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1. 发明授权

US08360003B2 Plasma reactor with uniform process rate distribution by improved RF ground return path 有权
标题翻译：等离子体反应器具有均匀的加工速率分布，通过改进的射频接地回路
公开(公告)号：US08360003B2
公开(公告)日：2013-01-29
申请号：US12501966
申请日：2009-07-13
申请人： Andrew Nguyen , Hiroji Hanawa , Kartik Ramaswamy , Samer Banna , Anchel Sheyner , Valentin N. Todorow
发明人： Andrew Nguyen , Hiroji Hanawa , Kartik Ramaswamy , Samer Banna , Anchel Sheyner , Valentin N. Todorow
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/16 , H01J37/321 , H01J37/32623 , H01J37/32633 , H01J37/32642 , H01L31/18
摘要： In a plasma reactor having an RF plasma source power applicator at its ceiling, an integrally formed grid liner includes a radially extending plasma confinement ring and an axially extending side wall liner. The plasma confinement ring extends radially outwardly near the plane of a workpiece support surface from a pedestal side wall, and includes an annular array of radial slots, each of the slots having a narrow width corresponding to an ion collision mean free path length of a plasma in the chamber. The side wall liner covers an interior surface of the chamber side wall and extends axially from a height near a height of said workpiece support surface to the chamber ceiling.
摘要翻译：在其顶部具有RF等离子体源功率施加器的等离子体反应器中，整体形成的栅格衬套包括径向延伸的等离子体限制环和轴向延伸的侧壁衬套。等离子体约束环从基座侧壁在工件支撑表面的平面附近径向向外延伸，并且包括径向槽的环形阵列，每个槽具有对应于等离子体的离子碰撞平均自由路径长度的窄宽度在房间里侧壁衬套覆盖室侧壁的内表面并且从靠近所述工件支撑表面的高度的高度轴向延伸到室顶部。

2. 发明申请

US20120199071A1 PLASMA IMMERSION CHAMBER 审中-公开
标题翻译：等离子体浸泡室
公开(公告)号：US20120199071A1
公开(公告)日：2012-08-09
申请号：US13446732
申请日：2012-04-13
申请人： KENNETH S. COLLINS , Andrew N. Nguyen , Kartik Ramaswamy , Hiroji Hanawa , Douglas A. Buchberger, JR. , Daniel J. Hoffman , Amir Al-Bayati
发明人： KENNETH S. COLLINS , Andrew N. Nguyen , Kartik Ramaswamy , Hiroji Hanawa , Douglas A. Buchberger, JR. , Daniel J. Hoffman , Amir Al-Bayati
IPC分类号： C23C16/455 , C23C16/50
CPC分类号： H01J37/32458 , H01J37/32412 , H01J37/32477
摘要： Embodiments described herein relate to a plasma chamber and processing system utilizing robust components. In one embodiment, a chamber is provided. The chamber includes a body having an interior volume, a gas distribution assembly disposed in the interior volume opposing a substrate support, the gas distribution assembly having a coolant channel disposed thereon, and a first hollow conduit and a second hollow conduit coupled to the body and in fluid communication with the interior volume.
摘要翻译：本文所述的实施例涉及使用鲁棒部件的等离子体室和处理系统。在一个实施例中，提供了一个室。所述腔室包括具有内部体积的本体，设置在所述内部体积中与衬底支撑件相对的气体分配组件，所述气体分配组件具有设置在其上的冷却剂通道，以及联接到所述主体的第一中空导管和第二中空导管，与内部容积流体连通。

