连接通路29由形成在上表面上的槽12B构成传递部件12的中心部分和通孔12A。当半导体芯片3被激光束L加热并结合到基板2上时，即使附着在凸块35上的焊剂等发生，粘附在连接通道29中。

4. 发明申请

US20170301560A1 SYSTEM AND METHOD FOR LASER ASSISTED BONDING OF SEMICONDUCTOR DIE 有权
公开(公告)号：US20170301560A1
公开(公告)日：2017-10-19
申请号：US15130637
申请日：2016-04-15
申请人： Amkor Technology, Inc.
发明人： Tae Ho Yoon , Yang Gyoo Jung , Min Ho Kim , Youn Seok Song , Dong Soo Ryu , Choong Hoe Kim
IPC分类号： H01L21/48 , H01L21/60
CPC分类号： H01L21/4853 , H01L23/3128 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2021/60112 , H01L2224/16145 , H01L2224/16227 , H01L2224/73204 , H01L2224/81005 , H01L2224/81815 , H01L2224/92125 , H01L2225/06513 , H01L2924/15311 , H01L2924/18161 , H01L2924/3511
摘要： A system and method for laser assisted bonding of semiconductor die. As non-limiting examples, various aspects of this disclosure provide systems and methods that enhance or control laser irradiation of a semiconductor die, for example spatially and/or temporally, to improve bonding of the semiconductor die to a substrate.

5. 发明申请

US20180204740A1 SYSTEM AND METHOD FOR LASER ASSISTED BONDING OF SEMICONDUCTOR DIE 审中-公开
公开(公告)号：US20180204740A1
公开(公告)日：2018-07-19
申请号：US15919569
申请日：2018-03-13
申请人： Amkor Technology, Inc.
发明人： Tae Ho Yoon , Yang Gyoo Jung , Min Ho Kim , Youn Seok Song , Dong Soo Ryu , Choong Hoe Kim
IPC分类号： H01L21/48 , H01L21/60
CPC分类号： H01L21/4853 , G02B27/0927 , H01L23/3128 , H01L24/75 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2021/60112 , H01L2224/16145 , H01L2224/16227 , H01L2224/73204 , H01L2224/75263 , H01L2224/81002 , H01L2224/81007 , H01L2224/81191 , H01L2224/81224 , H01L2224/81815 , H01L2224/92125 , H01L2225/06513 , H01L2924/15311 , H01L2924/18161 , H01L2924/3511
摘要： A system and method for laser assisted bonding of semiconductor die. As non-limiting examples, various aspects of this disclosure provide systems and methods that enhance or control laser irradiation of a semiconductor die, for example spatially and/or temporally, to improve bonding of the semiconductor die to a substrate.

6. 发明授权

US09162320B2 Bonding device 有权
标题翻译：粘接装置
公开(公告)号：US09162320B2
公开(公告)日：2015-10-20
申请号：US13911644
申请日：2013-06-06
申请人： Eiji Tanaka , Hiroyuki Yasuyoshi
发明人： Eiji Tanaka , Hiroyuki Yasuyoshi
IPC分类号： B23K1/00 , B23K26/00 , B23K26/20 , B23K26/22 , H01L23/00 , H01L21/58 , H01L21/60
CPC分类号： B23K26/22 , B23K1/00 , B23K1/0016 , B23K1/0056 , B23K3/04 , B23K26/00 , B23K26/20 , B23K2101/42 , H01L21/56 , H01L24/75 , H01L24/80 , H01L24/81 , H01L2021/6003 , H01L2021/60112 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/75262 , H01L2224/75702 , H01L2224/75745 , H01L2224/81024 , H01L2224/81224 , H01L2924/12042 , H01L2924/00012 , H01L2924/014 , H01L2924/00
摘要： A chip attraction passage 23 is provided extending through a housing 5A, a tool base 13, and a bonding tool 14. When the chip attraction passage 23 is attracted by the vacuum source 32, a semiconductor chip 3 can be attracted to and held on the lower surface of the bonding tool 14. The tool base 13 is configured by laminating transmitting members 11 and 12. A connection passage 29, which is a main part of the chip attraction passage 23, is configured by a groove 12B formed on the upper surface of the transmitting member 12 and a through-hole 12A in the center of the transmitting member 12. When the semiconductor chip 3 is heated by laser beams L and bonded to a substrate 2, even if flux or the like adhering to bumps 35 transpires and adheres in the connection passage 29.
摘要翻译：设置有穿过壳体5A，工具基座13和接合工具14的芯片吸引通道23.当吸引通道23被真空源32吸引时，半导体芯片3可被吸引并保持在工具座13由层叠传动部件11和12构成。作为芯片吸引通路23的主要部分的连接通路29由形成在上表面上的槽12B构成传递部件12的中心部分和通孔12A。当半导体芯片3被激光束L加热并结合到基板2上时，即使附着在凸块35上的焊剂等发生，粘附在连接通道29中。

