会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明申请
    • Electroabsorption modulator
    • 电吸收调制器
    • US20040240025A1
    • 2004-12-02
    • US10453376
    • 2003-06-02
    • David P. BourAshish TandonScott W. CorzineChaokun Lin
    • G02F001/03G02F001/07
    • B82Y20/00G02F1/01708G02F2001/0157
    • The electroabsorption modulator comprises a p-i-n junction structure that includes an active layer, a p-type cladding layer and an n-type cladding layer with the active layer sandwiched between the cladding layers. The electroabsorption modulator additionally comprises a quantum well structure located within the active layer. The p-type cladding layer comprises a layer of heavily-doped low-diffusivity p-type semiconductor material located adjacent the active layer that reduces the extension of the depletion region into the p-type cladding layer when a reverse bias is applied to the electroabsorption modulator. The reduced extension increases the strength of the electric field applied to the quantum well structure by a given reverse bias voltage. The increased field strength increases the extinction ratio of the electroabsorption modulator.
    • 电吸收调制器包括p-i-n结结构,其包括有源层,p型包层和n型包覆层,活性层夹在包层之间。 电吸收调制器还包括位于有源层内的量子阱结构。 p型包覆层包括位于有源层附近的重掺杂低扩散性p型半导体材料层,当将反向偏压施加到电吸收时减少耗尽区的扩展到p型覆层 调制器。 缩小的延伸通过给定的反向偏置电压增加施加到量子阱结构的电场的强度。 增加的场强提高了电吸收调制器的消光比。
    • 4. 发明申请
    • Metal plated plastic component with transparent member
    • 带有透明构件的镀金塑料部件
    • US20040239836A1
    • 2004-12-02
    • US10808904
    • 2004-03-25
    • Lee A. Chase
    • G02F001/1335G02F001/03G02F001/07
    • H04M1/0214H04M1/0283H04M2250/16
    • An improved process for preparing assemblies comprising a metal plated plastic component having a transparent member, and the resulting assembly, are provided. The process includes molding a transparent plastic member of a non-plateable thermoplastic material; molding a plastic component around and/or on the transparent plastic member so that the transparent plastic member is physically trapped by the plastic component and/or chemically/electrostatically bonded to the plastic component, the plastic component being molded of a plateable thermoplastic material; and plating a metal onto the plastic component. The process involves fewer steps than known processes, results in less scrap and produces superior assemblies wherein the transparent member is more precisely in registry with the metal plated component.
    • 提供了一种用于制备组件的改进方法,其包括具有透明构件的金属电镀塑料部件和所得到的组件。 该方法包括模制不可镀热塑性材料的透明塑料件; 在透明塑料构件周围和/或上模制塑料部件,使得透明塑料部件被塑料部件物理地捕获和/或化学/静电地结合到塑料部件上,塑料部件由可平板化的热塑性材料模制; 并将金属镀在塑料部件上。 该方法涉及比已知方法更少的步骤,导致更少的废料并产生优良的组件,其中透明构件更精确地与金属镀层的部件对准。
    • 5. 发明申请
    • High-speed silicon-based electro-optic modulator
    • 高速硅基电光调制器
    • US20040208454A1
    • 2004-10-21
    • US10795748
    • 2004-03-08
    • Robert Keith MontgomeryMargaret GhironPrakash GothoskarVipulkumar PatelKalpendu ShastriSoham PathakKatherine A. Yanushefski
    • G02B006/26G02B006/12G02F001/03
    • G02F1/025G02B2006/12142G02B2006/12159G02F1/2257
    • A silicon-based electro-optic modulator is based on forming a gate region of a first conductivity to partially overly a body region of a second conductivity type, with a relatively thin dielectric layer interposed between the contiguous portions of the gate and body regions. The modulator may be formed on an SOI platform, with the body region formed in the relatively thin silicon surface layer of the SOI structure and the gate region formed of a relatively thin silicon layer overlying the SOI structure. The doping in the gate and body regions is controlled to form lightly doped regions above and below the dielectric, thus defining the active region of the device. Advantageously, the optical electric field essentially coincides with the free carrier concentration area in this active device region. The application of a modulation signal thus causes the simultaneous accumulation, depletion or inversion of free carriers on both sides of the dielectric at the same time, resulting in high speed operation.
    • 基于硅的电光调制器基于形成第一导电性的栅极区域以部分地过度地具有第二导电类型的体区,其中相对薄的电介质层插入在栅极和主体区域的邻接部分之间。 调制器可以形成在SOI平台上,其中主体区域形成在SOI结构的相对薄的硅表面层中,并且栅极区域由覆盖SOI结构的相对薄的硅层形成。 控制栅极和体区中的掺杂以形成电介质上方和下方的轻掺杂区域,从而限定器件的有源区。 有利地,光电场基本上与该有源器件区域中的自由载流子浓度区域重合。 因此,调制信号的应用同时导致电介质两侧的自由载流子的同时累积,消耗或反转,导致高速运行。
    • 6. 发明申请
    • Modulatable reflector
    • 可调节反射器
    • US20040190117A1
    • 2004-09-30
    • US10814977
    • 2004-03-31
    • RAUG Electronics
    • Joachim Kubaink
    • G02B006/26G02B006/42G02F001/03G02F001/07G02F001/00
    • G01S17/74
    • A radiation reflecting element (34), more particularly a so-called triple prism or a retro-reflector, is provided with a photonic element on a surface serving either for the passage of an electromagnetic energy beam (light) (40,43) or on one of the surfaces (30-32) serving for the deflection of the beam. The photonic element is characterized by the presence of a photonic band gap (5,7) capable of being shifted e.g. by an electric signal. Thus, with an appropriate selection of the wavelength of the light beam, the photonic element can be switched from reflective to transmissive, thereby allowing a modulation of the light beam with a high modulation depth.
    • 辐射反射元件(34),更具体地是所谓的三棱镜或后向反射器,在用于通过电磁能束(光)(40,43)或 在用于梁的偏转的一个表面(30-32)上。 光子元件的特征在于存在能够被偏移的光子带隙(5,7)。 通过电信号。 因此,通过适当选择光束的波长,光子元件可以从反射切换到透射,从而允许调制具有高调制深度的光束。