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    • 2. 发明专利
    • Polymer compound, photoresist composition including the polymer compound, and resist pattern formation method
    • 聚合物化合物,包括聚合物化合物的光电组合物和耐蚀图案形成方法
    • JP2011162796A
    • 2011-08-25
    • JP2011111661
    • 2011-05-18
    • Tokyo Ohka Kogyo Co Ltd東京応化工業株式会社
    • OGATA HISAYUKIMATSUMARU SHOGOKINOSHITA YOHEIHANEDA HIDEOSHIONO HIROHISASHIMIZU HIROAKIKUBOTA NAOTAKA
    • C08F220/10G03F7/039
    • PROBLEM TO BE SOLVED: To provide a polymer compound which can constitute a photoresist composition having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of an acid generated from an acid generator is weak, and having favorable sensitivity, the photoresist composition using the polymer compound and a resist pattern formation method using the photoresist composition. SOLUTION: The polymer compound having alkali solubility changeable by the action of acid and contains a structural unit (a1) derived from a compound expressed by general formula (2) (in the formula, R 1 expresses a ≤20C aliphatic cyclic group, (n) expresses integers of 0 or 1-5, R 2 expresses hydrogen atom, fluorine atom or a ≤20C lower alkyl group or a ≤20C fluorinated lower alkyl group) and a structural unit (a3) derived from (meth)acrylic ester containing a lactone-containing single ring or polycyclic group. COPYRIGHT: (C)2011,JPO&INPIT
    • 待解决的问题:为了提供可以构成具有优异分辨率的光致抗蚀剂组合物的高分子化合物,形成具有良好矩形性的精细图案,即使当由酸产生剂产生的酸的酸强度为 弱,并且具有良好的灵敏度,使用高分子化合物的光致抗蚀剂组合物和使用光致抗蚀剂组合物的抗蚀剂图案形成方法。 解决方案:具有碱溶解性的高分子化合物可以通过酸的作用而变化,并含有由通式(2)表示的化合物(式中,R 1 )表示的结构单元(a1) 表示≤20C脂族环状基团,(n)表示0或1-5的整数,R 2表示氢原子,氟原子或≤20C低级烷基或≤20C氟化低级烷基 )和衍生自含有内酯单环或多环基团的(甲基)丙烯酸酯的结构单元(a3)。 版权所有(C)2011,JPO&INPIT
    • 4. 发明专利
    • Process for producing photoresist composition, filter, and coater
    • 生产光催化剂组合物,过滤器和涂料的方法
    • JP2010164980A
    • 2010-07-29
    • JP2010030646
    • 2010-02-15
    • Tokyo Ohka Kogyo Co Ltd東京応化工業株式会社
    • MUROI MASAAKIOZAKI HIROKAZUIWAI TAKESHIHANEDA HIDEOTOMITA HIROAKISHIMAZAKI MASAAKI
    • G03F7/26B01D61/14B01D61/58B01D71/26B01D71/36B01D71/56C08F20/18G03F7/039G03F7/16H01L21/027
    • PROBLEM TO BE SOLVED: To provide a technique to acquire a photoresist composition which can reduce occurrence of defects of a resist pattern after development, has excellent foreign-matter aging characteristics (storage stability), and preferably reduces the change of sensitivity and resist pattern size before and after treatment almost completely. SOLUTION: A process for producing such a photoresist composition includes a step of passing a photoresist composition containing a resin component (A), an acid generator component (B) for generating an acid under exposure, and an organic solvent (C) through a first filter 2a equipped with a first membrane having a critical surface tension of ≥70 dyne/cm, and a step of passing the photoresist composition through a second filter 4a equipped with a second membrane made of a polyolefin resin or a fluorocarbon resin before and/or after the step of passing through the first filter 2a. COPYRIGHT: (C)2010,JPO&INPIT
