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1. 发明授权

US11361941B2 Methods and apparatus for processing a substrate 有权
公开(公告)号：US11361941B2
公开(公告)日：2022-06-14
申请号：US16906875
申请日：2020-06-19
申请人： APPLIED MATERIALS, INC.
发明人： Junghoon Kim , Tae Seung Cho , Dmitry Lubomirsky , Toan Tran
IPC分类号： H01J37/32
摘要： Methods and apparatus for processing a substrate are herein described. For example, a processing chamber for processing a substrate includes a chamber body defining a processing volume; a radio frequency (RF) power source configured to deliver RF energy to the processing volume for processing a substrate; a substrate support comprising an electrode; an AC power supply configured to supply power to the processing chamber; an RF filter circuit connected between the electrode and the AC power supply; and a controller configured to monitor an RF voltage at the RF filter circuit that is indirectly induced into the electrode by the RF power source during operation, and to determine a processing state in the processing volume based on the monitored RF voltage.

2. 发明授权

US09728437B2 High temperature chuck for plasma processing systems 有权
公开(公告)号：US09728437B2
公开(公告)日：2017-08-08
申请号：US14612472
申请日：2015-02-03
申请人： Applied Materials, Inc.
发明人： Toan Q. Tran , Sultan Malik , Dmitry Lubomirsky , Shambhu N. Roy , Satoru Kobayashi , Tae Seung Cho , Soonam Park , Shankar Venkataraman
IPC分类号： H01L21/683 , H01L21/3065 , H01L21/67
CPC分类号： H01L21/6833 , H01L21/3065 , H01L21/67103
摘要： A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.

3. 发明授权

US10699879B2 Two piece electrode assembly with gap for plasma control 有权
公开(公告)号：US10699879B2
公开(公告)日：2020-06-30
申请号：US15955588
申请日：2018-04-17
申请人： Applied Materials, Inc.
发明人： Tien Fak Tan , Saravjeet Singh , Dmitry Lubomirsky , Tae Wan Kim , Kenneth D. Schatz , Tae Seung Cho , Lok Kee Loh
IPC分类号： H01J37/32 , H01J37/04
摘要： An apparatus for distributing plasma products includes first and second electrodes that each include planar surfaces. The first electrode forms first apertures from a first planar surface to a second planar surface; the second electrode forms second apertures from the third planar surface to the fourth planar surface. The electrodes couple through one or more adjustable couplers such that the third planar surface is disposed adjacent to the second planar surface with a gap therebetween, the gap having a gap distance. Each of the adjustable couplers has a range of adjustment. The first and second apertures are arranged such that for at least one position within the ranges of adjustment, none of the first apertures aligns with any of the second apertures to form an open straight-line path extending through both the first and second electrodes, and the gap distance is between 0.005 inch and 0.050 inch.

4. 发明申请

US20190272999A1 MAGNETIC INDUCTION PLASMA SOURCE FOR SEMICONDUCTOR PROCESSES AND EQUIPMENT 审中-公开
公开(公告)号：US20190272999A1
公开(公告)日：2019-09-05
申请号：US15909812
申请日：2018-03-01
申请人： Applied Materials, Inc.
发明人： Tae Seung Cho , Soonwook Jung , Junghoon Kim , Satoru Kobayashi , Kenneth D. Schatz , Soonam Park , Dmitry Lubomirsky
IPC分类号： H01L21/3213 , H01L21/67 , H01L21/3105 , H01J37/32 , H05H1/46
摘要： Exemplary magnetic induction plasma systems for generating plasma products are provided. The magnetic induction plasma system may include a first plasma source including a plurality of first sections and a plurality of second sections arranged in an alternating manner and fluidly coupled with each other such that at least a portion of plasma products generated inside the first plasma source may circulate through at least one of the plurality of first sections and at least one of the plurality of second sections inside the first plasma source. Each of the plurality of second sections may include a dielectric material. The system may further include a plurality of first magnetic elements each of which may define a closed loop. Each of the plurality of second sections may define a plurality of recesses for receiving one of the plurality of first magnetic elements therein.

