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1. 发明授权

US09502690B2 Organic light-emitting device and lighting device with organic resin and glass substrate 有权
标题翻译：有机发光装置和有机树脂和玻璃基板的照明装置
公开(公告)号：US09502690B2
公开(公告)日：2016-11-22
申请号：US13327047
申请日：2011-12-15
申请人： Shunpei Yamazaki , Koichiro Tanaka , Masaaki Hiroki , Hisao Ikeda , Kengo Akimoto
发明人： Shunpei Yamazaki , Koichiro Tanaka , Masaaki Hiroki , Hisao Ikeda , Kengo Akimoto
IPC分类号： H01L51/52 , H01L51/50
CPC分类号： H01L51/5246 , H01L51/50 , H01L51/5212 , H01L51/5237 , H01L51/524 , H01L51/525 , H01L51/5253 , H01L51/5256 , H01L51/5259 , H01L51/5275 , H01L2251/50 , H01L2251/53 , H01L2251/5307 , H01L2251/5323 , H01L2251/5338 , H01L2251/5361
摘要： A highly reliable light-emitting device which includes an organic EL element and is lightweight is provided. The light-emitting device includes a first organic resin layer; a first glass layer over the first organic resin layer; a light-emitting element over the first glass layer; a second glass layer over the light-emitting element; and a second organic resin layer over the second glass layer. The first organic resin layer and the first glass layer each have a property of transmitting visible light. The light-emitting element includes a first electrode having a property of transmitting visible light, a layer containing a light-emitting organic compound, and a second electrode stacked in this order from the first glass layer side.
摘要翻译：提供了包括有机EL元件并且重量轻的高度可靠的发光装置。发光装置包括第一有机树脂层; 第一有机树脂层上的第一玻璃层; 在第一玻璃层上的发光元件; 在所述发光元件上方的第二玻璃层; 和在第二玻璃层上的第二有机树脂层。第一有机树脂层和第一玻璃层各具有透射可见光的性质。发光元件包括具有透射可见光的特性的第一电极，含有发光有机化合物的层和从第一玻璃层侧依次层叠的第二电极。

2. 发明授权

US09401498B2 Light-emitting device, lighting device, substrate, and manufacturing method of substrate 有权
标题翻译：发光装置，照明装置，基板以及基板的制造方法
公开(公告)号：US09401498B2
公开(公告)日：2016-07-26
申请号：US13409889
申请日：2012-03-01
申请人： Koichiro Tanaka , Yusuke Nishido
发明人： Koichiro Tanaka , Yusuke Nishido
IPC分类号： H01L29/08 , H01L51/52 , H01L51/00 , B32B17/06
CPC分类号： H01L51/5275 , B32B17/064 , H01L51/0097 , H01L51/5253 , H01L2251/5338 , Y02E10/549 , Y02P70/521 , Y10T428/24331
摘要： To provide a substrate which is light and has high reliability and high light extraction efficiency from an organic EL element. To provide a substrate which includes a protective layer in a resin layer, an uneven structure on a light incident surface, and an opening which surrounds the uneven structure and through which the protective layer is exposed. To provide a light-emitting device which includes a resin layer provided with an uneven structure on a light incident surface over a protective layer, and a light-emitting element in the protective layer and a counter substrate which are bonded with a sealant. The protective layer and the resin layer have a property of transmitting visible light. The light-emitting element includes a light-transmitting first electrode over a resin layer, a layer containing a light-transmitting organic compound over the first electrode, and a second electrode over the layer containing a light-transmitting organic compound.
摘要翻译：从有机EL元件提供光，并且具有高可靠性和高光提取效率的基板。提供一种在树脂层中包括保护层的基板，在光入射表面上的不均匀结构，以及围绕该不平坦结构的开口，并且保护层暴露于该基板。提供一种发光装置，其包括在保护层上的光入射表面上设置有不均匀结构的树脂层，以及保护层中的发光元件和与密封剂接合的对置基板。保护层和树脂层具有透射可见光的性质。发光元件包括树脂层上的透光第一电极，在第一电极上包含透光有机化合物的层，以及包含透光有机化合物的层上的第二电极。

