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91. 发明申请

US20100075489A1 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PRODUCING APPARATUS 有权
标题翻译：用于生产半导体器件的方法和制造器件的半导体器件
公开(公告)号：US20100075489A1
公开(公告)日：2010-03-25
申请号：US12158906
申请日：2008-01-09
申请人： Yuichiro Sasaki , Katsumi Okashita , Keiichi Nakamoto , Hiroyuki Ito , Bunji Mizuno
发明人： Yuichiro Sasaki , Katsumi Okashita , Keiichi Nakamoto , Hiroyuki Ito , Bunji Mizuno
IPC分类号： H01L21/26 , C23C16/513
CPC分类号： H01L21/2236 , H01L29/6659 , H01L29/7833
摘要： A plasma of a gas containing an impurity is produced through a discharge in a vacuum chamber, and a plurality of substrates are successively doped with the impurity by using the plasma, wherein a plasma doping condition of a subject substrate is adjusted based on an accumulated discharge time until the subject substrate is placed in the vacuum chamber.
摘要翻译：通过在真空室中的放电产生含有杂质的气体的等离子体，并且通过使用等离子体使多个基板依次掺杂有杂质，其中基于累积放电来调整被检体基板的等离子体掺杂状态直到目标基板被放置在真空室中。

92. 发明申请

US20100062560A1 APPLICATION SPECIFIC SOLAR CELL AND METHOD FOR MANUFACTURE USING THIN FILM PHOTOVOLTAIC MATERIALS 有权
标题翻译：应用特定太阳能电池和使用薄膜光伏材料制造的方法
公开(公告)号：US20100062560A1
公开(公告)日：2010-03-11
申请号：US12509136
申请日：2009-07-24
申请人： Chester A. Farris, III , Albert S. Brown
发明人： Chester A. Farris, III , Albert S. Brown
IPC分类号： H01L21/26 , G06F17/00
CPC分类号： H01L27/1443 , H01L27/1446
摘要： A method for manufacture of application specific solar cells includes providing and processing custom design information to determine at least a cell size and a cell shape. The method includes providing a transparent substrate having a back surface region, a front surface region, and one or more grid-line regions overlying the front side surface region. The one or more grid regions provide one or more unit cells having the cell size and the cell shape. The method further includes forming a layered structure including photovoltaic materials overlying the front surface region. Additionally, the method includes aligning a laser beam from the back surface region to illuminate a first region within the one or more grid-line regions, subjecting a first portion of the layered structure overlying the first region to the laser beam to separate the first portion of the layered structure from the first region, and scanning the laser beam along the one or more grid-line regions to cause formation of one or more unit cells having the cell size and cell shape. The method further includes transferring the one or more unit cells.
摘要翻译：应用特定太阳能电池的制造方法包括提供和处理定制设计信息以确定至少单元尺寸和单元形状。该方法包括提供具有背表面区域，前表面区域和覆盖前侧表面区域的一个或多个栅格区域的透明基板。一个或多个栅格区域提供具有单元尺寸和单元形状的一个或多个单元单元。该方法还包括形成包括覆盖在前表面区域上的光伏材料的层状结构。此外，该方法包括对准来自后表面区域的激光束以照亮一个或多个格栅线区域内的第一区域，使覆盖第一区域的分层结构的第一部分经受激光束以分离第一部分并且沿着一个或多个栅格线区域扫描激光束以形成具有单元尺寸和单元形状的一个或多个单元电池。该方法还包括传送一个或多个单位单元。

