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21. 发明专利

JP2009288504A Positive resist composition, resist pattern forming method, and high molecular compound 有权
标题翻译：积极抗性组合物，抗性图案形成方法和高分子化合物
公开(公告)号：JP2009288504A
公开(公告)日：2009-12-10
申请号：JP2008140783
申请日：2008-05-29
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SHIMIZU HIROAKI , NAKAMURA TAKESHI , MORI YOSHITAKA , FURUYA SANAE , SHIONO HIROHISA , HIRANO TOMOYUKI , DAZAI NAOHIRO
IPC分类号： G03F7/039 , C08F220/26 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a novel high molecular compound to be utilized as a base component of a positive resist composition, a positive resist composition containing the high molecular compound, and a resist pattern forming method using the positive resist composition. SOLUTION: The positive resist composition contains a base component (A) with the solubility to an alkaline developing solution increased by the action of an acid, and an acid generating agent component (B) for generating an acid by exposure. The base component (A) contains a high molecular compound (A1) having a constitutional unit (a0) represented by a specific structure and a constitutional unit (a1) represented by another specific structure. The ratio of the constitutional unit (a0) with respect to the total constitutional units composing the high molecular compound (A1) is 5-50 mole%. The ratio of the constitutional unit (a1) is higher than 10 mole%. The total of the constitutional units (a0) and (a1) is 90 mole% or less. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用作正性抗蚀剂组合物的基础组分的新型高分子化合物，含有高分子化合物的正性抗蚀剂组合物和使用正性抗蚀剂组合物的抗蚀剂图案形成方法。解决方案：正型抗蚀剂组合物含有碱性组分（A），其具有通过酸的作用而对碱性显影溶液的溶解度和通过曝光产生酸的酸产生剂组分（B）。碱成分（A）含有具有由特定结构表示的结构单元（a0）的高分子化合物（A1）和由另一具体结构表示的结构单元（a1）。构成单元（a0）相对构成高分子化合物（A1）的总体构成单位的比例为5-50摩尔％。结构单元（a1）的比例高于10摩尔％。结构单元（a0）和（a1）的总和为90摩尔％以下。版权所有（C）2010，JPO＆INPIT

22. 发明专利

JP2009271146A Resist composition and a method of forming a resist pattern 审中-公开
标题翻译：电阻组合和电阻形成方法
公开(公告)号：JP2009271146A
公开(公告)日：2009-11-19
申请号：JP2008119292
申请日：2008-04-30
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SHIMIZU HIROAKI , NAKAMURA TAKESHI
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist composition and a resist pattern forming method capable of forming a resist pattern of good shape. SOLUTION: The resist composition comprises a base component (A), whose solubility in an alkali developer changes by the action of an acid; an acid-generator component (B) which generates an acid upon exposure to light; γ-butyrolactone; and a nitrogen-containing organic compound (D1), represented by general formula (d1) (wherein R 1 -R 3 are each independently a hydrocarbon group which may have a substituent, where at least one of R 1 -R 3 is a polar group-containing hydrocarbon group and at least one of R 1 -R 3 is a hydrophobic group, and any two of R 1 -R 3 may bond to each other, to form a ring with the nitrogen atom in the formula) and having a molecular weight of 200 or higher. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够形成良好形状的抗蚀剂图案的抗蚀剂组合物和抗蚀剂图案形成方法。抗蚀剂组合物包含碱性组分（A），其在碱性显影剂中的溶解度通过酸的作用而改变; 一种在曝光时产生酸的酸发生剂组分（B）; γ-丁内酯; 和由通式（d1）表示的含氮有机化合物（D1）（其中R 1 -R 3 各自独立地为可以具有取代基的烃基，其中R 1 SP 3 -R SP中的至少一个是含极性基团的烃基，并且R 1 SP < SP> 3 是疏水基团，并且任选的两个R 1可以彼此键合，以形成与氮原子的环式），分子量为200以上。版权所有（C）2010，JPO＆INPIT