3. 发明授权

US09178069B2 Semiconductor device and semiconductor device production system 有权
公开(公告)号：US09178069B2
公开(公告)日：2015-11-03
申请号：US12533401
申请日：2009-07-31
申请人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
发明人： Atsuo Isobe , Shunpei Yamazaki , Koji Dairiki , Hiroshi Shibata , Chiho Kokubo , Tatsuya Arao , Masahiko Hayakawa , Hidekazu Miyairi , Akihisa Shimomura , Koichiro Tanaka , Mai Akiba
IPC分类号： H01L21/268 , H01L29/786 , H01L21/3213 , H01L21/02 , B23K26/073 , H01L21/20 , H01L21/84 , H01L29/66 , H01L27/12
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

4. 发明授权

US09066432B2 Copper foil for printed wiring board 有权
标题翻译：铜箔印刷线路板
公开(公告)号：US09066432B2
公开(公告)日：2015-06-23
申请号：US13988183
申请日：2010-11-17
申请人： Koichiro Tanaka , Misato Chuganji
发明人： Koichiro Tanaka , Misato Chuganji
IPC分类号： B32B15/08 , H05K1/09 , C23C14/16 , C23C28/02 , H05K3/38 , C23C26/00 , H05K1/03 , H05K3/02
CPC分类号： H05K1/09 , C23C14/165 , C23C26/00 , C23C28/023 , H05K1/0393 , H05K3/022 , H05K3/384 , Y10T428/12438 , Y10T428/12569 , Y10T428/12819 , Y10T428/1291
摘要： Provided is a copper foil for a printed wiring board, the copper foil being suitable for achieving finer pitch, favorable in terms of manufacturing cost, and excellent both in etching ability and adhesion to an insulating substrate. The copper foil for a printed wiring board comprises a copper foil base material and a covering layer for covering at least a portion of a surface of the copper foil base material, wherein the covering layer is formed by an nickel-vanadium alloy layer containing nickel and vanadium, and a chromium layer, laminated in this order from the surface of the copper foil base material; the chromium layer contains chromium in an amount of 15-210 μg/dm2; the nickel-vanadium alloy layer contains nickel and vanadium in a combined covering amount of 20-600 μg/dm2; and the nickel-vanadium alloy layer contains vanadium in an amount of 3-70 wt %.
摘要翻译：提供一种用于印刷线路板的铜箔，铜箔适合于实现更细的节距，在制造成本方面是有利的，并且在蚀刻能力和对绝缘基板的粘合性方面均优异。用于印刷电路板的铜箔包括铜箔基材和用于覆盖铜箔基材表面的至少一部分的覆盖层，其中覆盖层由含有镍的镍 - 钒合金层形成，钒和铬层，从铜箔基材的表面依次层叠; 铬层含有15〜210μg/ dm 2的铬; 镍钒合金层含有合并覆盖量为20-600μg/ dm2的镍和钒; 镍钒合金层含有3-70重量％的钒。

5. 发明授权

US08593059B2 Lighting device 有权
标题翻译：照明设备
公开(公告)号：US08593059B2
公开(公告)日：2013-11-26
申请号：US13371779
申请日：2012-02-13
申请人： Koichiro Tanaka , Yusuke Nishido
发明人： Koichiro Tanaka , Yusuke Nishido
IPC分类号： H01J1/63
CPC分类号： H01L51/5253 , H01L27/3204 , H01L51/524 , H01L51/5246 , H01L51/5259 , H01L51/5275 , H01L2251/5315 , H01L2251/5361 , H01L2251/558
摘要： The lighting device includes a layer containing a light-emitting organic compound which is provided over a substrate; a first barrier layer covering the layer containing a light-emitting organic compound; a second barrier layer provided over the first barrier layer; a sealant provided between the first barrier layer and the second barrier layer; a resin layer including a desiccant which is surrounded by the first barrier layer, the second barrier layer, and the sealant; and a resin substrate which is provided over the second barrier layer and has a first uneven structure on a surface in contact with the second barrier layer and a second uneven structure on a surface in contact with the air, and the second uneven structure has a larger height difference than the first uneven structure.
摘要翻译：照明装置包括设置在基板上的含有发光有机化合物的层; 覆盖含有发光有机化合物的层的第一阻挡层; 设置在所述第一阻挡层上的第二阻挡层; 设置在所述第一阻挡层和所述第二阻挡层之间的密封剂; 包括由第一阻挡层，第二阻挡层和密封剂包围的干燥剂的树脂层; 以及树脂基板，设置在所述第二阻挡层上并且在与所述第二阻挡层接触的表面上具有第一凹凸结构，以及在与空气接触的表面上具有第二凹凸结构，并且所述第二凹凸结构具有较大的高度差高于第一不均匀结构。