93. 发明授权

US07670965B2 Production method for silicon wafers and silicon wafer 有权
标题翻译：硅晶片和硅晶片的生产方法
公开(公告)号：US07670965B2
公开(公告)日：2010-03-02
申请号：US11053440
申请日：2005-02-09
申请人： Yoshinobu Nakada , Hiroyuki Shiraki
发明人： Yoshinobu Nakada , Hiroyuki Shiraki
IPC分类号： H01L21/26 , H01L21/42 , H01L21/324 , H01L21/477 , H01L21/31
CPC分类号： H01L21/3225
摘要： A silicon wafer is thermal-annealed in an atmosphere to form new vacancies therein by thermal annealing and the atmosphere in the thermal annealing contains a nitride gas having a lower decomposition temperature than a decomposable temperature of N2 so that the thermal annealing is carried out at a lower temperature or for a short time to suppress generation of slip and to provide satisfactory surface roughness.
摘要翻译：将硅晶片在大气中热退火以通过热退火形成新的空位，并且热退火中的气氛含有分解温度低于N2的可分解温度的氮化物气体，使得热退火在较低的温度或短时间以抑制滑移的产生并提供令人满意的表面粗糙度。

94. 发明申请

US20100035371A1 Method for Fabricating Light Emitting Device 有权
标题翻译：制造发光装置的方法
公开(公告)号：US20100035371A1
公开(公告)日：2010-02-11
申请号：US12536069
申请日：2009-08-05
申请人： Shunpei Yamazaki , Koichiro Tanaka , Hisao Ikeda , Satoshi Seo
发明人： Shunpei Yamazaki , Koichiro Tanaka , Hisao Ikeda , Satoshi Seo
IPC分类号： H01L21/26
CPC分类号： H01L51/0009 , C23C14/048 , C23C14/12 , C23C14/28 , H01L51/0013 , H01L51/56
摘要： By using a first substrate which has a light-transmitting property and whose first face is provided with a light-absorbing layer, a mixture including an organic compound and an inorganic material is irradiated with light having a wavelength, which is absorbed by the inorganic material to heat the mixture, and thereby a film of the organic compound included in the mixture is formed on the first face of the first substrate. Then, the first face of the first substrate and a deposition surface of a second substrate are arranged to be adjacent to or in contact with each other, irradiation with light having a wavelength, which is absorbed by the light-absorbing layer is conducted from a second face side of the first substrate, to heat the organic compound, and thereby at least part of the organic compound is formed as a film on the deposition surface of the second substrate.
摘要翻译：通过使用具有透光性的第一基板，其第一面设置有光吸收层，将由有机化合物和无机材料构成的混合物照射由无机材料吸收的波长的光加热混合物，由此在第一基板的第一面上形成包含在混合物中的有机化合物的膜。然后，第一基板的第一面和第二基板的沉积表面被布置成彼此相邻或彼此接触，用由光吸收层吸收的具有波长的光的照射从第一基板的第二面侧，以加热有机化合物，由此至少部分有机化合物在第二基板的沉积表面上形成为膜。

95. 发明申请

US20100013036A1 Thin Sacrificial Masking Films for Protecting Semiconductors From Pulsed Laser Process 审中-公开
标题翻译：用于从脉冲激光工艺保护半导体的薄牺牲遮蔽膜
公开(公告)号：US20100013036A1
公开(公告)日：2010-01-21
申请号：US12173903
申请日：2008-07-16
申请人： James E. Carey
发明人： James E. Carey
IPC分类号： H01L31/09 , H01L21/26
CPC分类号： H01L21/268 , H01L27/14683 , H01L31/18
摘要： The present disclosure is directed to systems and methods for protecting a semiconductor product or material from harmful effects of pulsed laser irradiation. In some embodiments, a thin sacrificial protective mask layer that expires after one laser processing operation is applied to the surface of the product or material to be laser-treated. The thin protective mask layer reflects, absorbs, or otherwise protects the underlying product or material from the energy of the laser.
摘要翻译：本公开涉及用于保护半导体产品或材料免受脉冲激光照射的有害影响的系统和方法。在一些实施例中，在一个激光加工操作之后到期的薄牺牲保护掩模层被施加到待激光处理的产品或材料的表面上。薄的保护掩模层反射，吸收或以其他方式保护下面的产品或材料免受激光的能量。

