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1. 发明授权

US09935202B2 Transistor and display device comprising oxide semiconductor layer 有权
公开(公告)号：US09935202B2
公开(公告)日：2018-04-03
申请号：US13528009
申请日：2012-06-20
申请人： Shunpei Yamazaki , Masayuki Sakakura , Ryosuke Watanabe , Junichiro Sakata , Kengo Akimoto , Akiharu Miyanaga , Takuya Hirohashi , Hideyuki Kishida
发明人： Shunpei Yamazaki , Masayuki Sakakura , Ryosuke Watanabe , Junichiro Sakata , Kengo Akimoto , Akiharu Miyanaga , Takuya Hirohashi , Hideyuki Kishida
IPC分类号： H01L29/10 , H01L29/786 , H01L27/12 , H01L29/04
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/04 , H01L29/045 , H01L29/78618 , H01L29/78693 , H01L29/78696
摘要： To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.

2. 发明授权

US09782377B2 Composition for normalization of infradian rhythm 有权
公开(公告)号：US09782377B2
公开(公告)日：2017-10-10
申请号：US10546158
申请日：2004-03-26
申请人： Kengo Akimoto , Yoshiko Ono , Hiroshi Kawashima , Katsuya Nagai
发明人： Kengo Akimoto , Yoshiko Ono , Hiroshi Kawashima , Katsuya Nagai
IPC分类号： A61K31/202 , A23L1/30 , A23L33/12
CPC分类号： A61K31/202 , A23L33/12
摘要： A composition having a normalizing action for infradian rhythm and/or a synchronization promoting action for circadian rhythm (biological clock) containing arachidonic acid and/or an arachidonic acid-containing compound.

3. 发明授权

US09196633B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US09196633B2
公开(公告)日：2015-11-24
申请号：US12556704
申请日：2009-09-10
申请人： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Tomoya Futamura , Takahiro Kasahara
发明人： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Tomoya Futamura , Takahiro Kasahara
IPC分类号： H01L33/00 , H01L27/12 , G02F1/1362 , H01L27/02 , H01L29/786
CPC分类号： H01L27/124 , G02F1/136204 , G02F1/136286 , H01L27/0266 , H01L27/1225 , H01L29/7869
摘要： A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.
摘要翻译：保护电路包括非线性元件，其包括栅电极，覆盖栅电极的栅极绝缘层，与栅极绝缘层上的栅电极重叠的第一氧化物半导体层，以及第一布线层和第二布线层其端部与第一氧化物半导体层上的栅电极重叠，并且其中层叠有导电层和第二氧化物半导体层。在栅极绝缘层上，具有不同性质的氧化物半导体层彼此结合，由此可以进行与肖特基结的稳定操作。因此，可以降低结漏电，提高非线性元件的特性。

4. 发明授权

US09130043B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09130043B2
公开(公告)日：2015-09-08
申请号：US12893513
申请日：2010-09-29
申请人： Kengo Akimoto
发明人： Kengo Akimoto
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/41733 , H01L29/42384 , H01L29/78603
摘要： An object is to provide a method for manufacturing a highly reliable semiconductor device which includes a thin film transistor using an oxide semiconductor and having stable electric characteristics. In manufacture of a semiconductor device in which an oxide semiconductor is used for a channel formation region, after an oxide semiconductor film is formed, a conductive film including a metal, a metal compound, or an alloy that can absorb or adsorb moisture, a hydroxy group, or hydrogen is formed to overlap with the oxide semiconductor film with an insulating film provided therebetween. Then, heat treatment is performed in the state where the conductive film is exposed; in such a manner, activation treatment for removing moisture, oxygen, hydrogen, or the like adsorbed onto a surface of or in the conductive film is performed.
摘要翻译：本发明的目的是提供一种用于制造高可靠性的半导体器件的方法，该半导体器件包括使用氧化物半导体并具有稳定的电特性的薄膜晶体管。在使用氧化物半导体用于沟道形成区域的半导体器件的制造中，在形成氧化物半导体膜之后，可以使用能够吸收或吸附水分的金属，金属化合物或合金的导电膜，羟基组或氢形成为与氧化物半导体膜重叠，其间设置有绝缘膜。然后，在导电膜露出的状态下进行热处理; 以这种方式，执行吸附在导电膜表面上或导电膜中的水分，氧气，氢气等的活化处理。

