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11. 发明申请

US20070281003A1 Polymer-Based Films and Drug Delivery Systems Made Therefrom 审中-公开
标题翻译：基于聚合物的薄膜和药物输送系统
公开(公告)号：US20070281003A1
公开(公告)日：2007-12-06
申请号：US11674223
申请日：2007-02-13
申请人： Richard Fuisz , Joseph Fuisz , Garry Myers , Robert Yang , Pradeep Sanghvi
发明人： Richard Fuisz , Joseph Fuisz , Garry Myers , Robert Yang , Pradeep Sanghvi
IPC分类号： A61K9/70
CPC分类号： B29C39/003 , A61J3/00 , A61J2200/20 , A61K9/006 , A61K9/7007 , B29C39/14 , B29C71/02 , F26B13/104
摘要： The invention relates to the film products and methods of their preparation that demonstrate a non-self-aggregating uniform heterogeneity. Desirably, the films disintegrate in water and may be formed by a controlled drying process, or other process that maintains the required uniformity of the film. The films contain a polymer component which includes polyethylene oxide, optionally blended with at least one additional polymer. The films may alternatively contain a polymer component which includes polyvinyl alcohol, optionally blended with at least one additional polymer. The films also may contain a pharmaceutical and/or cosmetic active agent.
摘要翻译：本发明涉及其制备的薄膜产品及其制备方法，其表现出非自聚集均匀的异质性。期望地，膜在水中分解并且可以通过受控的干燥过程或保持膜所需的均匀性的其它方法形成。膜包含聚合物组分，其包括聚环氧乙烷，任选地与至少一种另外的聚合物共混。膜可以备选地包含聚合物组分，其包括聚乙烯醇，任选地与至少一种另外的聚合物共混。膜也可以含有药物和/或美容活性剂。

12. 发明申请

US20070069416A1 Thin film with non-self-aggregating uniform heterogeneity and drug delivery systems made therefrom 审中-公开
标题翻译：具有非自聚集均匀异质性的薄膜和由其制成的药物递送系统
公开(公告)号：US20070069416A1
公开(公告)日：2007-03-29
申请号：US11473356
申请日：2006-06-22
申请人： Robert Yang , Richard Fuisz , Gary Myers , Joseph Fuisz
发明人： Robert Yang , Richard Fuisz , Gary Myers , Joseph Fuisz
IPC分类号： B29C37/00 , B29D7/00
CPC分类号： A61K9/7007 , A61K9/0056 , A61K9/006 , A61K9/1635 , A61K9/1652 , A61K9/7015 , A61K31/192 , A61K31/422 , A61K31/435 , A61K31/4525 , A61K31/4545 , A61K31/80 , A61K47/02 , A61K47/10 , A61K47/22 , A61K47/32 , A61K47/38 , A61K47/44 , A61K47/46 , C08J5/18
摘要： The invention relates to the film products and methods of their preparation that demonstrate a non-self-aggregating uniform heterogeneity. Desirably the films disintegrate in water and may be formed by a controlled drying process, or other process that maintains the required uniformity of the film.
摘要翻译：本发明涉及其制备的薄膜产品及其制备方法，其表现出非自聚集均匀的异质性。理想地，膜在水中分解，并且可以通过受控的干燥过程或保持膜所需均匀性的其它方法形成。

