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91. 发明授权

US08058710B2 Interconnects having sealing structures to enable selective metal capping layers 有权
标题翻译：具有密封结构以实现选择性金属覆盖层的互连
公开(公告)号：US08058710B2
公开(公告)日：2011-11-15
申请号：US12079683
申请日：2008-03-28
申请人： Jun He , Kevin J. Fischer , Ying Zhou , Peter K. Moon
发明人： Jun He , Kevin J. Fischer , Ying Zhou , Peter K. Moon
IPC分类号： H01L23/48
CPC分类号： H01L21/76849 , H01L21/0217 , H01L21/02252 , H01L21/32053 , H01L21/76802 , H01L21/76834 , H01L21/76844 , H01L21/76856 , H01L21/76865 , H01L21/76877 , H01L21/76888 , H01L23/5283 , H01L23/53209 , H01L23/53228 , H01L23/53238 , H01L23/53266 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： Methods of fabricating a capped interconnect for a microelectronic device which includes a sealing feature for any gaps between a capping layer and an interconnect and structures formed therefrom. The sealing features improve encapsulation of the interconnect, which substantially reduces or prevents electromigration and/or diffusion of conductive material from the capped interconnect.
摘要翻译：制造用于微电子器件的封盖互连的方法，其包括封盖层和互连件之间的任何间隙的密封特征以及由其形成的结构。密封特征改善了互连的封装，其基本上减少或防止导电材料从封盖互连件的电迁移和/或扩散。

92. 发明申请

US20100257499A1 TECHNIQUES FOR FAST AREA-EFFICIENT INCREMENTAL PHYSICAL SYNTHESIS 审中-公开
标题翻译：用于快速增强体力合成的技术
公开(公告)号：US20100257499A1
公开(公告)日：2010-10-07
申请号：US12416960
申请日：2009-04-02
申请人： Charles J. Alpert , Zhuo Li , Chin Ngai Sze , Louise H. Trevillyan , Ying Zhou
发明人： Charles J. Alpert , Zhuo Li , Chin Ngai Sze , Louise H. Trevillyan , Ying Zhou
IPC分类号： G06F17/50
CPC分类号： G06F17/5068
摘要： A fast technique for circuit optimization in a physical synthesis flow iteratively repeats slew-driven (timerless) buffering and repowering with a changing slew target. Buffers are added as necessary with each iteration to bring the nets in line with the new slew target, but any nets having positive slack from the previous iteration are skipped, and that slack information is cached for future timing analysis. Buffer insertion is iteratively repeated with incrementally decreasing slew until a minimum slew is reached, or when none of the nets have negative slack. Iteratively repeating the timerless buffering and repowering while gradually decreasing the slew constraint in this manner results in a design structure which retains high quality of results with significantly smaller area and wire length, and with only a small computational overhead.
摘要翻译：物理合成流中电路优化的快速技术可以迭代地重复使用转换驱动（定时器）缓冲并使用更改的转换目标重新启动。根据需要，每次迭代添加缓冲区，使网格与新的转换目标一致，但是跳过与上一次迭代相反的任何网络，并且缓存信息被缓存以便将来进行时序分析。缓冲区插入被迭代重复，逐渐减小，直到达到最小的转差，或者当没有网络有负的松弛时。以这种方式迭代地重复定时器缓冲和重新赋能，同时以这种方式逐渐减小摆动约束导致设计结构，其保持高质量的结果，具有明显更小的面积和导线长度，并且仅具有小的计算开销。

93. 发明申请

US20100035343A1 SYSTEM AND METHOD FOR CONTROLLING A MAMMALIAN CELL CULTURE PROCESS 有权
标题翻译：用于控制MAMMALIAN细胞培养方法的系统和方法
公开(公告)号：US20100035343A1
公开(公告)日：2010-02-11
申请号：US12536559
申请日：2009-08-06
申请人： Alan T.Y. Cheng , Ying Zhou , Balazs Hunek , Amitabh Gupta , Nigel Grinter
发明人： Alan T.Y. Cheng , Ying Zhou , Balazs Hunek , Amitabh Gupta , Nigel Grinter
IPC分类号： C12N5/02 , C12M1/02 , C12M1/34 , C12M1/36 , C12M1/00
CPC分类号： C12N1/38 , C12M27/02 , C12M29/22
摘要： A system and method for controlling a mammalian cell culture process are provided. Such control of the cell culture process involves control of the level of dissolved carbon dioxide in the cell culture media and the resulting ability to prevent increases in the osmolality level is achieved by enhanced stripping of carbon dioxide with little or no damage to the mammalian cells. The disclosed methods and systems of dissolved carbon dioxide stripping include enhanced surface gas exchange mechanisms within the bioreactor vessel through the use of an upward flow impeller combined with vertical baffles to convert swirling motions of the liquid into a largely vertical flow.
摘要翻译：提供了一种用于控制哺乳动物细胞培养方法的系统和方法。细胞培养过程的这种控制涉及控制细胞培养基中溶解的二氧化碳的水平，并且通过增强对二氧化碳的去除而对哺乳动物细胞几乎没有或没有损伤来实现所产生的渗透压浓度增加的能力。所公开的溶解二氧化碳汽提方法和系统包括通过使用与垂直挡板结合的向上流动叶轮将生物反应器容器内的表面气体交换机制改进为将液体的旋转运动转化成大体垂直的流动。