5. 发明授权

US09111804B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US09111804B2
公开(公告)日：2015-08-18
申请号：US13346963
申请日：2012-01-10
申请人： Shunpei Yamazaki , Hidekazu Miyairi , Kengo Akimoto , Kojiro Shiraishi
发明人： Shunpei Yamazaki , Hidekazu Miyairi , Kengo Akimoto , Kojiro Shiraishi
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L29/66969 , H01L21/46 , H01L27/1225 , H01L29/7869
摘要： It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.

6. 发明授权

US09099562B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09099562B2
公开(公告)日：2015-08-04
申请号：US12542068
申请日：2009-08-17
申请人： Kengo Akimoto , Tatsuya Honda , Norihito Sone
发明人： Kengo Akimoto , Tatsuya Honda , Norihito Sone
IPC分类号： H01L21/00 , H01L29/786 , H01L27/12
CPC分类号： H01L29/78696 , H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02266 , H01L21/02565 , H01L21/02631 , H01L21/428 , H01L21/465 , H01L21/477 , H01L27/1225 , H01L27/1285 , H01L29/04 , H01L29/045 , H01L29/7869
摘要： An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
摘要翻译：本发明的目的是提供一种半导体器件，其制造工艺不复杂并且可以通过以氧化锌为代表的氧化物半导体膜形成薄膜晶体管来制造成本。对于半导体器件，在基板上形成栅电极; 形成覆盖栅电极的栅极绝缘膜; 在栅绝缘膜上形成氧化物半导体膜; 并且在氧化物半导体膜上形成第一导电膜和第二导电膜。氧化物半导体膜在沟道区域中至少具有结晶化区域。

7. 发明授权

US08970106B2 Display device and method for manufacturing the same 有权
公开(公告)号：US08970106B2
公开(公告)日：2015-03-03
申请号：US13360838
申请日：2012-01-30
申请人： Shunpei Yamazaki , Toru Takayama , Naoya Sakamoto , Kengo Akimoto , Keiji Sato , Tetsunori Maruyama
发明人： Shunpei Yamazaki , Toru Takayama , Naoya Sakamoto , Kengo Akimoto , Keiji Sato , Tetsunori Maruyama
IPC分类号： H01J1/62 , H01J63/04 , H01L51/52 , H01L27/32
CPC分类号： H01L51/5206 , H01L27/3244 , H01L27/3246 , H01L27/3281 , H01L27/3295 , H01L51/5215 , Y10S428/917
摘要： According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.

8. 发明授权

US08901552B2 Top gate thin film transistor with multiple oxide semiconductor layers 有权
标题翻译：具有多个氧化物半导体层的顶栅薄膜晶体管
公开(公告)号：US08901552B2
公开(公告)日：2014-12-02
申请号：US13226713
申请日：2011-09-07
申请人： Shunpei Yamazaki , Yusuke Nonaka , Takayuki Inoue , Masashi Tsubuku , Kengo Akimoto , Akiharu Miyanaga
发明人： Shunpei Yamazaki , Yusuke Nonaka , Takayuki Inoue , Masashi Tsubuku , Kengo Akimoto , Akiharu Miyanaga
IPC分类号： H01L29/12 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L27/01 , H01L27/12 , H01L21/02 , H01L29/786
CPC分类号： H01L29/7869 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L29/04 , H01L29/24 , H01L29/78603
摘要： An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.
摘要翻译：本发明的目的是提供一种具有稳定的电气特性和高可靠性的氧化物半导体膜的半导体装置。通过在绝缘表面上形成厚度为1nm至10nm的第一材料膜（具有六方晶体结构的膜）形成第一和第二材料膜的叠层，并形成具有六方晶系结构的第二材料膜（使用第一材料膜作为核的结晶氧化物半导体膜）。作为第一材料膜，具有纤锌矿晶体结构的材料膜（例如氮化镓或氮化铝）或具有刚玉晶体结构的材料膜（α-Al 2 O 3，α-Ga 2 O 3，In 2 O 3，Ti 2 O 3，V 2 O 3，Cr 2 O 3，或 α-Fe 2 O 3）。

