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    • 13. 发明授权
    • Semiconductor light-emitting device
    • 半导体发光装置
    • US08330181B2
    • 2012-12-11
    • US12452059
    • 2008-05-14
    • Nobuaki MatsuiAtsushi Yamaguchi
    • Nobuaki MatsuiAtsushi Yamaguchi
    • H01L33/00
    • H01L33/38H01L33/405H01L33/46
    • A semiconductor light-emitting device capable of increasing an amount of light irradiated to the outside is provided.A semiconductor light-emitting device (1) includes a substrate (2), an n-type semiconductor layer (3), a light-emitting layer (4), a p-type semiconductor layer (5), an n-side pad electrode (6), an n-side pad electrode (7), a p-side electrode (8), a reflecting layer (9), and a p-side pad electrode (10). The n-side pad electrode (7) is electrically connected to the n-type semiconductor layer (3) via the n-side pad electrode (6). The p-side pad electrode (10) is electrically connected to the p-type semiconductor layer (5) via the p-side electrode (8). A connection surface (7a) of the n-side pad electrode (7) connected to the n-type semiconductor layer (3) is arranged in a first area (Ar1) closer to a short side (2b) on an arrow B direction-side, and a connection surface (10a) of the p-side pad electrode (10) connected to the p-type semiconductor layer (5) is arranged in a fourth area (Ar4) closest to a short side (2b) on an arrow A direction-side among the first area (Ar1) to the fourth area (Ar4) formed by equally dividing the substrate (2) into four.
    • 提供能够增加照射到外部的光量的半导体发光装置。 半导体发光器件(1)包括衬底(2),n型半导体层(3),发光层(4),p型半导体层(5),n侧衬垫 电极(6),n侧焊盘电极(7),p侧电极(8),反射层(9)和p侧焊盘电极(10)。 n侧焊盘电极(7)经由n侧焊盘电极(6)与n型半导体层(3)电连接。 p侧焊盘电极(10)经由p侧电极(8)与p型半导体层(5)电连接。 与n型半导体层(3)连接的n侧焊盘电极(7)的连接面(7a)配置在靠近箭头B方向的短边(2b)的第一区域(Ar1) 并且连接到p型半导体层(5)的p侧焊盘电极(10)的连接表面(10a)被布置在最靠近短边(2b)的箭头的第四区域(Ar4)中 在通过将基板(2)等分成四个而形成的第一区域(Ar1)至第四区域(Ar4)中的方向侧。
    • 18. 发明申请
    • SOUND PRESSURE PREDICTION APPARATUS, SOUND PRESSURE PREDICTION METHOD, AND INFORMATION STORAGE MEDIUM
    • 声压预测装置,声压预测方法和信息存储介质
    • US20120063606A1
    • 2012-03-15
    • US13227175
    • 2011-09-07
    • Hiroyuki FuruyaAtsushi YamaguchiKazuhiro Nitta
    • Hiroyuki FuruyaAtsushi YamaguchiKazuhiro Nitta
    • H04R29/00
    • G01H3/14
    • A sound pressure level prediction apparatus includes a storage unit for storing measured sound pressure levels. The sound pressure level prediction apparatus also includes an acquisition unit configured to acquire sound pressure levels measured at a plurality of locations for a first fan and at least one sound pressure level for a second fan, and the at least one sound pressure level being measured at the same location as at least one of the plurality of locations used for measuring the sound pressure levels for the first fan. The sound pressure level prediction apparatus further includes a prediction unit configured to predict, based on the acquired sound pressure levels of the first fan and the at least one sound pressure level for the second fan, a sound pressure level for the second fan at a location where the sound pressure level for the second fan has not yet been measured.
    • 声压级预测装置包括用于存储测量的声压级的存储单元。 声压级预测装置还包括获取单元,其被配置为获取在第一风扇的多个位置处测量的声压级和用于第二风扇的至少一个声压级,并且至少一个声压级在 与用于测量第一风扇的声压级的多个位置中的至少一个位置相同的位置。 声压级预测装置还包括预测单元,其被配置为基于所获取的第一风扇的声压级和第二风扇的至少一个声压级来预测在位置处的第二风扇的声压级 其中第二风扇的声压级尚未被测量。
    • 19. 发明申请
    • Nitride semiconductor device
    • 氮化物半导体器件
    • US20110272665A1
    • 2011-11-10
    • US13067042
    • 2011-05-04
    • Atsushi YamaguchiNorikazu ItoShinya Takado
    • Atsushi YamaguchiNorikazu ItoShinya Takado
    • H01L29/15
    • H01L29/155H01L21/02381H01L21/02458H01L21/02507H01L21/0254H01L29/2003H01L29/452H01L29/475H01L29/66462H01L29/7787
    • An inventive nitride semiconductor device includes: a substrate; a first buffer layer provided on the substrate, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; a second buffer layer provided on the first buffer layer in contact with the first buffer layer, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; and a device operation layer of a Group III nitride semiconductor provided on the second buffer layer; wherein an average lattice constant LC1 of the first buffer layer, an average lattice constant LC2 of the second buffer layer and an average lattice constant LC3 of the device operation layer satisfy the following expression (1): LC1
    • 本发明的氮化物半导体器件包括:衬底; 设置在基板上的第一缓冲层,具有超晶格结构,其包括具有不同组成的两种类型的III族氮化物半导体子层,并成对地交替堆叠; 设置在与第一缓冲层接触的第一缓冲层上的第二缓冲层,并且具有超晶格结构,其包括具有不同组成的两种类型的III族氮化物半导体子层,并成对地堆叠; 以及设置在所述第二缓冲层上的第III族氮化物半导体的器件工作层; 其中第一缓冲层的平均晶格常数LC1,第二缓冲层的平均晶格常数LC2和器件工作层的平均晶格常数LC3满足下式(1):LC1