3. 发明授权

US08168519B2 Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces 有权
标题翻译：等离子体浸没离子注入方法，在室内表面上使用纯的或接近纯的硅调味层
公开(公告)号：US08168519B2
公开(公告)日：2012-05-01
申请号：US13101843
申请日：2011-05-05
申请人： Shijian Li , Kartik Ramaswamy , Hiroji Hanawa , Seon-Mee Cho , Biagio Gallo , Dongwon Choi , Majeed A. Foad
发明人： Shijian Li , Kartik Ramaswamy , Hiroji Hanawa , Seon-Mee Cho , Biagio Gallo , Dongwon Choi , Majeed A. Foad
IPC分类号： H01L21/425
CPC分类号： H01J37/32412 , C23C14/48 , C23C14/564 , H01L21/2236
摘要： Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.
摘要翻译：在静电卡盘上采用非常高的RF偏置电压以获得必要的植入深度分布的等离子体浸没离子注入是通过在晶片引入之前首先在内部腔室表面上沉积部分导电的含硅调节层来进行的。

4. 发明申请

US20120086464A1 IN-SITU VHF VOLTAGE/CURRENT SENSORS FOR A PLASMA REACTOR 有权
标题翻译：用于等离子体反应器的现场甚高频电压/电流传感器
公开(公告)号：US20120086464A1
公开(公告)日：2012-04-12
申请号：US13052280
申请日：2011-03-21
申请人： Hiroji Hanawa , Satoru Kobayashi , Kartik Ramaswamy , Shahid Rauf
发明人： Hiroji Hanawa , Satoru Kobayashi , Kartik Ramaswamy , Shahid Rauf
IPC分类号： G01R27/04
CPC分类号： G01R27/32 , G01R19/0061 , H05H1/0081
摘要： An RE voltage probe is adapted to have a long coaxial cable to permit a measuring device to be connected remotely from the probe without distorting the voltage measurement. An RF current probe is encapsulated in a conductive housing to permit its placement inside a plasma reactor chamber.
摘要翻译： RE电压探头适于具有长同轴电缆，以允许测量装置远离探头连接，而不会使电压测量失真。 RF电流探针被封装在导电壳体中以允许其放置在等离子体反应器室内。

5. 发明申请

US20110272709A1 RADIATION HEATING EFFICIENCY BY INCREASING OPTICAL ABSORPTION OF A SILICON CONTAINING MATERIAL 有权
标题翻译：通过增加光学吸收含硅材料的辐射加热效率
公开(公告)号：US20110272709A1
公开(公告)日：2011-11-10
申请号：US13093584
申请日：2011-04-25
申请人： HIROJI HANAWA , Kyawwin Jason Maung
发明人： HIROJI HANAWA , Kyawwin Jason Maung
IPC分类号： H01L33/60
CPC分类号： H01L21/67115 , H01L21/68771
摘要： Embodiments of the present invention generally provide a process and apparatus for increasing the absorption coefficient of a chamber component disposed in a thermal process chamber. In one embodiment, a method generally includes providing a substrate carrier having a first surface and a second surface, the first surface is configured to support a substrate and being parallel and opposite to the second surface, subjecting the second surface of the substrate carrier to a surface treatment process to roughen the second surface of the substrate carrier, wherein the substrate carrier contains a material comprising silicon carbide, and forming an oxide-containing layer on the roughened second surface of the substrate carrier. The formed oxide-containing layer has optical absorption properties at wavelengths close to the radiation delivered from one or more energy sources used to heat the chamber component.
摘要翻译：本发明的实施例通常提供一种用于增加设置在热处理室中的腔室部件的吸收系数的方法和装置。在一个实施例中，一种方法通常包括提供具有第一表面和第二表面的衬底载体，所述第一表面被配置为支撑衬底并且与第二表面平行且相对，使衬底载体的第二表面经受使基底载体的第二表面粗糙化的表面处理工艺，其中基底载体含有包含碳化硅的材料，并在基底载体的粗糙化的第二表面上形成含氧化物层。形成的含氧化物层在接近从用于加热室部件的一个或多个能量源递送的辐射的波长处具有光学吸收特性。

