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1. 发明公开

CN1530931A 在读/写磁头中的传感器条封装层失效
公开(公告)号：CN1530931A
公开(公告)日：2004-09-22
申请号：CN03159319.4
申请日：2003-09-05
申请人：西加特技术有限责任公司
发明人： D·P·伯班克 , K·R·海因
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , Y10S451/908 , Y10T29/49036 , Y10T29/49037 , Y10T29/49052
摘要：一种磁阻读出头具有读出头层，所述读出头层具有一定形状以形成在空气支承表面处具有开口侧的空气支承表面和传感器条腔。把传感器条放置在传感器条腔中。传感器条具有设置在空气支承表面后的前表面，以确定从前表面延伸到空气支承表面的封装腔。把封装层放置在封装腔中。封装层封装前表面。

2. 发明授权

CN1129215C 电连接器端子制造方法及其制造模具失效
公开(公告)号：CN1129215C
公开(公告)日：2003-11-26
申请号：CN00115321.8
申请日：2000-03-31
申请人：富士康(昆山)电脑接插件有限公司 , 鸿海精密工业股份有限公司
发明人：施沧谦 , 李国清
IPC分类号： H01R43/16
CPC分类号： B24B19/20 , B24B1/00 , H01R12/721 , H01R13/03 , H01R43/16 , Y10S451/908 , Y10S451/91
摘要：一种用金属片材冲制端子的冲压模具，该模具有刮削电性接合配合器件的导电部分的端子接触部的模具嵌入件，其中该配合器件用于与电连接器配合，从而在电连接器与配合器件间建立电性连接。用于刮削操作的模具嵌入件经过超声波加工最后处理，该超声波加工使用钻石砂磨料匀混于液体作为工作介质，其中钻石砂磨料包括8000#磨粒，该加工使模具嵌入件具有0.08Ra的表面粗糙度。

3. 发明公开

CN1307386A 电连接器端子制造方法及其制造模具失效
公开(公告)号：CN1307386A
公开(公告)日：2001-08-08
申请号：CN00115321.8
申请日：2000-03-31
申请人：富士康(昆山)电脑接插件有限公司 , 鸿海精密工业股份有限公司
发明人：施沧谦 , 李国清
IPC分类号： H01R43/16
CPC分类号： B24B19/20 , B24B1/00 , H01R12/721 , H01R13/03 , H01R43/16 , Y10S451/908 , Y10S451/91
摘要：一种用金属片材冲制端子的冲压模具,该模具有刮削电性接合配合器件的导电部分的端子接触部的模具嵌入件,其中该配合器件用于与电连接器配合,从而在电连接器与配合器件间建立电性连接。用于刮削操作的模具嵌入件经过超声波加工最后处理,该超声波加工使用钻石砂磨料匀混于液体作为工作介质,其中钻石砂磨料包括8000#磨粒,该加工使模具嵌入件具有0.08Ra的表面粗糙度。

4. 发明授权

CN1261924C 在读/写磁头中的传感器条封装层失效
公开(公告)号：CN1261924C
公开(公告)日：2006-06-28
申请号：CN03159319.4
申请日：2003-09-05
申请人：西加特技术有限责任公司
发明人： D·P·伯班克 , K·R·海因
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , Y10S451/908 , Y10T29/49036 , Y10T29/49037 , Y10T29/49052
摘要：一种磁阻读出头具有读出头层，所述读出头层具有一定形状以形成在空气支承表面处具有开口侧的空气支承表面和传感器条腔。把传感器条放置在传感器条腔中。传感器条具有设置在空气支承表面后的前表面，以确定从前表面延伸到空气支承表面的封装腔。把封装层放置在封装腔中。封装层封装前表面。

5. 发明授权

EP1920883B1 ELECTRON BEAM ASSISTED EEM METHOD 有权
标题翻译：电子助EEM程序
公开(公告)号：EP1920883B1
公开(公告)日：2013-05-22
申请号：EP06782248.6
申请日：2006-08-03
申请人： Mori, Yuzo , JTEC Corporation
发明人： Mori, Yuzo
IPC分类号： B24B1/00 , B24B19/22 , B24B31/06 , B24B37/00 , B24B31/116 , B24C1/08 , G02B5/08 , G21K1/06
CPC分类号： G21K1/06 , B23H5/04 , B23H7/38 , B23K15/00 , B24B31/10 , B24C1/08 , G21K2201/064 , G21K2201/067 , Y10S451/908