96. 发明申请

US20100009548A1 METHOD FOR HEAT-TREATING SILICON WAFER 审中-公开
标题翻译：热处理硅砂的方法
公开(公告)号：US20100009548A1
公开(公告)日：2010-01-14
申请号：US12438786
申请日：2007-08-21
申请人： Kozo Nakamura , Seiichi Shimura , Tomoko Nakajima
发明人： Kozo Nakamura , Seiichi Shimura , Tomoko Nakajima
IPC分类号： H01L21/26
CPC分类号： H01L21/324 , H01L21/3225 , H01L21/67115
摘要： Provided is a heat treatment method wherein generation of slip dislocation in silicon wafer RTP is suppressed, in order to solve a problem of not sufficiently suppressing generation of slip dislocation of silicon wafers in conventional RTP. A step is provided for suspending temperature rising for 10 seconds or longer at a temperature in a range of over 700° C. to below 950° C., so as to prevent generation of slip dislocation during rapid heating, at least at a silicon wafer portion that contacts with a supporting section of a rapid heating apparatus or at a portion on the outermost circumference section of the silicon wafer.
摘要翻译：提供了一种热处理方法，其中抑制了硅晶片RTP中的滑移位错的产生，以解决在常规RTP中不能充分抑制硅晶片的滑移位错产生的问题。提供了一个步骤，用于在超过700℃至低于950℃的温度下将温度上升10秒或更长，以防止在快速加热期间产生滑移位错，至少在硅晶片与快速加热装置的支撑部分或硅晶片的最外周部分的部分接触的部分。

97. 发明申请

US20090311880A1 Method of Annealing Using Two Wavelengths of Continuous Wave Laser Radiation 有权
标题翻译：使用两个波长连续波激光辐射退火的方法
公开(公告)号：US20090311880A1
公开(公告)日：2009-12-17
申请号：US12546522
申请日：2009-08-24
申请人： Dean JENNINGS , Haifan LIANG , Mark YAM , Vijay PARIHAR , Abhilash J. MAYUR , Aaron HUNTER , Bruce ADAMS , Joseph Michael RANISH
发明人： Dean JENNINGS , Haifan LIANG , Mark YAM , Vijay PARIHAR , Abhilash J. MAYUR , Aaron HUNTER , Bruce ADAMS , Joseph Michael RANISH
IPC分类号： H01L21/26
CPC分类号： B23K26/0608 , B23K26/0604 , B23K26/0613 , B23K26/073 , B23K26/0732 , B23K26/0736 , B23K26/0738 , B23K26/352 , H01L21/02675 , H01L21/2026 , H01L21/268 , H01L21/324
摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
摘要翻译：例如，将发射为10.6μm的CO 2的第一激光源聚焦在作为线束的硅晶片上的第一激光源和例如在808nm发射的GaAs激光棒的第二激光源的热处理装置和方法是作为围绕线束的较大波束聚焦在晶片上。沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO2辐射的能量小于硅带隙能量，因此硅对其透明度不变，但长波长辐射被自由载流子吸收。