7. 发明专利

JP2014011312A Bonding device 有权
标题翻译：绑定设备
公开(公告)号：JP2014011312A
公开(公告)日：2014-01-20
申请号：JP2012147083
申请日：2012-06-29
申请人： Shibuya Kogyo Co Ltd , 澁谷工業株式会社
发明人： TANAKA EIJI , YASUYOSHI HIROYUKI
IPC分类号： H01L21/60 , B23K26/00 , B23K26/064
CPC分类号： B23K26/22 , B23K1/00 , B23K1/0016 , B23K1/0056 , B23K3/04 , B23K26/00 , B23K26/20 , B23K2201/42 , H01L21/56 , H01L24/75 , H01L24/80 , H01L24/81 , H01L2021/6003 , H01L2021/60112 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/75262 , H01L2224/75702 , H01L2224/75745 , H01L2224/81024 , H01L2224/81224 , H01L2924/12042 , H01L2924/00012 , H01L2924/014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To solve a problem caused by use of flux or the like when a work for bonding a semiconductor chip is performed by a conventional bonding device, that is, a problem of reduction of the heating efficiency, etc. when a bonding tool is heated with a laser beam.SOLUTION: A chip suction passage 23 is provided over a housing 5A, a tool base 13 and a bonding tool 14. When negative pressure is supplied to the chip suction passage 23, a semiconductor chip 3 can be adsorbed and held on the lower surface of the bonding tool 14. The tool base 13 is constructed by stacking transmission members 11, 12, and a connection passage 29 serving as a main part of the chip suction passage 23 is constructed by a groove 12B formed on the upper surface of the transmission member 12 and a through-hole 12A at a center portion. Accordingly, even when flux or the like adhering to a bump 35 evaporates, scatters and adheres to the inside of a connection passage 29 during heating of the semiconductor chip 3 with a laser beam L to bond the semiconductor chip 3 to a substrate 2, reduction of the transmissivity of the laser beam L due to the flux or the like can be prevented because the installation place of a groove 12B is small.
摘要翻译：要解决的问题：为了解决当通过传统的接合装置进行用于接合半导体芯片的工作时使用焊剂等引起的问题，即当接合时降低加热效率等的问题工具用激光束加热。解决方案：在壳体5A，工具基座13和接合工具14上设置芯片吸入通道23.当向芯片吸入通道23供应负压时，半导体芯片3可以吸附并保持在接合工具14的下表面上。工具基座13通过堆叠传输构件11,12构成，并且用作芯片吸入通道23的主要部分的连接通道29由形成的槽12B构成在传动构件12的上表面和中心部分的通孔12A。因此，即使当粘附到凸块35的焊剂等蒸发时，在用半导体芯片3加热半导体芯片3以将半导体芯片3接合到基板2的同时，在连接通道29的内部散射并附着到还原由于沟槽12B的安装位置小，可以防止由于通量等导致的激光束L的透射率。