23. 发明专利

JP2009062422A Polymer compound, positive resist composition and resist pattern formation method 有权
标题翻译：聚合物化合物，阳性电阻组合物和电阻图案形成方法
公开(公告)号：JP2009062422A
公开(公告)日：2009-03-26
申请号：JP2007229445
申请日：2007-09-04
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： DAZAI NAOHIRO , MORI YOSHITAKA , SHIMIZU HIROAKI , OSHITA KYOKO , HIRAHARA KOMEI
IPC分类号： C08F220/26 , G03F7/039 , H01L21/027
CPC分类号： H04B1/123 , Y10S430/111 , Y10S430/122 , Y10S430/126
摘要： PROBLEM TO BE SOLVED: To provide a new polymer compound, to provide a positive resist composition containing the polymer, and to provide a resist pattern formation method using the positive resist composition.
SOLUTION: Provided is a polymer compound having a constituent unit (a0) represented by general formula (a0-1) (wherein, R
1 is an acid-dissociable dissolution-inhibiting group) and a constituent unit (a1) which is derived from an acrylic ester containing an acid-dissociable dissolution-inhibiting group and does not correspond to the constituent unit (a0).
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种新的高分子化合物，以提供含有聚合物的正性抗蚀剂组合物，并提供使用正性抗蚀剂组合物的抗蚀剂图案形成方法。解决方案：提供具有由通式（a0-1）表示的构成单元（a0）（其中，R 1 是酸解离溶解抑制基团）的聚合物化合物和构成单元（a1），其由含有酸解离溶解抑制基团的丙烯酸酯衍生而不与构成单元（a0）相对应。版权所有（C）2009，JPO＆INPIT

24. 发明专利

JP2008115203A Compound and polymer compound 有权
标题翻译：化合物和聚合物化合物
公开(公告)号：JP2008115203A
公开(公告)日：2008-05-22
申请号：JP2006296893
申请日：2006-10-31
申请人： Daito Chemix Corp , Tokyo Ohka Kogyo Co Ltd , ダイトーケミックス株式会社 , 東京応化工業株式会社
发明人： UCHIUMI YOSHIYUKI , SHIMIZU HIROAKI , OSHITA KYOKO , SHIMAMAKI TOSHIJI , NIWA MASACHIKA , SHU MASAYOSHI
IPC分类号： C08F20/22 , C07C69/54 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0046 , C07C69/653 , C08F220/24 , C08F220/28 , C08F220/68 , G03F7/0397
摘要： PROBLEM TO BE SOLVED: To provide a new compound, and a polymer compound using the compound as a monomer unit, and suitable for a component of a positive type resist composition. SOLUTION: The compound is represented by general formula (I) (wherein, R is a hydrogen atom, a halogen atom, a lower alkyl group or a halogenated lower alkyl group; R 1 to R 3 are each independently an alkyl group or a fluorinated alkyl group; with the proviso that the fluorinated alkyl group is a group in which the fluorine atom is not bonded to a carbon atom neighboring to a tertiary carbon atom bonded to R 1 to R 3 , and at least one of R 1 to R 3 is the fluorinated alkyl group; and R 2 and R 3 may form one ring structure). The polymer or the copolymer thereof is also provided. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种新化合物和使用该化合物作为单体单元的高分子化合物，并适用于正型抗蚀剂组合物的组分。解决方案：该化合物由通式（I）表示（其中R是氢原子，卤素原子，低级烷基或卤代低级烷基; R 1至R 1至R 3 各自独立地为烷基或氟化烷基;条件是氟代烷基是氟原子不与与叔碳原子相邻的碳原子键合的基团至R 1 至R 3 ，并且R 1 至R 3 中的至少一个为氟化烷基 ;和R 2 和R 3 可以形成一个环结构）。还提供了聚合物或其共聚物。版权所有（C）2008，JPO＆INPIT

