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1. 发明授权

US08405064B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US08405064B2
公开(公告)日：2013-03-26
申请号：US13067042
申请日：2011-05-04
申请人： Atsushi Yamaguchi , Norikazu Ito , Shinya Takado
发明人： Atsushi Yamaguchi , Norikazu Ito , Shinya Takado
IPC分类号： H01L29/06
CPC分类号： H01L29/155 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L29/2003 , H01L29/452 , H01L29/475 , H01L29/66462 , H01L29/7787
摘要： An inventive nitride semiconductor device includes: a substrate; a first buffer layer provided on the substrate, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; a second buffer layer provided on the first buffer layer in contact with the first buffer layer, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; and a device operation layer of a Group III nitride semiconductor provided on the second buffer layer; wherein an average lattice constant LC1 of the first buffer layer, an average lattice constant LC2 of the second buffer layer and an average lattice constant LC3 of the device operation layer satisfy the following expression (1): LC1
摘要翻译：本发明的氮化物半导体器件包括：衬底; 设置在基板上的第一缓冲层，具有超晶格结构，其包括具有不同组成的两种类型的III族氮化物半导体子层，并成对地交替堆叠; 设置在与第一缓冲层接触的第一缓冲层上的第二缓冲层，并且具有超晶格结构，其包括具有不同组成的两种类型的III族氮化物半导体子层，并成对地堆叠; 以及设置在所述第二缓冲层上的第III族氮化物半导体的器件工作层; 其中第一缓冲层的平均晶格常数LC1，第二缓冲层的平均晶格常数LC2和器件工作层的平均晶格常数LC3满足下式（1）：LC1

2. 发明申请

US20110272665A1 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20110272665A1
公开(公告)日：2011-11-10
申请号：US13067042
申请日：2011-05-04
申请人： Atsushi Yamaguchi , Norikazu Ito , Shinya Takado
发明人： Atsushi Yamaguchi , Norikazu Ito , Shinya Takado
IPC分类号： H01L29/15
CPC分类号： H01L29/155 , H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L29/2003 , H01L29/452 , H01L29/475 , H01L29/66462 , H01L29/7787
摘要： An inventive nitride semiconductor device includes: a substrate; a first buffer layer provided on the substrate, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; a second buffer layer provided on the first buffer layer in contact with the first buffer layer, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; and a device operation layer of a Group III nitride semiconductor provided on the second buffer layer; wherein an average lattice constant LC1 of the first buffer layer, an average lattice constant LC2 of the second buffer layer and an average lattice constant LC3 of the device operation layer satisfy the following expression (1): LC1
摘要翻译：本发明的氮化物半导体器件包括：衬底; 设置在基板上的第一缓冲层，具有超晶格结构，其包括具有不同组成的两种类型的III族氮化物半导体子层，并成对地交替堆叠; 设置在与第一缓冲层接触的第一缓冲层上的第二缓冲层，并且具有超晶格结构，其包括具有不同组成的两种类型的III族氮化物半导体子层，并成对地堆叠; 以及设置在所述第二缓冲层上的第III族氮化物半导体的器件工作层; 其中第一缓冲层的平均晶格常数LC1，第二缓冲层的平均晶格常数LC2和器件工作层的平均晶格常数LC3满足下式（1）：LC1

3. 发明授权

US09257548B2 Nitride semiconductor element and nitride semiconductor package 有权
标题翻译：氮化物半导体元件和氮化物半导体封装
公开(公告)号：US09257548B2
公开(公告)日：2016-02-09
申请号：US13297141
申请日：2011-11-15
申请人： Shinya Takado , Norikazu Ito , Atsushi Yamaguchi
发明人： Shinya Takado , Norikazu Ito , Atsushi Yamaguchi
IPC分类号： H01L29/06 , H01L29/778 , H01L29/417 , H01L29/423 , H01L29/20 , H01L23/00
CPC分类号： H01L21/02458 , H01L21/02381 , H01L21/02433 , H01L21/02499 , H01L21/02505 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/4825 , H01L21/565 , H01L23/3114 , H01L23/4952 , H01L23/49562 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L29/045 , H01L29/154 , H01L29/2003 , H01L29/205 , H01L29/41758 , H01L29/42316 , H01L29/66462 , H01L29/7784 , H01L29/7787 , H01L2224/06051 , H01L2224/451 , H01L2224/48247 , H01L2224/48257 , H01L2224/49111 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/12032 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A nitride semiconductor element includes a Si substrate; a buffer layer including (a) an AlN layer formed on a primary surface of the Si substrate; and (b) an AlGaN deposit layer formed by laminating multiple AlGaN layers on the AlN layer and having a total thickness ranging from 100 nm to 500 nm; a GaN electron transfer layer formed on the AlGaN deposit layer and having a thickness ranging from 500 nm to 2000 nm provided that the GaN electron transfer layer is thicker than the AlGaN deposit layer; and an AlGaN electron supply layer formed on the GaN electron transfer layer, wherein the AlGaN deposit layer includes an AlGaN layer that is provided closer to the AlN layer and has an Al component that ranges from about 40% to about 60%, and a reference AlGaN layer that has an Al component (%) that is lower than that of the AlGaN layer.
摘要翻译：氮化物半导体元件包括Si衬底; 缓冲层，包括（a）形成在所述Si衬底的主表面上的AlN层; 和（b）通过在AlN层上层叠多个AlGaN层并且具有100nm至500nm的总厚度而形成的AlGaN沉积层; 形成在AlGaN沉积层上并且具有500nm至2000nm的厚度的GaN电子转移层，条件是GaN电子转移层比AlGaN沉积层厚; 以及形成在GaN电子转移层上的AlGaN电子供给层，其中AlGaN沉积层包括设置在更靠近AlN层并具有约40％至约60％范围内的Al成分的AlGaN层，以及参考 AlGaN层的Al成分（％）低于AlGaN层的Al成分。

