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91. 发明申请

US20150270106A1 RADIAL WAVEGUIDE SYSTEMS AND METHODS FOR POST-MATCH CONTROL OF MICROWAVES 有权
标题翻译：径向波形系统和微波匹配控制的方法
公开(公告)号：US20150270106A1
公开(公告)日：2015-09-24
申请号：US14221146
申请日：2014-03-20
申请人： Applied Materials, Inc.
发明人： Satoru Kobayashi , Soonam Park , Dmitry Lubomirsky
IPC分类号： H01J37/32 , H01J37/244
CPC分类号： H01J37/32201 , H01J7/24 , H01J37/244 , H01J37/32229 , H01J37/32302 , H01J37/32311 , H01J37/32935 , H01J37/3299
摘要： A system provides post-match control of microwaves in a radial waveguide. The system includes the radial waveguide, and a signal generator that provides first and second microwave signals that have a common frequency. The signal generator adjusts a phase offset between the first and second signals in response to a correction signal. The system also includes first and second electronics sets, each of which amplifies a respective one of the first and second microwave signals. The system transmits the amplified, first and second microwave signals into the radial waveguide, and matches an impedance of the amplified microwave signals to an impedance presented by the waveguide. The system also includes at least two monitoring antennas disposed within the waveguide. A signal controller receives analog signals from the monitoring antennas, determines the digital correction signal based at least on the analog signals, and transmits the correction signal to the signal generator.
摘要翻译：系统提供径向波导中微波的后匹配控制。该系统包括径向波导和提供具有共同频率的第一和第二微波信号的信号发生器。信号发生器响应于校正信号来调节第一和第二信号之间的相位偏移。该系统还包括第一和第二电子设备组，每个电子组件放大第一和第二微波信号中相应的一个。该系统将放大的第一和第二微波信号传输到径向波导中，并将放大的微波信号的阻抗与由波导呈现的阻抗相匹配。该系统还包括设置在波导内的至少两个监控天线。信号控制器从监控天线接收模拟信号，至少基于模拟信号确定数字校正信号，并将校正信号发送到信号发生器。

92. 发明授权

US09117855B2 Polarity control for remote plasma 有权
标题翻译：远程等离子体的极性控制
公开(公告)号：US09117855B2
公开(公告)日：2015-08-25
申请号：US14230237
申请日：2014-03-31
申请人： Applied Materials, Inc.
发明人： Tae Seung Cho , Yi-Heng Sen , Soonam Park , Dmitry Lubomirsky
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/67 , H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32036 , H01J37/32357 , H01J37/32422 , H01J37/32541 , H01L21/3065
摘要： Methods of controlling the polarity of capacitive plasma power applied to a remote plasma are described. Rather than applying a plasma power which involves both a positive and negative voltage swings equally, a capacitive plasma power is applied which favors either positive or negative voltage swings in order to select desirable process attributes. For example, the plasma power may be formed by applying a unipolar oscillating voltage between an electrode and a perforated plate. The unipolar oscillating voltage may have only positive or only negative voltages between the electrode and the perforated plate. The unipolar oscillating voltage may cross electrical ground in some portion of its oscillating voltage.
摘要翻译：描述了控制施加到远程等离子体的电容等离子体功率的极性的方法。不是施加包括正电压和负电压均等摆动的等离子体功率，而是施加电容性等离子体功率，其有利于正或负电压摆幅，以便选择期望的工艺属性。例如，可以通过在电极和多孔板之间施加单极振荡电压来形成等离子体功率。单极振荡电压在电极和多孔板之间可能仅具有正电压或仅负电压。单极振荡电压可能在其振荡电压的某些部分交叉电接地。