6. 发明授权

US07767561B2 Plasma immersion ion implantation reactor having an ion shower grid 失效
标题翻译：具有离子喷淋格栅的等离子体浸没离子注入反应器
公开(公告)号：US07767561B2
公开(公告)日：2010-08-03
申请号：US10896113
申请日：2004-07-20
申请人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
发明人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
IPC分类号： H01L21/425
CPC分类号： H01J37/32412 , C23C14/48 , H01J37/32357 , H01L21/2236 , H01L21/31612
摘要： A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural elongate orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid.
摘要翻译：用于在工件中以期望的离子注入深度分布植入选定物种的等离子体浸没离子注入工艺在反应室中进行，其中离子喷淋网格将室分成上部离子产生区域和下部工艺区域，具有相对于离子喷淋栅格的表面平行方向定向的多个细长孔的离子喷淋格栅。

7. 发明授权

US07642180B2 Semiconductor on insulator vertical transistor fabrication and doping process 有权
标题翻译：半导体绝缘体垂直晶体管的制造和掺杂过程
公开(公告)号：US07642180B2
公开(公告)日：2010-01-05
申请号：US11901969
申请日：2007-09-18
申请人： Amir Al-Bayati , Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Biagio Gallo , Andrew Nguyen
发明人： Amir Al-Bayati , Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Biagio Gallo , Andrew Nguyen
IPC分类号： H01L21/44
CPC分类号： H01J37/321 , H01L29/66795 , H01L29/66803 , H01L29/7843 , H01L29/785 , H01L29/78618
摘要： A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conformal deposition of a dopant-containing film which can then be heated to drive the dopants into the transistor. Some embodiments employ both conformal ion implantation and conformal deposition of dopant containing films, and in those embodiments in which the dopant containing film is a pure dopant, the ion implantation and film deposition can be performed simultaneously.
摘要翻译：通过绝缘体上半导体结构中的三维垂直晶体管的垂直和水平表面进行保形掺杂的工艺采用RF振荡环形等离子体电流来执行保形离子注入或含掺杂剂膜的共形沉积然后可以加热以将掺杂剂驱动到晶体管中。一些实施例采用包含掺杂剂的膜的共形离子注入和共形沉积，并且在其中含掺杂剂的膜是纯掺杂剂的那些实施例中，可以同时执行离子注入和膜沉积。

8. 发明申请

US20080257261A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20080257261A1
公开(公告)日：2008-10-23
申请号：US11738505
申请日：2007-04-22
申请人： Hiroji Hanawa , Andrew Nguyen , Keiji Horiaka , Kallol Bera , Kenneth S. Collins , Lawrence Wong , Martin Jeff Salinas , Roger Alan Lindley , Hong S. Yang
发明人： Hiroji Hanawa , Andrew Nguyen , Keiji Horiaka , Kallol Bera , Kenneth S. Collins , Lawrence Wong , Martin Jeff Salinas , Roger Alan Lindley , Hong S. Yang
IPC分类号： H05H1/00
CPC分类号： H01J37/3266 , H01J37/32623
摘要： Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a plasma control magnet assembly includes a plurality of magnets arranged in a predetermined pattern that generate a magnetic field having a strength greater than 10 Gauss in a region proximate the assembly and less than 10 Gauss in a region remote from the assembly.
摘要翻译：本发明的实施例涉及等离子体处理装置及其使用方法。在一些实施例中，等离子体控制磁体组件包括以预定图案布置的多个磁体，其在靠近组件的区域中产生强度大于10高斯的磁场，并且在远离组件的区域中小于10高斯。

