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91. 发明授权

US07981766B2 Manufacturing method and manufacturing apparatus of semiconductor 有权
标题翻译：半导体的制造方法和制造装置
公开(公告)号：US07981766B2
公开(公告)日：2011-07-19
申请号：US12222546
申请日：2008-08-12
申请人： Shunpei Yamazaki , Koichiro Tanaka
发明人： Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1229 , H01L27/3244 , Y10T29/41
摘要： To provide a manufacturing method of a semiconductor device using an SOI substrate, by which mobility can be improved. A plurality of semiconductor films formed using a plurality of bond substrates (semiconductor substrates) are bonded to one base substrate (support substrate). At least one of the plurality of bond substrates has a crystal plane orientation different from that of the other bond substrates. Accordingly, at least one of the plurality of semiconductor films formed over one base substrate has a crystal plane orientation different from that of the other semiconductor films. The crystal plane orientation of the semiconductor film is determined in accordance with the polarity of a semiconductor element formed using the semiconductor film. For example, an n-channel element in which electrons are majority carriers is formed using a semiconductor film having a face {100}, and a p-channel element in which holes are majority carriers is formed using a semiconductor film having a face {110}.
摘要翻译：为了提供使用SOI衬底的半导体器件的制造方法，可以提高移动性。使用多个接合基板（半导体基板）形成的多个半导体膜被接合到一个基板（支撑基板）。多个接合基板中的至少一个具有不同于其它接合基板的晶面取向。因此，在一个基底基板上形成的多个半导体膜中的至少一个具有不同于其它半导体膜的晶面取向。根据使用半导体膜形成的半导体元件的极性来确定半导体膜的晶面取向。例如，使用具有面{100}的半导体膜，使用具有面{110}的半导体膜形成空穴为多数载流子的p沟道元件，形成电子为多数载流子的n沟道元件 }。

92. 发明授权

US07927983B2 Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device 有权
标题翻译：激光照射方法，激光照射装置以及半导体装置的制造方法
公开(公告)号：US07927983B2
公开(公告)日：2011-04-19
申请号：US10896007
申请日：2004-07-22
申请人： Koichiro Tanaka , Tomoaki Moriwaka
发明人： Koichiro Tanaka , Tomoaki Moriwaka
IPC分类号： H01L21/20
CPC分类号： H01L21/2026 , B23K26/066 , H01L21/02683 , H01L21/02686 , H01L21/268 , H01L27/12 , H01L27/1285 , H01S3/005
摘要： Attenuation regions of laser light are removed or reduced in size using a slit located in the immediate vicinity of a surface to be irradiated so that a steep energy distribution is obtained in the end portions of the laser light. The reason why the slit is located in the immediate vicinity of the surface to be irradiated is to suppress the spread of the laser light. In addition, the attenuation regions of the laser light are folded by using a mirror instead of the slit to increase energy densities in the attenuation regions by one another so that a steep energy density distribution is obtained in the end portions of the laser light.
摘要翻译：使用位于要照射的表面附近的狭缝，去除或减小激光的衰减区域，使得在激光的端部获得陡峭的能量分布。狭缝位于待照射表面附近的原因是为了抑制激光的扩散。此外，通过使用反射镜而不是狭缝折射激光的衰减区域，以使衰减区域中的能量密度相互增加，使得在激光的端部获得陡峭的能量密度分布。

93. 发明授权

US07902002B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07902002B2
公开(公告)日：2011-03-08
申请号：US11631545
申请日：2005-07-25
申请人： Shunpei Yamazaki , Koichiro Tanaka
发明人： Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/1285 , H01L21/0237 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02678 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L27/1296 , H01L29/78621
摘要： When a semi-conductor film is irradiated with conventional pulsed laser light, unevenness, which is called as ridge, is caused on the surface of the semiconductor film. In the case of a top-gate type TFT, element characteristics are changed depending on the ridge. In particular, there is a problem in that variation in the plural thin film transistors electrically connected in parallel with one another. According to the present invention, in manufacturing a circuit including plural thin film transistors, the width LP of a region (not including a microcrystal region) that is melted by irradiating a semiconductor film with light of a continuous wave laser is enlarged, and active layers of a plurality of thin film transistors (that are electrically connected in parallel with one another) are arranged in one region.
摘要翻译：当用传统脉冲激光照射半导体膜时，在半导体膜的表面上产生称为脊的不均匀性。在顶栅型TFT的情况下，元件特性根据脊变化。特别地，存在这样的问题，即多个薄膜晶体管彼此并联电连接的变化。根据本发明，在制造包括多个薄膜晶体管的电路时，通过用连续波激光的光照射半导体膜而熔化的区域（不包括微晶区）的宽度LP被扩大，并且有源层的多个薄膜晶体管（彼此并联电连接）设置在一个区域中。

