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1. 发明公开

CN104412724A 电子部件安装构造体、IC卡、COF封装无效
公开(公告)号：CN104412724A
公开(公告)日：2015-03-11
申请号：CN201380033809.8
申请日：2013-02-21
申请人：松下知识产权经营株式会社
发明人：和田义之 , 境忠彦 , 本村耕治
IPC分类号： H05K3/32 , H01L21/60 , H01L23/12 , H05K3/10 , H05K3/12
CPC分类号： H05K1/097 , G02F1/1303 , G06K19/07718 , G06K19/07745 , H01L21/4853 , H01L23/145 , H01L23/4985 , H01L23/49855 , H01L23/49866 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/742 , H01L24/75 , H01L24/81 , H01L24/94 , H01L24/95 , H01L24/97 , H01L25/0652 , H01L2223/6677 , H01L2224/11312 , H01L2224/1132 , H01L2224/13008 , H01L2224/13016 , H01L2224/13019 , H01L2224/13025 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/1329 , H01L2224/13301 , H01L2224/13311 , H01L2224/13318 , H01L2224/13324 , H01L2224/13339 , H01L2224/13344 , H01L2224/13347 , H01L2224/13355 , H01L2224/13357 , H01L2224/1336 , H01L2224/13364 , H01L2224/13369 , H01L2224/1339 , H01L2224/1349 , H01L2224/13644 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/17106 , H01L2224/73204 , H01L2224/7526 , H01L2224/75262 , H01L2224/7565 , H01L2224/75651 , H01L2224/75702 , H01L2224/7598 , H01L2224/81127 , H01L2224/81191 , H01L2224/81193 , H01L2224/81203 , H01L2224/8159 , H01L2224/81601 , H01L2224/81611 , H01L2224/81618 , H01L2224/81624 , H01L2224/81639 , H01L2224/81644 , H01L2224/81647 , H01L2224/81655 , H01L2224/81657 , H01L2224/8166 , H01L2224/81664 , H01L2224/81669 , H01L2224/81815 , H01L2224/8184 , H01L2224/81871 , H01L2224/9202 , H01L2224/94 , H01L2224/95 , H01L2224/97 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2924/12042 , H01L2924/19105 , H05K1/0274 , H05K1/0313 , H05K1/181 , H05K3/12 , H05K3/321 , H05K2201/0108 , H05K2201/10674 , H01L2924/00015 , H01L2924/00014 , H01L2924/00012 , H01L2924/01048 , H01L2224/81 , H01L2224/11 , H01L2924/00
摘要：电子部件安装构造体包含基板；形成于基板表面上的、以Cu等高熔点金属为主体的导电性配线图案；将导电性配线图案的端子接合位置内包、搭载于所述基板表面的搭载位置上、具有外部端子的电子部件。外部端子在端子接合位置处以埋入到导电性配线图案的内部的状态与导电性配线图案相连接。因此，与仅在导电性配线图案的表面上将电子部件的外部端子与导电性配线图案连接的接合部相比，可以在强度更高的接合部处将外部端子与导电性配线图案连接。

2. 发明申请

US20170365586A1 Semiconductor Device on String Circuit and Method of Making the Same 审中-公开
公开(公告)号：US20170365586A1
公开(公告)日：2017-12-21
申请号：US15691657
申请日：2017-08-30
申请人： Rohinni, LLC
发明人： Andrew Huska , Cody Peterson , Clinton Adams , Sean Kupcow
IPC分类号： H01L25/075 , H01L21/677 , H01L21/68 , H01L21/683 , H01L21/687 , H01L21/66 , H01L23/544 , H01L23/00 , H01L33/62 , H01L21/67 , H01L21/48
CPC分类号： H01L25/0753 , G02F1/133603 , G02F1/133605 , G02F1/133606 , G02F2001/133612 , H01L21/4853 , H01L21/67132 , H01L21/67144 , H01L21/67196 , H01L21/67265 , H01L21/67715 , H01L21/67778 , H01L21/681 , H01L21/6836 , H01L21/68742 , H01L22/12 , H01L22/20 , H01L23/53242 , H01L23/544 , H01L24/75 , H01L24/81 , H01L24/83 , H01L24/89 , H01L33/62 , H01L2221/68322 , H01L2221/68327 , H01L2221/68354 , H01L2221/68363 , H01L2221/68381 , H01L2223/54413 , H01L2223/54426 , H01L2223/54433 , H01L2223/54486 , H01L2224/16238 , H01L2224/75252 , H01L2224/75261 , H01L2224/75262 , H01L2224/75303 , H01L2224/7531 , H01L2224/75314 , H01L2224/75651 , H01L2224/75753 , H01L2224/75824 , H01L2224/75842 , H01L2224/75843 , H01L2224/81191 , H01L2224/81205 , H01L2224/81224 , H01L2224/83224 , H01L2924/12041 , H01L2924/405 , H01L2933/0066 , H01L2924/00014
摘要： An elongated light circuit includes an elongated circuit trace and a plurality of micro-sized, unpackaged LEDs disposed sequentially on the circuit trace. A height of the LEDs ranges from about 12.5 microns to about 200 microns. The elongated circuit trace and the LEDs are coated with a protective coating.