9. 发明申请

US20080179181A1 METHOD OF PROCESSING A WORKPIECE IN A PLASMA REACTOR WITH VARIABLE HEIGHT GROUND RETURN PATH TO CONTROL PLASMA ION DENSITY UNIFORMITY 有权
标题翻译：在具有可变高度接地返回路径的等离子体反应器中处理工件的方法来控制等离子体密度均匀性
公开(公告)号：US20080179181A1
公开(公告)日：2008-07-31
申请号：US11733984
申请日：2007-04-11
申请人： KENNETH S. COLLINS , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： KENNETH S. COLLINS , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： H05H1/00
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32165
摘要： A method for processing a workpiece in a plasma reactor chamber includes coupling RF power at a first VHF frequency f1 to a plasma via one of the electrodes of the chamber, and providing a center ground return path for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequency f1. The method further includes providing a variable height edge ground annular element and providing a ground return path through the edge ground annular element for the frequency f1. The method controls the uniformity of plasma ion density distribution by controlling the distance between the variable height edge ground annular element and one of: (a) height of ceiling electrode or (b) height of workpiece support electrode.
摘要翻译：用于在等离子体反应器室中处理工件的方法包括通过室的电极之一将RFF功率以第一VHF频率f 1耦合到等离子体，并且提供用于RF电流的中心接地返回路径，其直接通过天花板电极工件支撑电极为频率f 1。该方法还包括提供可变高度边缘接地环形元件，并为频率f 1提供通过边缘接地环形元件的接地返回路径。该方法通过控制可变高度边缘接地环形元件之间的距离和（a）天花板电极的高度或（b）工件支撑电极的高度来控制等离子体离子密度分布的均匀性。

10. 发明申请

US20080179008A1 REACTOR FOR WAFER BACKSIDE POLYMER REMOVAL USING AN ETCH PLASMA FEEDING A LOWER PROCESS ZONE AND A SCAVENGER PLASMA FEEDING AN UPPER PROCESS ZONE 审中-公开
标题翻译：使用等离子体等离子体进行离散聚合物的反应器下一个工艺区域和SCAVENGER等离子体进料上一个工艺区域
公开(公告)号：US20080179008A1
公开(公告)日：2008-07-31
申请号：US11685772
申请日：2007-03-14
申请人： Kenneth S. Collins , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorov , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
发明人： Kenneth S. Collins , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorov , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
IPC分类号： H01L21/306
CPC分类号： H01L21/68764 , H01J37/32357 , H01J37/32366 , H01L21/67069 , H01L21/67115 , H01L21/68728
摘要： A reactor is provided for removing polymer from a backside of a workpiece. The reactor includes a vacuum chamber having a ceiling, a floor and a cylindrical side wall. A workpiece support apparatus within the chamber is configured to support a workpiece thereon, so that the workpiece has its front side facing the ceiling. The support apparatus leaves at least an annular periphery of the backside of the workpiece exposed. A confinement member defines a narrow gap with the outer edge of the workpiece, the narrow gap being on the order of about 1% of workpiece diameter, the narrow gap corresponding to a boundary dividing the chamber between an upper process zone and a lower process zone. A vacuum pump is coupled to the lower process zone. A lower external plasma-generating chamber introduces a plasma by-product into the lower process zone and a supply of a polymer etch precursor gas coupled to the lower external plasma-generating chamber. An upper external plasma-generating chamber is coupled to introduce a plasma by-product into the upper process zone and a supply of a scavenger species precursor gas coupled to the upper external plasma-generating chamber.
摘要翻译：提供反应器用于从工件的背面去除聚合物。反应器包括具有天花板，地板和圆柱形侧壁的真空室。室内的工件支撑装置构造成在其上支撑工件，使得工件的前侧面向天花板。支撑装置离开被暴露的工件的背面的至少一个环形周边。约束构件与工件的外边缘限定窄间隙，窄间隙约为工件直径的约1％，窄间隙对应于在上加工区和下加工区之间划分腔室的边界。真空泵联接到下部处理区。较低的外部等离子体发生室将等离子体副产物引入下部工艺区域中，并且提供耦合到下部外部等离子体产生室的聚合物蚀刻前体气体。耦合上部外部等离子体产生室以将等离子体副产物引入上部工艺区域中，并且供应与上部外部等离子体产生室耦合的清除剂物质前体气体。

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