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11. 发明授权

US09437758B2 Photoelectric conversion device 有权
标题翻译：光电转换装置
公开(公告)号：US09437758B2
公开(公告)日：2016-09-06
申请号：US13398872
申请日：2012-02-17
申请人： Shunpei Yamazaki , Fumito Isaka , Jiro Nishida
发明人： Shunpei Yamazaki , Fumito Isaka , Jiro Nishida
IPC分类号： H01L31/00 , H01L31/0236 , H01L31/028 , H01L31/068 , H01L31/056
CPC分类号： H01L31/02363 , H01L31/028 , H01L31/056 , H01L31/068 , Y02E10/52 , Y02E10/547
摘要： A photoelectric conversion device in photoelectric conversion in a light-absorption region in a crystalline silicon substrate is efficiently performed is provided. In the photoelectric conversion device, a light-transmitting conductive film which has a high effect of passivation of defects on a silicon surface and improves the reflectance on a back electrode side is provided between the back electrode and the crystalline silicon substrate, The light-transmitting conductive film includes an organic compound and an inorganic compound. The organic compound includes 4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine. The inorganic compound includes an oxide of a metal belonging to any of Groups 4 to 8 of the periodic table.
摘要翻译：提供了一种在晶体硅衬底中的光吸收区域中进行光电转换的光电转换装置。在光电转换装置中，在背面电极和结晶硅基板之间设置有具有高的硅表面上的缺陷钝化和提高背面电极侧的反射率的透光性导电膜。透光性导电膜包括有机化合物和无机化合物。有机化合物包括4-苯基-4' - （9-苯基芴-9-基）三苯胺。无机化合物包括属于周期表第4至8族中任何一种的金属的氧化物。

12. 发明授权

US09401247B2 Negative electrode for power storage device and power storage device 有权
标题翻译：蓄电装置负极及蓄电装置
公开(公告)号：US09401247B2
公开(公告)日：2016-07-26
申请号：US13613874
申请日：2012-09-13
申请人： Ryota Tajima , Shunpei Yamazaki , Hideomi Suzawa , Takeshi Osada
发明人： Ryota Tajima , Shunpei Yamazaki , Hideomi Suzawa , Takeshi Osada
IPC分类号： H01M4/02 , H01M4/13 , H01G11/30 , B82Y30/00 , H01M4/62 , H01M4/134 , H01M4/38 , H01G11/26 , H01G11/66 , H01M10/0525
CPC分类号： H01G11/30 , B82Y30/00 , H01G11/26 , H01G11/66 , H01M4/13 , H01M4/134 , H01M4/386 , H01M4/62 , H01M4/625 , H01M10/0525 , Y02E60/122 , Y02E60/13 , Y02P70/54 , Y02T10/7011 , Y02T10/7022
摘要： Provided is a negative electrode for a power storage device in which charge/discharge capacity is high and deterioration in battery characteristics due to charge/discharge is small. The negative electrode for a power storage device includes a negative electrode active material having a plurality of protrusions and a bar which serves as a connecting bridge over a first protrusion and a second protrusion among the plurality of protrusions. The bar is provided in a direction perpendicular to a direction in which a current collector is bent. An axis of the first protrusion and an axis of the second protrusion are oriented in the same direction. Further, a graphene covering a side surface of the protrusion or covering the side surface of the protrusion and a top surface of the bar may be provided.
摘要翻译：提供了一种蓄电装置的负极，其充放电容量高，充放电引起的电池特性的劣化小。蓄电装置用负极包括具有多个突起的负极活性物质和作为多个突起之间的第一突起和第二突起的连接桥的棒。该杆沿垂直于集电体弯曲方向的方向设置。第一突起的轴线和第二突起的轴线朝向相同的方向。此外，可以提供覆盖突起的侧表面或覆盖突起的侧表面和条的顶表面的石墨烯。