13. 发明申请

US20070262398A1 High voltage semiconductor device with lateral series capacitive structure 有权
标题翻译：具有横向串联电容结构的高压半导体器件
公开(公告)号：US20070262398A1
公开(公告)日：2007-11-15
申请号：US11801819
申请日：2007-05-10
申请人： Mohamed Darwish , Robert Yang
发明人： Mohamed Darwish , Robert Yang
IPC分类号： H01L29/76
CPC分类号： H01L29/7835 , H01L29/0634 , H01L29/0692 , H01L29/407 , H01L29/66659
摘要： According to the present invention, semiconductor device breakdown voltage can be increased by embedding field shaping regions within a drift region of the semiconductor device. A controllable current path extends between two device terminals on the top surface of a planar substrate, and the controllable current path includes the drift region. Each field shaping region includes two or more electrically conductive regions that are electrically insulated from each other, and which are capacitively coupled to each other to form a voltage divider dividing a potential between the first and second terminals. One or more of the electrically conductive regions are isolated from any external electrical contact. Such field shaping regions can provide enhanced electric field uniformity in current-carrying parts of the drift region, thereby increasing device breakdown voltage.
摘要翻译：根据本发明，可以通过在半导体器件的漂移区域内嵌入场成形区域来增加半导体器件击穿电压。可控电流路径在平面基板的顶表面上的两个器件端子之间延伸，并且可控电流路径包括漂移区域。每个场整形区域包括彼此电绝缘并且彼此电容耦合以形成分压第一和第二端子之间的电势的分压器的两个或更多个导电区域。一个或多个导电区域与任何外部电触点隔离。这种场成形区域可以在漂移区域的载流部分中提供增强的电场均匀性，从而增加器件击穿电压。

14. 发明申请

US20060267044A1 DMOS transistor with a poly-filled deep trench for improved performance 失效
标题翻译： DMOS晶体管具有多填充深沟槽，以提高性能
公开(公告)号：US20060267044A1
公开(公告)日：2006-11-30
申请号：US11234519
申请日：2005-09-23
申请人： Robert Yang
发明人： Robert Yang
IPC分类号： H01L29/74
CPC分类号： H01L29/407 , H01L29/0696 , H01L29/0878 , H01L29/1087 , H01L29/1095 , H01L29/42368 , H01L29/7816 , H01L29/7823
摘要： Floating trenches are arranged in the layout of a single DMOS transistor or an array of DMOS transistors, the array forming a single power transistor. The trenches run perpendicular to the gate width direction either outside the transistor(s) or between rows of the transistors. The floating trenches are at a potential between the drain voltage and the substrate voltage (usually ground). The potentials of the opposing trenches cause merging depletion regions under the gate in the drift region. This merging shapes the field lines so as to increase the breakdown voltage of the transistor and provide other advantages. The technique is applicable to both lateral and vertical DMOS transistors.
摘要翻译：浮动沟槽布置在单个DMOS晶体管或DMOS晶体管阵列的布局中，该阵列形成单个功率晶体管。沟槽在晶体管的外部或晶体管的行之间垂直于栅极宽度方向延伸。浮动沟槽处于漏极电压和衬底电压（通常为接地）之间的电位。相对的沟槽的电位导致在漂移区域中的栅极下方的合并耗尽区域。这种合并形成场线，以增加晶体管的击穿电压并提供其它优点。该技术适用于横向和垂直DMOS晶体管。

15. 发明申请

US20060255401A1 Increasing breakdown voltage in semiconductor devices with vertical series capacitive structures 审中-公开
标题翻译：增加具有垂直串联电容结构的半导体器件中的击穿电压
公开(公告)号：US20060255401A1
公开(公告)日：2006-11-16
申请号：US11202523
申请日：2005-08-11
申请人： Robert Yang , Francois Hebert
发明人： Robert Yang , Francois Hebert
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L29/7802 , H01L29/407 , H01L29/4236 , H01L29/7395 , H01L29/74 , H01L29/7803 , H01L29/7811 , H01L29/7813 , H01L29/861
摘要： This invention relates to an apparatus and method for achieving high breakdown voltage and low on-resistance in semiconductor devices that have top, intermediate and bottom regions with a controllable current path traversing any of these regions. The device has an insulating trench that is coextensive with the top and intermediate regions and girds these regions from at least one side and preferably from both or all sides. A series capacitive structure with a biased top element and a number of floating elements is disposed in the insulating trench, and the intermediate region is endowed with a capacitive property that is chosen to establish a capacitive interaction or coupling between the series capacitive structure and the intermediate region so that the breakdown voltage VBD is maximized and on-resistance is minimized. The capacitive property of the intermediate region is established by an appropriately chosen material constitution and is further controlled by a predetermined constitution of the insulating trench. The apparatus and method of invention are useful in any number of semiconductor devices including, among other, transistors, bipolar transistors, MOSFETs, JFETs, thyristors and diodes.
摘要翻译：本发明涉及一种用于实现半导体器件中的高击穿电压和低导通电阻的装置和方法，所述半导体器件具有穿过任何这些区域的可控电流路径的顶部，中间和底部区域。该装置具有与顶部和中间区域共同延伸的绝缘沟槽，并且从至少一个侧面，优选地从两侧或全部侧面将这些区域线化。具有偏置顶部元件和多个浮动元件的串联电容结构设置在绝缘沟槽中，并且中间区域具有被选择用于建立串联电容结构和中间体之间的电容性相互作用或耦合的电容性质区域，使得击穿电压V BAT最大化，导通电阻最小化。通过适当选择的材料结构建立中间区域的电容性质，并通过绝缘沟槽的预定结构进一步控制。本发明的装置和方法可用于任何数量的半导体器件，其中包括晶体管，双极晶体管，MOSFET，JFET，晶闸管和二极管。

