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    • 91. 发明授权
    • High-speed level shifter with voltage swing protection
    • 具有电压摆幅保护功能的高速电平转换器
    • US09225317B1
    • 2015-12-29
    • US14580144
    • 2014-12-22
    • Sanjay K. WadhwaKulbhushan Misri
    • Sanjay K. WadhwaKulbhushan Misri
    • H03L5/00H03K3/356H03K19/003
    • H03K19/00315H03K19/018521
    • A level shifter operates using first and second input signals. When the first and second input signals are in respective first and second states, a first switching element is activated and an output node is pulled toward a first voltage, first pull-down protection and first pull-down switching elements are deactivated, a first protection node is connected to a first bias voltage, second pull-down protection and second pull-down switching elements are activated, and a second protection node is pulled to a second voltage. When the first and second input signals are in respective second and first states, the first switching element is deactivated, the first pull-down protection and first pull-down switching elements are activated, the output node and the first protection node are pulled toward the second voltage, the second pull-down protection and second pull-down switching elements are deactivated, and the second protection node is connected to the first bias voltage.
    • 电平移位器使用第一和第二输入信号进行操作。 当第一和第二输入信号处于相应的第一和第二状态时,第一开关元件被激活并且输出节点被拉向第一电压,第一下拉保护和第一下拉开关元件被去激活,第一保护 节点连接到第一偏置电压,第二下拉保护和第二下拉开关元件被激活,并且第二保护节点被拉到第二电压。 当第一和第二输入信号处于相应的第二和第一状态时,第一开关元件被去激活,第一下拉保护和第一下拉开关元件被激活,输出节点和第一保护节点被拉向 第二电压,第二下拉保护和第二下拉开关元件被去激活,并且第二保护节点连接到第一偏置电压。
    • 95. 发明授权
    • Ratioless near-threshold level translator
    • 无限近阈值电平转换器
    • US09209810B2
    • 2015-12-08
    • US14253930
    • 2014-04-16
    • Jacob T. WilliamsJeffrey C. CunninghamKarthik Ramanan
    • Jacob T. WilliamsJeffrey C. CunninghamKarthik Ramanan
    • H03L5/00H03K19/0185
    • H03K19/018528H03K19/018521
    • An output circuit, between a first power supply terminal and a second power supply terminal, receives a first logic signal that switches between a first logic state based on a voltage at the first power supply terminal and a second logic state based on a voltage at the second power supply terminal and provides a second logic signal, complementary to the first logic signal. A level translator is in a second power supply domain configured to have a second voltage differential between a third power supply terminal and a fourth power supply terminal, wherein the second voltage differential is greater than the first voltage differential. The level translator is designed so that it may be implemented using a subset of the transistors that have the shortest channel length and narrowest channel width.
    • 在第一电源端子和第二电源端子之间的输出电路接收基于第一电源端子处的电压的第一逻辑状态和基于第一电源端子处的电压的第二逻辑状态之间切换的第一逻辑信号 第二电源端子,并提供与第一逻辑信号互补的第二逻辑信号。 电平转换器处于被配置为在第三电源端子和第四电源端子之间具有第二电压差的第二电源域,其中第二电压差大于第一电压差。 电平转换器的设计使得可以使用具有最短沟道长度和最窄沟道宽度的晶体管的子集来实现。
    • 96. 发明授权
    • Level shifter
    • 电平移位器
    • US09197213B1
    • 2015-11-24
    • US14493742
    • 2014-09-23
    • Winbond Electronics Corp.
    • Chih-Feng Lin
    • H03L5/00H03K19/0185H03K5/02
    • H03K3/356113H03K5/023H03K19/0185
    • A level shifter includes a voltage converter having an input and an output coupled to a first node, a transistor coupled between a power node and a third node and having a gate coupled to the first node, a transistor coupled between a fourth node and a reference node and having a gate coupled to the first input node, a voltage converter having an input coupled to a second input node and an output coupled to a second node, a transistor coupled between the power node and the fourth node and having a gate coupled to a second node, a transistor coupled between the third node and the reference node and having a gate coupled to the second input node, a third inverter coupled between the third node and the fourth node and an fourth inverter coupled between the third node and the fourth node.
