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11. 发明申请

US20080178803A1 PLASMA REACTOR WITH ION DISTRIBUTION UNIFORMITY CONTROLLER EMPLOYING PLURAL VHF SOURCES 审中-公开
标题翻译：具有离子分布均质控制器的等离子体反应器使用多个甚高频源
公开(公告)号：US20080178803A1
公开(公告)日：2008-07-31
申请号：US11733913
申请日：2007-04-11
申请人： KENNETH S. COLLINS , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： KENNETH S. COLLINS , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： B05C11/00
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32165 , H01J37/32935
摘要： A plasma reactor includes a ceiling electrode facing a workpiece support pedestal and a pedestal electrode in the pedestal and first and second VHF power sources of different frequencies coupled to the same or to different ones of the ceiling electrode and the pedestal electrode. The first and second VHF power sources are of sufficiently high and sufficiently low frequencies, respectively, to produce center-high and center-low plasma distribution non-uniformities, respectively, in the chamber. The reactor further includes a controller programmed to change the relative output power levels of the first and second VHF power sources to: (a) increase the relative output power level of the first VHF power source whenever plasma ion distribution has a predominantly edge-high non-uniformity, and (b) increase the relative output power level of the second VHF power source whenever plasma ion distribution has a predominantly center-high non-uniformity.
摘要翻译：等离子体反应器包括面对工件支撑基座的顶板电极和基座中的基座电极以及耦合到天花板电极和基座电极中相同或不同的不同频率的第一和第二VHF电源。第一和第二VHF电源分别具有足够高和足够低的频率，以分别在腔室中产生中心高和中心低等离子体分布不均匀性。电抗器还包括被编程为将第一和第二VHF电源的相对输出功率电平改变为：（a）只要等离子体离子分布具有主要为边缘高的非高电平的第一VHF电源的相对输出功率电平，（b）当等离子体离子分布主要是中心高的不均匀性时，增加第二VHF电源的相对输出功率电平。

12. 发明申请

US20060065632A1 Methods and apparatus for monitoring a process in a plasma processing system by measuring a plasma frequency 审中-公开
标题翻译：通过测量等离子体频率来监测等离子体处理系统中的处理的方法和装置
公开(公告)号：US20060065632A1
公开(公告)日：2006-03-30
申请号：US10952562
申请日：2004-09-27
申请人： Chia-Cheng Cheng , Timothy Guiney , Rao Annapragada , Subhash Deshmukh
发明人： Chia-Cheng Cheng , Timothy Guiney , Rao Annapragada , Subhash Deshmukh
IPC分类号： C23F1/00
CPC分类号： H01J37/3299 , H01J37/32082 , H01J37/32935
摘要： A method for in-situ monitoring a process in a plasma processing system having a plasma processing chamber is disclosed. The method includes positioning a substrate in the plasma processing chamber. The method also includes striking a plasma within the plasma processing chamber while the substrate is disposed within the plasma processing chamber. The method further includes obtaining a measured plasma frequency that exists after the plasma is struck, the measured plasma frequency value having a first value when the plasma is absent and at least a second value different from the first value when the plasma is present. The method also includes correlating the measured plasma frequency value with an attribute of the process, if the measured plasma frequency value is outside of a predefined plasma frequency value envelope.
摘要翻译：公开了一种用于在具有等离子体处理室的等离子体处理系统中进行原位监测方法。该方法包括将基板定位在等离子体处理室中。该方法还包括在衬底设置在等离子体处理室内时在等离子体处理室内击打等离子体。该方法还包括获得在等离子体被击打之后存在的测量等离子体频率，当等离子体不存在时测量的等离子体频率值具有第一值，并且当存在等离子体时，获得与第一值不同的至少第二值。如果所测量的等离子体频率值在预定的等离子体频率值包络之外，则该方法还包括将所测量的等离子体频率值与该过程的属性相关联。