25. 发明专利

JP2007212990A Positive resist composition for immersion exposure and method for forming resist pattern 审中-公开
标题翻译：用于暴露暴露的积极抵抗组合物和形成耐力模式的方法
公开(公告)号：JP2007212990A
公开(公告)日：2007-08-23
申请号：JP2006117962
申请日：2006-04-21
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SASAKI KAZUHITO , SHIMIZU HIROAKI , ENDO KOUTARO , OSHITA KYOKO
IPC分类号： G03F7/039 , C08F32/00 , H01L21/027
CPC分类号： G03F7/0395 , G03F7/0007 , G03F7/0397 , G03F7/2041
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition for immersion exposure which suppresses material elution in immersion exposure, and a method for forming a resist pattern. SOLUTION: The positive resist composition for immersion exposure contains a resin component (A) having an acid-dissociable dissolution inhibiting group, of which the alkali solubility is increased by the action of an acid, and an acid generator component (B) which generates an acid when exposed to light, wherein the resin component (A) contains a cyclic main chain polymer (A1) and a noncyclic main chain polymer (A2) which has a constitutional unit (a) derived from an acrylic acid as the main chain. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供抑制浸没曝光中的材料洗脱的浸渍曝光用正性抗蚀剂组合物和形成抗蚀剂图案的方法。解决方案：用于浸渍曝光的正型抗蚀剂组合物含有具有酸解离溶解抑制基团的树脂组分（A），其中碱溶解度通过酸的作用而增加，并且酸产生剂组分（B）其在暴露于光时产生酸，其中树脂组分（A）含有环状主链聚合物（A1）和具有以丙烯酸为主体的结构单元（a）的非环状主链聚合物（A2）链。版权所有（C）2007，JPO＆INPIT

26. 发明专利

JP2006003846A Chemically amplified photoresist polymer 审中-公开
标题翻译：化学放大光电聚合物
公开(公告)号：JP2006003846A
公开(公告)日：2006-01-05
申请号：JP2004183058
申请日：2004-06-21
申请人： Daito Chemix Corp , Tokyo Ohka Kogyo Co Ltd , ダイトーケミックス株式会社 , 東京応化工業株式会社
发明人： SHIMAMAKI TOSHIJI , NIWA MASACHIKA , SHU MASAYOSHI , SHIMIZU HIROAKI
IPC分类号： G03F7/039 , C08F8/00 , C08F220/68 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To form a resist pattern having high resolution and low LER (Line Edge Roughness).
SOLUTION: In the chemically amplified photoresist polymer which contains a structural unit (a4) expressed by general formula (I), in the formula (I), R
1 represents a hydrogen atom or a methyl group, R
2 represents a 1-20C straight chain, branched or cyclic hydrocarbon group, each of R
3 , R
4 , R
5 , R
6 independently represents a hydrogen atom or a 1-6C straight or branched alkyl group, R
7 represents a 1-20C straight, branched or cyclic alkylene group, alkylene ether group, cyclohexylene group or arylene group.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：形成具有高分辨率和低LER（线边粗糙度）的抗蚀剂图案。解决方案：在含有由通式（I）表示的结构单元（a4）的化学增幅光致抗蚀剂聚合物中，在式（I）中，R SP 1表示氢原子或甲基基团R 2表示1-20C的直链，支链或环状烃基，R 3，R 3，R SP， > ，R 6 =独立地表示氢原子或1-6C直链或支链烷基，R“表示1-20C的直链，支链或支链烷基，环状亚烷基，亚烷基醚基，亚环己基或亚芳基。版权所有（C）2006，JPO＆NCIPI