6. 发明申请

WO1999010569A1 COMBINATION ELECTROLYTIC POLISHING AND POLISHING AND TEXTURING MACHINE AND THE COMBINATION ELECTROLYTIC POLISHING AND POLISHING AND TEXTURING TAPE USED IN THE SAID MACHINE 审中-公开
标题翻译：组合电解抛光和抛光机和组合电解抛光和抛光和纹理胶带在机器中使用
公开(公告)号：WO1999010569A1
公开(公告)日：1999-03-04
申请号：PCT/SG1997000051
申请日：1997-10-03
申请人： UNIQUE TECHNOLOGY INTERNATIONAL PTE. LTD. , TANI, Kazunori , KAWACHI, Kohichi
发明人： UNIQUE TECHNOLOGY INTERNATIONAL PTE. LTD.
IPC分类号： C25F03/16
CPC分类号： B24D11/00 , B24B19/028 , C25F3/16 , G11B5/8404 , Y10S451/908
摘要： Objective: to provide a combination electrolytic polishing and polishing and grinding machine and processing tape which will enable the formation on the surface of hard disks uniform, accurate texturing without abnormal protrusions. Composition: a polishing and texturing machine and processing tape in which a layer which can hold polishing grains is formed with flocking or foam resin on one surface of tape-shaped backing, such as synthetic resin film or woven material or non-woven cloth, and electrolytic solution into which polishing grains have been dispersed is supplied to this tape to conduct polishing or texturing of the hard disk board, at the same time as which a voltage is applied between the electrode established close to the surface being processed and the disk board to enable electrolytic polishing. Effect: simultaneous mechanical processing and electrolytic polishing enables the efficient provision of hard disks in one-stage processing with surface properties equal, or superior to those produced in two-stage processing.
摘要翻译：目的：提供一种电解抛光和抛光研磨机和加工胶带的组合，使硬盘表面的形成均匀，纹理不变，无异常突起。组合物：抛光和变形机和处理带，其中可以保持抛光颗粒的层在植物或泡沫树脂上形成在诸如合成树脂膜或编织材料或无纺布的带状背衬的一个表面上，以及将该抛光颗粒分散在其中的电解溶液供给到该带，以在与被处理表面之间建立的电极与盘板之间施加电压的同时对硬盘板进行抛光或纹理化，使电解抛光。效果：同时机械加工和电解抛光使得能够在一阶段加工中有效地提供硬盘，其表面性能等同于或优于两级加工中生产的。

7. 发明申请

WO2004094107A1 CONDUCTIVE POLISHING PAD WITH ANODE AND CATHODE 审中-公开
标题翻译：导电抛光垫与阳极和阴极
公开(公告)号：WO2004094107A1
公开(公告)日：2004-11-04
申请号：PCT/US2004/009243
申请日：2004-03-24
申请人： ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC.
发明人： SO, Joseph, K.
IPC分类号： B24B37/04
CPC分类号： B24B37/24 , B23H5/08 , B24B37/046 , B24B37/20 , C25F7/00 , Y10S451/908
摘要： A conductive polishing pad (10) that includes one or more anodes (24) and one or more cathodes (26) formed at or near the polishing surface of a polishing pad. The anodes and cathodes are connected to a wiring network (52) that is part of an electrical connector system that allows for a current source to be connected to the polishing pad and provide a current to the anodes and cathodes even if the polishing pad is moving relative to the current source. An electrolytic polishing fluid (20) introduced between the polishing surface and the metal layer of a wafer forms an electrical circuit between the anode, cathode and the metal layer. The conductive polishing pad allows for electrochemical mechanical polishing (ECMP) to be performed on a conventional chemical mechanical polishing (CMP) tool.
摘要翻译：一种导电抛光垫（10），其包括在抛光垫的抛光表面处或附近形成的一个或多个阳极（24）和一个或多个阴极（26）。阳极和阴极连接到作为电连接器系统的一部分的布线网络（52），其允许电流源连接到抛光垫并且即使抛光垫移动也向阳极和阴极提供电流相对于当前来源。引入在抛光表面和晶片的金属层之间的电解抛光液（20）在阳极，阴极和金属层之间形成电路。导电抛光垫允许在常规化学机械抛光（CMP）工具上进行电化学机械抛光（ECMP）。

8. 发明申请

WO2007018117A1 電子ビームアシストＥＥＭ法审中-公开
标题翻译：电子束辅助EEM方法
公开(公告)号：WO2007018117A1
公开(公告)日：2007-02-15
申请号：PCT/JP2006/315388
申请日：2006-08-03
申请人：森勇蔵
发明人：森勇蔵
IPC分类号： B24B1/00 , B24B19/22 , B24B31/06 , B24B37/00
CPC分类号： G21K1/06 , B23H5/04 , B23H7/38 , B23K15/00 , B24B31/10 , B24C1/08 , G21K2201/064 , G21K2201/067 , Y10S451/908
摘要： [PROBLEMS] To provide an electron beam assisted EEM method that can realize ultraprecision machining of workpieces, including glass ceramic materials, in which at least two component materials different from each other in machining speed in a machining process are present in a refined mixed state and the surface state is not even, to a surface roughness of 0.2 to 0.05 nm RMS. [MEANS FOR SOLVING PROBLEMS] The EEM method comprises a working process in which a workpiece and chemically reactive fine particles are allowed to flow along the working face to remove atoms on the working face chemically bonded to the fine particles together with the fine particles through chemical interaction between the fine particles and the working face interface. The workpiece comprises at least two component materials present in a refined mixed state and different from each other in machining speed in the machining process. After the exposure of the workpiece in its working face to an electron beam to conduct modification so that the machining speed of the surface layer part in the working face is substantially even, ultraprecision smoothening is carried out by working process.
摘要翻译：提供一种电子束辅助EEM方法，其能够实现包括玻璃陶瓷材料在内的工件的超精密加工，其中在加工过程中加工速度彼此不同的至少两种组分材料以精炼混合状态存在，表面状态不均匀，表面粗糙度为0.2〜0.05nm RMS。 [解决问题的方法] EEM方法包括一个工作过程，其中允许工件和化学反应性微粒沿着工作面流动，以通过化学处理将微粒与微粒一起化学键合到工作面上的原子微粒与工作面界面之间的相互作用。工件包括以精加工的混合状态存在并且在加工过程中以加工速度彼此不同的至少两种组分材料。在将工件的工作面暴露于电子束进行变形，使得工作面中的表层部的加工速度基本均匀的情况下，通过加工工序进行超精密平滑化。