6. 发明授权

US08581234B2 Deposition method and manufacturing method of light-emitting device 有权
标题翻译：发光装置的沉积方法和制造方法
公开(公告)号：US08581234B2
公开(公告)日：2013-11-12
申请号：US12391785
申请日：2009-02-24
申请人： Shunpei Yamazaki , Koichiro Tanaka , Takahiro Ibe , Satoshi Seo
发明人： Shunpei Yamazaki , Koichiro Tanaka , Takahiro Ibe , Satoshi Seo
IPC分类号： H01L33/02
CPC分类号： H01L51/0013 , C23C14/048 , H01L51/56
摘要： Part of a material layer is deposited on a deposition target surface of a second substrate by steps of providing a first substrate having a light absorption layer and a material layer in contact with the light absorption layer over one of surfaces; making a surface of the first substrate over which the material layer is formed and a deposition target surface of a second substrate face to each other; depositing part of the material layer on the deposition target surface of the second substrate in such a manner that irradiation with laser light of which repetition rate is greater than or equal to 10 MHz and pulse width is greater than or equal to 100 fs and less than or equal to 10 ns is performed from the other surface side of the first substrate to selectively heat part of the material layer overlapping with the light absorption layer.
摘要翻译：材料层的一部分通过以下步骤沉积在第二衬底的沉积靶表面上：通过提供具有光吸收层的第一衬底和与光吸收层接触的材料层在一个表面上的步骤; 制作形成材料层的第一基板的表面和第二基板的沉积目标表面彼此面对; 在第二基板的沉积靶表面上沉积材料层的一部分，使得以重复率大于或等于10MHz的激光照射并且脉冲宽度大于或等于100fs并小于或者等于10ns从第一基板的另一表面侧进行选择性地加热与光吸收层重叠的材料层的一部分。

7. 发明授权

US08574976B2 Semiconductor device and manufacturing method thereof 失效
公开(公告)号：US08574976B2
公开(公告)日：2013-11-05
申请号：US12904235
申请日：2010-10-14
申请人： Shunpei Yamazaki , Naoto Kusumoto , Hideto Ohnuma , Koichiro Tanaka
发明人： Shunpei Yamazaki , Naoto Kusumoto , Hideto Ohnuma , Koichiro Tanaka
IPC分类号： H01L21/00
CPC分类号： H01L27/127 , G02F1/13454 , H01L27/1203 , H01L27/1214 , H01L29/4908 , H01L29/66757 , H01L29/78696
摘要： A TFT having a high threshold voltage is connected to the source electrode of each TFT that constitutes a CMOS circuit. In another aspect, pixel thin-film transistors are constructed such that a thin-film transistor more distant from a gate line drive circuit has a lower threshold voltage. In a further aspect, a control film that is removable in a later step is formed on the surface of the channel forming region of a TFT, and doping is performed from above the control film.

8. 发明授权

US08546210B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08546210B2
公开(公告)日：2013-10-01
申请号：US12794120
申请日：2010-06-04
申请人： Yoshiaki Yamamoto , Koichiro Tanaka , Atsuo Isobe , Daisuke Ohgarane , Shunpei Yamazaki
发明人： Yoshiaki Yamamoto , Koichiro Tanaka , Atsuo Isobe , Daisuke Ohgarane , Shunpei Yamazaki
IPC分类号： H01L21/336
CPC分类号： H01L21/6835 , H01L21/02532 , H01L21/02683 , H01L21/02691 , H01L21/84 , H01L23/544 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L27/12 , H01L29/78603 , H01L29/78648 , H01L2221/6835 , H01L2223/5442 , H01L2223/54426 , H01L2223/6677 , H01L2224/16 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01L2224/83191 , H01L2224/838 , H01L2224/85 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/04941 , H01L2924/04953 , H01L2924/0665 , H01L2924/0781 , H01L2924/10253 , H01L2924/12044 , H01L2924/14 , H01L2924/15788 , H01L2924/19043 , H01L2924/30105 , H01Q1/38 , H01Q9/285 , H01Q23/00 , Y10S438/982 , H01L2924/00 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.
摘要翻译：本发明的目的是提供一种通过与专利文献1中公开的方法不同的方法从衬底分离薄膜晶体管和包括薄膜晶体管的电路或半导体器件的方法，并且将薄膜晶体管，以及电路或半导体器件到具有柔性的衬底。根据本发明，在绝缘膜上形成大的开口或多个开口，在开口处形成连接到薄膜晶体管的导电膜，并且去除剥离层，然后，将具有薄的薄膜晶体管转置到具有导电膜等的基板上。根据本发明的薄膜晶体管具有通过激光照射而结晶的半导体膜，并且防止剥离层在不被激光照射的激光照射下曝光。