4. 发明申请

US20120119219A1 NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR PACKAGE 有权
标题翻译： NITRIDE半导体元件和氮化物半导体封装
公开(公告)号：US20120119219A1
公开(公告)日：2012-05-17
申请号：US13297141
申请日：2011-11-15
申请人： Shinya Takado , Norikazu Ito , Atsushi Yamaguchi
发明人： Shinya Takado , Norikazu Ito , Atsushi Yamaguchi
IPC分类号： H01L29/20
CPC分类号： H01L21/02458 , H01L21/02381 , H01L21/02433 , H01L21/02499 , H01L21/02505 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/4825 , H01L21/565 , H01L23/3114 , H01L23/4952 , H01L23/49562 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L29/045 , H01L29/154 , H01L29/2003 , H01L29/205 , H01L29/41758 , H01L29/42316 , H01L29/66462 , H01L29/7784 , H01L29/7787 , H01L2224/06051 , H01L2224/451 , H01L2224/48247 , H01L2224/48257 , H01L2224/49111 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/12032 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A nitride semiconductor element capable of accommodating GaN electron transfer layers of a wide range of thickness, so as to allow greater freedom of device design, and a nitride semiconductor element package with excellent voltage tolerance performance and reliability are provided. On a substrate (41), a buffer layer (44) including an AlN layer (47), a first AlGaN layer (48) (with an average Al component of 50%) and a second AlGaN layer (49) (with an average Al component of 20%) is formed. On the buffer layer (44), an element action layer including a GaN electron transfer layer (45) and an AlGaN electron supply layer (46) is formed. Thus, an HEMT element (3) is constituted.
摘要翻译：提供能够容纳宽范围厚度的GaN电子转移层，以便允许更大的器件设计自由度的氮化物半导体元件和具有优异的耐压性能和可靠性的氮化物半导体元件封装。在衬底（41）上，包括AlN层（47），第一AlGaN层（48）（平均Al成分为50％）和第二AlGaN层（49）（平均值）的缓冲层（44） Al成分为20％）。在缓冲层（44）上，形成包括GaN电子转移层（45）和AlGaN电子供给层（46）的元素作用层。因此，构成HEMT元件（3）。

5. 发明申请

US20090206357A1 Semiconductor Light Emitting Device 审中-公开
标题翻译：半导体发光装置
公开(公告)号：US20090206357A1
公开(公告)日：2009-08-20
申请号：US11884456
申请日：2006-02-15
申请人： Norikazu Ito , Kazuaki Tsutsumi , Toshio Nishida , Masayuki Sonobe , Mitsuhiko Sakai , Atsushi Yamaguchi
发明人： Norikazu Ito , Kazuaki Tsutsumi , Toshio Nishida , Masayuki Sonobe , Mitsuhiko Sakai , Atsushi Yamaguchi
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20
摘要： There is provided a nitride semiconductor light emitting device in which a semiconductor layer is not broken easily even when a reverse voltage is applied or even in long time operation, and excellent reliability is obtained, by preventing semiconductor layers from deterioration when manufacturing a device. On a surface of a substrate (1), a semiconductor lamination portion (6) made of nitride semiconductor, including a first conductivity type layer (p-type layer (5)) and a second conductivity type layer (n-type layer (3)), is formed, a p-side electrode (8) is provided through a light transmitting conductive layer (7) thereon electrically connected to the p-type layer (5), and an n-side electrode (9) is provided electrically connected to the n-type layer (3) of the lower layer side of the semiconductor lamination portion(6). A mesa-like semiconductor lamination portion (6a) is formed by removing a part of the semiconductor lamination portion (6) around a chip by etching, and the mesa-like semiconductor lamination portion (6a) is formed such that a corner part having an angle of 90 degrees or less is rounded and has a curved line in a plan shape, thereby not to have an angle of 90 degrees or less on corner parts.
摘要翻译：提供了一种氮化物半导体发光器件，其中即使当施加反向电压或者甚至长时间操作时，半导体层也不容易损坏，并且通过在制造器件时防止半导体层劣化，可以获得优异的可靠性。在基板（1）的表面上，由氮化物半导体构成的包括第一导电型层（p型层（5））和第二导电型层（n型层（3））的半导体层叠部（6））），通过其上与p型层（5）电连接的透光导电层（7）设置p侧电极（8），并且n侧电极（9）电气地连接到半导体层叠部分（6）的下层侧的n型层（3）。通过蚀刻去除芯片周围的半导体层叠部分（6）的一部分形成台面状半导体层叠部（6a），并且形成台面状半导体层叠部（6a），使得具有 90度以下的角度是圆形的，并且具有平面形状的曲线，从而在角部不具有90度或更小的角度。