27. 发明专利

JP2005206775A Resin for photoresist composition, photoresist composition and method for forming resist pattern 有权
标题翻译：光电组合物树脂，光电组合物和形成电阻图案的方法
公开(公告)号：JP2005206775A
公开(公告)日：2005-08-04
申请号：JP2004057449
申请日：2004-03-02
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： HANEDA HIDEO , TAKESHITA MASARU , MATSUMARU SHOGO , SHIMIZU HIROAKI
IPC分类号： G03F7/033 , C08F2/38 , C08F220/28 , G03F7/004 , G03F7/039 , H01L21/027 , H01L21/30
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/109 , Y10S430/115
摘要： PROBLEM TO BE SOLVED: To provide a resin for a photoresist composition good in resolution and characteristics of line edge roughness, a photoresist composition using the resin and a method for forming a resist pattern.
SOLUTION: The resin for the photoresist composition has a hydroxy group bonding to a carbon atom at a polymer end, where a carbon atom at the α-position of the hydroxy group has at least one electron withdrawing group.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有良好的线边缘粗糙度分辨率和特性的光致抗蚀剂组合物树脂，使用该树脂的光致抗蚀剂组合物和形成抗蚀剂图案的方法。光致抗蚀剂组合物的树脂在聚合物末端具有与碳原子键合的羟基，其中羟基的α-位上的碳原子具有至少一个吸电子基团。版权所有（C）2005，JPO＆NCIPI

28. 发明专利

JP2005053996A Resin 有权
标题翻译：树脂
公开(公告)号：JP2005053996A
公开(公告)日：2005-03-03
申请号：JP2003206588
申请日：2003-08-07
申请人： Daito Chemix Corp , Tokyo Ohka Kogyo Co Ltd , ダイトーケミックス株式会社 , 東京応化工業株式会社
发明人： AIBA KAZUKIYO , NIWA MASACHIKA , SHIMAMAKI TOSHIJI , IWAI TAKESHI , FUJIMURA SATOSHI , SHIMIZU HIROAKI
IPC分类号： G03F7/039 , C08F2/38 , C08F220/12
摘要： PROBLEM TO BE SOLVED: To provide a resin which has dissolution contrast sufficient for practical uses, when used in resists, and can prevent the deformation of a pattern. SOLUTION: This resin which is used for resists and whose solubility in an alkali is increased by the action of an acid is characterized by comprising a star type branched polymer in which polymer chains are extended from a lower alkyl molecule in three or more directions. The resin which is used for resists and whose solubility in an alkali is increased by the action of an acid is characterized by comprising a star type branched polymer obtained by the polymerization of a (meth)acrylate monomer-containing monomer in the presence of a tri- or more-functional chain transfer agent. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供具有足够实际应用的溶解度对比度的树脂，当用于抗蚀剂时，可以防止图案的变形。解决方案：通过酸的作用，用于抗蚀剂和其在碱中的溶解度的树脂的特征在于包含星型支链聚合物，其中聚合物链从三个或更多个的低级烷基分子延伸方向。用于抗蚀剂并且其在碱中的溶解性的树脂通过酸的作用而增加，其特征在于包含通过在（iii）的存在下聚合含（甲基）丙烯酸酯单体的单体而获得的星型支链聚合物 - 或更多功能的链转移剂。版权所有（C）2005，JPO＆NCIPI