5. 发明申请

US20190259580A1 OPTICAL EMISSION SPECTROSCOPY (OES) FOR REMOTE PLASMA MONITORING 审中-公开
公开(公告)号：US20190259580A1
公开(公告)日：2019-08-22
申请号：US16400615
申请日：2019-05-01
申请人： Applied Materials, Inc.
发明人： Tae Seung Cho , Soonam Park , Junghoon Kim , Dmitry Lubomirsky , Shankar Venkataraman
IPC分类号： H01J37/32 , H01L21/67 , H01L21/311 , G01J3/02 , G01N21/73 , G01J3/443
摘要： Methods and systems for etching substrates using a remote plasma are described. Remotely excited etchants are formed in a remote plasma and flowed through a showerhead into a substrate processing region to etch the substrate. Optical emission spectra are acquired from the substrate processing region just above the substrate. The optical emission spectra may be used to determine an endpoint of the etch, determine the etch rate or otherwise characterize the etch process. A weak plasma may be present in the substrate processing region. The weak plasma may have much lower intensity than the remote plasma. In cases where no bias plasma is used above the substrate in an etch process, a weak plasma may be ignited near a viewport disposed near the side of the substrate processing region to characterize the etchants.

6. 发明申请

US20170309509A1 HIGH TEMPERATURE CHUCK FOR PLASMA PROCESSING SYSTEMS 审中-公开
公开(公告)号：US20170309509A1
公开(公告)日：2017-10-26
申请号：US15642977
申请日：2017-07-06
申请人： Applied Materials, Inc.
发明人： Toan Q. Tran , Sultan Malik , Dmitry Lubomirsky , Shambhu N. Roy , Satoru Kobayashi , Tae Seung Cho , Soonam Park , Shankar Venkataraman
IPC分类号： H01L21/683 , H01L21/67 , H01L21/3065
CPC分类号： H01L21/6833 , H01L21/3065 , H01L21/67103
摘要： A wafer chuck assembly includes a puck, a shaft and a base. An insulating material defines a top surface of the puck, a heater element is embedded within the insulating material, and a conductive plate lies beneath the insulating material. The shaft includes a housing coupled with the plate, and electrical connectors for the heater elements and the electrodes. A conductive base housing couples with the shaft housing, and the connectors pass through a terminal block within the base housing. A method of plasma processing includes loading a workpiece onto a chuck having an insulating top surface, providing a DC voltage differential across two electrodes within the top surface, heating the chuck by passing current through heater elements, providing process gases in a chamber surrounding the chuck, and providing an RF voltage between a conductive plate beneath the chuck, and one or more walls of the chamber.

7. 发明申请

US20150060265A1 DUAL DISCHARGE MODES OPERATION FOR REMOTE PLASMA 有权
标题翻译：双排放模式远程等离子体操作
公开(公告)号：US20150060265A1
公开(公告)日：2015-03-05
申请号：US14468066
申请日：2014-08-25
申请人： Applied Materials, Inc.
发明人： Tae Seung Cho , Yi-Heng Sen , Soonam Park , Dmitry Lubomirsky
IPC分类号： H01J37/32
CPC分类号： H01J37/32596 , H01J37/32018 , H01J37/32357 , H01J37/32449 , H01J37/32541 , H01J37/32568
摘要： Embodiments of the present technology may include a method of processing a semiconductor substrate. The method may include providing the semiconductor substrate in a processing region. Additionally, the method may include flowing gas through a cavity defined by a powered electrode. The method may further include applying a negative voltage to the powered electrode. Also, the method may include striking a hollow cathode discharge in the cavity to form hollow cathode discharge effluents from the gas. The hollow cathode discharge effluents may then be flowed to the processing region through a plurality of apertures defined by electrically grounded electrode. The method may then include reacting the hollow cathode discharge effluents with the semiconductor substrate in the processing region.
摘要翻译：本技术的实施例可以包括处理半导体衬底的方法。该方法可以包括在处理区域中提供半导体衬底。另外，该方法可以包括使气体流过由动力电极限定的空腔。该方法可以进一步包括向被动电极施加负电压。此外，该方法可以包括在空腔中冲击空心阴极放电以从气体形成空心阴极排出流出物。然后可以通过由电接地电极限定的多个孔将空心阴极排出流出物流动到处理区域。该方法可以包括使空心阴极排出流体与处理区域中的半导体衬底反应。