    • 解决问题:为了提供一种能够减少显影后抗蚀剂图案的缺陷发生的光致抗蚀剂组合物的技术,具有优异的异物老化特性(保存稳定性),优选降低灵敏度的变化, 抗蚀剂图案大小前后几乎完全完成。 解决方案:制备这种光致抗蚀剂组合物的方法包括使含有树脂组分(A)的光致抗蚀剂组合物,用于产生暴露酸的酸产生剂组分(B)和有机溶剂(C)的步骤, 通过装备有临界表面张力≥70达因/厘米的第一膜的第一过滤器2a和使光致抗蚀剂组合物通过装备有由聚烯烃树脂或氟碳树脂制成的第二膜的第二过滤器4a的步骤 和/或在通过第一过滤器2a的步骤之后。 版权所有(C)2010,JPO&INPIT
    • 5. 发明专利
    • Positive resist composition
    • 积极抵抗组成
    • JP2010066772A
    • 2010-03-25
    • JP2009239779
    • 2009-10-16
    • Tokyo Ohka Kogyo Co Ltd東京応化工業株式会社
    • HIRAYAMA HIROSHIHANEDA HIDEOFUJIMURA SATOSHIIWAI TAKESHISATO MITSURUTAKASU RYOICHITACHIKAWA TOSHIKAZUIWASHITA ATSUSHIISHIZUKA KEITAYAMADA TOMOTAKATAKAYAMA JUICHIYOSHIDA MASAAKI
    • G03F7/039G03F7/26C08F220/18G03F7/038H01L21/027
    • PROBLEM TO BE SOLVED: To provide a resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition. SOLUTION: The resist composition is a positive resist composition comprising a resin component (A) which displays increased alkali solubility under the action of an acid, an acid generator component (B) which generates an acid upon exposure, an organic solvent (C) which dissolves the components (A) and (B), and a nitrogen-containing organic compound (D), wherein the resin component (A) has (a1) a constituent unit derived from a (meth)acrylate ester having an acid dissociable, dissolution inhibiting group, (a2) a constituent unit derived from a (meth)acrylate ester having a lactone unit, and (a4) a constituent unit derived from a (meth)acrylate ester having a polycyclic group, but has (a0) (a0-1) no constituent unit containing an anhydride of a dicarboxylic acid and (a0-2) no constituent unit containing a phenolic hydroxyl group. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种相对于在浸没式光刻工艺中使用的溶剂是稳定的并且显示出优异的灵敏度和抗蚀剂图案轮廓的抗蚀剂组合物,以及形成使用这种抗蚀剂组合物的抗蚀剂图案的方法。 抗蚀剂组合物是一种正型抗蚀剂组合物,其包含在酸的作用下显示增加的碱溶性的树脂组分(A),暴露时产生酸的酸产生剂组分(B),有机溶剂( (A)和(B)的组分单元和含有有机化合物(D)的含氮有机化合物(D),其中树脂组分(A)具有(a1)衍生自具有酸的(甲基)丙烯酸酯的结构单元 (a2)衍生自具有内酯单元的(甲基)丙烯酸酯的结构单元,和(a4)衍生自具有多环基的(甲基)丙烯酸酯,但具有(a0) (a0-1)不含有二羧酸的酸酐的组成单元和(a0-2)不含酚羟基的构成单元。 版权所有(C)2010,JPO&INPIT
    • 6. 发明专利
    • Resist composition and method of forming resist pattern
    • 耐蚀组合物和形成耐力图案的方法
    • JP2009244859A
    • 2009-10-22
    • JP2009046064
    • 2009-02-27
    • Tokyo Ohka Kogyo Co Ltd東京応化工業株式会社
    • SHIMIZU HIROAKIYOSHII YASUHIROUTSUMI YOSHIYUKIHANEDA HIDEO
    • G03F7/004C08F220/18G03F7/039H01L21/027
    • G03F7/0045G03F7/0046G03F7/0397G03F7/2041