13. 发明授权

US09384439B2 Semiconductor device and communication system 有权
标题翻译：半导体器件和通信系统
公开(公告)号：US09384439B2
公开(公告)日：2016-07-05
申请号：US11596806
申请日：2005-06-10
申请人： Shunpei Yamazaki , Kiyoshi Kato
发明人： Shunpei Yamazaki , Kiyoshi Kato
IPC分类号： G06K19/06 , G06K19/077 , H01L27/12
CPC分类号： H01L27/1218 , G02F1/13338 , G02F1/1368 , G06K7/10217 , G06K19/07749 , H01L23/66 , H01L24/32 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/1266 , H01L29/78678 , H01L29/78696 , H01L2223/6677 , H01L2224/32225 , H01L2924/13069 , H01L2924/141 , H01L2924/1432 , H01L2924/1579
摘要： It is an object of the present invention to provide a semiconductor device in which a sophisticated integrated circuit using a polycrystalline semiconductor is formed over a substrate which is weak with heat such as a plastic substrate or a plastic film substrate and a semiconductor device which transmits/receives power or a signal without wires, and a communication system thereof. One feature of the invention is that a semiconductor device, specifically, a processor, in which a sophisticated integrated circuit is fixed to a plastic substrate which is weak with heat by a stripping method such as a stress peel of process method to transmit/receive power or a signal without wires, for example, with an antenna or a light receiving element.
摘要翻译：本发明的目的是提供一种半导体器件，其中使用多晶半导体的复杂集成电路形成在诸如塑料基板或塑料薄膜基板的热弱的基板上，并且半导体器件透射/ 接收电力或没有电线的信号，以及其通信系统。本发明的一个特征在于，一种半导体装置，特别是一种处理器，其中一个复杂的集成电路固定在一个塑料基板上，该塑料基板通过诸如剥离方法的热而被加热，该剥离方法用于传递/接收电力或没有电线的信号，例如具有天线或光接收元件。

14. 发明授权

US09349750B2 Semiconductor device and display device 有权
标题翻译：半导体器件和显示器件
公开(公告)号：US09349750B2
公开(公告)日：2016-05-24
申请号：US14077390
申请日：2013-11-12
申请人： Hiroyuki Miyake , Shunpei Yamazaki , Yoshifumi Tanada , Manabu Sato , Toshinari Sasaki , Kenichi Okazaki , Junichi Koezuka , Takuya Matsuo , Hiroshi Matsukizono , Yosuke Kanzaki , Shigeyasu Mori
发明人： Hiroyuki Miyake , Shunpei Yamazaki , Yoshifumi Tanada , Manabu Sato , Toshinari Sasaki , Kenichi Okazaki , Junichi Koezuka , Takuya Matsuo , Hiroshi Matsukizono , Yosuke Kanzaki , Shigeyasu Mori
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L27/1225 , H01L27/124 , H01L29/78648
摘要： A semiconductor device includes: a transistor including a gate electrode, a gate insulating film over the gate electrode, a semiconductor layer over the gate insulating film, and a source electrode and a drain electrode over the semiconductor layer; a first insulating film comprising an inorganic material over the transistor; a second insulating film comprising an organic material over the first insulating film; a first conductive film over the second insulating film and in a region overlapping with the semiconductor layer; a third insulating film comprising an inorganic material over the first conductive film; and a second conductive film over the third insulating film and in a region overlapping with the first conductive film. The absolute value of a first potential applied to the first conductive film is greater than the absolute value of a second potential applied to the second conductive film.
摘要翻译：半导体器件包括：晶体管，包括栅极电极，栅极上的栅极绝缘膜，栅极绝缘膜上的半导体层，以及半导体层上的源极和漏极; 包括晶体管上的无机材料的第一绝缘膜; 包括在所述第一绝缘膜上的有机材料的第二绝缘膜; 在所述第二绝缘膜上并且在与所述半导体层重叠的区域中的第一导电膜; 在所述第一导电膜上包括无机材料的第三绝缘膜; 以及在所述第三绝缘膜上并且在与所述第一导电膜重叠的区域中的第二导电膜。施加到第一导电膜的第一电位的绝对值大于施加到第二导电膜的第二电位的绝对值。

