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    • 4. 发明申请
    • DMOS transistor with floating poly-filled trench for improved performance through 3-D field shaping
    • 具有浮动多晶填充沟槽的DMOS晶体管,用于通过3-D场成形改善性能
    • US20070052060A1
    • 2007-03-08
    • US11351644
    • 2006-02-09
    • Robert Yang
    • Robert Yang
    • H01L29/00H01L21/331
    • H01L29/7802H01L21/823487H01L29/0696H01L29/407H01L29/4238H01L29/7803H01L29/7813
    • One or more vertical DMOS transistors, such as trench FETS, are formed between opposing floating poly-filled trench portions. The opposing trench portions may include two parallel trenches, rectangular trenches, hexagonal trenches, octagonal trenches, circular trenches, or other shapes. The floating trench portions are capacitively coupled to assume a potential somewhere between the high drain voltage (below the trenches) and the body voltage (near the top of the trenches). The floating trench portions will have a potential below the drift region and deplete the drift region. The depletion regions caused by the opposing trench portions will merge under the gate with a sufficiently high drain voltage. The electric field lines in the drift region will be shaped to increase the breakdown voltage of the device.
    • 在相对的浮动多晶填充沟槽部分之间形成一个或多个垂直DMOS晶体管,例如沟槽FET。 相对的沟槽部分可以包括两个平行的沟槽,矩形沟槽,六边形沟槽,八边形沟槽,圆形沟槽或其它形状。 浮动沟槽部分电容耦合以在高漏极电压(沟槽下方)和体电压(靠近沟槽顶部)之间的某处存在电位。 浮动沟槽部分将具有位于漂移区域下方的电位并耗尽漂移区域。 由相对的沟槽部分引起的耗尽区域将在栅极下面以足够高的漏极电压合并。 漂移区域中的电场线将被成形以增加器件的击穿电压。
    • 5. 发明申请
    • Terminations for semiconductor devices with floating vertical series capacitive structures
    • 具有浮动垂直串联电容结构的半导体器件的端接
    • US20070012983A1
    • 2007-01-18
    • US11487142
    • 2006-07-14
    • Robert YangRichard BlanchardFrancois Hebert
    • Robert YangRichard BlanchardFrancois Hebert
    • H01L29/94
    • H01L29/7803H01L29/404H01L29/405H01L29/407H01L29/4236H01L29/7802H01L29/7811H01L29/7813
    • This invention relates to achieving high breakdown voltage and low on-resistance in semiconductor devices that have top, intermediate and bottom regions with a controllable current path traversing any of these regions. The device has an insulating trench that is coextensive with the top and intermediate regions and girds these regions from at least one side and preferably from both or all sides. A series capacitive structure with a biased top element and a number of floating elements is disposed in the insulating trench, and the intermediate region is endowed with a capacitive property that is chosen to establish a capacitive interaction or coupling between the series capacitive structure and the intermediate region so that the breakdown voltage VBD is maximized and on-resistance is minimized. A second series capacitive structure disposed in a second insulating trench can be employed to terminate the device.
    • 本发明涉及在半导体器件中实现高击穿电压和低导通电阻,所述半导体器件具有穿过任何这些区域的可控电流路径的顶部区域,中间区域和底部区域。 该装置具有与顶部和中间区域共同延伸的绝缘沟槽,并且从至少一个侧面,优选地从两侧或全部侧面将这些区域线化。 具有偏置顶部元件和多个浮动元件的串联电容结构设置在绝缘沟槽中,并且中间区域具有被选择用于建立串联电容结构和中间体之间的电容性相互作用或耦合的电容性质 区域,使得击穿电压V BAT最大化,导通电阻最小化。 可以采用设置在第二绝缘沟槽中的第二串联电容结构来终止该器件。
    • 9. 发明授权
    • Socket connector
    • 插座连接器
    • US6142792A
    • 2000-11-07
    • US348721
    • 1999-07-06
    • Robert Yang
    • Robert Yang
    • H01R13/11H01R13/115H05K7/10H01R12/00
    • H01R13/112H05K7/1084
    • A socket connector includes an insulative body defining a number of chambers each retaining a contact element. The chambers receive solder balls of an integrated circuit (IC) module therein to form electrical engagement between each contact element and the corresponding solder ball of the IC module. The contact element has a trifurcated end including a central branch and two side branches which are bent in opposite directions thereby defining a space therebetween for receiving and securely retaining the solder ball. The side branches are spaced from each other for partially receiving the solder ball therebetween. Each side branch has a sharp edge that cuts through an oxidation layer formed on the solder ball thereby eliminating high impedance caused by the oxidation layer.
    • 插座连接器包括限定多个室的绝缘体,每个室保持接触元件。 这些室在其中接收集成电路(IC)模块的焊球,以在每个接触元件和IC模块的相应焊球之间形成电接合。 接触元件具有包括中心分支和两个侧向分支的三相端部,两个侧向分支在相反方向上弯曲,从而在其间限定了用于容纳和牢固地保持焊球的空间。 侧分支彼此间隔开,以便部分地接收它们之间的焊球。 每个侧分支具有尖锐的边缘,其切割形成在焊球上的氧化层,从而消除由氧化层引起的高阻抗。