9. 发明申请

US20130240257A1 COPPER FOIL FOR PRINTED WIRING BOARD 有权
标题翻译：铜箔印刷线路板
公开(公告)号：US20130240257A1
公开(公告)日：2013-09-19
申请号：US13988183
申请日：2010-11-17
申请人： Koichiro Tanaka , Misato Chuganji
发明人： Koichiro Tanaka , Misato Chuganji
IPC分类号： H05K1/09
CPC分类号： H05K1/09 , C23C14/165 , C23C26/00 , C23C28/023 , H05K1/0393 , H05K3/022 , H05K3/384 , Y10T428/12438 , Y10T428/12569 , Y10T428/12819 , Y10T428/1291
摘要： Provided is a copper foil for a printed wiring board, the copper foil being suitable for achieving finer pitch, favorable in terms of manufacturing cost, and excellent both in etching ability and adhesion to an insulating substrate. The copper foil for a printed wiring board comprises a copper foil base material and a covering layer for covering at least a portion of a surface of the copper foil base material, wherein the covering layer is formed by an nickel-vanadium alloy layer containing nickel and vanadium, and a chromium layer, laminated in this order from the surface of the copper foil base material; the chromium layer contains chromium in an amount of 15-210 μg/dm2; the nickel-vanadium alloy layer contains nickel and vanadium in a combined covering amount of 20-600 μg/dm2; and the nickel-vanadium alloy layer contains vanadium in an amount of 3-70 wt %.
摘要翻译：提供一种用于印刷线路板的铜箔，铜箔适合于实现更细的节距，在制造成本方面是有利的，并且在蚀刻能力和对绝缘基板的粘合性方面均优异。用于印刷电路板的铜箔包括铜箔基材和用于覆盖铜箔基材表面的至少一部分的覆盖层，其中覆盖层由含有镍的镍 - 钒合金层形成，钒和铬层，从铜箔基材的表面依次层叠; 铬层含有15〜210mug / dm 2的铬; 镍钒合金层含有合并覆盖量为20〜600mug / dm 2的镍和钒; 镍钒合金层含有3-70重量％的钒。

10. 发明授权

US08492248B2 Manufacturing method of semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US08492248B2
公开(公告)日：2013-07-23
申请号：US13040302
申请日：2011-03-04
申请人： Koichiro Tanaka
发明人： Koichiro Tanaka
IPC分类号： H01L21/322
CPC分类号： H01L21/84 , H01L21/76254 , H01L29/458 , H01L29/66772 , H01L29/78621
摘要： A surface of a single crystal semiconductor substrate is irradiated with ions to form a damaged region, an insulating layer is formed over the surface of the single crystal semiconductor substrate, and a surface of a substrate having an insulating surface is made to be in contact with a surface of the insulating layer to bond the substrate having an insulating surface to the single crystal semiconductor substrate. Then, the single crystal semiconductor substrate is separated at the damaged region by performing heat treatment to form a single crystal semiconductor layer over the substrate having an insulating surface, and the single crystal semiconductor layer is patterned to form a plurality of island-shaped semiconductor layers. One of the island-shaped semiconductor layers is irradiated with a laser beam which is shaped to entirely cover the island-shaped semiconductor layer.
摘要翻译：用离子照射单晶半导体衬底的表面以形成受损区域，在单晶半导体衬底的表面上形成绝缘层，并且使具有绝缘表面的衬底的表面与绝缘层的表面，以将具有绝缘表面的衬底结合到单晶半导体衬底。然后，通过进行热处理，在具有绝缘面的基板上形成单晶半导体层，在损伤区域分离单晶半导体基板，对单晶半导体层进行图案化，形成多个岛状半导体层。用形成为完全覆盖岛状半导体层的激光束照射其中一个岛状半导体层。

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