98. 发明申请

US20090286374A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090286374A1
公开(公告)日：2009-11-19
申请号：US12508888
申请日：2009-07-24
申请人： Shigeru MORI , Takahiro KORENARI , Tadahiro MATSUZAKI , Hiroshi TANABE
发明人： Shigeru MORI , Takahiro KORENARI , Tadahiro MATSUZAKI , Hiroshi TANABE
IPC分类号： H01L21/336 , H01L21/26 , H01L21/302
CPC分类号： H01L29/78621 , H01L29/66757
摘要： A base layer is formed on an insulating substrate, and a semiconductor layer is formed in localized fashion thereon. A gate insulating film is then formed so as to cover the semiconductor layer, and a gate electrode is formed on a portion of the gate insulating film. An impurity is then implanted into the semiconductor layer via the gate insulating film, and a source region, a drain region, and an LDD region are formed. The gate insulating film is etched with dilute hydrofluoric acid. An electrode-protecting insulating film is then formed so as to cover the gate electrode, and the entire surface of the surface layer portion of the electrode-protecting insulating film is etched away using dilute hydrofluoric acid. Carrier traps introduced into the electrode-protecting insulating film and the gate insulating film are thereby removed.
摘要翻译：在绝缘基板上形成基底层，以局部方式形成半导体层。然后形成栅极绝缘膜以覆盖半导体层，并且栅极电极形成在栅极绝缘膜的一部分上。然后通过栅极绝缘膜将杂质注入到半导体层中，形成源极区，漏极区和LDD区。用稀氢氟酸蚀刻栅极绝缘膜。然后形成电极保护绝缘膜以覆盖栅电极，并且使用稀氢氟酸腐蚀掉电极保护绝缘膜的表面层部分的整个表面。因此，引入到电极保护绝缘膜和栅极绝缘膜中的载流子阱被去除。

99. 发明申请

US20090267162A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US20090267162A1
公开(公告)日：2009-10-29
申请号：US12403780
申请日：2009-03-13
申请人： Kazuaki Nakajima
发明人： Kazuaki Nakajima
IPC分类号： H01L29/78 , H01L21/28 , H01L21/26
CPC分类号： H01L21/28194 , H01L21/28088 , H01L21/28176 , H01L21/823807 , H01L21/823842 , H01L21/823857 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/6659 , H01L29/7833
摘要： A method of manufacturing a semiconductor device comprises: forming a gate insulator on a substrate, the gate insulator including a high-dielectric film in whole or part; forming a first metal film on the gate insulator; forming a second metal film on the first metal film; and forming a reaction film between the gate insulator and the first metal film by letting the high-dielectric film and the first metal film react with each other through a thermal treatment.
摘要翻译：一种制造半导体器件的方法包括：在衬底上形成栅绝缘体，所述栅极绝缘体全部或部分包括高电介质膜; 在栅极绝缘体上形成第一金属膜; 在所述第一金属膜上形成第二金属膜; 以及通过使高电介质膜和第一金属膜通过热处理而彼此反应，在栅极绝缘体和第一金属膜之间形成反应膜。

100. 发明授权

US07605063B2 Photoresist stripping chamber and methods of etching photoresist on substrates 有权
标题翻译：光刻胶剥离室和在基材上蚀刻光致抗蚀剂的方法
公开(公告)号：US07605063B2
公开(公告)日：2009-10-20
申请号：US11431104
申请日：2006-05-10
申请人： Robert P. Chebi , Jaroslaw W. Winniczek , Alan J. Miller , Gladys S. Lo
发明人： Robert P. Chebi , Jaroslaw W. Winniczek , Alan J. Miller , Gladys S. Lo
IPC分类号： H01L21/26 , B44C1/22 , C03C15/00
CPC分类号： H01L21/31138 , H01J37/321 , H01J2237/3342
摘要： Methods of processing a substrate so as to protect an active area include positioning a substrate in an inductively coupled plasma processing chamber, supplying process gas to the chamber, generating plasma from the process gas and processing the substrate so as to protect the active area by maintaining a plasma potential of about 5 to 15 volts at the substrate surface and/or passivating the active area by using a siliane-free process gas including at least one additive effective to form a protective layer on the active area of the substrate wherein the protective layer includes at least one element from the additive which is already present in the active area.
摘要翻译：处理衬底以保护有源区域的方法包括将衬底定位在电感耦合等离子体处理室中，将工艺气体供应到腔室，从处理气体产生等离子体并处理衬底，以通过保持来保护有源区域在衬底表面上具有约5至15伏特的等离子体电位和/或通过使用包含至少一种在衬底的有源区上形成保护层的至少一种添加剂的无硅衬底工艺气体来钝化活性区域，其中保护层包括已经存在于活性区域中的来自添加剂的至少一种元素。

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