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1. 发明专利

JP2015156367A ナノ構造材料積層体転移方法及びデバイス审中-公开
标题翻译：纳米结构材料层压转移方法及装置
公开(公告)号：JP2015156367A
公开(公告)日：2015-08-27
申请号：JP2014257002
申请日：2014-12-19
申请人：ザ・ボード・オブ・トラスティーズ・オブ・ザ・ユニバーシティ・オブ・イリノイ , ロームアンドハースエレクトロニックマテリアルズエルエルシー , Rohm and Haas Electronic Materials LLC , ダウグローバルテクノロジーズエルエルシー
发明人：ムーンサブ・シム , ヌリ・オー , ユー・ザイ , スージ・ナム , ジョン・エイ.ロジャーズ , ボン・フーン・キム , サン・ユーン・ヤン , ピーター・トレフォナス・ザ・サード , キショリ・ケイ.デッシュパンデ , ジェボム・ジュ , チチェン・ジェイ.チャン , ジョングン・パク
IPC分类号： H01L29/06 , H05B33/14 , H05B33/22 , B82Y40/00 , B82Y30/00 , B82Y15/00 , H01L33/06 , H01L51/44 , H01L51/48 , H01L31/0352 , H01L31/18 , H01L31/10 , B32B18/00 , B32B9/00 , H05B33/10
CPC分类号： H01L33/0083 , H01L33/06 , H01L33/08 , Y02E10/549 , Y02P70/521
摘要：【課題】量子ドットを含む新規なナノ構造材料複合体の製造方法、及びそのような方法で製造されるデバイスを提供する。【解決手段】(a)1)ナノ構造材料層16及び2)ナノ構造材料層とは異なる1以上の追加の層18、20、22を含む多層複合体16’を、第1の基体10上に提供し、(b)多層複合体を第2の基体30に移すことを含むナノ構造材料複合体を製造する方法。【選択図】図1

2. 发明专利

JP2014195073A Multi-hetero junction nanoparticle, method for manufacturing the same, and article including the nanoparticle 审中-公开
标题翻译：多层结型纳米粒子，其制造方法和包括纳米粒子的物品
公开(公告)号：JP2014195073A
公开(公告)日：2014-10-09
申请号：JP2014050821
申请日：2014-03-13
申请人： Dow Global Technologies Llc , ダウグローバルテクノロジーズエルエルシー , Rohm & Haas Electronic Materials Llc , ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. , Univ Of Illinois The Office Of Technology Management , ザユニバーシティーオブイリノイ,ザオフィスオブテクノロジーマネジメント
发明人： MOONSUB SHIM , NURI OH , YOU ZHAI , SOOJI NAM , PETER TREFONAS , KISHORI DESHPANDE , JAKE JOO
IPC分类号： H01L33/06 , B82Y20/00 , B82Y40/00 , C01B19/04 , C01G11/02
CPC分类号： H01L33/06 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L29/0669 , H01L29/068 , H01L29/127 , H01L33/0083 , H01L33/18 , H01L33/28 , H01L51/502
摘要： PROBLEM TO BE SOLVED: To provide a nanoparticle in which carrier injection is facilitated by generating a plurality of hetero junctions by combining a type I band offset and a type II band offset.SOLUTION: A nanoparticle 100 comprises a one-dimensional semiconductor nanoparticle 102 having a first terminal 104 and a second terminal 106. A first terminal cap 108 is arranged in the first terminal and the second terminal in a one-dimensional nanoparticle, and is directly in contact with the one-dimensional nanoparticle. A first hetero junction 103 is formed in the interface between the first terminal cap and the first terminal in the one-dimensional nanoparticle. The first terminal cap is in contact with a terminal of the one-dimensional semiconductor nanoparticle and not in contact with a portion in a longitudinal direction of the one-dimensional semiconductor nanoparticle. The first terminal cap does not surround the whole of the one-dimensional semiconductor nanoparticle.
摘要翻译：要解决的问题：提供通过组合I型带偏移和II型带偏移来产生多个异质结来促进载流子注入的纳米颗粒。解决方案：纳米颗粒100包括一维半导体纳米颗粒102，其具有第一端子104和第二端子106.第一端子帽108布置在第一端子中，第二端子布置在一维纳米颗粒中，并且直接与一维纳米颗粒接触。在一维纳米颗粒中的第一端帽和第一端之间的界面中形成第一异质结103。第一端帽与一维半导体纳米颗粒的端子接触并且不与一维半导体纳米颗粒的纵向方向上的部分接触。第一端帽不围绕整个一维半导体纳米颗粒。

