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11. 发明申请

US20100197089A1 METHODS OF FABRICATING SEMICONDUCTOR DEVICES WITH METAL-SEMICONDUCTOR COMPOUND SOURCE/DRAIN CONTACT REGIONS 审中-公开
标题翻译：用金属半导体复合源/漏极接触区制造半导体器件的方法
公开(公告)号：US20100197089A1
公开(公告)日：2010-08-05
申请号：US12699491
申请日：2010-02-03
申请人： Jin-Bum Kim , Yu-Gyun Shin , Jung-Yun Won , In-Sun Jung , Jun-Ho Lee
发明人： Jin-Bum Kim , Yu-Gyun Shin , Jung-Yun Won , In-Sun Jung , Jun-Ho Lee
IPC分类号： H01L21/8238
CPC分类号： H01L21/823814 , H01L21/28518 , H01L21/28525 , H01L21/2855 , H01L21/32053 , H01L21/76814 , H01L21/76838 , H01L21/76843 , H01L21/76855 , H01L21/76897 , H01L21/823871 , H01L23/53238 , H01L23/53266 , H01L29/665 , H01L29/66636 , H01L2924/0002 , H01L2924/00
摘要： Methods of fabricating semiconductor devices include forming a transistor on and/or in a semiconductor substrate, wherein the transistor includes a source/drain region and a gate pattern disposed on a channel region adjacent the source/drain region. An insulating layer is formed on the transistor and patterned to expose the source/drain region. A semiconductor source layer is formed on the exposed source/drain region and on an adjacent portion of the insulating layer. A metal source layer is formed on the semiconductor source layer. Annealing, is performed to form a first metal-semiconductor compound region on the source/drain region and a second metal-semiconductor compound region on the adjacent portion of the insulating layer. The first metal-semiconductor compound region may be thicker than the second metal-semiconductor compound region. The metal source layer may include a metal layer and a metal nitride barrier layer.
摘要翻译：制造半导体器件的方法包括在半导体衬底上和/或半导体衬底中形成晶体管，其中晶体管包括源极/漏极区域和设置在与源极/漏极区域相邻的沟道区域上的栅极图案。在晶体管上形成绝缘层并图案化以暴露源/漏区域。在暴露的源极/漏极区域和绝缘层的相邻部分上形成半导体源极层。在半导体源层上形成金属源层。进行退火以在源极/漏极区域上形成第一金属 - 半导体化合物区域和在绝缘层的相邻部分上形成第二金属 - 半导体化合物区域。第一金属 - 半导体化合物区域可以比第二金属 - 半导体化合物区域厚。金属源层可以包括金属层和金属氮化物阻挡层。

12. 发明申请

US20080136080A1 IMAGE FORMING APPARATUS 有权
标题翻译：图像形成装置
公开(公告)号：US20080136080A1
公开(公告)日：2008-06-12
申请号：US11869152
申请日：2007-10-09
申请人： Jung Yun WON
发明人： Jung Yun WON
IPC分类号： B41F21/00
CPC分类号： G03G15/6508 , G03G2215/00383 , G03G2215/00396
摘要： An image forming apparatus includes a structure to lift or lower a paper loading tray without a separate drive source while preventing damage to constituent elements even under an abnormal situation in that excessive force is transmitted to the paper loading tray. The image forming apparatus includes a paper feeding cassette including a paper loading tray and a lifting member to lift or lower the paper loading tray, the paper feeding cassette being detachably coupled to the body, a power intermittence device to intermit power to be transmitted from a drive source provided in a body of the image forming apparatus to the lifting member, and a power transmission device to transmit the power transmitted through the power intermittence device to the lifting member by use of at least one worm gear. The image forming apparatus further includes a safety lever having one end to cooperate with a pickup roller assembly. The other end of the safety lever is pivotally rotatable between a first position where the other end of the safety lever restrains the power intermittence device so as not to transmit power to the lifting member and a second position where the other end of the safety lever is spaced apart from the power intermittence device so as to transmit the power to the lifting member.
摘要翻译：图像形成装置包括：即使在过大的力传递到纸张装载盘的异常情况下，也可以在不分离驱动源的情况下提升或降低纸张装载盘的结构，同时防止构成元件的损坏。图像形成装置包括：供纸盒，其包括纸张装载盘和用于提升或降低纸张装载盘的提升构件，所述供纸盒可拆卸地联接到主体;动力间歇装置，用于中断从一个设置在图像形成装置的主体中的驱动源到提升构件，以及动力传递装置，通过使用至少一个蜗轮将通过动力间歇装置传递的动力传递到提升构件。图像形成装置还包括具有与拾取辊组件配合的一端的安全杆。安全杆的另一端在安全杆的另一端限制动力间歇装置的第一位置和第二位置之间可枢转地转动，以便不向提升构件传递动力，而第二位置则安全杆的另一端为与动力间歇装置隔开，以将动力传递到提升构件。