13. 发明申请

US20060065623A1 Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage 有权
标题翻译：通过测量自偏压来监测等离子体处理系统中的工艺的方法和装置
公开(公告)号：US20060065623A1
公开(公告)日：2006-03-30
申请号：US10951553
申请日：2004-09-27
申请人： Timothy Guiney , Rao Annapragada , Subhash Deshmukh , Chia Cheng
发明人： Timothy Guiney , Rao Annapragada , Subhash Deshmukh , Chia Cheng
IPC分类号： G01L21/30 , H01L21/306 , H01L21/461
CPC分类号： H01J37/32935
摘要： A method for in-situ monitoring a process in a plasma processing system having a plasma processing chamber is disclosed. The method includes positioning a substrate in the plasma processing chamber. The method also includes striking a plasma within the plasma processing chamber while the substrate is disposed within the plasma processing chamber. The method further includes obtaining a measured self-bias voltage that exists after the plasma is struck, the measured self-bias voltage value having a first value when the plasma is absent and at least a second value different from the first value when the plasma is present. The method also includes correlating the measured self-bias voltage value with an attribute of the process, if the measured self-bias voltage value is outside of a predefined self-bias voltage value envelope.
摘要翻译：公开了一种用于在具有等离子体处理室的等离子体处理系统中进行原位监测方法。该方法包括将基板定位在等离子体处理室中。该方法还包括在衬底设置在等离子体处理室内时在等离子体处理室内击打等离子体。该方法还包括获得在等离子体被击打之后存在的测量的自偏压，当等离子体不存在时，所测量的自偏压值具有第一值，当等离子体为等离子体时，获得与第一值不同的第二值当下。该方法还包括将所测量的自偏压值与该过程的属性相关联，如果所测量的自偏压值在预定义的自偏压值包络之外。

14. 发明授权

US08076247B2 Plasma process uniformity across a wafer by controlling RF phase between opposing electrodes 失效
标题翻译：通过控制相对电极之间的RF相位，晶片上的等离子体工艺均匀性
公开(公告)号：US08076247B2
公开(公告)日：2011-12-13
申请号：US11733770
申请日：2007-04-11
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： H01L21/302
CPC分类号： C23C16/45574 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01L21/67069 , H01L21/6831
摘要： A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode. The method also includes providing an edge ground return path. The method further includes adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.
摘要翻译：提供了一种用于在等离子体反应器室中处理工件的方法。该方法包括通过天线电极将等离子体耦合到腔室中的等离子体，并通过工件支撑电极将等离子体的功率耦合到至少近似相同的RF频率。该方法还包括提供边缘接地返回路径。该方法还包括调节（a）所述电极之间的电流之间的比例和（b）从所述电极到达边缘接地返回路径的电流，以控制工件上的等离子体离子密度分布均匀性。

15. 发明申请

US20100330805A1 METHODS FOR FORMING HIGH ASPECT RATIO FEATURES ON A SUBSTRATE 审中-公开
标题翻译：在基板上形成高比例特征的方法
公开(公告)号：US20100330805A1
公开(公告)日：2010-12-30
申请号：US11934589
申请日：2007-11-02
申请人： KENNY LINH DOAN , Kathryn Keswick , Subhash Deshmukh , Stephan Wege , Wonseok Lee
发明人： KENNY LINH DOAN , Kathryn Keswick , Subhash Deshmukh , Stephan Wege , Wonseok Lee
IPC分类号： H01L21/768
CPC分类号： H01L21/31116 , H01L21/31144
摘要： Methods for forming anisotropic features for high aspect ratio application in etch process are provided. The methods described herein advantageously facilitates profile and dimension control of features with high aspect ratios. In one embodiment, a method for anisotropic etching a dielectric layer on a substrate includes providing a substrate having a patterned mask layer disposed on a dielectric layer in an etch chamber, supplying a gas mixture including at least a fluorine and carbon containing gas and a silicon fluorine gas into the etch chamber, and etching features in the dielectric layer in the presence of a plasma formed from the gas mixture.
摘要翻译：提供了用于在蚀刻工艺中形成用于高纵横比应用的各向异性特征的方法。本文所述的方法有利地有利于具有高纵横比的特征的轮廓和尺寸控制。在一个实施例中，用于各向异性蚀刻衬底上的电介质层的方法包括提供具有设置在蚀刻室中的电介质层上的图案化掩模层的衬底，提供至少包含含氟和含碳气体的气体混合物和硅氟气进入蚀刻室，并且在由气体混合物形成的等离子体的存在下蚀刻介电层中的特征。

