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91. 发明申请

US20200273774A1 REUSABLE HOLDING COMPONENT FOR HEATSINK 审中-公开
公开(公告)号：US20200273774A1
公开(公告)日：2020-08-27
申请号：US16593414
申请日：2019-10-04
申请人： Illinois Tool Works Inc.
发明人： Ming-Cheng Lin
IPC分类号： H01L23/40
摘要： A reusable holding component is provided. The reusable holding component may comprise a frame with a fastener receiving opening extending from a first surface of the frame to a second surface of the frame, and at least two pins disposed on and extending away from the second surface of the frame, wherein each of the at least two pins includes a head portion, at least one elongated segment connected to a portion of the head portion, and a hook disposed on the at least one elongated segment. A heat transfer device and an electronic device with a heatsink are also provided.

92. 发明授权

US10757842B2 Electrical power conversion apparatus 有权
公开(公告)号：US10757842B2
公开(公告)日：2020-08-25
申请号：US15975826
申请日：2018-05-10
申请人： DENSO CORPORATION
发明人： Kazuya Takeuchi
IPC分类号： H05K7/20 , H05K1/02 , H02M7/00 , H02M7/537 , H01L23/473 , H01L23/40
摘要： An electrical power conversion apparatus is provided which includes a semiconductor module and a plurality of cooling pipes. Each of the cooling pipes has an electrical conductivity and a cooling medium flow path formed therein. Each of the cooling pipes is equipped with a flow path extension forming portion which protrudes above a module body in at least one of height-wise directions and in which a portion of the cooling medium flow path is formed. The flow path extension forming portion overlaps at least either of the power terminals or the control terminals in a stacking direction of the cooling pipes. This enhances the efficiency in decreasing the inductance of the power terminals and/or the control terminals, improves the productivity of the electrical power conversion apparatus, and enables the size of the electrical power conversion apparatus to be reduced.

93. 发明授权

US10748836B2 Semiconductor laser module and method for manufacturing the same 有权
公开(公告)号：US10748836B2
公开(公告)日：2020-08-18
申请号：US16078192
申请日：2017-02-20
申请人： FUJIKURA LTD.
发明人： Yoshikazu Kaifuchi
IPC分类号： H01S5/022 , H01L23/40 , H01S5/024 , H01S5/026 , H01S5/042 , B23K1/00 , H01L23/36
摘要： The semiconductor laser module 1 has an electrically conductive heat sink 10, a submount 20 disposed above the heat sink 10, a semiconductor laser device 30 disposed above the submount 20, a lower solder layer 50 disposed between the heat sink 10 and the submount 20, and an upper solder layer 60 electrically connected to the semiconductor laser device 30 and the heat sink 10. This upper solder layer 60 has an electric resistivity lower than an electric resistivity of the submount 20 and extends along surfaces 21 and 22 of the submount 20 to the heat sink 10.

94. 发明授权

US10741505B2 Method of manufacturing semiconductor device and semiconductor device 有权
公开(公告)号：US10741505B2
公开(公告)日：2020-08-11
申请号：US16241624
申请日：2019-01-07
申请人： Toshiba Memory Corporation
发明人： Masaya Shima , Eiji Takano , Ippei Kume , Yuki Noda
IPC分类号： H01L23/00 , H01L25/00 , H01L21/768 , H01L21/78 , H01L25/065 , H01L23/48 , H01L23/31 , H01L23/40 , H01L21/67 , H01L21/822
摘要： A method of manufacturing a semiconductor device includes stacking a first substrate comprising a first surface having a semiconductor element and an opposing second surface and a second substrate comprising a third surface having a semiconductor element and an opposing fourth surface, forming a first contact hole extending from the second surface to the first surface of the first substrate and forming a first groove inwardly of a first region of the second surface of the first substrate by etching inwardly of the first substrate from the second surface thereof, forming a first patterned mask on the first substrate, so that the first groove is covered by the material of the first patterned mask, forming a first metal electrode in the first contact hole through an opening in the first mask as a mask, and removing the first mask and subsequently cutting through the first substrate in the first groove.

95. 发明授权

US10734297B2 Ag underlayer-attached metallic member, Ag underlayer-attached insulating circuit substrate,semiconductor device, heat sink-attached insulating circuit substrate, and method for manufacturing Ag underlayer-attached metallic member 有权
公开(公告)号：US10734297B2
公开(公告)日：2020-08-04
申请号：US16072660
申请日：2017-01-26
申请人： MITSUBISHI MATERIALS CORPORATION
发明人： Shuji Nishimoto , Yoshiyuki Nagatomo
IPC分类号： H05K1/02 , H05K1/18 , H05K3/30 , H01L23/14 , H01L21/48 , H01L23/00 , H01L23/488 , H01L23/40 , H01L23/08 , H01L23/15 , H01L23/373 , H01L23/473 , H05K1/03
摘要： An Ag underlayer-attached metallic member includes a metallic member joined with a body to be joined and an Ag underlayer formed on a joining surface of the metallic member with the body to be joined, the Ag underlayer includes a glass layer formed on a metallic member side and an Ag layer laminated on the glass layer, and an area proportion of voids in an Ag layer surface of the Ag underlayer is 25% or less.