15. 发明授权

US09343517B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US09343517B2
公开(公告)日：2016-05-17
申请号：US13020216
申请日：2011-02-03
申请人： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Rihito Wada , Yoko Chiba
发明人： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Rihito Wada , Yoko Chiba
IPC分类号： H01L31/00 , H01L27/32 , G02F1/1345 , H01L27/12 , H01L29/417 , H01L29/786 , H01L29/66 , H01L51/52
CPC分类号： H01L27/1225 , G02F1/13392 , G02F1/13458 , G02F2001/13398 , G09G2300/0804 , H01L27/124 , H01L27/3262 , H01L27/3276 , H01L29/04 , H01L29/24 , H01L29/41733 , H01L29/66969 , H01L29/7869 , H01L51/5221
摘要： A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.
摘要翻译：显示装置包括其中像素电极层布置在矩阵中的像素部分，并且相应于像素电极设置具有至少两种具有不同量的氧的氧化物半导体层的组合的倒置交错薄膜晶体管层。在该显示装置的像素部的周围，设置有通过与像素电极层相同的材料形成的导电层与形成在对置基板上的公共电极层电连接的焊盘部。通过提供适合于设置在显示面板中的焊盘部分的结构，实现了本发明防止由于各种显示装置中的薄膜分离引起的缺陷的一个反对意见。

16. 发明授权

US09331306B2 Organic optical device and protective component of organic optical device 有权
标题翻译：有机光学器件和有机光学器件的保护元件
公开(公告)号：US09331306B2
公开(公告)日：2016-05-03
申请号：US13302213
申请日：2011-11-22
申请人： Shunpei Yamazaki , Hisao Ikeda , Kengo Akimoto
发明人： Shunpei Yamazaki , Hisao Ikeda , Kengo Akimoto
IPC分类号： H01L51/52 , H01L27/32
CPC分类号： H01L51/5253 , H01L27/3258 , H01L51/5275
摘要： An organic optical device which can suppress deterioration due to moisture or an impurity is provided. An organic optical device includes a supporting body, a functional layer provided over the supporting body, and a light-emitting body containing an organic compound provided over the functional layer. The functional layer includes an insulating film containing gallium or aluminum, zinc, and oxygen. The supporting body and the functional layer each have a property of transmitting light with a wavelength of greater than or equal to 400 nm and less than or equal to 700 nm. By using the insulating film containing gallium or aluminum, zinc, and oxygen as a protective film, entry of moisture or an impurity into an organic compound or a metal material can be suppressed.
摘要翻译：提供了能够抑制由于水分或杂质引起的劣化的有机光学元件。有机光学器件包括支撑体，设置在支撑体上的功能层，以及包含设置在功能层上的有机化合物的发光体。功能层包括含有镓或铝，锌和氧的绝缘膜。支撑体和功能层各自具有透射波长大于或等于400nm且小于或等于700nm的光的性质。通过使用含有镓或铝，锌和氧的绝缘膜作为保护膜，可以抑制水分或杂质进入有机化合物或金属材料。

17. 发明授权

US09305481B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US09305481B2
公开(公告)日：2016-04-05
申请号：US12887179
申请日：2010-09-21
申请人： Jun Koyama , Shunpei Yamazaki
发明人： Jun Koyama , Shunpei Yamazaki
IPC分类号： G09G5/00 , G09G3/20 , G02F1/1345
CPC分类号： H01L27/1225 , G02F1/1345 , G02F1/1368 , G09G3/20 , G09G2310/0275 , H01L27/124 , H01L27/3262 , H01L27/3276 , H01L29/7869
摘要： A display device includes a driver circuit including a logic circuit including a first transistor which is a depletion type transistor and a second transistor which is an enhancement type transistor; a signal line which is electrically connected to the driver circuit; a pixel portion including a pixel whose display state is controlled by input of a signal including image data from the driver circuit through the signal line; a reference voltage line to which reference voltage is applied; and a third transistor which is a depletion type transistor and controls electrical connection between the signal line and the reference voltage line. The first to the third transistors each include an oxide semiconductor layer including a channel formation region.
摘要翻译：显示装置包括驱动电路，该驱动电路包括逻辑电路，该逻辑电路包括作为耗尽型晶体管的第一晶体管和作为增强型晶体管的第二晶体管; 电连接到驱动电路的信号线; 包括像素的像素，所述像素的显示状态通过输入来自所述驱动电路的通过所述信号线的图像数据的信号进行控制; 施加参考电压的参考电压线; 以及第三晶体管，其是耗尽型晶体管，并控制信号线与参考电压线之间的电连接。第一至第三晶体管各自包括包括沟道形成区的氧化物半导体层。

