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    • 12. 发明公开
    • Field-effect transistor, display element, image display device, and system
    • Feldeffekttransistor,Anzeigeelement,Bildanzeigevorrichtung und Systemdafür
    • EP2819175A1
    • 2014-12-31
    • EP14173930.0
    • 2014-06-25
    • Ricoh Company, Ltd.
    • Ueda, NaoyukiNakamura, YukiMatsumoto, ShinjiSone, YujiTakada, MikikoSaotome, RyoichiArae, SadanoriAbe, Yukiko
    • H01L29/786
    • A field-effect transistor, which contains: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, which are configured to extract electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor is a triclinic crystal compound, a monoclinic crystal compound, or a trigonal crystal compound, each of which is substitutionally doped with at least one dopant selected from the group consisting of a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, and a hexavalent cation, and wherein a valence of the dopant is greater than a valence of a metal ion constituting the n-type oxide semiconductor, excluding the dopant.
    • 一种场效应晶体管,其包含:施加栅极电压的栅电极; 源电极和漏电极,其被配置为提取电流; 由n型氧化物半导体形成的有源层设置成与源电极和漏电极接触; 以及栅极绝缘层,设置在所述栅电极和所述有源层之间,其中所述n型氧化物半导体是三斜晶体化合物,单斜晶体化合物或三元晶体化合物,其中每一个都被至少一个掺杂剂 选自二价阳离子,三价阳离子,四价阳离子,五价阳离子和六价阳离子,并且其中掺杂剂的价态大于构成n型氧化物半导体的金属离子的价态 ,不包括掺杂剂。
    • 14. 发明公开
    • Phase change optical recording medium
    • Optisches Aufzeichnungsmedium mitPhasenänderung
    • EP1223577A3
    • 2006-05-24
    • EP02250177.9
    • 2002-01-10
    • Ricoh Company, Ltd.
    • Nakamura, YukiKatoh, Masaki
    • G11B7/26G11B7/24G11B7/125
    • G11B7/1267C23C14/0623C23C14/3414G11B7/0045G11B7/00454G11B7/0062G11B7/243G11B7/2542G11B7/2585G11B7/259G11B7/26G11B7/268G11B2007/24308G11B2007/2431G11B2007/24314G11B2007/24316
    • A phase change optical recording medium is disclosed together with the methods for optimally initializing and recording such recording media, feasible for carrying out read/write/erase operations at multiple recording velocities ranging from 4.8 m/sec to 30 m/sec. Preferably, a recording layer included in the recording medium essentially consists of Ag, In, Sb and Te, with the proportion in atom % of a(Ag): b(In): c(Sb): d(Te), with 0.1 ≤ a ≤ 7, 2 ≤ b ≤ 10, 64 ≤ c ≤ 92 and 5 ≤ d ≤ 26, provided that a + b + c + d ≥ 97. The method for initializing the recording medium with a scanning beam spot from a high power semiconductor laser is characterized by the energy density input by the beam spot during one period of through scan is equal to, or less than, 1000 J/m 2 , scanning speed of beam spot is in the range of 3.5 m/sec to 6.5 m/sec, and the intensity of laser emission equal to, or greater than 330 mW. Furthermore, the present method for determining an optimum recording power includes at least the step of calculating a normalized gradient g(P), from the equation g(P)= (m/Δm)/(P/ΔP), where ΔP is an infinitesimal change in the vicinity of recording power P, and Δm is an infinitesimal change in the vicinity of signal amplitude m.
    • 公开了一种相位改变光记录介质以及用于最佳地初始化和记录这种记录介质的方法,可用于以4.8m / sec至30m / sec的多个记录速度进行读/写/擦除操作。 优选地,记录介质中包括的记录层基本上由Ag,In,Sb和Te组成,原子%的比例为(Ag):b(In):c(Sb):d(Te),0.1 ‰¤‰¤‰¤‰¤‰¤¤‰‰‰¤¤‰¤¤‰¤¤¤²²‰²¤¤¤¤¤¤¤¤¤¤¤¤¥¥¥¥¥¥¥¥¥¥¥¥¥¥¥¥¥¥¥¥¥ 具有来自大功率半导体激光器的扫描光束点的介质的特征在于通过扫描期间的束斑输入的能量密度等于或小于1000J / m 2,束斑的扫描速度为 3.5m / sec至6.5m / sec的范围,激光发射强度等于或大于330mW。 此外,用于确定最佳记录功率的本方法至少包括从公式g(P)=(m /“m)/(P /”P))计算归一化梯度g(P)的步骤,其中“ P是记录功率P附近的微小变化,“m”是信号幅度m附近的无穷小变化。
    • 20. 发明公开
    • Optical information recording medium
    • Optisches Informationsaufzeichnungsmedium
    • EP1229530A2
    • 2002-08-07
    • EP02250641.4
    • 2002-01-30
    • Ricoh Company, Ltd.
    • Katoh, MasakiNakamura, YukiYamada, Katsuyuki
    • G11B7/24
    • G11B7/243G11B7/006G11B7/126G11B7/2403G11B7/24067G11B7/2542G11B7/258G11B7/2585G11B2007/24308G11B2007/2431G11B2007/24314G11B2007/24316Y10S430/146
    • A phase change optical recording medium is disclosed including at least a supporting substrate, and recording layer essentially consisting of AgInSbTe alloy compositions feasible of implementing recording and readout steps utilizing the change in reflectivity. The recording medium is characterized by the relation v 0 ≥ 0.7 v WH , where the critical relative velocity of phase change, v 0 , defined by the value of v, at which the differential coefficient, - dR (v) /dv, reaches a maximum, when the recording medium moves against an optical unit during the recording steps at a relative velocity, v, ranging from minimum and maximum relative velocities warranted for the recording medium, V WL and V WH , respectively. In addition, when the reflectivity is measured with varying erase power P E at the linear relative scanning velocity v 0 , the reflectivity of the recording layer as a function of erase power, R(P E ), preferably has a minimum. The recording layer included in the recording medium is devised to have an activation energy of deterioration of equal to, or larger than 1.6 eV, which is obtained by measuring asymmetry, A, and calculating according to the equations, k = dt/ dA, and k = k 0 x exp(E a /k B T). The recording medium is also characterized by activation energy of displacement of the boundary, ranging from 1.0 eV to 2.4 eV, which is obtained from the rate of decrease in the area, S, of the amorphous regions as recorded marks with time according to Arrhenius' equation.
    • 公开了一种相变光学记录介质,其至少包括支撑基板和基本上由AgInSbTe合金组成的记录层,该AgInSbTe合金组合物可以利用反射率的变化实现记录和读出步骤。 记录介质的特征在于v 0‰¥0.7 v WH,其中相位变化的临界相对速度v 0由v的值定义,其中微分系数dR(v)/ dv达到 当记录介质在记录步骤期间以相对速度v从记录介质V WL和V WH所需的最小和最大相对速度的相对速度v移动时,记录介质最大。 此外,当以线性相对扫描速度v 0以不同的擦除功率P E测量反射率时,作为擦除功率的函数R(P E)的记录层的反射率优选地具有最小值。 包括在记录介质中的记录层被设计为具有等于或大于1.6eV的衰减的活化能,其通过测量不对称性A获得,并且根据等式计算k = dt / dA和 k = k 0 x exp(E a / k BT)。 记录介质的特征还在于边界位移的活化能为1.0eV至2.4eV,其从非晶区域的减小速率S得到,随着时间的推移,Arrhenius' 方程。