6. 发明授权

US09197126B2 Power converting apparatus 有权
标题翻译：电力转换装置
公开(公告)号：US09197126B2
公开(公告)日：2015-11-24
申请号：US13258055
申请日：2009-04-01
申请人： Masaki Yamada , Takahiro Urakabe , Akihiko Iwata , Norikazu Ito
发明人： Masaki Yamada , Takahiro Urakabe , Akihiko Iwata , Norikazu Ito
IPC分类号： H02M3/335 , H02M1/42
CPC分类号： H02M1/4225 , H02M1/4208 , Y02B70/126
摘要： In a power converting apparatus which converts AC power into DC power, an inverter circuit including at least one series-connected single-phase inverter is connected in a downstream of a stage in which an AC input is rectified in series therewith. In the downstream stage of the inverter circuit, there are provided a smoothing capacitor connected via a rectifier diode and a short-circuiting switch for bypassing the smoothing capacitor. The short-circuiting switch is set to an ON state only in each of short-circuiting phase ranges of which midpoint matches each of zero-crossing phases and an output of the inverter circuit is controlled by using a current command so that a DC voltage of the smoothing capacitor follows a target voltage and an input power factor is improved.
摘要翻译：在将AC电力转换为DC电力的电力转换装置中，包括至少一个串联连接的单相逆变器的逆变器电路在与其串联整流的级的下游连接。在逆变器电路的下游侧，设置有通过整流二极管连接的平滑电容器和用于旁路平滑电容器的短路开关。短路开关仅在其中点与每个过零相位匹配的短路相位范围中的每一个中被设置为导通状态，并且通过使用电流指令来控制逆变器电路的输出，使得直流电压平滑电容器跟随目标电压，并且改善输入功率因数。

7. 发明授权

US08884560B2 Inverter device and air conditioner including the same 有权
标题翻译：变频器和空调包括相同的
公开(公告)号：US08884560B2
公开(公告)日：2014-11-11
申请号：US13604892
申请日：2012-09-06
申请人： Norikazu Ito
发明人： Norikazu Ito
IPC分类号： H02P6/14
CPC分类号： H02M5/297 , H02M1/088 , H02M2001/0048 , H03K17/127 , H03K17/163 , H03K2217/0036 , Y02B70/1491
摘要： An inverter device includes a plurality of switching circuits in which first switching elements including Si semiconductors and second switching element including WBG semiconductors having ON resistance smaller than that of the first switching elements and having switching speed higher than that of the first switching elements are connected in parallel. The inverter device includes a converting circuit that converts a direct-current voltage into a desired alternating-current voltage and a driving unit that generates a plurality of driving signals for respectively turning on and off the switching circuits. The inverter device includes, for each of the switching circuits, a gate circuit that, based on the driving signals, turns on the second switching element later than the first switching element and turns off the first switching element later than the second switching element.
摘要翻译：逆变器装置包括多个开关电路，其中包括Si半导体的第一开关元件和包括具有比第一开关元件的导通电阻小的开关速度的开关速度高于第一开关元件的开关速度的WBG半导体的第二开关元件连接在平行。逆变器装置包括将直流电压转换成期望的交流电压的转换电路和产生用于分别导通和关断开关电路的多个驱动信号的驱动单元。对于每个开关电路，逆变器装置包括基于驱动信号的第二开关元件比第一开关元件晚的导通，并且使第一开关元件比第二开关元件晚的截止的栅极电路。