93. 发明申请

US20140097270A1 CHEMICAL CONTROL FEATURES IN WAFER PROCESS EQUIPMENT 有权
标题翻译：过滤设备中的化学控制特性
公开(公告)号：US20140097270A1
公开(公告)日：2014-04-10
申请号：US13799840
申请日：2013-03-13
申请人： Applied Materials, Inc.
发明人： Qiwei Liang , Xinglong Chen , Kien Chuc , Dmitry Lubomirsky , Soonam Park , Jang-Gyoo Yang , Shankar Venkataraman , Toan Tran , Kimberly Hinckley , Saurabh Garg
IPC分类号： B05B1/00
CPC分类号： H01J37/32449 , B05B1/005 , B05B1/18 , C23C16/452 , C23C16/455 , C23C16/45561 , C23C16/45565 , C23C16/45574 , C23C16/45582 , C23C16/50 , H01J37/32009 , H01J37/32357 , H01J37/3244 , H01J37/32568 , H01J2237/002 , H01L21/67069
摘要： Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.
摘要翻译：描述了气体分配组件，其包括环形体，上板和下板。上板可以限定第一多个孔，并且下板可以限定第二和第三多个孔。上板和下板可以彼此耦合并且环形体使得第一和第二孔产生通过气体分配组件的通道，并且在上板和下板之间限定一个体积。

94. 发明申请

US20130306758A1 PRECURSOR DISTRIBUTION FEATURES FOR IMPROVED DEPOSITION UNIFORMITY 审中-公开
标题翻译：用于改进沉积均匀性的前驱物分布特征
公开(公告)号：US20130306758A1
公开(公告)日：2013-11-21
申请号：US13669164
申请日：2012-11-05
申请人： Applied Materials, Inc.
发明人： Soonam Park , Kimberly Hinkley , Qiwei Liang , Jang-Gyoo Yang
IPC分类号： B05B1/18
CPC分类号： B05B1/185 , C23C16/345 , C23C16/45565 , C23C16/45574 , C23C16/45591 , C23C16/503 , C23C16/509 , C23C16/5096
摘要： Showerheads are described including a first plurality of apertures configured to receive a first fluid that may be distributed to a processing region of a semiconductor substrate processing chamber. The first plurality of apertures may include a first set of apertures and a second set of apertures, and the first set of apertures may have an aperture diameter that is greater than the aperture diameter of the second set of apertures. The showerheads may also have a second plurality of apertures configured to receive a second fluid to be distributed to the processing region of the substrate processing chamber. The showerhead may be configured to maintain the first and second fluids fluidly isolated prior to their distribution to the processing region.
摘要翻译：描述的喷头包括构造成接收可分配到半导体衬底处理室的处理区域的第一流体的第一多个孔。第一组多个孔可以包括第一组孔和第二组孔，并且第一组孔可以具有大于第二组孔的孔直径的孔直径。淋浴喷头还可以具有第二多个孔，其构造成接收要分配到基板处理室的处理区域的第二流体。淋浴头可以被配置为在被分配到处理区域之前将第一和第二流体保持流体隔离。

95. 发明授权

US11355317B2 Methods and apparatus for dynamical control of radial uniformity in microwave chambers 有权
公开(公告)号：US11355317B2
公开(公告)日：2022-06-07
申请号：US16218848
申请日：2018-12-13
申请人： APPLIED MATERIALS, INC.
发明人： Satoru Kobayashi , Lance Scudder , David Britz , Soonam Park , Dmitry Lubomirsky , Hideo Sugai
IPC分类号： H01J37/32 , H01L21/67
摘要： Plasma is generated in a semiconductor process chamber by a plurality of microwave inputs with slow or fast rotation. Radial uniformity of the plasma is controlled by regulating the power ratio of a center-high mode and an edge-high mode of the plurality of microwave inputs into a microwave cavity. The radial uniformity of the generated plasma in a plasma chamber is attained by adjusting the power ratio for the two modes without inputting time-splitting parameters for each mode.

96. 发明申请

US20220148894A1 MULTI-ZONE SEMICONDUCTOR SUBSTRATE SUPPORTS 有权
公开(公告)号：US20220148894A1
公开(公告)日：2022-05-12
申请号：US17583935
申请日：2022-01-25
申请人： Applied Materials, Inc.
发明人： Mehmet Tugrul Samir , Dongqing Yang , Dmitry Lubomirsky , Peter Hillman , Soonam Park , Martin Yue Choy , Lala Zhu
IPC分类号： H01L21/67 , H01J37/32 , H01L21/687
摘要： Exemplary support assemblies may include a top puck and a backing plate coupled with the top puck. The support assemblies may include a cooling plate coupled with the backing plate. The support assemblies may include a heater coupled between the cooling plate and the backing plate. The support assemblies may also include a back plate coupled with the backing plate about an exterior of the backing plate. The back plate may at least partially define a volume, and the heater and the cooling plate may be housed within the volume.