18. 发明授权

US09257594B2 Thin film transistor with an oxide semiconductor layer 有权
标题翻译：具有氧化物半导体层的薄膜晶体管
公开(公告)号：US09257594B2
公开(公告)日：2016-02-09
申请号：US12553119
申请日：2009-09-03
申请人： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi
发明人： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi
IPC分类号： H01L29/10 , H01L33/00 , H01L27/12 , H01L29/786 , H01L29/66
CPC分类号： H01L33/0041 , H01L27/1225 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： An object is to provide a semiconductor device including a thin film transistor with excellent electrical characteristics and high reliability and a method for manufacturing the semiconductor device with high mass productivity. A main point is to form a low-resistance oxide semiconductor layer as a source or drain region after forming a drain or source electrode layer over a gate insulating layer and to form an oxide semiconductor film thereover as a semiconductor layer. It is preferable that an oxygen-excess oxide semiconductor layer be used as a semiconductor layer and an oxygen-deficient oxide semiconductor layer be used as a source region and a drain region.
摘要翻译：本发明的目的是提供一种包括具有优异的电特性和高可靠性的薄膜晶体管的半导体器件以及用于制造具有高质量生产率的半导体器件的方法。要点是在栅极绝缘层上形成漏极或源电极层之后形成作为源极或漏极区的低电阻氧化物半导体层，并在其上形成作为半导体层的氧化物半导体膜。优选使用氧 - 过量氧化物半导体层作为半导体层，并且使用缺氧氧化物半导体层作为源极区和漏极区。

19. 发明授权

US09214474B2 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US09214474B2
公开(公告)日：2015-12-15
申请号：US13535506
申请日：2012-06-28
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L29/78 , H01L27/12 , H01L29/786
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/7782 , H01L29/78603 , H01L29/78696
摘要： To provide a transistor including an oxide semiconductor layer and having electric characteristics required depending on an intended use and provide a semiconductor device including the transistor, in a transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating film, and a gate electrode are stacked in this order over an oxide semiconductor insulating film, an oxide semiconductor stack layer which includes at least two oxide semiconductor layers with energy gaps different from each other and a mixed region therebetween is used as the semiconductor layer.
摘要翻译：为了提供一种包括氧化物半导体层并且具有根据预期用途需要的电特性的晶体管，并且在包括半导体层，源极和漏极电极层，栅极绝缘膜和栅电极依次堆叠在氧化物半导体绝缘膜上，氧化物半导体堆叠层，其包括具有彼此不同的能隙的至少两个氧化物半导体层以及它们之间的混合区域作为半导体层。

20. 发明授权

US09196739B2 Semiconductor device including oxide semiconductor film and metal oxide film 有权
标题翻译：包括氧化物半导体膜和金属氧化物膜的半导体器件
公开(公告)号：US09196739B2
公开(公告)日：2015-11-24
申请号：US13074635
申请日：2011-03-29
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/78606
摘要： A transistor is provided in which the top surface portion of an oxide semiconductor film is provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film, and an insulating film containing a different constituent from the metal oxide film and the oxide semiconductor film is formed in contact with a surface of the metal oxide film, which is opposite to the surface in contact with the oxide semiconductor film. In addition, the oxide semiconductor film used for the active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) through heat treatment in which impurities such as hydrogen, moisture, hydroxyl, and hydride are removed from the oxide semiconductor and oxygen which is one of main component materials of the oxide semiconductor is supplied and is also reduced in a step of removing the impurities.
摘要翻译：提供了一种晶体管，其中氧化物半导体膜的顶表面部分设置有含有与氧化物半导体膜类似的组成的金属氧化物膜，以及含有与金属氧化物膜和氧化物不同的成分的绝缘膜半导体膜形成为与与氧化物半导体膜接触的表面相反的金属氧化物膜的表面接触。此外，用于晶体管的有源层的氧化物半导体膜是通过热处理而被高度纯化成电i型（本征的）的氧化物半导体膜，其中从其中去除诸如氢，水分，羟基和氢化物的杂质供给作为氧化物半导体的主要成分材料之一的氧化物半导体和氧，并且在除去杂质的工序中还可以进行还原。

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