    • PROBLEM TO BE SOLVED: To provide a resist composition and a method of forming a resist pattern, capable of forming a resist pattern having a satisfactory shape, and exhibiting excellent lithographic characteristics. SOLUTION: The resist composition includes a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid, and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) consisting of a compound represented by general formula (b1): X-Q 1 -Y 1 -SO 3 - A + (wherein Q 1 represents a divalent linkage group containing an oxygen atom; Y 1 represents a 1-4C fluorinated alkylene group which may have a substituent, with the proviso that the carbon atom adjacent to the sulfur atom within the -SO 3 - group has a fluorine atom bonded thereto; X represents a 3-30C hydrocarbon group which may have a substituent; and A + represents an organic cation). The resist composition further includes an organic compound (C) which generates an acid exhibiting a weaker acid strength than the acid generated from the acid generator (B1) upon exposure. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供能够形成具有令人满意的形状并具有优异的光刻特性的抗蚀剂图案的抗蚀剂组合物和形成抗蚀剂图案的方法。 解决方案:抗蚀剂组合物包括在酸的作用下在碱性显影液中表现出改变的溶解度的基础组分(A)和暴露时产生酸的酸产生剂组分(B),酸产生剂组分 B)包括由通式(b1)表示的化合物组成的酸产生剂(B1):XQ 1 -Y 1 - A + (其中Q 1 表示含有氧原子的二价连接基团; Y 1表示1 可以具有取代基的-4C氟化亚烷基,条件是与-SO 3 - 中的硫原子相邻的碳原子与其键合的氟原子 ; X表示可具有取代基的3-30C烃基; A
    • 7. 发明专利
    • Resist composition and a method of forming a resist pattern
    • 电阻组合和电阻形成方法
    • JP2009193036A
    • 2009-08-27
    • JP2008036733
    • 2008-02-18
    • Tokyo Ohka Kogyo Co Ltd東京応化工業株式会社
    • SESHIMO TAKEHIROUTSUMI YOSHIYUKIKAWAKAMI AKINARIHANEDA HIDEO
    • G03F7/039G03F7/004H01L21/027
    • PROBLEM TO BE SOLVED: To provide a resist composition which suppresses variation in optimum exposure energy in the formation of a predetermined resist pattern due to the influence of elapsed time, and a resist pattern forming method using the same. SOLUTION: The resist composition comprises a base component (A) whose solubility in an alkali developer changes by the action of an acid, an acid generator component (B) comprising a compound (B1) represented by general formula (b1-1) (wherein Q 1 is a divalent linking group containing an ester bond; Y 1 is a 1-4C alkylene group or fluorinated alkylene group; X is a 3-30C hydrocarbon group; and A + is an organic cation), and a nitrogen-containing organic compound (D1) prepared by substituting at least one hydrogen atom of ammonia NH 3 by -R 1 -O-R 2 (wherein R 1 is a 1-10C alkylene group; and R 2 is a 1-10C alkyl group which may have a carbonyl group, an ester bond or an ether bond). COPYRIGHT: (C)2009,JPO&INPIT
    • 解决的问题:提供抑制由于经过时间的影响而形成预定抗蚀剂图案的最佳曝光能量的变化的抗蚀剂组合物和使用其的抗蚀剂图案形成方法。 解决方案:抗蚀剂组合物包含其在碱性显影剂中的溶解度由酸的作用而变化的碱性组分(A),包含通式(b1-1)表示的化合物(B1)的酸产生剂组分(B) )(其中Q 1 是含有酯键的二价连接基团; Y 1是1-4C亚烷基或氟化亚烷基; X是3-30C烃 基团; A + 是有机阳离子)和通过用NH取代氨基NH 3的至少一个氢原子制备的含氮有机化合物(D1)-R (其中R 1 是1-10C亚烷基; R 2 是1 可以具有羰基,酯键或醚键的-10C烷基)。 版权所有(C)2009,JPO&INPIT