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11. 发明授权

US09620637B2 Semiconductor device comprising a gate electrode connected to a source terminal 有权
公开(公告)号：US09620637B2
公开(公告)日：2017-04-11
申请号：US13902151
申请日：2013-05-24
申请人： Infineon Technologies AG
发明人： Andreas Meiser , Till Schloesser , Franz Hirler
IPC分类号： H01L29/76 , H01L29/78 , H01L29/94 , H01L31/113 , H01L27/115 , H01L21/28 , H01L23/48 , H01L29/88 , H01L29/66 , H01L29/739
CPC分类号： H01L29/7813 , H01L29/66204 , H01L29/66734 , H01L29/7391
摘要： A semiconductor device formed in a semiconductor substrate includes a source region, a drain region, a gate electrode, and a body region disposed between the source region and the drain region. The gate electrode is disposed adjacent at least two sides of the body region, and the source region and the gate electrode are coupled to a source terminal. A width of the body region between the two sides of the body region is selected so that the body region is configured to be fully depleted.

12. 发明申请

US20160322347A1 Switch Comprising a Field Effect Transistor and Integrated Circuit 审中-公开
标题翻译：包含场效应晶体管和集成电路的开关
公开(公告)号：US20160322347A1
公开(公告)日：2016-11-03
申请号：US15139800
申请日：2016-04-27
申请人： Infineon Technologies AG
发明人： Andreas Meiser , Till Schloesser
IPC分类号： H01L27/06 , H05B37/02 , H05B33/08 , H02M3/155 , H05B1/02
摘要： A switch comprises a field effect transistor in a semiconductor substrate having a first main surface. The field effect transistor comprises a source region, a drain region, a body region, and a gate electrode at the body region, the gate electrode being configured to control a conductivity of a channel formed in the body region. The gate electrode is disposed in gate trenches. The body region is disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The body region has a shape of a ridge extending along the first direction. The body region is adjacent to the source region and the drain region. The switch further comprises a source contact and a body contact portion, the source contact being electrically connected to a source terminal. The body contact portion is in contact with the source contact and is electrically connected to the body region.
摘要翻译：开关包括具有第一主表面的半导体衬底中的场效应晶体管。场效应晶体管包括源区域，漏极区域，体区域和在体区域处的栅电极，栅电极被配置为控制在体区域中形成的沟道的导电性。栅电极设置在栅极沟槽中。主体区域沿着源极区域和漏极区域之间的第一方向设置，第一方向平行于第一主表面。身体区域具有沿着第一方向延伸的脊的形状。体区域与源极区域和漏极区域相邻。该开关还包括源极接触部和主体接触部，该源极接触部电连接到源极端子。身体接触部分与源极接触部分接触并且与身体区域电连接。

13. 发明申请

US20160307891A1 Semiconductor Device Comprising a Transistor Including a Body Contact Portion and Method for Manufacturing the Semiconductor Device 审中-公开
标题翻译：包括体接触部分的晶体管的半导体器件和用于制造半导体器件的方法
公开(公告)号：US20160307891A1
公开(公告)日：2016-10-20
申请号：US15096629
申请日：2016-04-12
申请人： Infineon Technologies AG
发明人： Andreas Meiser , Till Schloesser
IPC分类号： H01L27/088 , H01L29/78 , H01L29/10 , H01L29/40 , H01L29/417
CPC分类号： H01L29/4175 , H01L21/26586 , H01L29/0696 , H01L29/0865 , H01L29/1083 , H01L29/1095 , H01L29/41766 , H01L29/41775 , H01L29/66696 , H01L29/66704 , H01L29/7825
摘要： A semiconductor device comprises a transistor in a semiconductor body having a main surface. The transistor comprises a source region, a drain region, a body region, a drift zone, and a gate electrode at the body region. The body region and the drift zone are disposed along a first direction between the source region and the drain region, the first direction being parallel to the main surface. The gate electrode is disposed in a trench extending in the first direction. The semiconductor device further comprises a source contact electrically connected to the source region and to a source terminal. The source contact is disposed in a source contact opening in the main surface. The semiconductor device further comprises a body contact portion electrically connected to the source terminal and to the body region. The body contact portion vertically overlaps with the source region.
摘要翻译：半导体器件包括具有主表面的半导体本体中的晶体管。晶体管包括源区域，漏极区域，体区域，漂移区域和在身体区域处的栅电极。主体区域和漂移区域沿着源极区域和漏极区域之间的第一方向设置，第一方向平行于主表面。栅电极设置在沿第一方向延伸的沟槽中。半导体器件还包括电源连接到源极区域和源极端子的源极触点。源触点设置在主表面中的源极接触开口中。半导体器件还包括电连接到源极端子和主体区域的主体接触部分。身体接触部垂直与源区重叠。

