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    • 14. 发明授权
    • Critical dimension controlled method of plasma descum for conventional quarter micron and smaller dimension binary mask manufacture
    • 用于常规四分之一微米和较小维二进制掩模制造的等离子体除垢的关键尺寸控制方法
    • US06309976B1
    • 2001-10-30
    • US09272532
    • 1999-03-22
    • Tzy-Ying LinCheng-Lung DuanTsung-Wen Tien
    • Tzy-Ying LinCheng-Lung DuanTsung-Wen Tien
    • H01L21302
    • G03F1/68G03F1/80
    • A method of forming a mask from a metal layer deposited upon a substrate patterned for exposure of a workpiece to radiation of a specific range of wavelengths with the substrate being transparent to the radiation comprises the following steps. Form the metal layer superjacent to the substrate. Form a photoresist layer superjacent to the metal layer. Expose the photoresist layer to a pattern. Develop the photoresist to Form a photoresist mask with an opening therethrough. Bake the photoresist mask, the metal layer and the substrate. Perform a descum operation. Perform an isotropic etching of the metal layer through the opening in the mask. Perform an after etching inspection measurement. Strip the photoresist mask. Perform an after stripping inspection measurement. The isotropic etching is performed with a wet etchant. The descum operation is performed with a dry plasma process including oxygen and nitrogen gases and an inert gas selected from argon and helium.
    • 从沉积在被图案化的衬底上的金属层形成掩模的方法,其中所述衬底被图案化以将工件暴露于特定波长范围的辐射,其中衬底对辐射是透明的,包括以下步骤。 形成与衬底相邻的金属层。 形成与金属层相邻的光致抗蚀剂层。 将光致抗蚀剂层暴露于图案。 开发光致抗蚀剂以形成具有开口的光致抗蚀剂掩模。 烘烤光刻胶掩模,金属层和基材。 执行除法操作。 通过掩模中的开口进行金属层的各向同性蚀刻。 进行蚀刻检查测量。 剥去光刻胶掩模。 进行剥离检查测量。 用湿蚀刻剂进行各向同性蚀刻。 除氧操作通过包括氧气和氮气的干等离子体工艺和选自氩气和氦气的惰性气体进行。