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1. 发明申请

US20090269846A1 Inhibitors of tyrosine kinase receptor dimerization 审中-公开
标题翻译：抑制酪氨酸激酶受体二聚化
公开(公告)号：US20090269846A1
公开(公告)日：2009-10-29
申请号：US12384511
申请日：2009-04-06
申请人： Garland R. Marshall , Linda J. Pike , Robert Yang
发明人： Garland R. Marshall , Linda J. Pike , Robert Yang
IPC分类号： C12N5/06 , G06G7/58 , C07D241/02 , C07D473/02
CPC分类号： C07D241/38 , C07D241/46 , C07D401/06 , C07D409/06 , C07D473/24 , C07D487/04 , G16B15/00 , G16B35/00 , G16C20/50 , G16C20/60
摘要： The teachings relate to methods of identifying inhibitors of dimerization of tyrosine receptor kinases such as EGFR. The methods comprise providing, on a digital computer, a molecular model comprising a complex of extracellular dimerization domains of an RTK, docking a chemical databases to the molecular model, scoring the compounds comprised by the database, and identifying one or more high-scoring compounds. The methods further comprise testing a compound for RTK inhibitory activity in vitro, and testing a compound for specificity as an RTK inhibitor. Also disclosed are compounds selected by the described methods, and methods of treatment using the compounds. Two compounds (NSC11241 and NSC56452) are disclosed that inhibit EGF receptor kinase activation in a dose-dependent manner.
摘要翻译：该教导涉及鉴定酪氨酸受体激酶如EGFR的二聚化抑制剂的方法。所述方法包括在数字计算机上提供包含RTK的细胞外二聚化结构域的复合物的分子模型，将化学数据库对接到分子模型，评估由数据库包含的化合物，以及鉴定一个或多个高得分化合物。所述方法还包括在体外测试化合物的RTK抑制活性，并测试化合物作为RTK抑制剂的特异性。还公开了通过所述方法选择的化合物和使用该化合物的治疗方法。公开了以剂量依赖性方式抑制EGF受体激酶活化的两种化合物（NSC11241和NSC56452）。

2. 发明授权

US08404838B2 Inhibitors of tyrosine kinase receptor dimerization 有权
公开(公告)号：US08404838B2
公开(公告)日：2013-03-26
申请号：US13157472
申请日：2011-06-10
申请人： Garland R. Marshall , Linda J. Pike , Robert Yang
发明人： Garland R. Marshall , Linda J. Pike , Robert Yang
IPC分类号： C07D473/00
CPC分类号： C07D241/38 , C07D241/46 , C07D401/06 , C07D409/06 , C07D473/24 , C07D487/04 , C40B30/02 , G06F19/16 , G06F19/706
摘要： The teachings relate to methods of identifying inhibitors of dimerization of tyrosine receptor kinases such as EGFR. The methods comprise providing, on a digital computer, a molecular model comprising a complex of extracellular dimerization domains of an RTK, docking a chemical databases to the molecular model, scoring the compounds comprised by the database, and identifying one or more high-scoring compounds. The methods further comprise testing a compound for RTK inhibitory activity in vitro, and testing a compound for specificity as an RTK inhibitor. Also disclosed are compounds selected by the described methods, and methods of treatment using the compounds. Two compounds (NSC11241 and NSC56452) are disclosed that inhibit EGF receptor kinase activation in a dose-dependent manner.