9. 发明授权

US08890166B2 Light-emitting device and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US08890166B2
公开(公告)日：2014-11-18
申请号：US12871184
申请日：2010-08-30
申请人： Masayuki Sakakura , Yoshiaki Oikawa , Shunpei Yamazaki , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba
发明人： Masayuki Sakakura , Yoshiaki Oikawa , Shunpei Yamazaki , Junichiro Sakata , Masashi Tsubuku , Kengo Akimoto , Miyuki Hosoba
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036 , H01L27/32 , H01L27/12
CPC分类号： H01L27/1251 , H01L27/1225 , H01L27/322 , H01L27/3262
摘要： An object of the present invention is to provide a light-emitting device in which plural kinds of circuits are formed over the same substrate, and plural kinds of thin film transistors are provided in accordance with characteristics of the plural kinds of circuits. An inverted-coplanar thin film transistor, an oxide semiconductor layer of which overlaps with a source and drain electrode layers, and a channel-etched thin film transistor are used as a thin film transistor for a pixel and a thin film transistor for a driver circuit, respectively. Between the thin film transistor for a pixel and a light-emitting element, a color filter layer is provided so as to overlap with the light-emitting element which is electrically connected to the thin film transistor for a pixel.
摘要翻译：本发明的目的是提供一种在同一基板上形成多种电路的发光器件，并且根据多种电路的特性提供多种薄膜晶体管。作为用于像素的薄膜晶体管和用于驱动电路的薄膜晶体管，使用反向共面薄膜晶体管，其与源极和漏极层重叠的氧化物半导体层和沟道蚀刻薄膜晶体管，分别。在用于像素的薄膜晶体管和发光元件之间，设置滤色器层，以与与像素的薄膜晶体管电连接的发光元件重叠。

10. 发明授权

US08841097B2 Process for producing unsaturated fatty acid-containing oils 有权
标题翻译：用于生产不饱和脂肪酸的油的方法
公开(公告)号：US08841097B2
公开(公告)日：2014-09-23
申请号：US11407984
申请日：2006-04-21
申请人： Kenichi Higashiyama , Kengo Akimoto , Sakayu Shimizu
发明人： Kenichi Higashiyama , Kengo Akimoto , Sakayu Shimizu
IPC分类号： C12P7/64 , A61K31/20 , C07C53/00 , A23L1/30 , A23D9/00 , A23K1/16 , A23L1/29
CPC分类号： C12P7/6472 , A23D9/00 , A23K20/158 , A23L33/12 , A23L33/40 , A23V2002/00 , C12P7/64 , Y10S426/801 , Y10S426/807 , A23V2250/54252 , A23V2250/1874 , A23V2250/1868 , A23V2250/1862 , A23V2250/187 , A23V2250/612 , A23V2250/28 , A23V2250/70 , A23V2250/156
摘要： An edible oil obtained by culturing a microorganism belong to the genus Mortierella subgenus Mortierella in a medium containing a nitrogen source derived from soybean is discussed. The oils obtained have a low 24,25-methylenecholest-5-en-3β-ol content.
摘要翻译：通过在含有源自大豆的氮源的培养基中培养微生物而获得的食用油属于被孢霉属（Mortierella subgenus Mortidalla）属。获得的油具有低的24,25-亚甲基胆甾-5-烯-3β-醇含量。

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