94. 发明授权

US07883988B2 Method for manufacturing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US07883988B2
公开(公告)日：2011-02-08
申请号：US12469060
申请日：2009-05-20
申请人： Koichiro Tanaka
发明人： Koichiro Tanaka
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： One surface of a single crystal semiconductor substrate is irradiated with ions to form a damaged region in the single crystal semiconductor substrate. An insulating layer is formed over the one surface of the single crystal semiconductor substrate. A surface of a substrate having an insulating surface and a surface of the insulating layer are disposed in contact with each other to bond the substrate having the insulating surface and the single crystal semiconductor substrate to each other. Heat treatment is performed to divide the single crystal semiconductor substrate along the damaged region and to form a semiconductor layer over the substrate having the insulating surface. One surface of the semiconductor layer is irradiated with light from a flash lamp under conditions where the semiconductor layer is not melted, to repair a defect.
摘要翻译：单晶半导体衬底的一个表面被离子照射以在单晶半导体衬底中形成受损区域。在单晶半导体衬底的一个表面上形成绝缘层。具有绝缘表面和绝缘层的表面的基板的表面彼此接触地设置，以将具有绝缘表面的基板和单晶半导体基板彼此接合。进行热处理以沿着损伤区域划分单晶半导体衬底，并在具有绝缘表面的衬底上形成半导体层。在半导体层未熔融的条件下，用来自闪光灯的光照射半导体层的一个表面，以修复缺陷。

95. 发明授权

US07873721B2 Information processing system, information processing apparatus, information processing method, storage medium that stores program for implementing it to be readable by information processing apparatus and that program 有权
标题翻译：信息处理系统，信息处理装置，信息处理方法，存储用于实现信息处理装置可读取的程序的存储介质，
公开(公告)号：US07873721B2
公开(公告)日：2011-01-18
申请号：US11750749
申请日：2007-05-18
申请人： Yosato Hitaka , Akihiro Masukawa , Hiroshi Satomi , Kenji Kasai , Yoichi Matsuyama , Shigeyuki Mitani , Koichiro Tanaka , Satoshi Watanabe , Tomonobu Hiraishi
发明人： Yosato Hitaka , Akihiro Masukawa , Hiroshi Satomi , Kenji Kasai , Yoichi Matsuyama , Shigeyuki Mitani , Koichiro Tanaka , Satoshi Watanabe , Tomonobu Hiraishi
IPC分类号： G06F15/173
CPC分类号： H04N1/00127 , H04N1/00137 , H04N1/00188
摘要： Upon transferring image data stored in a first information processing apparatus (photo site) to a second information processing apparatus (print site), at least one of information that pertains to whether or not the image data is to be acquired by the second information processing apparatus, information that pertains to whether or not the image data has already been acquired by the second information processing apparatus, and information that pertains to the number of times of acquisition of the image data by the second information processing apparatus is managed, and whether or not unwanted image data is transferred to the second information processing apparatus, and whether or not image data illicitly leaks to the second information processing apparatus are monitored on the basis of the managed information. The first information processing apparatus (photo site) prepares required image data in accordance with the current state of a series of processes to be executed by the second information processing apparatus (print site), and passes it to the second information processing apparatus, thereby preventing the first information processing apparatus that saves image data from passing unwanted image data to the second information processing apparatus that processes image data.
摘要翻译：在存储在第一信息处理设备（照片站点）中的图像数据传送到第二信息处理设备（打印站点）时，至少一个与第二信息处理设备是否要获取图像数据有关的信息涉及第二信息处理装置是否已经获取图像数据的信息，以及与第二信息处理装置的图像数据的获取次数有关的信息，以及是否不需要的图像数据被传送到第二信息处理装置，并且基于所管理的信息监视图像数据是否非法泄漏到第二信息处理装置。第一信息处理设备（照片站点）根据第二信息处理设备（打印站点）执行的一系列处理的当前状态来准备所需的图像数据，并将其传递给第二信息处理设备，从而防止将图像数据从不需要的图像数据传送到处理图像数据的第二信息处理装置的第一信息处理装置。