29. 发明专利

JP2013072975A Method for forming resist pattern 有权
标题翻译：形成电阻图案的方法
公开(公告)号：JP2013072975A
公开(公告)日：2013-04-22
申请号：JP2011211471
申请日：2011-09-27
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： NITO TAKEHITO , NAKAMURA TAKESHI , SHIMIZU HIROAKI , YOKOYA JIRO
IPC分类号： G03F7/004 , C08F20/58 , G03F7/038 , G03F7/039 , H01L21/027
CPC分类号： G03F7/2041 , G03F7/0045 , G03F7/0046 , G03F7/0397
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern capable of forming a negative pattern having high resolution with suppressed elution.SOLUTION: There is provided a method for forming a resist pattern, the method comprising the steps of: (1) forming a resist film by applying a resist composition comprising a base component whose solubility to an alkali developing solution is increased by an action of an acid and a photobase generator component which generates a base upon exposure to light onto a support; (2) subjecting the resist film to immersion exposure through an immersion medium; (3) baking the film after the step (2) to neutralize a base generated from the photobase generator component by exposure and an acid preliminarily supplied to the resist film in an exposed portion and increasing the solubility to an alkali developing solution of the base component by an action of the acid preliminarily supplied to the resist film in an unexposed portion; and (4) subjecting the resist film to alkali developing to form a negative resist pattern in which the unexposed portion is dissolved and removed. The resist film has a receding contact angle for water of 65° or more.
摘要翻译：要解决的问题：提供一种形成能够形成具有高分辨率的负图案并具有抑制洗脱的抗蚀剂图案的方法。提供了一种形成抗蚀剂图案的方法，所述方法包括以下步骤：（1）通过涂布抗蚀剂组合物形成抗蚀剂组合物，所述抗蚀剂组合物包含碱性组分，其对碱性显影液的溶解度增加酸和光碱产生剂组分的作用，其在暴露于载体上时产生碱; （2）使抗蚀剂膜通过浸渍介质浸渍曝光; （3）在步骤（2）之后烘烤膜以通过曝光中和由基底产生剂组分产生的碱和在暴露部分中预先供应到抗蚀剂膜的酸，并增加其对碱性组分的碱性显影溶液的溶解度通过在未曝光部分中预先供应到抗蚀剂膜的酸的作用; 和（4）使抗蚀剂膜进行碱显影以形成其中未曝光部分被溶解和去除的负抗蚀剂图案。抗蚀剂膜具有65°以上的水的后退接触角。版权所有（C）2013，JPO＆INPIT

30. 发明专利

JP2013068821A Resist composition, and method for forming resist pattern 有权
标题翻译：抗蚀剂组合物和形成耐火图案的方法
公开(公告)号：JP2013068821A
公开(公告)日：2013-04-18
申请号：JP2011207772
申请日：2011-09-22
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： NAKAMURA TAKESHI , YOKOYA JIRO , SHIMIZU HIROAKI , NITO TAKEHITO
IPC分类号： G03F7/038 , C08F12/14 , C08F16/14 , C08F20/10 , G03F7/004 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern for forming a negative pattern, and a resist composition which is usable for the method and excellent in storage stability.SOLUTION: The resist composition includes a base component in which solubility to alkaline developer increases by action of an acid, a photobase generator component which generates a base by exposure, an acid supply component, and a compound (F) which includes at least one kind selected from a fluorine atom and silicon atom, and does not include an acid decomposable group whose polarity increases by action of an acid. The resist pattern formation method includes a step (1) of coating a supporter with the resist composition to form a resist film, a step (2) of exposing the resist film, a step (3) of baking the resist film after the step (2), and a step (4) of alkali-developing the resist film and forming the negative resist pattern in which unexposed part of the resist film is dissolved and removed. The resist composition used in the step (1) is also provided.
摘要翻译：要解决的问题：提供一种用于形成用于形成负型图案的抗蚀剂图案的方法和可用于该方法并且优异的储存稳定性的抗蚀剂组合物。解决方案：抗蚀剂组合物包括其中碱性显影剂的溶解度通过酸的作用增加的碱成分，通过曝光产生碱的光碱产生剂组分，酸供应组分和化合物（F），其包括在至少一种选自氟原子和硅原子，并且不包括通过酸的作用极性增加的酸可分解基团。抗蚀剂图形形成方法包括：用抗蚀剂组合物涂覆支持体以形成抗蚀剂膜的步骤（1），曝光抗蚀剂膜的步骤（2），在步骤之后烘烤抗蚀剂膜的步骤（3） 2）和将抗蚀剂膜碱显影并形成抗蚀剂图案的步骤（4），其中抗蚀剂膜的未曝光部分被溶解并除去。还提供了在步骤（1）中使用的抗蚀剂组合物。版权所有（C）2013，JPO＆INPIT

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