13. 发明授权

US09284157B2 Image forming apparatus capable of duplex printing 有权
标题翻译：能够进行双面打印的图像形成装置
公开(公告)号：US09284157B2
公开(公告)日：2016-03-15
申请号：US12923440
申请日：2010-09-21
申请人： Jung-yun Won
发明人： Jung-yun Won
IPC分类号： G03G15/00 , B65H85/00 , G03G15/23
CPC分类号： B65H85/00 , G03G15/234 , G03G15/6552
摘要： A duplex-printable image forming apparatus which is capable of increasing a speed of duplex printing. The image forming apparatus includes: a developing unit which forms a visible image, which is formed of a developer, on a printing medium; a fixing unit which fixes the visible image formed on the printing medium onto the printing medium; a discharging roller unit which can be regularly/reversely rotated such that the printing medium passed through the fixing unit is conveyed to the developing unit along a duplex printing path or is discharged out of the apparatus; and an intermediate conveying unit which is interposed between the fixing unit and the discharging roller unit and selectively holds the printing medium.
摘要翻译：能够提高双面打印速度的双面打印图像形成装置。图像形成装置包括：显影单元，其在打印介质上形成由显影剂形成的可见图像; 固定单元，其将形成在打印介质上的可见图像固定到打印介质上; 排出辊单元，其可以规则地/反向旋转，使得通过定影单元的打印介质沿着双面打印路径被传送到显影单元，或者从设备中排出; 以及介于所述定影单元和所述排出辊单元之间并且选择性地保持所述打印介质的中间输送单元。

14. 发明申请

US20120231605A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING A RECESSED CHANNEL 有权
标题翻译：制造包含通道的半导体器件的方法
公开(公告)号：US20120231605A1
公开(公告)日：2012-09-13
申请号：US13312176
申请日：2011-12-06
申请人： Young-Pil KIM , Hyung-Ik Lee , Woo-Sung Jeon , Ki-Hong Kim , Jung-Yun Won , In-Sun Jung
发明人： Young-Pil KIM , Hyung-Ik Lee , Woo-Sung Jeon , Ki-Hong Kim , Jung-Yun Won , In-Sun Jung
IPC分类号： H01L21/762
CPC分类号： H01L27/1052 , H01L21/76224 , H01L27/10876
摘要： A method including forming an isolation trench; forming first and second liners on the isolation trench; filling the isolation trench an insulating material to form an isolation region and an active region; forming a preliminary gate trench including a first region across the isolation region to expose the first liner, the second liner, and the insulating material, and a second region across the active region to expose a portion of the substrate, the first region having a first sidewall with a planar shape, and the second region having a second sidewall with a concave central area such that an interface between the first and second regions has a pointed portion; removing a portion of the first liner exposed by the first region to form a dent having a first depth by which the pointed portion protrudes; removing the pointed portion to form a gate trench; and forming a gate electrode.
摘要翻译：一种包括形成隔离沟槽的方法; 在隔离沟槽上形成第一和第二衬垫; 将绝缘沟槽填充绝缘材料以形成隔离区域和有源区域; 形成包括隔离区域的第一区域的初步栅极沟槽，以露出第一衬垫，第二衬垫和绝缘材料，以及横跨有源区域的第二区域以暴露衬底的一部分，第一区域具有第一侧壁具有平面形状，并且所述第二区域具有第二侧壁，所述第二侧壁具有凹形中心区域，使得所述第一和第二区域之间的界面具有尖锐部分; 去除由所述第一区域暴露的所述第一衬垫的一部分以形成具有所述尖部突出的第一深度的凹陷; 去除尖部以形成栅沟; 并形成栅电极。