96. 发明授权

US07868267B2 Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device 有权
标题翻译：激光照射装置，激光照射方法和半导体装置的制造方法
公开(公告)号：US07868267B2
公开(公告)日：2011-01-11
申请号：US10207769
申请日：2002-07-31
申请人： Koichiro Tanaka
发明人： Koichiro Tanaka
IPC分类号： B23K26/00
CPC分类号： H01L21/02691 , B23K26/066 , B23K26/067 , B23K26/0676 , B23K26/0732 , B23K26/0736 , B23K26/10 , B23K2101/40 , H01L21/02678 , H01L21/02683 , H01L21/02686 , H01L21/2026 , H01S3/0071
摘要： An object of the present invention is to provide a method and a device for constantly setting the energy distribution of a laser beam on an irradiating face, and uniformly irradiating the laser beam to the entire irradiating face. Further, another object of the present invention is to provide a manufacturing method of a semiconductor device including this laser irradiating method in a process. Therefore, the present invention is characterized in that the shapes of plural laser beams on the irradiating face are formed by an optical system in an elliptical shape or a rectangular shape, and the plural laser beams are irradiated while the irradiating face is moved in a first direction, and the plural laser beams are irradiated while the irradiating face is moved in a second direction and is moved in a direction reverse to the first direction. The plural laser beams may be irradiated while the irradiating face is moved in the first direction, and the plural laser beams may be irradiated while the irradiating face is moved in the direction reverse to the first direction, and the irradiating face may be also moved in the second direction.
摘要翻译：本发明的目的是提供一种用于恒定地设定激光束在照射面上的能量分布的方法和装置，并且将激光束均匀地照射到整个照射面。此外，本发明的另一个目的是提供一种包括该激光照射方法的半导体器件的制造方法。因此，本发明的特征在于，照射面上的多个激光的形状由椭圆形或矩形的光学系统形成，并且在照射面在第一方向，并且在照射面沿第二方向移动并沿与第一方向相反的方向移动时照射多个激光束。可以在照射面沿第一方向移动的同时照射多个激光束，并且可以在照射面沿与第一方向相反的方向移动的同时照射多个激光束，并且照射面也可以在第二个方向。

97. 发明授权

US07816195B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07816195B2
公开(公告)日：2010-10-19
申请号：US12041014
申请日：2008-03-03
申请人： Shunpei Yamazaki , Naoto Kusumoto , Hideto Ohnuma , Koichiro Tanaka
发明人： Shunpei Yamazaki , Naoto Kusumoto , Hideto Ohnuma , Koichiro Tanaka
IPC分类号： H01L21/00
CPC分类号： H01L27/127 , G02F1/13454 , H01L27/1203 , H01L27/1214 , H01L29/4908 , H01L29/66757 , H01L29/78696
摘要： A TFT having a high threshold voltage is connected to the source electrode of each TFT that constitutes a CMOS circuit. In another aspect, pixel thin-film transistors are constructed such that a thin-film transistor more distant from a gate line drive circuit has a lower threshold voltage. In a further aspect, a control film that is removable in a later step is formed on the surface of the channel forming region of a TFT, and doping is performed from above the control film.
摘要翻译：具有高阈值电压的TFT连接到构成CMOS电路的每个TFT的源电极。在另一方面，像素薄膜晶体管被构造成使得离栅极线驱动电路更远的薄膜晶体管具有较低的阈值电压。在另一方面，在TFT的沟道形成区域的表面上形成可在后续步骤中移除的控制膜，并且从控制膜的上方进行掺杂。