94. 发明申请

US20090119499A1 METHOD AND MICRO-SYSTEM FOR UPDATING CONFIGURATIONS OF TARGET SYSTEM IN COMPUTER 有权
标题翻译：用于更新计算机中目标系统配置的方法和微系统
公开(公告)号：US20090119499A1
公开(公告)日：2009-05-07
申请号：US12265703
申请日：2008-11-05
申请人： Rui Xin Cao , Le He , Xing Jin , Pei Ni Liu , Qing Bo Wang , Ying Zhou
发明人： Rui Xin Cao , Le He , Xing Jin , Pei Ni Liu , Qing Bo Wang , Ying Zhou
IPC分类号： G06F15/177
CPC分类号： H04L63/20 , G06F21/57 , H04L63/145 , H04L67/34
摘要： A technique for updating configurations of a target system in a computer. The method comprises booting, based on Preboot Execution Environment technology, a micro-system for updating configurations of a target system before booting the target system, the micro-system performing the steps of: (a) acquiring target configuration packages via a network from a server; (b) extracting target configuration data from said target configuration packages; and (c) updating the configurations of said target system by using said target configuration data, wherein said micro-system is independent of said target system.
摘要翻译：一种用于更新计算机中目标系统的配置的技术。该方法包括基于预引导执行环境技术引导用于在引导目标系统之前更新目标系统的配置的微系统，微系统执行以下步骤：（a）经由网络从目标系统获取目标配置包服务器; （b）从所述目标配置包提取目标配置数据; 以及（c）通过使用所述目标配置数据来更新所述目标系统的配置，其中所述微系统独立于所述目标系统。

95. 发明申请

US20070218541A1 Fermenter And Fermentation Method 审中-公开
标题翻译：发酵和发酵方法
公开(公告)号：US20070218541A1
公开(公告)日：2007-09-20
申请号：US11596661
申请日：2005-05-16
申请人： Larry Denney , Ying Zhou
发明人： Larry Denney , Ying Zhou
IPC分类号： C12G3/00
CPC分类号： C02F1/008 , C02F1/001 , C02F1/66 , C02F3/12 , C02F2103/20 , C02F2209/006 , Y02W10/15
摘要： A method is described for treating a biomaterial waste stream to remove pollutants and to generate a product. The method comprises the steps of injecting the biomaterial waste stream into a waste fermentation system, contacting the biomaterial waste stream with a microorganism, and subjecting the biomaterial waste stream to conditions conducive to aerobic fermentation of the biomaterial waste stream. The microorganism can be artificially flocculated, and the microorganism is the product generated from the method.
摘要翻译：描述了一种用于处理生物材料废物流以去除污染物并产生产物的方法。该方法包括以下步骤：将生物材料废物流注入废物发酵系统，使生物材料废物流与微生物接触，并使生物材料废物流经受有益于生物材料废物流的好氧发酵的条件。微生物可以被人工絮凝，微生物是从该方法产生的产物。

96. 发明申请

US20060273431A1 Interconnects having sealing structures to enable selective metal capping layers 有权
公开(公告)号：US20060273431A1
公开(公告)日：2006-12-07
申请号：US11144576
申请日：2005-06-03
申请人： Jun He , Kevin Fischer , Ying Zhou , Peter Moon
发明人： Jun He , Kevin Fischer , Ying Zhou , Peter Moon
IPC分类号： H01L23/52 , H01L21/469
CPC分类号： H01L21/76849 , H01L21/0217 , H01L21/02252 , H01L21/32053 , H01L21/76802 , H01L21/76834 , H01L21/76844 , H01L21/76856 , H01L21/76865 , H01L21/76877 , H01L21/76888 , H01L23/5283 , H01L23/53209 , H01L23/53228 , H01L23/53238 , H01L23/53266 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： Methods of fabricating a capped interconnect for a microelectronic device which includes a sealing feature for any gaps between a capping layer and an interconnect and structures formed therefrom. The sealing features improve encapsulation of the interconnect, which substantially reduces or prevents electromigration and/or diffusion of conductive material from the capped interconnect.