9. 发明申请

WO02058113A2 ELECTROCHEMICAL METHODS FOR POLISHING COPPER FILMS ON SEMICONDUCTOR SUBSTRATES 审中-公开
标题翻译：用于在半导体衬底上抛光铜膜的电化学方法
公开(公告)号：WO02058113A2
公开(公告)日：2002-07-25
申请号：PCT/IB0200085
申请日：2002-01-15
申请人： STEAG CUTEK SYSTEMS INC
发明人： ZHU MEI , IVANOV IGOR , TING CHIU H
IPC分类号： H01L21/304 , C25D3/38 , C25D5/18 , C25F3/02 , H01L21/321 , H01L21/3213 , H01L21/768 , H01L21/00
CPC分类号： H01L21/32115 , C25D3/38 , C25D5/18 , C25F3/02 , H01L21/7684 , Y10S451/907 , Y10S451/908
摘要： Methods for electrochemically polishing copper films on semiconductor substrates use an alkaline solution with a pH in the range of about 8.0 to 10.5. A constant current density of from 5 to 100 amperes per square foot is applied to an electrochemical cell formed by an electrode, the alkaline solution and the copper film. Copper is removed at a rate of from 500 to 10,000 angstroms per minute. The end point for the electro-polishing is detected by a sudden change in applied voltage. The alkaline polishing solution may also contain copper film. Furthermore, this copper deposition will occur selectively on the exposed copper surface but not on the exposed barrier layer surface. Hence, the method can compensate for dishing and erosion by re-depositing copper in regions after too much copper was removed from those regions.
摘要翻译：在半导体衬底上电化学抛光铜膜的方法使用pH在约8.0至10.5范围内的碱性溶液。将每平方英尺5至100安培的恒定电流密度施加到由电极，碱性溶液和铜膜形成的电化学电池。以每分钟500至10,000埃的速率除去铜。通过施加电压的突然变化来检测电抛光的终点。碱性抛光液也可以含有铜膜。此外，这种铜沉积将选择性地发生在暴露的铜表面上，而不会暴露在阻挡层表面上。因此，该方法可以通过在从这些区域去除太多的铜之后将铜重新沉积在区域中来补偿凹陷和侵蚀。

10. 发明申请

US20040188244A1 Electro-chemical machining apparatus 审中-公开
标题翻译：电化学加工设备
公开(公告)号：US20040188244A1
公开(公告)日：2004-09-30
申请号：US10818818
申请日：2004-04-06
发明人： Shuzo Sato , Zenya Yasuda , Masao Ishihara , Hiizu Ootorii , Takeshi Nogami , Naoki Komai
IPC分类号： B23H003/00
CPC分类号： B24B37/04 , B24B7/228 , B24B21/04 , B24B57/02 , Y10S451/908
摘要： The electro-chemical machining apparatus of this invention is designed to smoothing a metal film by efficiently reducing initial rough surface and removing excessive metal film with reduced damages to the metal film. For this end, the electro-chemical machining apparatus performs electro-chemical machining of an object to be machined having a metal film on the surface to be machined. Such apparatus has a means for holding the object to be machined, a wiper for wiping the surface of the object to be machined, a means for supplying electrolytic solution onto the surface of the object to be machined, a first electrode disposed at a position opposed to the surface of the object to be machined, a second electrode disposed at a peripheral portion on the surface of the object to be machined, and a power supply for causing electrical current to flow between the second electrode on the surface of the object to be machined and the first electrode.
摘要翻译：本发明的电化学加工装置被设计成通过有效地降低初始粗糙表面并且减少对金属膜的损伤去除过量的金属膜来平滑金属膜。为此，电化学加工装置对待加工表面上具有金属膜的被加工物进行电化学加工。这种装置具有用于保持待加工物体的装置，用于擦拭待加工物体的表面的擦拭器，用于将电解液供给到待加工物体的表面上的装置，设置在相对的位置的第一电极到被加工物的表面，设置在被加工物的表面的周边部分的第二电极，以及用于使电流在物体表面上的第二电极之间流动的电源为加工和第一个电极。

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