98. 发明授权

US07807483B2 Method for manufacturing display device 有权
标题翻译：显示装置制造方法
公开(公告)号：US07807483B2
公开(公告)日：2010-10-05
申请号：US11880948
申请日：2007-07-25
申请人： Shunpei Yamazaki , Koichiro Tanaka , Hironobu Shoji , Hirotada Oishi
发明人： Shunpei Yamazaki , Koichiro Tanaka , Hironobu Shoji , Hirotada Oishi
IPC分类号： H01L21/00
CPC分类号： G02F1/136286 , H01L21/76802 , H01L21/76838 , H01L27/124 , H01L27/1248 , H01L51/5284 , H01L51/529 , H01L51/56 , H01L2227/323
摘要： An object is to provide a display device that can be manufactured by improvement of use efficiency of a material and simplification of a manufacturing process. A light absorbing layer is formed, an insulating layer is formed over the light absorbing layer, the light absorbing layer and the insulating layer are selectively irradiated with laser light, an irradiated region in the insulating layer is removed to form an opening in the insulating layer, and a conductive film is formed in the opening so as to be in contact with the light absorbing layer. The conductive film is formed in the opening so as to be in contact with the light absorbing layer, which is exposed, so that the light absorbing layer and the conductive layer can be electrically connected with the insulating layer interposed therebetween.
摘要翻译：本发明的目的是提供可以通过提高材料的使用效率和简化制造工艺来制造的显示装置。形成光吸收层，在光吸收层上形成绝缘层，用激光选择性地照射光吸收层和绝缘层，去除绝缘层中的照射区域，以在绝缘层中形成开口并且在开口中形成导电膜以与光吸收层接触。导电膜形成在开口中以与被曝光的光吸收层接触，使得光吸收层和导电层可以与插入其间的绝缘层电连接。

99. 发明授权

US07787417B2 Radio communication system 有权
标题翻译：无线通信系统
公开(公告)号：US07787417B2
公开(公告)日：2010-08-31
申请号：US11631291
申请日：2005-07-05
申请人： Hidetoshi Yamasaki , Kenji Miyanaga , Hitoshi Takai , Koichiro Tanaka
发明人： Hidetoshi Yamasaki , Kenji Miyanaga , Hitoshi Takai , Koichiro Tanaka
IPC分类号： H04B7/26
CPC分类号： H04W16/24 , H04W74/08
摘要： In a wireless communication system using the contention method, collisions between transmission signals sent from terminals to a base station are avoided, and a communication area is flexibly formed while suppressing unnecessary radiation of the communication area. The base station includes antennas disposed such that wireless zones cover mutually different areas, wireless units connected to the antennas in one-to-one correspondence, and for, via the respective antennas, receiving wireless signals from the terminal stations in the wireless zones and transmitting wireless signals to the terminal stations in the wireless zones, a data processing unit for processing the wireless signals received by the plurality of wireless units and generate data to be transmitted to the terminal stations, and a communication control unit for controlling the wireless units so as to, during a slot other than a transmission request slot, form one communication area combining the wireless zones of all of the antennas, and during the transmission request slot, form mutually independent communication areas less than or equal in number to the antennas.
摘要翻译：在使用争用方法的无线通信系统中，避免了从终端发送到基站的发送信号之间的冲突，并且在抑制通信区域的不必要的辐射的同时灵活地形成通信区域。基站包括天线布置成使得无线区域覆盖相互不同的区域，一对一对应连接到天线的无线单元，并且经由各个天线，从无线区域中的终端站接收无线信号并发送向无线区域中的终端站发送无线信号;数据处理单元，用于处理由多个无线单元接收到的无线信号，并生成要发送到终端站的数据;以及通信控制单元，用于控制无线单元，以便在除了传输请求时隙之外的时隙中，形成组合所有天线的无线区域的一个通信区域，并且在传输请求时隙期间，形成数量小于或等于天线的相互独立的通信区域。

100. 发明授权

US07767595B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07767595B2
公开(公告)日：2010-08-03
申请号：US11876981
申请日：2007-10-23
申请人： Koichiro Tanaka , Shunpei Yamazaki
发明人： Koichiro Tanaka , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L21/76802 , B23K26/0613 , B23K26/40 , B23K2103/172 , H01L27/124 , H01L27/1288
摘要： In a manufacturing process of a semiconductor device, a manufacturing technique of a semiconductor device by which a lithography step that uses a photoresist is simplified is provided. A manufacturing cost is reduced and throughput is improved. An irradiation object is formed over a substrate by sequentially stacking a first material layer and a second material layer. The irradiation object is irradiated with a first laser beam that is absorbed by the first material layer and a second laser beam that is absorbed by the second material layer so that the laser beams overlap. A part or all of the region irradiated with an overlap part of the laser beams is ablated to form an opening.
摘要翻译：在半导体器件的制造工艺中，提供了简化使用光致抗蚀剂的光刻步骤的半导体器件的制造技术。制造成本降低，生产量提高。通过依次层叠第一材料层和第二材料层，在基板上形成照射物体。照射物体被被第一材料层吸收的第一激光束和被第二材料层吸收的激光束重叠的第二激光束照射。用激光束的重叠部分照射的部分或全部区域被烧蚀以形成开口。

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