96. 发明授权

US10727652B2 Switch assembly of reactive power compensation apparatus 有权
公开(公告)号：US10727652B2
公开(公告)日：2020-07-28
申请号：US16279521
申请日：2019-02-19
申请人： LSIS CO., LTD.
发明人： Teagsun Jung
IPC分类号： H02B1/04 , H02B1/56 , H05K7/20 , H01L23/473 , H02J3/18 , H02M7/00 , H01L23/40 , H01L25/11
摘要： A switch assembly of a reactive power compensation apparatus may include a first switching module having a first stack structure perpendicular to a supporting module, a second switching module having a second stack structure perpendicular to the supporting module, the second switching module being connected in parallel with the first switching module, and first and second supporting members disposed above and below the first and second switching modules.

97. 发明申请

US20200235030A1 SWITCHING SEMICONDUCTOR DEVICE AND COOLING APPARATUS THEREOF 审中-公开
公开(公告)号：US20200235030A1
公开(公告)日：2020-07-23
申请号：US16704466
申请日：2019-12-05
申请人： LG Electronics Inc.
发明人： Kyeonghwan KIM , Junho AHN
IPC分类号： H01L23/367 , H01L23/40 , H01L23/473
摘要： The present disclosure relates to a switching semiconductor device and a cooling apparatus thereof. The cooling apparatus of the switching semiconductor device of the present disclosure comprises a first heat dissipation plate configured to facilitate heat dissipation of a surface of the semiconductor device at an installation space, and a second heat dissipation plate disposed inside the installation space along a thickness direction of the first heat dissipation plate. The installation space is formed in a predetermined size at the surface of the semiconductor device, and the second heat dissipation plate is configured to contact the first heat dissipation plate so as to allow heat exchange. Accordingly, a heat dissipation area may be increased without increasing a size of the installation space.

98. 发明授权

US10721841B2 Heart dissipator structure 有权
公开(公告)号：US10721841B2
公开(公告)日：2020-07-21
申请号：US15196910
申请日：2016-06-29
申请人： Chia-Sheng Wu , Yu Qin Technology, Ltd
发明人： Chia-Sheng Wu
IPC分类号： H05K7/20 , H01L23/467 , H01L23/40
摘要： A heat dissipator structure includes a heat-dissipation base and a conductive metal block. The heat-dissipation base includes a substrate and a plurality of heat-dissipating fins disposed on the substrate. A receiving portion and a limit sliding block are disposed on the substrate, with the limit sliding block disposed on the receiving portion and movable within a restrictive interval. The conductive metal block includes a body portion, an assembling portion disposed beside the body portion, and a heat dissipation plane disposed on the body portion to face away from the assembling portion and be in contact with an electronic component, with the assembling portion disposed on the receiving portion, a positioning slot disposed on the assembling portion to hold the limit sliding block laterally and keep the heat dissipation plane flat, and at least one resilient unit disposed between the assembling portion plane and the receiving portion plane to provide resilient support to the conductive metal block.

99. 发明申请

US20200229318A1 ACTIVATE LOADING MECHANISM 审中-公开
公开(公告)号：US20200229318A1
公开(公告)日：2020-07-16
申请号：US16832576
申请日：2020-03-27
申请人： Intel Corporation
发明人： Iwan Ricardo Grau , Erich Nolan Ewy
IPC分类号： H05K7/20 , H01L23/40
摘要： Particular embodiments described herein provide for an electronic device that can be configured to enable an active loading mechanism. The electronic device can include a heat source, a heat sink over the heat source, and an active loading mechanism coupled to the heat sink, where the heat sink is thermally decoupled from the heat source when the active loading mechanism is not activated and the heat sink is thermally coupled to the heat source when the active loading mechanism is activated. In an example, the active loading mechanism includes shape memory material and the shape memory material is activated when a temperature of the heat source satisfies a threshold temperature.

100. 发明授权

US10707147B2 Clip for semiconductor package 有权
公开(公告)号：US10707147B2
公开(公告)日：2020-07-07
申请号：US16233518
申请日：2018-12-27
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Ariel Sotomayor Tan
IPC分类号： H01L23/495 , H01L23/40 , H01L23/00
摘要： Implementations of a clip may include a die attach portion including at least one protrusion extending from the die attach portion and a lead frame alignment portion including at least one alignment feature. The at least one alignment feature may be configured to couple into at least one hole in a lead frame thereby aligning the clip with the lead frame. The at least one protrusion may be configured to couple into at least one recess in the die.

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