    • 电平移位器包括具有耦合到第一节点的输入和输出的电压转换器,耦合在功率节点和第三节点之间并且具有耦合到第一节点的栅极的晶体管,耦合在第四节点和参考点之间的晶体管 节点,并且具有耦合到第一输入节点的栅极,具有耦合到第二输入节点的输入和耦合到第二节点的输出的电压转换器,耦合在功率节点和第四节点之间的晶体管,并且具有耦合到 第二节点,耦合在所述第三节点和所述参考节点之间并且具有耦合到所述第二输入节点的栅极的晶体管,耦合在所述第三节点和所述第四节点之间的第三反相器以及耦合在所述第三节点和所述第四节点之间的第四反相器 节点。
    • 97. 发明授权
    • High-voltage level conversion circuit
    • 高压电平转换电路
    • US09190990B1
    • 2015-11-17
    • US14464741
    • 2014-08-21
    • ILI TECHNOLOGY CORP.
    • Hsi-En LiuSung-Yau Yeh
    • H03L5/00H03K5/02H03K19/0185
    • H03K3/356113H03K5/023H03K19/0185H03K19/018521
    • The present disclosure provides a high-voltage level conversion circuit at least comprising a first NMOS transistor, a first PMOS transistor, a second NMOS transistor, a second PMOS transistor, a third PMOS transistor, a third NMOS transistor, a fourth PMOS transistor and a fourth NMOS transistor for receiving an input signal have a first voltage level and a second voltage level and converting the input signal to an output signal having a third voltage level and a fourth voltage level. Compared to conventional high-voltage level conversion circuits the provided high-voltage level conversion circuit occupies less circuit area.
    • 本公开提供了一种高压电平转换电路,其至少包括第一NMOS晶体管,第一PMOS晶体管,第二NMOS晶体管,第二PMOS晶体管,第三PMOS晶体管,第三NMOS晶体管,第四PMOS晶体管和 用于接收输入信号的第四NMOS晶体管具有第一电压电平和第二电压电平,并将输入信号转换为具有第三电压电平和第四电压电平的输出信号。 与传统的高压电平转换电路相比,提供的高压电平转换电路占用较少的电路面积。
    • 98. 发明授权
    • Semiconductor device incorporating a power on circuit
    • 并联有电源电路的半导体器件
    • US09166601B2
    • 2015-10-20
    • US14036781
    • 2013-09-25
    • RENESAS ELECTRONICS CORPORATION
    • Yoshinori TokiokaSoichi KobayashiAkira Oizumi
    • H03K17/22H03L5/00
    • G06F1/3296G06F1/24G06F1/26G06F1/3203G06F1/3234H03K17/223H03L5/00Y02D10/172Y02D50/20
    • A semiconductor device which makes it possible to reduce a wasteful standby time at power-on is provided. In this semiconductor device, a reset of an internal circuit is canceled as described below. When a data signal stored in a storage section is at “0,” the reset is canceled by bringing an internal reset signal to the “H” level when a relatively short time has passed after the rising edge of a power on reset signal. When the data signal is at “1,” the reset is canceled by bringing the internal reset signal to the “H” level when a relatively long time has passed after the rising edge of the power on reset signal. Therefore, a wasteful standby time at power-on can be reduced by writing the data signal logically equivalent to the rise time of supply voltage to the storage section.
    • 提供一种能够减少上电时的浪费待机时间的半导体装置。 在该半导体器件中,内部电路的复位被消除,如下所述。 当存储在存储部分中的数据信号为“0”时,当在上电复位信号的上升沿之后经过相当短的时间时,通过使内部复位信号变为“H”电平来解除复位。 当数据信号为“1”时,在上电复位信号的上升沿过去相对较长的时间后,通过将内部复位信号置“H”电平来解除复位。 因此,通过将逻辑上等同于电源电压的上升时间的数据信号写入存储部分,可以减少上电浪费的待机时间。