3. 发明申请

US20170256523A1 METHOD AND APPARATUS FOR TRANSFER OF SEMICONDUCTOR DEVICES 审中-公开
公开(公告)号：US20170256523A1
公开(公告)日：2017-09-07
申请号：US15600611
申请日：2017-05-19
申请人： Rohinni, LLC
发明人： ANDREW HUSKA , CODY PETERSON , CLINTON ADAMS , SEAN KUPCOW
IPC分类号： H01L25/075 , H01L23/00 , H01L21/67 , H01L21/683 , H01L23/544 , H01L21/677 , H01L21/68 , H01L21/687 , H01L21/66 , H01L33/62 , H01L21/48
CPC分类号： H01L25/0753 , G02F1/133603 , G02F1/133605 , G02F1/133606 , G02F2001/133612 , H01L21/4853 , H01L21/67132 , H01L21/67144 , H01L21/67196 , H01L21/67265 , H01L21/67715 , H01L21/67778 , H01L21/681 , H01L21/6836 , H01L21/68742 , H01L22/12 , H01L22/20 , H01L23/53242 , H01L23/544 , H01L24/75 , H01L24/81 , H01L24/83 , H01L24/89 , H01L33/62 , H01L2221/68322 , H01L2221/68327 , H01L2221/68354 , H01L2221/68363 , H01L2221/68381 , H01L2223/54413 , H01L2223/54426 , H01L2223/54433 , H01L2223/54486 , H01L2224/16238 , H01L2224/75252 , H01L2224/75261 , H01L2224/75262 , H01L2224/75303 , H01L2224/7531 , H01L2224/75314 , H01L2224/75317 , H01L2224/75651 , H01L2224/75753 , H01L2224/75824 , H01L2224/75842 , H01L2224/75843 , H01L2224/81191 , H01L2224/81205 , H01L2224/81224 , H01L2224/83224 , H01L2924/12041 , H01L2924/405 , H01L2933/0066 , H01L2924/00014
摘要： A system to transfer an unpackaged die directly from a die holding substrate to a transfer location on a secondary substrate. The system includes a die separation device disposed adjacent to the die holding substrate to initiate separation of the unpackaged die from the die holding substrate. An energy source is disposed adjacent to the secondary substrate to apply energy to the transfer location and affix the unpackaged die directly to the secondary substrate. A sensor detects a position and orientation of the secondary substrate with respect to the unpackaged die on the die holding substrate. A processor is in communication with the die separation device, the energy source, and the sensor. The processor is configured to cause actuation of the die separation device and the energy source according, at least in part, to transfer instructions and data received from the sensor.

4. 发明授权

EP1283085B1 Verfahren und Vorrichtung zur thermischen Verbindung von Anschlussflächen zweier Substrate 有权
标题翻译：对两个衬底的连接表面的热连接的方法和装置
公开(公告)号：EP1283085B1
公开(公告)日：2005-06-01
申请号：EP02023748.3
申请日：1998-11-20
申请人： Pac Tech - Packaging Technologies GmbH
发明人： Momeni, Kaveh, Dr.-Ing.
IPC分类号： B23K1/005
CPC分类号： H01L24/75 , B23K1/0056 , B23K2201/36 , H01L24/81 , H01L2224/75 , H01L2224/75253 , H01L2224/75262 , H01L2224/75315 , H01L2224/75986 , H01L2224/81224 , H01L2224/81801 , H01L2924/01013 , H01L2924/01019 , H01L2924/01033 , H01L2924/01057 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/3511 , H05K3/3494 , H05K2201/0108 , H05K2203/0278 , H05K2203/107 , H01L2924/00