97. 发明申请

US20220093364A1 CYLINDRICAL CAVITY WITH IMPEDANCE SHIFTING BY IRISES IN A POWER-SUPPLYING WAVEGUIDE 有权
公开(公告)号：US20220093364A1
公开(公告)日：2022-03-24
申请号：US17542781
申请日：2021-12-06
申请人： Applied Materials, Inc.
发明人： Satoru Kobayashi , Hideo Sugai , Toan Tran , Soonam Park , Dmitry Lubomirsky
IPC分类号： H01J37/32
摘要： A plasma reactor has a cylindrical microwave cavity overlying a workpiece processing chamber, a microwave source having a pair of microwave source outputs, and a pair of respective waveguides. The cavity has first and second input ports in a sidewall and space apart by an azimuthal angle. Each of the waveguides has a microwave input end coupled to a microwave source output and a microwave output end coupled to a respective one of the first and second input ports, a coupling aperture plate at the output end with a rectangular coupling aperture in the coupling aperture plate, and an iris plate between the coupling aperture plate and the microwave input end with a rectangular iris opening in the iris plate.

98. 发明授权

US11264213B2 Chemical control features in wafer process equipment 有权
公开(公告)号：US11264213B2
公开(公告)日：2022-03-01
申请号：US16511990
申请日：2019-07-15
申请人： Applied Materials, Inc.
发明人： Qiwei Liang , Xinglong Chen , Kien Chuc , Dmitry Lubomirsky , Soonam Park , Jang-Gyoo Yang , Shankar Venkataraman , Toan Tran , Kimberly Hinckley , Saurabh Garg
IPC分类号： C23C16/40 , H01J37/32 , B05B1/00 , C23C16/455 , C23C16/452 , B05B1/18 , C23C16/50 , H01L21/67
摘要： Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

99. 发明授权

US11062887B2 High temperature RF heater pedestals 有权
公开(公告)号：US11062887B2
公开(公告)日：2021-07-13
申请号：US16132806
申请日：2018-09-17
申请人： APPLIED MATERIALS, INC.
发明人： Soonam Park , David Benjaminson , Xikun Wang , Dmitry Lubomirsky
IPC分类号： H01J37/32 , H01L21/687 , C23C16/458 , C23C16/455
摘要： Semiconductor processing systems are described, which may include a substrate support assembly having a substrate support surface. Exemplary substrate support assemblies may include a ceramic heater defining the substrate support surface. The assemblies may include a ground plate on which the ceramic heater is seated. The assemblies may include a stem with which the ground plate is coupled. The assemblies may include an electrode embedded within the ceramic heater at a depth from the substrate support surface. The chambers or systems may also include an RF match configured to provide an AC current and an RF power through the stem to the electrode. The RF match may be coupled with the substrate support assembly along the stem. The substrate support assembly and RF match may be vertically translatable within the semiconductor processing system.

100. 发明授权

US11049755B2 Semiconductor substrate supports with embedded RF shield 有权
公开(公告)号：US11049755B2
公开(公告)日：2021-06-29
申请号：US16131972
申请日：2018-09-14
申请人： Applied Materials, Inc.
发明人： David Benjaminson , Michael Grace , Soonam Park , Dmitry Lubomirsky , Jaeyong Cho , Nikolai Kalnin , Don Channa K Kaluarachchi
IPC分类号： H01L21/683 , H01L21/67 , H01J37/32
摘要： Exemplary support assemblies may include a top puck defining a substrate support surface, where the top puck is also characterized by a height. The assemblies may include a stem coupled with the top puck on a second surface of the top puck opposite the substrate support surface. The assemblies may include an RF electrode embedded within the top puck proximate the substrate support surface. The assemblies may include a heater embedded within the top puck. The assemblies may also include a ground shield embedded within the top puck. The ground shield may be characterized by an inner region extending radially through the top puck. The ground shield may further be characterized by an outer region extending perpendicular to the inner region.

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