8. 发明授权

US08093606B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US08093606B2
公开(公告)日：2012-01-10
申请号：US12085564
申请日：2006-11-28
申请人： Masayuki Sonobe , Norikazu Ito , Mitsuhiko Sakai
发明人： Masayuki Sonobe , Norikazu Ito , Mitsuhiko Sakai
IPC分类号： H01L33/00
CPC分类号： H01S5/18358 , B82Y20/00 , H01L33/105 , H01L33/32 , H01S5/34333
摘要： There is provided a nitride semiconductor light emitting device having a light reflection layer capable of preventing reflectivity from lowering and luminance from lowering due to deterioration of quality of an active layer. A nitride semiconductor laser includes at least a light emitting layer forming portion (3) provided on a first light reflection layer (2) provided on a substrate (1). The first light reflection layer (2) is formed with laminating a low refractivity layer (21) and a high refractivity layer (22) which have a different refractivity from each other, and the low refractivity layer (21) of the first light reflection layer is formed with a single layer structure of an AlxGa1−xN layer (0≦x≦1), and the high refractivity layer (22) of the first light reflection layer is formed with a multi layer structure formed by laminating alternately an AlyGa1−yN layer (0≦y≦0.5 and y
摘要翻译：提供一种氮化物半导体发光器件，其具有能够防止由于有源层的质量劣化而引起的反射率降低和降低亮度的光反射层。氮化物半导体激光器至少包括设置在设置在基板（1）上的第一光反射层（2）上的发光层形成部（3）。第一光反射层（2）形成为具有彼此不同的折射率的低折射率层（21）和高折射率层（22），并且第一光反射层的低折射率层（21）形成有Al x Ga 1-x N层（0＆amp; nlE; x＆nlE; 1）的单层结构，并且第一光反射层的高折射率层（22）形成有多层结构，其通过交替层叠AlyGa1-yN 层（0＆amp; nlE; y＆nlE; 0.5和y n1; 1和t

9. 发明申请

US20100035410A1 Method for Manufacturing InGaN 审中-公开
标题翻译：制造InGaN的方法
公开(公告)号：US20100035410A1
公开(公告)日：2010-02-11
申请号：US12086418
申请日：2006-12-07
申请人： Masayuki Sonobe , Norikazu Ito , Kazuaki Tsutsumi , Tetsuya Fujiwara , Shinichi Tamai
发明人： Masayuki Sonobe , Norikazu Ito , Kazuaki Tsutsumi , Tetsuya Fujiwara , Shinichi Tamai
IPC分类号： H01L21/20
CPC分类号： C23C16/303 , C30B25/02 , C30B29/403 , H01L21/0242 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： To provide a method for manufacturing InGaN which causes less segregation of In and achieves high crystallinity of an InGaN layer with the proportion of In increased.The method for manufacturing an InGaN layer including growing an InGaN layer under conditions of a growth temperature of 700 to 790° C., a growth rate of 30 to 93 Å/min, and a flow rate of trimethylindium of 0.882×10−5 to 3.53×10−5 mol/min.
摘要翻译：提供一种制造InGaN的方法，其使In的偏析较少，并且In增加的InGaN层的结晶度达到高结晶度。 InGaN层的制造方法，包括在生长温度为700〜790℃，生长速度为30〜93 /分钟，三甲基铟的流量为0.882×10 -5〜3.53的条件下生长InGaN层 x 10 -5 mol / min。

10. 发明申请

US20090272992A1 Semiconductor Light-Emitting Device and Process for Producing the Same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20090272992A1
公开(公告)日：2009-11-05
申请号：US12223739
申请日：2007-02-08
申请人： Kazuaki Tsutsumi , Norikazu Ito , Masayuki Sonobe , Shinichi Tamai
发明人： Kazuaki Tsutsumi , Norikazu Ito , Masayuki Sonobe , Shinichi Tamai
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254 , H01L21/0262
摘要： A semiconductor light emitting device of the present invention includes a substrate (1), an n-GaN layer (2) supported by the substrate (1), a p-GaN layer (7) which is located farther from the substrate (1) than the n-GaN layer (2) is, an active layer (4) formed between the n-GaN layer (2) and the p-GaN layer (7) and containing InGaN, a sublimation preventing layer (5) formed between the active layer (4) and the p-GaN layer (7) and containing InGaN, and an In composition gradient layer (6) sandwiched between the sublimation preventing layer (5) and the p-GaN layer (7) and having such In composition ratio gradient that the In composition ratio decreases in the thickness direction toward the p-GaN layer (7).
摘要翻译：本发明的半导体发光器件包括：衬底（1），由衬底（1）支撑的n-GaN层（2），位于离衬底（1）更远的p-GaN层（7）在n-GaN层（2）中，形成在n-GaN层（2）和p-GaN层（7）之间并含有InGaN的有源层（4），形成在该GaN衬底之间的升华防止层（5）有源层（4）和p-GaN层（7）并且包含InGaN，以及夹在升华防止层（5）和p-GaN层（7）之间的In组成梯度层（6），并且具有这样的In组成 In组成比在厚度方向朝向p-GaN层（7）减小的比率梯度。

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