14. 发明申请

US20160268423A1 Semiconductor Device, Integrated Circuit and Method of Manufacturing a Semiconductor Device 有权
标题翻译：半导体器件，集成电路和制造半导体器件的方法
公开(公告)号：US20160268423A1
公开(公告)日：2016-09-15
申请号：US14656041
申请日：2015-03-12
申请人： Infineon Technologies AG
发明人： Karoline Koepp , Andreas Meiser , Till Schloesser
IPC分类号： H01L29/78 , H01L29/40 , H01L27/088
CPC分类号： H01L29/7825 , H01L21/823456 , H01L21/823481 , H01L21/823487 , H01L27/088 , H01L29/0692 , H01L29/0696 , H01L29/407 , H01L29/4236 , H01L29/66681 , H01L29/7813 , H01L29/7823 , H01L29/7835
摘要： A semiconductor device includes a transistor in a semiconductor substrate having a first main surface. The transistor includes a source region, a drain region, a channel region, a drift zone, and a gate electrode adjacent to at least two sides of the channel region. The gate electrode is disposed in trenches extending in a first direction parallel to the first main surface. The gate electrode is electrically coupled to a gate terminal. The channel region and the drift zone are disposed along the first direction between the source region and the drain region. The semiconductor device further includes a conductive layer beneath the gate electrode and insulated from the gate electrode. The conductive layer is electrically connected to the gate terminal.
摘要翻译：半导体器件包括具有第一主表面的半导体衬底中的晶体管。晶体管包括源极区域，漏极区域，沟道区域，漂移区域和与沟道区域的至少两侧相邻的栅电极。栅电极设置在与第一主表面平行的第一方向上延伸的沟槽中。栅极电连接到栅极端子。沟道区域和漂移区沿着源极区域和漏极区域之间的第一方向设置。半导体器件还包括在栅电极下方并与栅电极绝缘的导电层。导电层电连接到栅极端子。

15. 发明授权

US09401399B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09401399B2
公开(公告)日：2016-07-26
申请号：US14053633
申请日：2013-10-15
申请人： Infineon Technologies AG
发明人： Andreas Meiser , Till Schloesser , Franz Hirler
IPC分类号： H01L29/76 , H01L29/94 , H01L27/108 , H01L29/423 , H01L29/78 , H01L29/06 , H01L29/808 , H01L29/40 , H01L29/417 , H01L29/10
CPC分类号： H01L29/7813 , H01L27/088 , H01L29/0653 , H01L29/0692 , H01L29/0696 , H01L29/0865 , H01L29/0882 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/78 , H01L29/7811 , H01L29/7825 , H01L29/7835 , H01L29/7838 , H01L29/8083
摘要： A semiconductor device includes a transistor formed in a semiconductor substrate including a main surface. The transistor includes a source region, a drain region, a channel region, and a gate electrode. The source region and the drain region are disposed along a first direction, the first direction being parallel to the main surface. The channel region has a shape of a ridge extending along the first direction, the ridge including a top side and a first and a second sidewalls. The gate electrode is disposed at the first sidewall of the channel region, and the gate electrode is absent from the second sidewall of the channel region.
摘要翻译：半导体器件包括形成在包括主表面的半导体衬底中的晶体管。晶体管包括源极区，漏极区，沟道区和栅电极。源极区域和漏极区域沿着第一方向设置，第一方向平行于主表面。沟道区具有沿着第一方向延伸的脊的形状，脊包括顶侧和第一和第二侧壁。栅电极设置在沟道区的第一侧壁处，栅电极不存在于沟道区的第二侧壁。