97. 发明授权

US07071129B2 Enhancing adhesion of silicon nitride films to carbon-containing oxide films 失效
标题翻译：提高氮化硅膜对含碳氧化膜的粘附性
公开(公告)号：US07071129B2
公开(公告)日：2006-07-04
申请号：US10242086
申请日：2002-09-12
申请人： Chia-Hong Jan , Tracey Scherban , Ying Zhou , Adam Schafer , Brett Robert Schroeder
发明人： Chia-Hong Jan , Tracey Scherban , Ying Zhou , Adam Schafer , Brett Robert Schroeder
IPC分类号： H01L21/26 , H01L21/324 , H01L21/31 , H01L23/48
CPC分类号： H01L21/02126 , H01L21/0217 , H01L21/022 , H01L21/0234 , H01L21/31633 , H01L21/3185 , H01L23/53295 , H01L2924/0002 , Y10S438/964 , H01L2924/00
摘要： Adhesion between silicon nitride etch-stop layers and carbon doped oxide films may be improved by using plasma argon densification treatments of the carbon doped oxide films. The resulting surface layer of the carbon doped oxide films may be carbon-depleted and may include a relatively rough interface to improve the adhesion of deposited silicon nitride films.
摘要翻译：通过使用掺杂碳的氧化物膜的等离子体氩致密化处理可以改善氮化硅蚀刻停止层和掺碳氧化物膜之间的粘合性。得到的碳掺杂氧化物膜的表面层可以是碳贫的，并且可以包括相对粗糙的界面以改善沉积的氮化硅膜的粘附性。

98. 发明申请

US20060045968A1 Atomic layer deposition of high quality high-k transition metal and rare earth oxides 审中-公开
标题翻译：原子层沉积的高品质高k过渡金属和稀土氧化物
公开(公告)号：US20060045968A1
公开(公告)日：2006-03-02
申请号：US10925573
申请日：2004-08-25
申请人： Matthew Metz , Mark Brazier , Timothy Glassman , Christopher Thomas , Lawrence Foley , Christopher Parker , Ying Zhou , Markus Kuhn , Suman Datta , Jack Kavalieros , Mark Doczy , Justin Brask , Robert Chau
发明人： Matthew Metz , Mark Brazier , Timothy Glassman , Christopher Thomas , Lawrence Foley , Christopher Parker , Ying Zhou , Markus Kuhn , Suman Datta , Jack Kavalieros , Mark Doczy , Justin Brask , Robert Chau
IPC分类号： C23C16/00
CPC分类号： C23C16/45527
摘要： Increasing the number of successive pulses of oxidant before applying pulses of metal precursor may improve the quality of the resulting metal or rare earth oxide films. These metal or rare earth oxide films may be utilized for high dielectric constant gate dielectrics. In addition, pulsing the oxidant during the pre-stabilization period may be advantageous. Also, using more pulses of oxidant than the pulses of precursor may reduce chlorine concentration in the resulting films.
摘要翻译：在施加金属前体的脉冲之前增加氧化剂的连续脉冲数可以提高所得金属或稀土氧化物膜的质量。这些金属或稀土氧化物膜可用于高介电常数栅极电介质。此外，在预稳定化期间脉冲氧化剂可能是有利的。此外，使用比前体脉冲更多的氧化剂脉冲可以降低所得膜中的氯浓度。

99. 发明授权

US06689675B1 Method for making a semiconductor device having a high-k gate dielectric 有权
标题翻译：制造具有高k栅极电介质的半导体器件的方法
公开(公告)号：US06689675B1
公开(公告)日：2004-02-10
申请号：US10285915
申请日：2002-10-31
申请人： Christopher G. Parker , Markus Kuhn , Ying Zhou
发明人： Christopher G. Parker , Markus Kuhn , Ying Zhou
IPC分类号： H01L213205
CPC分类号： H01L21/28194 , H01L29/517
摘要： A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate, oxidizing the surface of the high-k gate dielectric layer, and then forming a gate electrode on the oxidized high-k gate dielectric layer.
摘要翻译：描述制造半导体器件的方法。该方法包括在衬底上形成高k栅极电介质层，氧化高k栅极电介质层的表面，然后在氧化的高k栅极电介质层上形成栅电极。

100. 发明授权

US5688784A Method of suppressing appetite with vanadium complexes 失效
标题翻译：用钒络合物抑制食欲的方法
公开(公告)号：US5688784A
公开(公告)日：1997-11-18
申请号：US484970
申请日：1995-06-07
申请人： John Hugh McNeill , Hamid Reza Hoveyda , Chris Orvig , Ying Zhou , Jere Douglas Fellmann
发明人： John Hugh McNeill , Hamid Reza Hoveyda , Chris Orvig , Ying Zhou , Jere Douglas Fellmann
IPC分类号： A61K31/24 , A61K31/28 , A61K31/555 , A61K33/24
CPC分类号： A61K33/24 , A61K31/24 , A61K31/28 , A61K31/555 , Y10S514/884
摘要： There are provided vanadium compositions for use in the treatment of hypertension, obesity and diabetes, in particular improved oral compositions comprising oxovanadium (IV) chelates of monoprotic, bidentate oxygen, oxygen and oxygen, nitrogen coordinating ligands especially kojic acid and maltol.
摘要翻译：提供用于治疗高血压，肥胖症和糖尿病的钒组合物，特别是包含单酸，二齿氧，氧和氧的氧化钒（IV）螯合物，氮配位配体尤其是曲酸和麦芽酚的改进的口服组合物。

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