3. 发明专利

JP2013511844A Novel wet etching agents and methods for the semiconductor Ii~vi 审中-公开
公开(公告)号：JP2013511844A
公开(公告)日：2013-04-04
申请号：JP2012539951
申请日：2010-11-11
申请人：スリーエムイノベイティブプロパティズカンパニー
发明人：グォピンマオ， , マイケルダブリュー．ベンチ， , ザイ−ミンチゥ， , シャオグァンスン，
IPC分类号： H01L21/465
CPC分类号： H01L21/465 , H01L31/02363 , H01L31/06875 , H01L33/0083 , H01L33/0087 , Y02E10/544
摘要： A novel etching agent for etching II-VI semiconductors is provided. The etching agent includes an aqueous solution of potassium permanganate and phosphoric acid. This etching solution can etch II-VI semiconductors at a rapid rate but tend to be much less reactive with III-V semiconductors. The provided agent can be used in a method for etching II-VI semiconductors.

4. 发明专利

JP2010251384A Zinc oxide-based semiconductor device and method of manufacturing the same 有权
标题翻译：基于氧化锌的半导体器件及其制造方法
公开(公告)号：JP2010251384A
公开(公告)日：2010-11-04
申请号：JP2009096486
申请日：2009-04-10
申请人： Stanley Electric Co Ltd , スタンレー電気株式会社
发明人： HORIO TADASHI
IPC分类号： H01L21/28 , H01L33/28
CPC分类号： H01L33/36 , H01L21/02403 , H01L21/02433 , H01L21/02472 , H01L21/02554 , H01L21/02565 , H01L21/02573 , H01L33/0083 , H01L33/28 , H01L33/38 , H01L33/42
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a contact electrode which has high adhesive strength without causing the peeling of an electrode of a p-type ZnO-based compound semiconductor and has satisfactory ohmic contact, to provide the ZnO-based semiconductor device in which the electrode is formed, and to provide a method of manufacturing the ZnO-based semiconductor device.
SOLUTION: The method of manufacturing the ZnO-based semiconductor device includes: a step of forming a contact metal layer containing at least one of Ni and Cu on a p-type ZnO-based semiconductor layer; and a heat treatment step of performing heat treatment of the contact metal layer and the p-type ZnO-based semiconductor layer under an oxygen-free atmosphere to form a mixture layer comprising elements of the p-type ZnO-based semiconductor layer and the contact metal layer at a boundary region between the p-type ZnO-based semiconductor layer and the contact metal layer while maintaining a metal phase layer on a surface of the contact metal layer.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种形成具有高粘合强度的接触电极的方法，而不会引起p型ZnO基化合物半导体的电极的剥离并具有令人满意的欧姆接触，从而提供ZnO- 其中形成电极，并提供一种制造ZnO基半导体器件的方法。解决方案：制造ZnO基半导体器件的方法包括：在p型ZnO基半导体层上形成含有Ni和Cu中的至少一种的接触金属层的步骤; 以及在无氧气氛下进行所述接触金属层和所述p型ZnO系半导体层的热处理的热处理工序，以形成包含所述p型ZnO类半导体层和所述接触层的元素的混合层同时在接触金属层的表面上保持金属相层，在p型ZnO类半导体层和接触金属层之间的边界区域的金属层。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2009298689A Passivation method of non-radiative recombination center of zno sample and passivated zno sample prepared by the method 审中-公开
标题翻译：通过方法制备的ZNO样品和经过钝化的ZNO样品的非放射性重组中心的钝化方法
公开(公告)号：JP2009298689A
公开(公告)日：2009-12-24
申请号：JP2009140430
申请日：2009-06-11
申请人： Commiss Energ Atom , コミツサリアタレネルジーアトミーク
发明人： ROBIN IVAN-CHRISTOPHE , FEUILLET GUY
IPC分类号： C01G9/02 , B82B1/00 , B82B3/00 , H01L33/00 , H01L33/20 , H01L33/24
CPC分类号： H01L33/0083 , B82Y30/00 , B82Y40/00 , H01L21/385 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/22 , H01L33/18 , H01L33/20 , H01L33/24 , H01S3/169 , Y10T428/2958
摘要： PROBLEM TO BE SOLVED: To provide a method by which the center of a non-radiative recombination of ZnO such as the surface state, the dislocation and other non-radioactive recombination center of ZnO is passivated to improve and increase the radiation efficiency of a ZnO sample. SOLUTION: In the method of passivating the center of the non-radiative recombination of ZnO sample, magnesium is deposited on at least one surface of the ZnO sample and annealing of the sample on which magnesium is deposited is carried out in an oxidation atmosphere. The ZnO sample is obtained by this way. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种方法，其中ZnO的非辐射复合的中心如ZnO的表面状态，位错等非放射性复合中心被钝化以提高和增加辐射效率的ZnO样品。解决方案：在钝化ZnO样品的非辐射复合的中心的方法中，镁沉积在ZnO样品的至少一个表面上，并且在其中沉积镁的样品的退火在氧化大气层。通过这种方式获得ZnO样品。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009065050A ZnO-BASED SEMICONDUCTOR DEVICE 审中-公开