16. 发明授权

US07339049B1 Polymorphisms in human mitochondrial DNA 失效
标题翻译：人类线粒体DNA多态性
公开(公告)号：US07339049B1
公开(公告)日：2008-03-04
申请号：US08856376
申请日：1997-05-14
申请人： Mark Chee , Anthony Berno , Robert Yang
发明人： Mark Chee , Anthony Berno , Robert Yang
IPC分类号： C07H21/04 , C07H21/02 , C12Q1/68 , C12N1/20 , C12N15/00 , C12N5/02
CPC分类号： C12Q1/6827 , C12Q2565/501 , C12Q2535/131
摘要： The invention provides novel human mitochondrial polymorphisms, and probes and primers for detecting the same. Detection of such polymorphisms is useful in a variety of fields such as forensic analysis, epidemiology and preventive medicine.
摘要翻译：本发明提供新的人线粒体多态性，探针和引物用于检测它们。这种多态性的检测在法医分析，流行病学和预防医学等多个领域都是有用的。

17. 发明申请

US20060160181A1 Fibroblast Growth Factor-23 molecules and uses thereof 审中-公开
标题翻译：成纤维细胞生长因子-23分子及其用途
公开(公告)号：US20060160181A1
公开(公告)日：2006-07-20
申请号：US11238035
申请日：2005-09-28
申请人： Roland Luethy , Robert Yang , Sidney Suggs , Iidiko Sarosi
发明人： Roland Luethy , Robert Yang , Sidney Suggs , Iidiko Sarosi
IPC分类号： C12P21/06 , C07H21/04 , C07K14/50
CPC分类号： C07K14/50
摘要： The present invention provides Fibroblast Growth Factor-23 (FGF-23) polypeptides and nucleic acid molecules encoding the same. The invention also provides selective binding agents, vectors, host cells, and methods for producing FGF-23 polypeptides. The invention further provides pharmaceutical compositions and methods for the diagnosis, treatment, amelioration, and/or prevention of diseases, disorders, and conditions associated with FGF-23 polypeptides.
摘要翻译：本发明提供成纤维细胞生长因子-23（FGF-23）多肽和编码该多肽的核酸分子。本发明还提供选择性结合剂，载体，宿主细胞和用于产生FGF-23多肽的方法。本发明还提供用于诊断，治疗，改善和/或预防与FGF-23多肽相关的疾病，病症和病症的药物组合物和方法。