16. 发明申请

US20080179011A1 PLASMA REACTOR WITH WIDE PROCESS WINDOW EMPLOYING PLURAL VHF SOURCES 审中-公开
标题翻译：等离子体反应器，具有采用多个VHF源的宽过程窗口
公开(公告)号：US20080179011A1
公开(公告)日：2008-07-31
申请号：US11734040
申请日：2007-04-11
申请人： KENNETH S. COLLINS , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： KENNETH S. COLLINS , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01L21/67069 , H01L21/6831
摘要： A plasma reactor includes an electrostatic chuck in the chamber for supporting the workpiece, a ceiling electrode facing the electrostatic chuck and an ESC electrode in the electrostatic chuck with an electrostatic clamping voltage supply coupled to the ESC electrode. The reactor further includes at least a first RF bias source of an LF or HF frequency coupled to the pedestal electrode, and first and second VHF power sources of different frequencies coupled to the same or to different ones of the electrodes. The first and second VHF power sources are of sufficiently high and sufficiently low frequencies, respectively, to produce center-high and center-low plasma distribution non-uniformities, respectively, in the chamber.
摘要翻译：等离子体反应器包括用于支撑工件的室中的静电卡盘，面向静电卡盘的天花板电极和静电卡盘中的ESC电极，其具有耦合到ESC电极的静电钳位电压源。反应器还包括耦合到基座电极的LF或HF频率的至少第一RF偏置源，以及耦合到相同或不同电极的不同频率的第一和第二VHF电源。第一和第二VHF电源分别具有足够高和足够低的频率，以分别在腔室中产生中心高和中心低等离子体分布不均匀性。

17. 发明授权

US07323116B2 Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage 有权
标题翻译：通过测量自偏压来监测等离子体处理系统中的工艺的方法和装置
公开(公告)号：US07323116B2
公开(公告)日：2008-01-29
申请号：US10951553
申请日：2004-09-27
申请人： Timothy J. Guiney , Rao Annapragada , Subhash Deshmukh , Chia Cheng Cheng
发明人： Timothy J. Guiney , Rao Annapragada , Subhash Deshmukh , Chia Cheng Cheng
IPC分类号： G01R31/00
CPC分类号： H01J37/32935
摘要： A method for in-situ monitoring a process in a plasma processing system having a plasma processing chamber is disclosed. The method includes positioning a substrate in the plasma processing chamber. The method also includes striking a plasma within the plasma processing chamber while the substrate is disposed within the plasma processing chamber. The method further includes obtaining a measured self-bias voltage that exists after the plasma is struck, the measured self-bias voltage value having a first value when the plasma is absent and at least a second value different from the first value when the plasma is present. The method also includes correlating the measured self-bias voltage value with an attribute of the process, if the measured self-bias voltage value is outside of a predefined self-bias voltage value envelope.
摘要翻译：公开了一种用于在具有等离子体处理室的等离子体处理系统中进行原位监测方法。该方法包括将基板定位在等离子体处理室中。该方法还包括在衬底设置在等离子体处理室内时在等离子体处理室内击打等离子体。该方法还包括获得在等离子体被击打之后存在的测量的自偏压，当等离子体不存在时，所测量的自偏压值具有第一值，当等离子体为等离子体时，获得与第一值不同的第二值当下。该方法还包括将所测量的自偏压值与该过程的属性相关联，如果所测量的自偏压值在预定义的自偏压值包络之外。