3. 发明申请

US20110312919A1 INHIBITORS OF TYROSINE KINASE RECEPTOR DIMERIZATION 有权
标题翻译：酪氨酸激酶受体二聚体的抑制剂
公开(公告)号：US20110312919A1
公开(公告)日：2011-12-22
申请号：US13157472
申请日：2011-06-10
申请人： Garland R. Marshall , Linda J. Pike , Robert Yang
发明人： Garland R. Marshall , Linda J. Pike , Robert Yang
IPC分类号： A61K31/498 , A61K31/655 , C12N5/09 , A61P35/00 , A61K31/517 , C12N9/99 , A61K31/381 , A61K31/52
CPC分类号： C07D241/38 , C07D241/46 , C07D401/06 , C07D409/06 , C07D473/24 , C07D487/04 , C40B30/02 , G06F19/16 , G06F19/706
摘要： The teachings relate to methods of identifying inhibitors of dimerization of tyrosine receptor kinases such as EGFR. The methods comprise providing, on a digital computer, a molecular model comprising a complex of extracellular dimerization domains of an RTK, docking a chemical databases to the molecular model, scoring the compounds comprised by the database, and identifying one or more high-scoring compounds. The methods further comprise testing a compound for RTK inhibitory activity in vitro, and testing a compound for specificity as an RTK inhibitor. Also disclosed are compounds selected by the described methods, and methods of treatment using the compounds. Two compounds (NSC11241 and NSC56452) are disclosed that inhibit EGF receptor kinase activation in a dose-dependent manner.
摘要翻译：该教导涉及鉴定酪氨酸受体激酶如EGFR的二聚化抑制剂的方法。所述方法包括在数字计算机上提供包含RTK的细胞外二聚化结构域的复合物的分子模型，将化学数据库与分子模型对接，评估由数据库包含的化合物，以及鉴定一种或多种高得分化合物。所述方法还包括在体外测试化合物的RTK抑制活性，并测试化合物作为RTK抑制剂的特异性。还公开了通过所述方法选择的化合物和使用该化合物的治疗方法。公开了以剂量依赖性方式抑制EGF受体激酶活化的两种化合物（NSC11241和NSC56452）。

4. 发明申请

US20070281003A1 Polymer-Based Films and Drug Delivery Systems Made Therefrom 审中-公开
标题翻译：基于聚合物的薄膜和药物输送系统
公开(公告)号：US20070281003A1
公开(公告)日：2007-12-06
申请号：US11674223
申请日：2007-02-13
申请人： Richard Fuisz , Joseph Fuisz , Garry Myers , Robert Yang , Pradeep Sanghvi
发明人： Richard Fuisz , Joseph Fuisz , Garry Myers , Robert Yang , Pradeep Sanghvi
IPC分类号： A61K9/70
CPC分类号： B29C39/003 , A61J3/00 , A61J2200/20 , A61K9/006 , A61K9/7007 , B29C39/14 , B29C71/02 , F26B13/104
摘要： The invention relates to the film products and methods of their preparation that demonstrate a non-self-aggregating uniform heterogeneity. Desirably, the films disintegrate in water and may be formed by a controlled drying process, or other process that maintains the required uniformity of the film. The films contain a polymer component which includes polyethylene oxide, optionally blended with at least one additional polymer. The films may alternatively contain a polymer component which includes polyvinyl alcohol, optionally blended with at least one additional polymer. The films also may contain a pharmaceutical and/or cosmetic active agent.
摘要翻译：本发明涉及其制备的薄膜产品及其制备方法，其表现出非自聚集均匀的异质性。期望地，膜在水中分解并且可以通过受控的干燥过程或保持膜所需的均匀性的其它方法形成。膜包含聚合物组分，其包括聚环氧乙烷，任选地与至少一种另外的聚合物共混。膜可以备选地包含聚合物组分，其包括聚乙烯醇，任选地与至少一种另外的聚合物共混。膜也可以含有药物和/或美容活性剂。

5. 发明申请

US20070069416A1 Thin film with non-self-aggregating uniform heterogeneity and drug delivery systems made therefrom 审中-公开
标题翻译：具有非自聚集均匀异质性的薄膜和由其制成的药物递送系统
公开(公告)号：US20070069416A1
公开(公告)日：2007-03-29
申请号：US11473356
申请日：2006-06-22
申请人： Robert Yang , Richard Fuisz , Gary Myers , Joseph Fuisz
发明人： Robert Yang , Richard Fuisz , Gary Myers , Joseph Fuisz
IPC分类号： B29C37/00 , B29D7/00
CPC分类号： A61K9/7007 , A61K9/0056 , A61K9/006 , A61K9/1635 , A61K9/1652 , A61K9/7015 , A61K31/192 , A61K31/422 , A61K31/435 , A61K31/4525 , A61K31/4545 , A61K31/80 , A61K47/02 , A61K47/10 , A61K47/22 , A61K47/32 , A61K47/38 , A61K47/44 , A61K47/46 , C08J5/18
摘要： The invention relates to the film products and methods of their preparation that demonstrate a non-self-aggregating uniform heterogeneity. Desirably the films disintegrate in water and may be formed by a controlled drying process, or other process that maintains the required uniformity of the film.
摘要翻译：本发明涉及其制备的薄膜产品及其制备方法，其表现出非自聚集均匀的异质性。理想地，膜在水中分解，并且可以通过受控的干燥过程或保持膜所需均匀性的其它方法形成。

