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    • 3. 发明申请
    • Magnetic organic light emitting device and method for modulating electroluminescence intensity
    • 磁性有机发光器件和调制电致发光强度的方法
    • US20040190105A1
    • 2004-09-30
    • US10394187
    • 2003-03-24
    • Konrad BussmannAlbert H. Davis
    • H01L035/24H01L051/00G02F001/03G02F001/07
    • H01L51/52H01L51/5206H01L51/5221
    • This invention pertains to a spintronic device for emitting light and to a method for its operation. The device includes a cathode electrode capable of producing spin-polarized charge carrier electrons under the influence of an electric field; an anode electrode spaced from the cathode for producing spin-polarized charge carrier holes; an intermediate medium disposed between the electrodes into which the carriers are injected under the influence of an electric field and which serves as a transport medium for the carriers wherein the carriers are transported and within which the carriers react and form excitons; and a circuit between the electrodes for imparting en electric field which serves as the motive force for the carriers. The method includes the steps of producing spin-polarized electrons, producing spin-polarized holes, passing the electrons and the holes through a transport medium under influence of an electric field whereby the electrons and the holes, being opposite ly charged, combine to produce excitons which produce light, and collecting the light so produced
    • 本发明涉及一种用于发光的自旋电子装置及其操作方法。 该装置包括能够在电场影响下产生自旋极化的载流子电子的阴极电极; 与阴极间隔开的用于产生自旋极化电荷载体孔的阳极电极; 设置在电极之间的中间介质,载流子在电场的影响下被注入到载体中,并且其用作载体的传输介质,其中载体被运送并且其中载体反应并形成激子; 以及用于赋予电场的电极之间的电路,其用作载体的动力。 该方法包括以下步骤:产生自旋极化电子,产生自旋极化孔,使电子和空穴在电场的影响下通过传输介质,从而电子和相反的电荷结合起来产生激子 产生光,并收集如此生产的光
    • 4. 发明申请
    • Test-element-provided substrate, method of manufacturing the same, substrate for electro-optical device, electro-optical device, and electronic apparatus
    • 基于测试元件的基板,其制造方法,电光装置用基板,电光装置和电子设备
    • US20040184131A1
    • 2004-09-23
    • US10751971
    • 2004-01-07
    • SEIKO EPSON CORPORATION
    • Hisaki Kurashina
    • G02F001/03G02F001/07
    • G02F1/136259
    • A plurality of film formation layers on which respective film formation patterns are formed; interlayer films formed among the plurality of film formation layers; test element patterns formed in test element formation regions with the same material as that of each film formation pattern of at least one film formation layer among the plurality of film formation layers; openings formed in the test element formation regions of an interlayer film of a planarized uppermost layer, thereby exposing a pair of pads connected to the test element patterns; and dummy patterns formed below the corresponding one of the pair of pads with the same material as that of each of the film formation patterns of predetermined film formation layers among the plurality of film formation layers, thereby defining the vertical locations of the pads and the contact holes, etc. in the test element formation regions.
    • 多个成膜层,其上形成有各自的成膜图案; 在多个成膜层中形成的层间膜; 在测试元件形成区域中形成的测试元件图案与多个成膜层中的至少一个成膜层的每个成膜图案的材料具有相同的材料; 形成在平坦化最上层的层间膜的测试元件形成区域中的开口,从而暴露连接到测试元件图案的一对焊盘; 以及在所述一对焊盘中的相应的一个焊盘下方形成与所述多个膜形成层中的预定成膜层的每个成膜图案的材料相同的材料的虚拟图案,由此限定焊盘和触点的垂直位置 测试元件形成区域中的孔等。
    • 6. 发明申请
    • MEMS structure with raised electrodes
    • 具有凸起电极的MEMS结构
    • US20040095629A1
    • 2004-05-20
    • US10700734
    • 2003-11-03
    • Glimmerglass Networks, Inc.