16. 发明授权

US09351382B2 Device having a plurality of driver circuits to provide a current to a plurality of loads and method of manufacturing the same 有权
公开(公告)号：US09351382B2
公开(公告)日：2016-05-24
申请号：US14835491
申请日：2015-08-25
申请人： Infineon Technologies AG
发明人： Andrea Logiudice , Andreas Meiser
IPC分类号： H01L29/66 , H05B37/03 , H05B33/08 , G09G3/00
CPC分类号： H05B37/03 , G09G3/006 , H01L33/0095 , H05B33/0824 , H05B33/083 , Y10T29/49117 , Y10T307/406
摘要： In various embodiments, a device is provided. The device includes a substrate having a first side and a second side opposite the first side. The substrate includes a plurality of driver circuits at the first side of the substrate. Each of the plurality of driver circuits is configured to drive a current from the first side of the substrate to the second side of the substrate. The device further includes at least one load interface at the second side of the substrate. The at least one load interface is configured to couple the current from the plurality of the driver circuits to a plurality of loads at the second side of the substrate.

17. 发明授权

US09306058B2 Integrated circuit and method of manufacturing an integrated circuit 有权
标题翻译：集成电路和集成电路制造方法
公开(公告)号：US09306058B2
公开(公告)日：2016-04-05
申请号：US14043971
申请日：2013-10-02
申请人： Infineon Technologies AG
发明人： Martin Vielemeyer , Andreas Meiser , Till Schloesser , Franz Hirler , Martin Poelzl
IPC分类号： H01L29/78 , H01L29/66
CPC分类号： H01L29/1083 , H01L21/26506 , H01L21/26586 , H01L21/2822 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/4238 , H01L29/66681 , H01L29/66696 , H01L29/66704 , H01L29/7816 , H01L29/7825
摘要： An integrated circuit includes a transistor in a semiconductor substrate having a main surface. The transistor includes a source region, a drain region, a channel region, a drift zone, a gate electrode, and a gate dielectric adjacent to the gate electrode. The gate electrode is disposed adjacent to at least two sides of the channel region. The channel region and the drift zone are disposed along a first direction parallel to the main surface between the source region and the drain region. The gate dielectric has a thickness that varies at different positions of the gate electrode.
摘要翻译：集成电路包括具有主表面的半导体衬底中的晶体管。晶体管包括源极区，漏极区，沟道区，漂移区，栅电极和与栅电极相邻的栅极电介质。栅电极设置成与沟道区域的至少两侧相邻。沟道区域和漂移区域沿着平行于源极区域和漏极区域之间的主表面的第一方向设置。栅极电介质具有在栅电极的不同位置处变化的厚度。