18. 发明申请

US20050184427A1 Thin film with non-self-aggregating uniform heterogeneity and drug delivery systems made therefrom 审中-公开
标题翻译：具有非自聚集均匀异质性的薄膜和由其制成的药物递送系统
公开(公告)号：US20050184427A1
公开(公告)日：2005-08-25
申请号：US11092217
申请日：2005-03-29
申请人： Robert Yang , Richard Fuisz , Gary Myers , Joseph Fuisz
发明人： Robert Yang , Richard Fuisz , Gary Myers , Joseph Fuisz
IPC分类号： A61K9/00 , A61K9/16 , A61K9/70 , A61K45/00 , A61K47/32 , A61K47/34 , A61K47/36 , A61K47/38 , A61K47/42 , A61P1/04 , A61P11/10 , A61P11/14 , A61P25/04 , A61P25/16 , A61P29/00 , A61P31/04 , A61P37/08 , B29C67/20
CPC分类号： A61K9/7007 , A61K9/0056 , A61K9/006 , A61K9/1635 , A61K9/1652 , A61K9/7015 , A61K31/192 , A61K31/422 , A61K31/435 , A61K31/4525 , A61K31/4545 , A61K31/80 , A61K47/02 , A61K47/10 , A61K47/22 , A61K47/32 , A61K47/38 , A61K47/44 , A61K47/46 , C08J5/18
摘要： The invention relates to the film products and methods of their preparation that demonstrate a non-self-aggregating uniform heterogeneity. Desirably the films disintegrate in water and may be formed by a controlled drying process, or other process that maintains the required uniformity of the film.
摘要翻译：本发明涉及其制备的薄膜产品及其制备方法，其表现出非自聚集均匀的异质性。理想地，膜在水中分解，并且可以通过受控的干燥过程或保持膜所需均匀性的其它方法形成。

19. 发明授权

US6099321A Low profile zero insertion force socket 失效
标题翻译：低调零插入力插座
公开(公告)号：US6099321A
公开(公告)日：2000-08-08
申请号：US146998
申请日：1998-09-04
申请人： Robert G. McHugh , Nick Lin , Robert Yang
发明人： Robert G. McHugh , Nick Lin , Robert Yang
IPC分类号： H01R13/193 , H05K7/10 , H01R4/50
CPC分类号： H01R13/193 , H05K7/1007
摘要： A zero insertion force socket for connecting a CPU to a printed circuit board consists of a dielectric base receiving a number of contacts therein, and a cover movably mounted on the base between a closed position and an open position. At the open position, pins of the CPU extending through the cover into the base are each received in a space defined within an arc section of the corresponding contact. At the closed position, each pin is moved to be clamped between fixed and movable contacting sections of the corresponding contact. The movable contacting section connects with the fixed contacting section via the arc section providing the clamping force. Each fixed contacting section connects with a tail portion located therebelow for being soldered to the printed circuit board.
摘要翻译：用于将CPU连接到印刷电路板的零插入力插座由在其中容纳多个触点的电介质基座和可移动地安装在基座上的关闭位置和打开位置之间的盖组成。在打开位置，通过盖延伸到基座中的CPU的引脚分别接收在相应触点的弧形部分内限定的空间中。在关闭位置，每个销被移动以夹紧在相应接触件的固定和可动接触部分之间。可动接触部通过提供夹紧力的电弧部与固定接触部连接。每个固定接触部分与位于其下方的尾部连接以焊接到印刷电路板。

20. 发明授权

US08404838B2 Inhibitors of tyrosine kinase receptor dimerization 有权
公开(公告)号：US08404838B2
公开(公告)日：2013-03-26
申请号：US13157472
申请日：2011-06-10
申请人： Garland R. Marshall , Linda J. Pike , Robert Yang
发明人： Garland R. Marshall , Linda J. Pike , Robert Yang
IPC分类号： C07D473/00
CPC分类号： C07D241/38 , C07D241/46 , C07D401/06 , C07D409/06 , C07D473/24 , C07D487/04 , C40B30/02 , G06F19/16 , G06F19/706
摘要： The teachings relate to methods of identifying inhibitors of dimerization of tyrosine receptor kinases such as EGFR. The methods comprise providing, on a digital computer, a molecular model comprising a complex of extracellular dimerization domains of an RTK, docking a chemical databases to the molecular model, scoring the compounds comprised by the database, and identifying one or more high-scoring compounds. The methods further comprise testing a compound for RTK inhibitory activity in vitro, and testing a compound for specificity as an RTK inhibitor. Also disclosed are compounds selected by the described methods, and methods of treatment using the compounds. Two compounds (NSC11241 and NSC56452) are disclosed that inhibit EGF receptor kinase activation in a dose-dependent manner.

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