15. 发明申请

US20120048356A1 DOPING PASTE, SOLAR CELL, AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：喷粉，太阳能电池及其制造方法
公开(公告)号：US20120048356A1
公开(公告)日：2012-03-01
申请号：US13037071
申请日：2011-02-28
申请人： Sang-Soo JEE , Eun-Sung LEE , Se-Yun KIM , Vladimir URAZAEV , Jung Yun WON , Mi-Jeong SONG
发明人： Sang-Soo JEE , Eun-Sung LEE , Se-Yun KIM , Vladimir URAZAEV , Jung Yun WON , Mi-Jeong SONG
IPC分类号： H01L31/02 , H01B1/04 , H01B1/02 , H01L31/18
CPC分类号： H01B1/24 , H01L31/068 , H01L31/0682 , Y02E10/547
摘要： A doping paste includes an inorganic particle including a phosphorus-containing silicon compound and an organic vehicle, wherein a concentration of phosphorus at an interior portion of the inorganic particle is greater than a concentration of phosphorous at a surface of the inorganic particle.
摘要翻译：掺杂糊剂包括含有磷化合物和有机载体的无机颗粒，其中无机颗粒内部的磷浓度大于无机颗粒表面的磷浓度。

16. 发明申请

US20120031481A1 CONDUCTIVE PASTE AND ELECTRONIC DEVICE AND SOLAR CELL INCLUDING AN ELECTRODE FORMED USING THE CONDUCTIVE PASTE 有权
标题翻译：导电胶浆和电子装置和太阳能电池，其中包括使用导电胶制成的电极
公开(公告)号：US20120031481A1
公开(公告)日：2012-02-09
申请号：US13016403
申请日：2011-01-28
申请人： Sang-Soo JEE , Eun-Sung LEE , Se-Yun KIM , Sang-Mock LEE , Jung Yun WON , Do-Hyang KIM
发明人： Sang-Soo JEE , Eun-Sung LEE , Se-Yun KIM , Sang-Mock LEE , Jung Yun WON , Do-Hyang KIM
IPC分类号： H01L31/0224 , H01B1/22
CPC分类号： H01L31/022425 , H01B1/22 , H01L31/068 , H05K1/095 , Y02E10/547
摘要： A conductive paste including a conductive powder, a metallic glass having a supercooled liquid region, and an organic vehicle.
摘要翻译：包括导电粉末，具有过冷液体区域的金属玻璃和有机载体的导电浆料。

17. 发明申请

US20110073941A1 Semiconductor Devices Including Elevated Source and Drain Regions 有权
标题翻译：包括高压源和排水区的半导体器件
公开(公告)号：US20110073941A1
公开(公告)日：2011-03-31
申请号：US12962061
申请日：2010-12-07
申请人： Jin Bum Kim , Young-Pil Kim , Jung-Yun Won , Hion-Suck Baik , Jun-Ho Lee
发明人： Jin Bum Kim , Young-Pil Kim , Jung-Yun Won , Hion-Suck Baik , Jun-Ho Lee
IPC分类号： H01L27/088
CPC分类号： H01L21/823456 , H01L21/823418 , H01L27/1052 , H01L27/10876 , H01L27/10894 , H01L29/4236 , H01L29/66621
摘要： Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided.
摘要翻译：提供制造半导体器件的方法。制备具有活性图案和隔离层图案的基板。每个隔离层图案的上表面高于每个活动图案的上表面。在基板上形成具有均匀厚度的间隔层。蚀刻间隔层以在每个隔离层图案的侧壁上形成间隔物。在每个有源图案上形成栅极结构。对具有栅极结构的有源图案进行选择性外延生长（SEG）处理，以在活性图案上形成具有高于绝缘层图案的上表面的隔离的外延层。还提供了相关的半导体器件。

18. 发明申请

US20080309004A1 PAPER SUPPLY APPARATUS FOR A PRINTING DEVICE 有权
标题翻译：用于打印设备的纸张供应装置
公开(公告)号：US20080309004A1
公开(公告)日：2008-12-18
申请号：US11971336
申请日：2008-01-09
申请人： Jung-yun Won
发明人： Jung-yun Won
IPC分类号： B65H1/08 , B60W10/02
CPC分类号： G03G15/6511 , G03G15/5004 , G03G2215/00396
摘要： A paper supply apparatus to supply paper to printing devices such as printers or copiers. The paper supply apparatus includes a knock-up plate on which papers are stacked, a pick-up roller that feeds the papers into the printing device by picking up the papers stacked on the knock-up plate, a lifter that lifts the knock-up plate so that the papers stacked on the knock-up plate continuously contact with the pick-up roller, a motor for driving apparatuses in the printing device, a spring clutch that connects the motor to the lifter to transmit power, and a brake lever that selectively transmits power according to height variations of the pick-up roller via the spring clutch. In the paper supply apparatus, since the knock-up plate can be lifted using the power of the motor that is used for driving other apparatuses of the printing device, an exclusive motor for supplying paper is unnecessary, thereby reducing the number of parts and power consumption.
摘要翻译：供纸设备，用于向打印机或复印机等打印设备供纸。供纸装置包括堆叠纸张的打击板，拾取辊，通过拾取堆叠在打击板上的纸张将纸张馈送到打印装置中，提升器将升降机提升使得堆叠在敲击板上的纸张与拾取辊持续接触，用于在打印装置中驱动装置的电动机，将电动机连接到升降器以传递动力的弹簧离合器，以及制动杆，根据拾取辊的弹簧离合器的高度变化选择性地传递动力。在供纸装置中，由于可以使用用于驱动打印装置的其他装置的电动机的动力来提升压板，因此不需要用于供纸的专用电动机，从而减少零件数量和功率消费。