5. 发明申请

WO2015151137A1 半導体装置の製造装置及び半導体装置の製造方法审中-公开
标题翻译：用于生产半导体器件的器件和用于生产半导体器件的方法
公开(公告)号：WO2015151137A1
公开(公告)日：2015-10-08
申请号：PCT/JP2014/001970
申请日：2014-04-04
申请人：ダイトロンテクノロジー株式会社
发明人：北田　啓順
IPC分类号： H01L21/52
CPC分类号： H01L24/75 , G11B5/105 , G11B5/314 , G11B5/6088 , G11B2005/0021 , H01L24/83 , H01L2224/75262 , H01L2224/83192 , H01L2224/83224 , H01L2224/83815 , H01L2924/00014
摘要：【課題】光源ユニットを構成する材料に関係なくハンダを溶融するレーザ光の波長を設定することができるとともに、光源ユニット及びスライダの熱による性能劣化を抑えることができる半導体装置の製造装置及び半導体装置の製造方法を提供する。【解決手段】チップ１２を支持するステージ４２は、加熱レーザ６８から照射されるレーザ光を透過する透明材料で形成されており、チップ１２と基板１８の接合面１４ｃに垂直なチップ１２の垂直面１４ｂに面接触する垂直支持面４３ｂと、基板１８に対向する対向面４２ａと、垂直支持面４３ｂにおける対向面４２ａから離れた位置を覆い加熱レーザ６８から照射されたレーザ光を遮光あるいは減光する遮光部６１と、対向面４２ａと遮光部６１との間に形成された透光部６２とを有している。加熱レーザ６８は、透光部６２を通してチップ１２にレーザ光を照射してチップ１２と基板１８との接合面１４ｃに設けたハンダ３０を溶融してチップ１２と基板１８を接合する。
摘要翻译：本发明提供一种用于制造半导体器件的方法和用于制造半导体器件的器件，其能够设置用于熔化焊料的激光的波长，而与构成光源单元的材料无关，并且可以抑制性能的劣化由来自滑块和光源单元的热量产生。 [解决方案]支撑芯片（12）的台（42）由透射材料形成，该透明材料透射从加热激光器（68）辐射的激光，并且具有：接触的垂直支撑表面（43b）其中所述芯片（12）的垂直于所述衬底（18）的接合表面（14c）和所述芯片（12）的垂直表面（14b）; 与衬底（18）相对的相对表面（42a）; 覆盖与相对表面（42a）分离的垂直支撑表面（43b）的位置并减少或屏蔽从加热激光器（68）辐射的激光的遮光部分（61）; 以及形成在相对表面（42a）和遮光部分（61）之间的半透明部分（62）。加热激光器（68）通过将设置在基板（18）和芯片（12）的接合表面（14c）上的焊料（30）辐射激光，从而将芯片（12）和基板（18）芯片（12）穿过半透明部分（62）。

6. 发明申请

WO2006136603B1 METHOD AND DEVICE FOR THE PERMANENT CONNECTION OF INTEGRATED CIRCUIT TO A SUBSTRATE 审中-公开
标题翻译：方法和装置永久连接而一体化，电路与基底
公开(公告)号：WO2006136603B1
公开(公告)日：2007-03-01
申请号：PCT/EP2006063469
申请日：2006-06-22
申请人： MUEHLBAUER AG , AUGST UWE
发明人： AUGST UWE
IPC分类号： H01L21/58 , H01L21/56 , H01L21/60
CPC分类号： H01L24/83 , H01L21/563 , H01L24/29 , H01L24/75 , H01L24/90 , H01L2223/6677 , H01L2224/16225 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/75 , H01L2224/75262 , H01L2224/75263 , H01L2224/81801 , H01L2224/83871 , H01L2924/00014 , H01L2924/01033 , H01L2924/01057 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/07802 , H01L2924/14 , H01L2924/00012 , H01L2224/0401
摘要： The invention relates to a method and a device for permanently connecting integrated circuits (1) to at least one substrate (2) located therebelow by means of an adhesive (3) which is disposed therebetween and on the edges relative to the integrated circuits (1). In order to cure the adhesive (3), light (19) having a wavelength ranging between 280 and 900 nm is radiated onto the top or/and bottom face of the assembly comprising the substrate (2) and one of the integrated circuits (1) so as to polymerize the adhesive (3).
摘要翻译：本发明涉及一种方法和装置用于永久地接合的集成电路（1）具有至少一个通过其间的装置和相对于布置在所述基板（2）所示的集成电路（1）沿周缘布置的粘合剂（3），（用于粘合剂的固化 3）光（19）配有一个波长范围内的基板（2）与所述集成电路（1）的上方和/或下侧照射到粘合剂中的一个的装置的280-900纳米波长的所选择的一个（3）聚合。