8. 发明授权

US11594428B2 Low temperature chuck for plasma processing systems 有权
公开(公告)号：US11594428B2
公开(公告)日：2023-02-28
申请号：US15581497
申请日：2017-04-28
申请人： Applied Materials, Inc.
发明人： Toan Q. Tran , Zilu Weng , Dmitry Lubomirsky , Satoru Kobayashi , Tae Seung Cho , Soonam Park , Son M. Phi , Shankar Venkataraman
IPC分类号： H01L21/67 , H01L21/3065 , H01L21/683 , H01L21/687 , H01L21/311 , H01J37/32
摘要： A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed proximate to the inner puck element. The shaft includes an electrically conductive shaft housing that is electrically coupled with the plate, and a plurality of connectors, including electrical connectors for the electrodes. The base includes an electrically conductive base housing that is electrically coupled with the shaft housing, and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.

9. 发明授权

US10920320B2 Plasma health determination in semiconductor substrate processing reactors 有权
公开(公告)号：US10920320B2
公开(公告)日：2021-02-16
申请号：US15625454
申请日：2017-06-16
申请人： Applied Materials, Inc.
发明人： Junghoon Kim , Soonam Park , Tae Seung Cho , Dmitry Lubomirsky , Nikolai Kalnin
IPC分类号： C23C16/513 , B81C99/00 , H01L21/66 , H01L21/3065 , C23C16/505 , H01L21/311 , H01J37/32
摘要： Methods of monitoring a plasma while processing a semiconductor substrate are described. In embodiments, the methods include determining the difference in power between the power delivered from the plasma power supply and the power received by the plasma in a substrate processing chamber. The power received may be determined using a V/I sensor positioned after the matching circuit. The power reflected or the power lost is the difference between the delivered power and the received power. The process may be terminated by removing the delivered power if the reflected power is above a setpoint. The VRF may further be fourier transformed into frequency space and compared to the stored fourier transform of a healthy plasma process. Missing frequencies from the VRF fourier transform may independently or further indicate an out-of-tune plasma process and the process may be terminated.

10. 发明授权

US09874524B2 In-situ spatially resolved plasma monitoring by using optical emission spectroscopy 有权
公开(公告)号：US09874524B2
公开(公告)日：2018-01-23
申请号：US15061769
申请日：2016-03-04
申请人： Applied Materials, Inc.
发明人： Tae Seung Cho , Junghoon Kim , Soonwook Jung , Soonam Park , Dmitry Lubomirsky
IPC分类号： G01J3/44 , G01N21/68 , H01J37/10 , H01J37/32
CPC分类号： G01N21/68 , G01J3/0208 , G01J3/0229 , G01J3/0237 , G01J3/0289 , G01J3/06 , G01J3/443 , G01N21/73 , G01N2201/0638 , G01N2201/068 , H01J37/10 , H01J37/32458 , H01J37/32935 , H01J37/32963 , H01J37/32972 , H01J2237/103 , H01J2237/3341
摘要： Implementations of the present disclosure relate to a plasma chamber having an optical device for measuring emission intensity of plasma species. In one implementation, the plasma chamber includes a chamber body defining a substrate processing region therein, the chamber body having a sidewall, a viewing window disposed in the sidewall, and a plasma monitoring device coupled to the viewing window. The plasma monitoring device includes an objective lens and an aperture member having a pinhole, wherein the aperture member is movable relative to the objective lens by an actuator to adjust the focal point in the plasma using principles of optics, allowing only the light rays from the focal point in the plasma to reach the pinhole. The plasma monitoring device therefore enables an existing OES (coupled to the plasma monitoring device through an optical fiber) to monitor emission intensity of the species at any specific locations of the plasma.

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