标题翻译：基于ZnO的半导体器件
公开(公告)号：JP2009065050A
公开(公告)日：2009-03-26
申请号：JP2007233018
申请日：2007-09-07
申请人： Rohm Co Ltd , Tohoku Univ , ローム株式会社 , 国立大学法人東北大学
发明人： NAKAHARA TAKESHI , YUJI HIROYUKI , KAWASAKI MASASHI , OTOMO AKIRA , TSUKASAKI ATSUSHI
IPC分类号： H01L33/28
CPC分类号： H01L33/16 , H01L21/02403 , H01L21/02414 , H01L21/02433 , H01L21/02554 , H01L21/02565 , H01L21/02579 , H01L21/02609 , H01L33/0083 , H01L33/28
摘要： PROBLEM TO BE SOLVED: To provide a ZnO-based semiconductor device which can be easily made into p-type by reducing a self-compensation effect and suppressing mixing-in of donor impurities. SOLUTION: A perspective axis of a normal line to the principal plane of a Mg x Zn 1-x O (0≤x a degree of the angle; in the a-axis direction, while a perspective axis of the normal line projected on the m-axis-c-axis plane is inclined by Φ m degree of the angle in the m-axis direction. The angle Φ a satisfies 70≤ä90-(180/π)arctan(tan(πΦ a /180)/tan(πΦ m /180))}≤110 and Φ m ≥1. Due to this structure, mixing-in of donor impurities is suppressed and a self-compensation effect is reduced in a ZnO-based semiconductor layer formed on the principal plane, thus making the ZnO-based semiconductor layer into p-type easily. Consequently, a desired ZnO-based semiconductor device can be manufactured. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以通过降低自补偿效应并抑制供体杂质的混入而容易地制成p型的ZnO基半导体器件。＆lt; P＆gt;＆lt; P＆gt;解决方案：与Mg（SB）x Zn 1-x O（0≤x<1）衬底的主平面的法线的透视轴，投影在a轴c轴平面上，倾斜角度的Φ a 度。在m轴方向上突出的法线的透视轴在m轴方向上倾斜角度为Φ m 的方向。角度Φ a 满足70≤ä90-（180 /π）arctan（tan（πΦ a / 180）/ tan（πΦ m / 180））}≤110和Φ m ≥1。由于这种结构，抑制了供体杂质的混入，并且在主面上形成的ZnO类半导体层中的自补偿效果降低，因此使ZnO系半导体层容易成p型。因此，可以制造所需的ZnO基半导体器件。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2008251569A Semiconductor device and its fabrication process, and template substrate 有权
标题翻译：半导体器件及其制造工艺和模板衬底
公开(公告)号：JP2008251569A
公开(公告)日：2008-10-16
申请号：JP2007087127
申请日：2007-03-29
申请人： Stanley Electric Co Ltd , スタンレー電気株式会社
发明人： KATO HIROYUKI , SANO MICHIHIRO
IPC分类号： H01L33/06 , H01L21/363 , H01L33/20 , H01L33/26 , H01L33/36
CPC分类号： H01L21/02579 , H01L21/02403 , H01L21/02472 , H01L21/02488 , H01L21/02502 , H01L21/02554 , H01L21/02631 , H01L33/0083 , H01L33/12 , H01L33/28
摘要： PROBLEM TO BE SOLVED: To provide a ZnO-based semiconductor device in which diffusion of Li contained in a ZnO-based substrate into a semiconductor layer formed on the substrate, is restrained. SOLUTION: The semiconductor device has a ZnO-based substrate 1 containing Li, and a zinc silicate layer 3 formed thereon and restraining diffusion of Li. Through the zinc silicate layer, a light-emitting layer 12 having a quantum well structure consisting of an n-type ZnO layer 11, a ZnO well layer and a ZnMgO barrier layer, and a p-type ZnO layer 13 are grown epitaxially for the ZnO-based substrate. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种ZnO基半导体器件，其中包含在ZnO基衬底中的Li的扩散被限制在形成在衬底上的半导体层中。解决方案：半导体器件具有含有Li的ZnO基衬底1和形成在其上的硅酸锌层3和Li的抑制扩散。通过硅酸锌层，外延生长具有由n型ZnO层11，ZnO阱层和ZnMgO阻挡层构成的量子阱结构的发光层12和p型ZnO层13，基于ZnO的衬底。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2004515441A Preparation of the nanocrystallite 有权
公开(公告)号：JP2004515441A
公开(公告)日：2004-05-27
申请号：JP2002548750
申请日：2001-12-06
申请人：マサチューセッツインスティテュートオブテクノロジーMassachusetts Institute Of Technology
发明人：ネイサンイー．スコット， , マウンギージー．バウェンディー，
IPC分类号： C01B19/04 , C01B17/20 , C01B19/00 , C30B7/00 , C30B7/14 , C30B29/40 , C30B29/48 , C30B29/60 , H01L33/00
CPC分类号： C01B17/20 , B82Y30/00 , C01B19/007 , C01P2004/64 , C30B7/00 , C30B7/14 , C30B29/40 , C30B29/48 , C30B29/605 , H01L33/005 , H01L33/0083 , Y10S516/922 , Y10S977/813 , Y10S977/815 , Y10S977/818 , Y10S977/819 , Y10S977/82 , Y10S977/822 , Y10S977/823 , Y10S977/824 , Y10S977/916 , Y10T428/2991
摘要：本発明は、ナノクリスタライトを製造する方法を特徴とする。このナノクリスタライトは、１５０Å未満の直径を有する。このナノクリスタライトは、狭いサイズ分布を有するナノクリスタライトのメンバーであり得る。このナノクリスタライトは、球形、棒形、円盤形または他の形状であり得る。このナノクリスタライトは、半導体材料のコアを含み得る。コアは、このコアの表面上にオーバーコーティングを有し得る。このオーバーコーティングは、このコアの組成とは異なる組成を有する半導体材料であり得る。