7. 发明申请

WO99026753A1 METHOD AND DEVICE FOR THERMALLY BONDING CONNECTING SURFACES OF TWO SUBSTRATES 审中-公开
标题翻译：方法和设备两块基板的连接面热连接
公开(公告)号：WO99026753A1
公开(公告)日：1999-06-03
申请号：PCT/DE1998/003439
申请日：1998-11-20
IPC分类号： B23K1/00 , B23K1/005 , H01L21/60 , H05K3/34 , H05K3/36
CPC分类号： H01L24/75 , B23K1/0056 , B23K2201/36 , H01L24/81 , H01L2224/75 , H01L2224/75253 , H01L2224/75262 , H01L2224/75315 , H01L2224/75986 , H01L2224/81224 , H01L2224/81801 , H01L2924/01013 , H01L2924/01019 , H01L2924/01033 , H01L2924/01057 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/3511 , H05K3/3494 , H05K2201/0108 , H05K2203/0278 , H05K2203/107 , H01L2924/00
摘要： The invention relates to a method for thermally bonding connecting surfaces (19, 20) of two substrates (17, 18), said surfaces being arranged in an overlapping position. At least one substrate (18) is constructed such that it is transparent, and the joining surfaces (19, 20) are treated with laser energy which enters from a back side (26) of the transparent substrate (18). Each of the contact pairings (37) configured between two connecting surfaces (19, 20) of the opposing substrates (17, 18) is separately treated with laser energy.
摘要翻译：一种用于热布置在重叠位置的连接表面（19，20）的两个基板（17，18）的从背面侧连接，其特征在于，至少一个基板（18）是透明的，并且终端面（19，20）的涂层（具有激光能量处理需要在透明基板（18）这里的地方26），其中，每个所述相对的基板（17，18）形成的触点对（37）的焊盘19，其中20位（两者之间）是在分别与激光能量作用。

8. 发明申请

US20180261581A1 METHOD AND APPARATUS FOR DIRECT TRANSFER OF SEMICONDUCTOR DEVICE DIE FROM A MAPPED WAFER 审中-公开
公开(公告)号：US20180261581A1
公开(公告)日：2018-09-13
申请号：US15978093
申请日：2018-05-12
申请人： Rohinni, LLC
发明人： Andrew Huska , Cody Peterson , Clinton Adams , Sean Kupcow
IPC分类号： H01L25/075 , H01L21/677 , H01L21/48 , H01L21/687 , H01L33/62 , H01L23/00 , H01L21/67 , H01L21/66 , H01L23/544 , H01L21/683 , H01L21/68
CPC分类号： H01L25/0753 , G02F1/133603 , G02F1/133605 , G02F1/133606 , G02F2001/133612 , H01L21/4853 , H01L21/67132 , H01L21/67144 , H01L21/67196 , H01L21/67265 , H01L21/67715 , H01L21/67778 , H01L21/681 , H01L21/6836 , H01L21/68742 , H01L22/12 , H01L22/20 , H01L23/53242 , H01L23/544 , H01L24/75 , H01L24/81 , H01L24/83 , H01L24/89 , H01L33/62 , H01L2221/68322 , H01L2221/68327 , H01L2221/68354 , H01L2221/68363 , H01L2221/68381 , H01L2223/54413 , H01L2223/54426 , H01L2223/54433 , H01L2223/54486 , H01L2224/16238 , H01L2224/75252 , H01L2224/75261 , H01L2224/75262 , H01L2224/75303 , H01L2224/7531 , H01L2224/75314 , H01L2224/75651 , H01L2224/75753 , H01L2224/75824 , H01L2224/75842 , H01L2224/75843 , H01L2224/81191 , H01L2224/81205 , H01L2224/81224 , H01L2224/83224 , H01L2924/12041 , H01L2924/405 , H01L2933/0066 , H01L2924/00014
摘要： A system for performing a direct transfer of a plurality of semiconductor die from a first substrate to a second substrate based on map data of the location of the semiconductor die. A first conveyance mechanism conveys the first substrate. A second conveyance mechanism conveys the second substrate. A transfer mechanism is disposed adjacent to the first conveyance mechanism to effectuate the direct transfer. A controller causes one or more processors to perform operations including: determining positions of the plurality of semiconductor die based at least in part on map data, conveying at least one of the first substrate or the second substrate such that the first substrate, the second substrate, and the transfer mechanism are in a direct transfer position, and activating the transfer mechanism to perform the direct transfer of the plurality of semiconductor die.