18. 发明申请

US20160093731A1 Method of Manufacturing a Semiconductor Device and Semiconductor Device 有权
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US20160093731A1
公开(公告)日：2016-03-31
申请号：US14868909
申请日：2015-09-29
申请人： Infineon Technologies AG
发明人： Andreas Meiser , Till Schloesser
IPC分类号： H01L29/78 , H01L29/66 , H01L29/417 , H01L21/265 , H01L29/40 , H01L29/10
CPC分类号： H01L29/7825 , H01L21/26513 , H01L21/26586 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/66696 , H01L29/66704 , H01L29/7835
摘要： A method of manufacturing a semiconductor device including a transistor comprises forming field plate trenches in a main surface of a semiconductor substrate, a drift zone being defined between adjacent field plate trenches, forming a field dielectric layer in the field plate trenches, thereafter, forming gate trenches in the main surface of the semiconductor substrate, a channel region being defined between adjacent gate trenches, and forming a conductive material in at least some of the field plate trenches and in at least some of the gate trenches. The method further comprising forming a source region and forming a drain region in the main surface of the semiconductor substrate.
摘要翻译：制造包括晶体管的半导体器件的方法包括在半导体衬底的主表面中形成场板沟槽，在相邻的场板沟槽之间限定漂移区，在场板栅沟中形成场介电层，之后形成栅极在半导体衬底的主表面中的沟槽，沟道区域被限定在相邻栅极沟槽之间，并且在至少一些场板沟槽和至少一些栅极沟槽中形成导电材料。该方法还包括形成源极区域并在半导体衬底的主表面中形成漏极区域。

19. 发明申请

US20160052776A1 MEMS DEVICE 审中-公开
标题翻译： MEMS器件
公开(公告)号：US20160052776A1
公开(公告)日：2016-02-25
申请号：US14885255
申请日：2015-10-16
申请人： Infineon Technologies AG
发明人： Stefan Kolb , Andreas Meiser , Till Schloesser , Wolfgang Werner
IPC分类号： B81B3/00 , B81C1/00
CPC分类号： B81B3/0021 , B81B3/0086 , B81B2201/0207 , B81B2201/0235 , B81B2201/0264 , B81B2201/0292 , B81B2203/0118 , B81B2203/0307 , B81B2203/04 , B81C1/0015 , G01H1/00 , G01H11/06 , G01L9/0072 , G01L9/12 , G01N27/223 , G01P15/125
摘要： A MEMS device includes a fixed electrode and a movable electrode arranged isolated and spaced from the fixed electrode by a distance. The movable electrode is suspended against the fixed electrode by one or more spacers including an insulating material, wherein the movable electrode is laterally affixed to the one or more spacers.
摘要翻译： MEMS器件包括固定电极和可移动电极，与固定电极隔离并间隔一定距离。可移动电极通过一个或多个包括绝缘材料的间隔件悬置在固定电极上，其中可动电极横向地固定到一个或多个间隔件上。

20. 发明申请

US20160049296A1 METHOD FOR FORMING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：形成半导体器件的方法
公开(公告)号：US20160049296A1
公开(公告)日：2016-02-18
申请号：US14920379
申请日：2015-10-22
申请人： Infineon Technologies AG
发明人： Hans-Joachim Schulze , Markus Zundel , Anton Mauder , Andreas Meiser , Franz Hirler , Hans Weber
IPC分类号： H01L21/02 , H01L29/66 , H01L21/265
CPC分类号： H01L21/02258 , H01L21/02164 , H01L21/02233 , H01L21/02238 , H01L21/02299 , H01L21/02345 , H01L21/26506 , H01L21/26513 , H01L21/32105 , H01L29/66325 , H01L29/66477
摘要： A method for forming a semiconductor device includes carrying out an anodic oxidation of a surface region of a semiconductor substrate to form an oxide layer at a surface of the semiconductor substrate by generating an attracting electrical field between the semiconductor substrate and an external electrode within an electrolyte to attract oxidizing ions of the electrolyte, causing an oxidation of the surface region of the semiconductor substrate. Further, the method includes reducing the number of remaining oxidizing ions within the oxide layer, while the semiconductor substrate is within an electrolyte.
摘要翻译：一种形成半导体器件的方法包括：通过在半导体衬底和半导体衬底内的外部电极之间产生吸引电场，在半导体衬底的表面上进行半导体衬底的表面区域的阳极氧化以形成氧化物层以吸引电解质的氧化离子，引起半导体衬底的表面区域的氧化。此外，该方法包括减少氧化物层内剩余氧化离子的数量，同时半导体衬底在电解质内。

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