6. 发明申请

US20050136414A1 Methods and compositions for making locus-specific arrays 审中-公开
标题翻译：用于制作位点特异性阵列的方法和组合物
公开(公告)号：US20050136414A1
公开(公告)日：2005-06-23
申请号：US10746249
申请日：2003-12-23
申请人： Kevin Gunderson , David Barker , Mark Chee , Tim McDaniel , Robert Yang
发明人： Kevin Gunderson , David Barker , Mark Chee , Tim McDaniel , Robert Yang
IPC分类号： C12Q1/68 , C12M1/34 , C12P19/34
CPC分类号： C12Q1/6837 , C12Q2525/161
摘要： The present invention includes methods and compositions relating to locus-specific arrays. More specifically, this invention includes methods for making locus-specific arrays from universal arrays in situ, the custom arrays made using those methods, and methods of using the custom arrays to detect target nucleotides.
摘要翻译：本发明包括与轨迹特异性阵列相关的方法和组合物。更具体地，本发明包括用于从现场通用阵列制备位点特异性阵列的方法，使用这些方法制备的定制阵列，以及使用定制阵列检测靶核苷酸的方法。

7. 发明授权

US4514422A Non-staling gum composition and method of preparation 失效
标题翻译：不稳定的口香糖组合物及其制备方法
公开(公告)号：US4514422A
公开(公告)日：1985-04-30
申请号：US333523
申请日：1981-12-22
申请人： Robert Yang , Martin M. Rieger
发明人： Robert Yang , Martin M. Rieger
IPC分类号： A23G4/00 , A23G4/06 , A23G4/08 , A23G4/10 , G11B5/716 , A23G3/30
CPC分类号： A23G4/06 , A23G4/00 , A23G4/08 , A23G4/10 , G11B5/716
摘要： The present invention relates to a gum composition exhibiting improved shelf life and resistance to staling, that comprises a substantially anhydrous mixture of a gum base, at least one sugar alcohol, and glycerin, the glycerin present in an amount ranging from greater than 10% to about 18% by weight of the composition. The gum composition preferably contains no more than 2% by weight of water. The invention includes a method for preparing the gum composition, comprising treating the ingredients thereof, including the glycerin, to remove substantially all water therefrom, thereafter combining the sugar alcohol with the glycerin under agitation and at about 50.degree. C., and adding subsequently thereto the gum base, after which certain additive materials, such as flavorings, and the like may be added with mixing.
摘要翻译：本发明涉及一种口香糖组合物，其具有改善的保存期限和抗老化性能，其包括胶基，至少一种糖醇和甘油的基本上无水的混合物，所述甘油的存在量为大于10％至约18重量％的组合物。口香糖组合物优选含有不超过2重量％的水。本发明包括一种制备口香糖组合物的方法，包括处理其成分，包括甘油，以从其中除去基本上所有的水，然后在搅拌和约50℃下将糖醇与甘油混合，随后加入胶基，然后混合加入某些添加剂如调味剂等。

8. 发明申请

US20070262398A1 High voltage semiconductor device with lateral series capacitive structure 有权
标题翻译：具有横向串联电容结构的高压半导体器件
公开(公告)号：US20070262398A1
公开(公告)日：2007-11-15
申请号：US11801819
申请日：2007-05-10
申请人： Mohamed Darwish , Robert Yang
发明人： Mohamed Darwish , Robert Yang
IPC分类号： H01L29/76
CPC分类号： H01L29/7835 , H01L29/0634 , H01L29/0692 , H01L29/407 , H01L29/66659
摘要： According to the present invention, semiconductor device breakdown voltage can be increased by embedding field shaping regions within a drift region of the semiconductor device. A controllable current path extends between two device terminals on the top surface of a planar substrate, and the controllable current path includes the drift region. Each field shaping region includes two or more electrically conductive regions that are electrically insulated from each other, and which are capacitively coupled to each other to form a voltage divider dividing a potential between the first and second terminals. One or more of the electrically conductive regions are isolated from any external electrical contact. Such field shaping regions can provide enhanced electric field uniformity in current-carrying parts of the drift region, thereby increasing device breakdown voltage.
摘要翻译：根据本发明，可以通过在半导体器件的漂移区域内嵌入场成形区域来增加半导体器件击穿电压。可控电流路径在平面基板的顶表面上的两个器件端子之间延伸，并且可控电流路径包括漂移区域。每个场整形区域包括彼此电绝缘并且彼此电容耦合以形成分压第一和第二端子之间的电势的分压器的两个或更多个导电区域。一个或多个导电区域与任何外部电触点隔离。这种场成形区域可以在漂移区域的载流部分中提供增强的电场均匀性，从而增加器件击穿电压。