9. 发明专利

JPS5957416A Formation of compound semiconductor layer 失效
标题翻译：形成化合物半导体层
公开(公告)号：JPS5957416A
公开(公告)日：1984-04-03
申请号：JP16810182
申请日：1982-09-27
申请人： Konishiroku Photo Ind Co Ltd
发明人： SHINDOU MASANARI , SATOU SHIGERU , KANEKO AKINARI
IPC分类号： C23C14/00 , C30B23/02 , H01L21/20 , H01L21/203 , H01L21/363
CPC分类号： C30B23/02 , C23C14/0021 , C23C14/0047 , C23C14/0057 , C30B29/40 , C30B29/48 , H01L21/0237 , H01L21/02546 , H01L21/02557 , H01L21/02631 , H01L33/0062 , H01L33/0083 , Y10S117/906 , Y10S438/909
摘要： PURPOSE: To form a thin film with excellent crystalline condition and excellent purity with a high productivity by a method wherein material for a compound semiconductor layer is accumulated on a substrate by sputtering without decomposition under the existance of ionized or activated hydrogen.
CONSTITUTION: A substrate 2 is placed in an upper part in a metal bell jar 1 and BN-made Knudsen-cell type deposition sources 5, 6 are provided below the substrate. Ga 3 and As 4 are put in the cell 5 and the cell 6 respectively. The bell jar 1 is exhausted to vacuum by a vacuum pump to which the bell jar 1 is connected by an exhaust duct 10 with a butterfly valve 8. While hydrogen activated by a gas discharge tube 9 is introduced into the bell jar 1 toward the substrate 2 at the current rate of 100ml/minW200ml/min, the substrate 2 is heated to approximately 400W800°C by a heater 7 and at the same time Ga 3 and As 4 are heated and their vapor is sputtered toward the substrate 2 to form a GaAs film on the substrate 2. The activated hydrogen is supplied so as to keep the rate of vacuum of the bell jar 1, 10
-4 W10
-5 Torr.
COPYRIGHT: (C)1984,JPO&Japio
摘要翻译：目的：通过在离子化或活化氢存在下通过溅射而不分解地将化合物半导体层的材料堆积在基板上的方法，以高的生产率形成具有优异结晶条件和优异纯度的薄膜。构成：将基板2放置在金属钟罩1的上部，并且在基板的下方设置BN制造的克氏电池型沉积源5,6。 Ga 3和As 4分别放入电池5和电池6中。钟罩1通过真空泵排出，真空泵通过带有蝶阀8的排气管道10连接到钟罩1。而由气体放电管9激活的氢气被引入钟罩1中，朝向基板 2以目前的速率为100ml / min-200ml / min，通过加热器7将基板2加热至约400-800℃，同时加热Ga 3和As 4，并将其蒸汽朝向基板2以在基板2上形成GaAs膜。供应活化氢以保持钟罩1的真空度为10 -4 -10 -5乇。

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