18. 发明授权

US07084070B1 Treatment for corrosion in substrate processing 有权
标题翻译：处理基板加工腐蚀
公开(公告)号：US07084070B1
公开(公告)日：2006-08-01
申请号：US10623016
申请日：2003-07-17
申请人： Sangheon Lee , Sean S. Kang , S M Reza Sadjadi , Subhash Deshmukh , Ji Soo Kim
发明人： Sangheon Lee , Sean S. Kang , S M Reza Sadjadi , Subhash Deshmukh , Ji Soo Kim
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/76802 , H01L21/31111 , H01L21/31116 , H01L21/32137 , H01L21/32138 , H01L21/76807 , H01L21/7681 , H01L21/76814
摘要： A method for processing substrate to form a semiconductor device is disclosed. The substrate includes an etch stop layer disposed above a metal layer. The method includes etching through the etch stop layer down to the copper metal layer, using a plasma etch process that utilizes a chlorine-containing etchant source gas, thereby forming etch stop layer openings in the etch stop layer. The etch stop layer includes at least one of a SiN and SiC material. Thereafter, the method includes performing a wet treatment on the substrate using a solution that contains acetic acid (CH3COOH) or acetic acid/ammonium hydroxide (NH4OH) to remove at least some of the copper oxides. Alternatively, the copper oxides may be removed using a H2 plasma. BTA passivation may be optionally performed on the substrate.
摘要翻译：公开了一种用于处理基板以形成半导体器件的方法。衬底包括设置在金属层上方的蚀刻停止层。该方法包括使用利用含氯蚀刻剂源气体的等离子体蚀刻工艺将蚀刻停止层蚀刻到铜金属层下方，从而在蚀刻停止层中形成蚀刻停止层开口。蚀刻停止层包括SiN和SiC材料中的至少一种。此后，该方法包括使用含有乙酸（CH 3 COOH）或乙酸/氢氧化铵（NH 4 OH）的溶液对底物进行湿处理至去除至少一些铜氧化物。或者，可以使用H 2 O 3等离子体去除铜氧化物。可以任选地在衬底上进行BTA钝化。

19. 发明申请

US20060065631A1 Methods and apparatus for monitoring a process in a plasma processing system by measuring impedance 审中-公开
标题翻译：通过测量阻抗来监测等离子体处理系统中的过程的方法和装置
公开(公告)号：US20060065631A1
公开(公告)日：2006-03-30
申请号：US10951548
申请日：2004-09-27
申请人： Chia-Cheng Cheng , Timothy Guiney , Rao Annapragada , Subhash Deshmukh
发明人： Chia-Cheng Cheng , Timothy Guiney , Rao Annapragada , Subhash Deshmukh
IPC分类号： C23F1/00
CPC分类号： H01J37/3299 , H01J37/32082 , H01J37/32935
摘要： A method for in-situ monitoring a process in a plasma processing system having a plasma processing chamber is disclosed. The method includes positioning a substrate in the plasma processing chamber. The method also includes striking a plasma within the plasma processing chamber while the substrate is disposed within the plasma processing chamber. The method further includes obtaining a measured impedance that exists after the plasma is struck, the measured impedance value having a first value when the plasma is absent and at least a second value different from the first value when the plasma is present. The method also includes correlating the measured impedance value with an attribute of the process, if the measured impedance value is outside of a predefined impedance value envelope.
摘要翻译：公开了一种用于在具有等离子体处理室的等离子体处理系统中进行原位监测方法。该方法包括将基板定位在等离子体处理室中。该方法还包括在衬底设置在等离子体处理室内时在等离子体处理室内击打等离子体。该方法还包括获得在等离子体被击打之后存在的测量阻抗，当等离子体不存在时测量的阻抗值具有第一值，并且当存在等离子体时，获得与第一值不同的至少第二值。该方法还包括将测量的阻抗值与该过程的属性相关联，如果测量的阻抗值在预定的阻抗值包络之外。

20. 发明授权

US08601017B2 Serving reliable content through search 有权
标题翻译：通过搜索提供可靠的内容
公开(公告)号：US08601017B2
公开(公告)日：2013-12-03
申请号：US12977130
申请日：2010-12-23
申请人： Chetan Subhash Deshmukh
发明人： Chetan Subhash Deshmukh
IPC分类号： G06F17/30
CPC分类号： G06F17/30867 , G06Q10/10 , H04L67/306
摘要： A system and method for serving reliable content in search, the method comprising: receiving at a server computer from a user, a request to search a network for certain information; searching the network for the information requested and obtaining a set of results including user-generated content; searching the user's list of social connections; determining whether any of the search results related to a person in the user's list of social connections/contacts; and providing an indication of greater reliability for the search results that correspond to persons from the user's list of social connections.
摘要翻译：一种用于在搜索中提供可靠内容的系统和方法，所述方法包括：从服务器计算机接收用户搜索某些信息的请求; 搜索网络获得所请求的信息，并获得包括用户生成的内容的一组结果; 搜索用户的社会关系列表; 确定任何搜索结果是否与用户的社交连接/联系人列表中的人有关; 并且提供与来自用户社交连接列表的人相对应的搜索结果的更高可靠性的指示。

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