9. 发明申请

US20170256524A1 SEMICONDUCTOR DEVICE ON GLASS SUBSTRATE AND METHOD OF MAKING THE SAME 审中-公开
公开(公告)号：US20170256524A1
公开(公告)日：2017-09-07
申请号：US15600637
申请日：2017-05-19
申请人： Rohinni, LLC
发明人： Andrew Huska , Cody Peterson , Clinton Adams , Sean Kupcow
IPC分类号： H01L25/075 , H01L23/00 , H01L21/67 , H01L21/683 , H01L23/544 , H01L21/677 , H01L21/68 , H01L21/687 , H01L21/66 , H01L33/62 , H01L21/48
CPC分类号： H01L25/0753 , G02F1/133603 , G02F1/133605 , G02F1/133606 , G02F2001/133612 , H01L21/4853 , H01L21/67132 , H01L21/67144 , H01L21/67196 , H01L21/67265 , H01L21/67715 , H01L21/67778 , H01L21/681 , H01L21/6836 , H01L21/68742 , H01L22/12 , H01L22/20 , H01L23/53242 , H01L23/544 , H01L24/75 , H01L24/81 , H01L24/83 , H01L24/89 , H01L33/62 , H01L2221/68322 , H01L2221/68327 , H01L2221/68354 , H01L2221/68363 , H01L2221/68381 , H01L2223/54413 , H01L2223/54426 , H01L2223/54433 , H01L2223/54486 , H01L2224/16238 , H01L2224/75252 , H01L2224/75261 , H01L2224/75262 , H01L2224/75303 , H01L2224/7531 , H01L2224/75314 , H01L2224/75317 , H01L2224/75651 , H01L2224/75753 , H01L2224/75824 , H01L2224/75842 , H01L2224/75843 , H01L2224/81191 , H01L2224/81205 , H01L2224/81224 , H01L2224/83224 , H01L2924/12041 , H01L2924/405 , H01L2933/0066 , H01L2924/00014
摘要： A lighting component including a plurality of die transferred to the glass substrate. The transfer occurs by positioning the glass substrate to face a first surface of a die carrier carrying multiple die. A reciprocating transfer member thrusts against a second surface of the die carrier to actuate the transfer member thereby causing a localized deflection of the die carrier in a direction of the surface of the glass substrate to position an initial die proximate to the glass substrate. The initial die transfers directly to a circuit trace on the glass substrate. At least one of the die carrier or the transfer member is then shifted such that the transfer member aligns with a subsequent die on the first surface of the die carrier. The acts of actuating, transferring, and shifting are repeated to effectuate a transfer of the multiple die onto the glass substrate.

10. 发明申请

US20170140959A1 Apparatus and Method for Direct Transfer of Semiconductor Devices 审中-公开
公开(公告)号：US20170140959A1
公开(公告)日：2017-05-18
申请号：US15418573
申请日：2017-01-27
申请人： Rohinni, LLC
发明人： Andrew Huska , Cody Peterson , Clinton Adams , Sean Kupcow
IPC分类号： H01L21/67 , H01L21/66 , H01L21/48 , H01L21/68 , H01L21/683
CPC分类号： H01L25/0753 , G02F1/133603 , G02F1/133605 , G02F1/133606 , G02F2001/133612 , H01L21/4853 , H01L21/67132 , H01L21/67144 , H01L21/67196 , H01L21/67265 , H01L21/67715 , H01L21/67778 , H01L21/681 , H01L21/6836 , H01L21/68742 , H01L22/12 , H01L22/20 , H01L23/53242 , H01L23/544 , H01L24/75 , H01L24/81 , H01L24/83 , H01L24/89 , H01L33/62 , H01L2221/68322 , H01L2221/68327 , H01L2221/68354 , H01L2221/68363 , H01L2221/68381 , H01L2223/54413 , H01L2223/54426 , H01L2223/54433 , H01L2223/54486 , H01L2224/16238 , H01L2224/75252 , H01L2224/75261 , H01L2224/75262 , H01L2224/75303 , H01L2224/7531 , H01L2224/75314 , H01L2224/75317 , H01L2224/75651 , H01L2224/75753 , H01L2224/75824 , H01L2224/75842 , H01L2224/75843 , H01L2224/81191 , H01L2224/81205 , H01L2224/81224 , H01L2224/83224 , H01L2924/12041 , H01L2924/405 , H01L2933/0066 , H01L2924/00014
摘要： An apparatus that directly transfers a semiconductor device die from a first substrate to a second substrate. The semiconductor device die is disposed on the first side of the first substrate. The apparatus includes a first frame to hold the first substrate, and a second frame to hold the second substrate adjacent to the first side of the first substrate. A needle is disposed adjacent to the first frame and extends in a direction toward the second side of the first substrate. A needle actuator is connected to the needle to move the needle, during a direct transfer process, to a die transfer position at which the needle contacts the second side of the first substrate to press the semiconductor device die into contact with the second substrate such that the semiconductor device die is released from the first substrate and is attached to the second substrate.

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