    • Bryan P. StakerLawrence P. MurayAndres Fernandez
    • G02F001/03G02F001/07
    • G02B26/0841B81B3/0086B81B2201/042
    • In an electrostatically controlled deflection apparatus, such as a MEMS array having cavities formed around electrodes and which is mounted directly on a dielectric or controllably resistive substrate in which are embedded electrostatic actuation electrodes disposed in alignment with the individual MEMS elements, a mechanism is provided to mitigate the effects of uncontrolled dielectric surface potentials between the MEMS elements and the electrostatic actuation electrodes, the mechanism being raised electrodes relative to the dielectric or controllably resistive surface of the substrate. The aspect ratio of the gaps between elements (element height to element separation ratio) is at least 0.1 and preferably at least 0.5 and preferably between 0.75 and 2.0 with a typical choice of about 1.0, assuming a surface fill factor of 50% or greater. Higher aspect ratios at these fill factors are believed not to provide more than marginal improvement.
    • 在静电控制的偏转装置中,例如具有围绕电极形成的空腔的MEMS阵列,其直接安装在电介质或可控电阻衬底上,其中嵌入的静电致动电极与各个MEMS元件对齐设置, 减轻MEMS元件和静电致动电极之间不受控制的电介质表面电位的影响,该机构是相对于基板的电介质或可控制的电阻表面而升高的电极。 假设表面填充因子为50%以上,元件之间的间隙(元件高度与元素分离比)的纵横比为至少0.1,优选为至少0.5,优选为0.75至2.0,典型的选择为约1.0。 这些填充因子的较高纵横比被认为不能提供更多的边际改进。
    • 10. 发明申请
    • Method for using length dispersion in an etalon to approximate target resonant frequencies
    • 在标准具上使用长度色散近似目标谐振频率的方法
    • US20040004752A1
    • 2004-01-08
    • US10602180
    • 2003-06-24
    • Scott P. Campbell
    • G02F001/03G02F001/07
    • G02B5/285
    • Methods for using the length dispersion of an etalon to approximate desired resonant frequencies. A featured method comprises defining target resonant frequencies; and selecting an etalon having resonant frequencies that approximate the target resonant frequencies, wherein the selection of the etalon is made based at least in part in consideration of a length dispersion of the etalon. A second featured method comprises defining target resonant frequencies; determining a material dispersion for an etalon; and selecting a length dispersion for the etalon suitable to cooperate with the material dispersion to produce resonant frequencies which approximate the target resonant frequencies. Length dispersion selection may include, for example, selection of one or more of a refractive index step, a number of layers, and a layer thickness of one or both dielectric stacks of the etalon. A third featured method comprises determining a length dispersion of an etalon; determining an impact of the length dispersion of the etalon on a plurality of resonant frequencies of the etalon; comparing the plurality of resonant frequencies of the etalon with a plurality of target resonant frequencies; and selecting the etalon for application in an optical system based at least in part on a result of the comparison. The target resonant frequencies may be periodic or quasi-periodic.
    • 使用标准具的长度色散近似所需谐振频率的方法。 特征方法包括定义目标谐振频率; 以及选择具有近似于目标谐振频率的谐振频率的标准具,其中至少部分地考虑到标准具的长度分散来进行标准具的选择。 第二特征方法包括定义目标谐振频率; 确定标准具的材料分散体; 以及选择适于与材料色散配合的标准具的长度色散以产生近似于目标谐振频率的谐振频率。 长度色散选择可以包括例如选择标准具的一个或两个介电叠层的折射率步骤,多个层以及层厚度中的一个或多个。 第三特征方法包括确定标准具的长度分散; 确定标准具的长度色散对标准具的多个谐振频率的影响; 将标准具的多个谐振频率与多个目标谐振频率进行比较; 以及至少部分地基于比较的结果来选择在光学系统中应用的标准具。 目标谐振频率可以是周期性的或准周期的。