9. 发明申请

US20060267044A1 DMOS transistor with a poly-filled deep trench for improved performance 失效
标题翻译： DMOS晶体管具有多填充深沟槽，以提高性能
公开(公告)号：US20060267044A1
公开(公告)日：2006-11-30
申请号：US11234519
申请日：2005-09-23
申请人： Robert Yang
发明人： Robert Yang
IPC分类号： H01L29/74
CPC分类号： H01L29/407 , H01L29/0696 , H01L29/0878 , H01L29/1087 , H01L29/1095 , H01L29/42368 , H01L29/7816 , H01L29/7823
摘要： Floating trenches are arranged in the layout of a single DMOS transistor or an array of DMOS transistors, the array forming a single power transistor. The trenches run perpendicular to the gate width direction either outside the transistor(s) or between rows of the transistors. The floating trenches are at a potential between the drain voltage and the substrate voltage (usually ground). The potentials of the opposing trenches cause merging depletion regions under the gate in the drift region. This merging shapes the field lines so as to increase the breakdown voltage of the transistor and provide other advantages. The technique is applicable to both lateral and vertical DMOS transistors.
摘要翻译：浮动沟槽布置在单个DMOS晶体管或DMOS晶体管阵列的布局中，该阵列形成单个功率晶体管。沟槽在晶体管的外部或晶体管的行之间垂直于栅极宽度方向延伸。浮动沟槽处于漏极电压和衬底电压（通常为接地）之间的电位。相对的沟槽的电位导致在漂移区域中的栅极下方的合并耗尽区域。这种合并形成场线，以增加晶体管的击穿电压并提供其它优点。该技术适用于横向和垂直DMOS晶体管。

10. 发明申请

US20060255401A1 Increasing breakdown voltage in semiconductor devices with vertical series capacitive structures 审中-公开
标题翻译：增加具有垂直串联电容结构的半导体器件中的击穿电压
公开(公告)号：US20060255401A1
公开(公告)日：2006-11-16
申请号：US11202523
申请日：2005-08-11
申请人： Robert Yang , Francois Hebert
发明人： Robert Yang , Francois Hebert
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L29/7802 , H01L29/407 , H01L29/4236 , H01L29/7395 , H01L29/74 , H01L29/7803 , H01L29/7811 , H01L29/7813 , H01L29/861
摘要： This invention relates to an apparatus and method for achieving high breakdown voltage and low on-resistance in semiconductor devices that have top, intermediate and bottom regions with a controllable current path traversing any of these regions. The device has an insulating trench that is coextensive with the top and intermediate regions and girds these regions from at least one side and preferably from both or all sides. A series capacitive structure with a biased top element and a number of floating elements is disposed in the insulating trench, and the intermediate region is endowed with a capacitive property that is chosen to establish a capacitive interaction or coupling between the series capacitive structure and the intermediate region so that the breakdown voltage VBD is maximized and on-resistance is minimized. The capacitive property of the intermediate region is established by an appropriately chosen material constitution and is further controlled by a predetermined constitution of the insulating trench. The apparatus and method of invention are useful in any number of semiconductor devices including, among other, transistors, bipolar transistors, MOSFETs, JFETs, thyristors and diodes.
摘要翻译：本发明涉及一种用于实现半导体器件中的高击穿电压和低导通电阻的装置和方法，所述半导体器件具有穿过任何这些区域的可控电流路径的顶部，中间和底部区域。该装置具有与顶部和中间区域共同延伸的绝缘沟槽，并且从至少一个侧面，优选地从两侧或全部侧面将这些区域线化。具有偏置顶部元件和多个浮动元件的串联电容结构设置在绝缘沟槽中，并且中间区域具有被选择用于建立串联电容结构和中间体之间的电容性相互作用或耦合的电容性质区域，使得击穿电压V BAT最大化，导通电阻最小化。通过适当选择的材料结构建立中间区域的电容性质，并通过绝缘沟槽的预定结构进一步控制。本发明的装置和方法可用于任何数量的半导体器件，其中包括晶体管，双极晶体管，MOSFET，JFET，晶闸管和二极管。

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