19. 发明申请

US20080105899A1 SEMICONDUCTOR DEVICE WITH EPITAXIALLY GROWN LAYER AND FABRICATION METHOD 审中-公开
标题翻译：具有外延层的半导体器件和制造方法
公开(公告)号：US20080105899A1
公开(公告)日：2008-05-08
申请号：US11858288
申请日：2007-09-20
申请人： Young-pil KIM , Jin-bum KIM , Jun-ho LEE , Jung-yun WON , In-sun JUNG
发明人： Young-pil KIM , Jin-bum KIM , Jun-ho LEE , Jung-yun WON , In-sun JUNG
IPC分类号： H01L29/778 , H01L21/336
CPC分类号： H01L21/26513 , H01L29/66575 , H01L29/66628 , H01L29/78
摘要： A fabrication method and a related semiconductor device are disclosed. The method includes; forming a gate structure on a semiconductor substrate, the gate structure comprising a stacked combination a gate dielectric pattern, a gate, a capping layer pattern and an epitaxial blocking layer pattern, forming sidewall spacers on the gate structure covering at least sidewall portions of the gate dielectric pattern, the gate, and the capping layer pattern, wherein the epitaxial blocking layer pattern is exposed on a top surface of the gate structure, forming an elevated epitaxial layer on the semiconductor substrate outside the gate structure using a selective epitaxial growth process, and forming elevated source/drain regions by applying an ion implantation process to the semiconductor substrate following formation of the elevated epitaxial layer, wherein the epitaxial blocking layer is a nitrogen enhanced layer relative to the capping layer pattern.
摘要翻译：公开了一种制造方法和相关的半导体器件。该方法包括：在半导体衬底上形成栅极结构，所述栅极结构包括层叠组合栅极电介质图案，栅极，覆盖层图案和外延阻挡层图案，在所述栅极结构上形成至少覆盖所述栅极的侧壁部分的侧壁间隔物电介质图案，栅极和覆盖层图案，其中外延阻挡层图案暴露在栅极结构的顶表面上，使用选择性外延生长工艺在栅极结构外部的半导体衬底上形成升高的外延层，以及通过在形成升高的外延层之后对半导体衬底施加离子注入工艺来形成升高的源/漏区，其中外延阻挡层相对于覆盖层图案是氮增强层。

20. 发明授权

US08552494B2 Semiconductor devices including elevated source and drain regions 有权
标题翻译：半导体器件包括升高的源极和漏极区域
公开(公告)号：US08552494B2
公开(公告)日：2013-10-08
申请号：US12962061
申请日：2010-12-07
申请人： Jin-Bum Kim , Young-Pil Kim , Jung-Yun Won , Hion-Suck Baik , Jun-Ho Lee
发明人： Jin-Bum Kim , Young-Pil Kim , Jung-Yun Won , Hion-Suck Baik , Jun-Ho Lee
IPC分类号： H01L27/088
CPC分类号： H01L21/823456 , H01L21/823418 , H01L27/1052 , H01L27/10876 , H01L27/10894 , H01L29/4236 , H01L29/66621
摘要： Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided.
摘要翻译：提供制造半导体器件的方法。制备具有活性图案和隔离层图案的基板。每个隔离层图案的上表面高于每个活动图案的上表面。在基板上形成具有均匀厚度的间隔层。蚀刻间隔层以在每个隔离层图案的侧壁上形成间隔物。在每个有源图案上形成栅极结构。对具有栅极结构的有源图案进行选择性外延生长（SEG）处理，以在活性图案上形成具有高于绝缘层图案的上表面的隔离的外延层。还提供了相关的半导体器件。

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