8. 发明专利

JP2018536274A 3次元構造物のためのレーザーボンディング装置および方法审中-公开
公开(公告)号：JP2018536274A
公开(公告)日：2018-12-06
申请号：JP2017562751
申请日：2017-06-22
申请人：クルーシャルマシンズカンパニーリミテッド
发明人：チェ,ジェジュン , キム,ビョンロク
IPC分类号： H01L21/52 , H01L21/60
CPC分类号： H01L21/268 , H01L21/52 , H01L21/67721 , H01L21/6773 , H01L24/04 , H01L24/741 , H01L24/75 , H01L24/81 , H01L24/82 , H01L2021/60112 , H01L2021/60292
摘要：【課題】本発明は、レーザーボンディング技術に関する。【解決手段】本発明は、PCB基板、ガラス基板のように、全体が平面の形を有する基板以外のものも、顧客のニーズに応じて屈曲した部分が規則的な形または不規則な形を有する3次元構造物(例えば、自動車テールライトやヘッドライト用器具)にも自動に電子部品素子をボンディングすることができ、また、電子部品素子と3次元構造物の配置不良とそれによるボンディング不良を防止することができる3次元構造物のレーザーボンディング装置及び方法を提供する。【選択図】図1

9. 发明专利

JP6019817B2 ボンディング装置有权
公开(公告)号：JP6019817B2
公开(公告)日：2016-11-02
申请号：JP2012147083
申请日：2012-06-29
申请人：澁谷工業株式会社
发明人：田中栄次 , 安吉裕之
IPC分类号： B23K26/00 , B23K26/064 , H01L21/60
CPC分类号： B23K26/22 , B23K1/00 , B23K1/0016 , B23K1/0056 , B23K26/00 , B23K3/04 , H01L24/75 , B23K2201/42 , B23K26/20 , H01L2021/6003 , H01L2021/60112 , H01L21/56 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/75262 , H01L2224/75702 , H01L2224/75745 , H01L2224/81024 , H01L2224/81224 , H01L24/80 , H01L24/81 , H01L2924/12042

10. 发明公开

KR1020170140477A 레이저 리플로우 방법 및 이의 방법으로 제조되는 기판구조체 审中-实审
标题翻译：一种激光回流方法和由该方法制造的基板结构
公开(公告)号：KR1020170140477A
公开(公告)日：2017-12-21
申请号：KR1020160072642
申请日：2016-06-10
申请人： 크루셜머신즈 주식회사
发明人： 최지훈 , 조성윤 , 조완기
IPC分类号： H01L23/00 , H01L21/268 , H01L21/60 , H01L25/065
CPC分类号： H01L2224/16145 , H01L24/11 , H01L21/268 , H01L21/52 , H01L24/03 , H01L24/97 , H01L25/0657 , H01L2021/60112 , H01L2021/60292
摘要： 본발명은레이저리플로우방법및 이의방법으로제조되는기판구조체에관한것으로, 보다상세하게는레이저를이용한리플로우공정을통해기판구조체를제조하기위한레이저리플로우방법및 이의방법으로제조되는기판구조체에관한것이다. 본발명은레이저리플로우방법에관한것으로, a) 복수의도전부가형성된인터포저및 상기인터포저의상측에부착되는반도체칩을포함하는레이어를준비하는단계; b) 기판의상측에상기레이어를하나이상적층하는단계; 및 c) 상기레이어에레이저빔을면 조사하여상기레이어를고정시키는단계를포함한다.
摘要翻译：本发明涉及一种激光回流方法以及通过该方法制造的基板结构，更具体地涉及通过使用激光的回流工艺来制造基板结构的激光回流方法以及通过该方法制造的基板结构它涉及。本发明涉及一种激光回流方法，其包括以下步骤：a）准备包括具有多个导电部分的中介层和附接到中介层的上侧的半导体芯片的层; b）在衬底上方堆叠一个或多个层; 和c）用激光束照射该层以固定该层。

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