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11. 发明授权

US09449959B2 ESD protection circuit cell 有权
标题翻译： ESD保护电路单元
公开(公告)号：US09449959B2
公开(公告)日：2016-09-20
申请号：US13921226
申请日：2013-06-19
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Wan-Yen Lin , Jam-Wem Lee
IPC分类号： H02H9/04 , H01L27/02
CPC分类号： H01L27/0259 , H02H9/046
摘要： A device includes a first bidirectional PNP circuit coupled to a first output of an communication circuit, and a second bidirectional PNP circuit coupling to a second output of the communication circuit. The first and second bi-direction PNP circuits have coupled outputs and a first breakdown voltage. A third bidirectional PNP circuit is coupled to ground via the coupled outputs of the first bidirectional PNP circuit and of the second bidirectional PNP circuit. The third bidirectional PNP circuit has a second breakdown voltage. In some arrangements, a sum of the first breakdown voltage and the second breakdown voltage exceeds 60 volts. The communication circuit can be an automotive application circuit for a serial automotive communication application. The first and second bidirectional transistor circuits can form a part of a cell of an integrated circuit having an isolation structure to sustain high voltage.
摘要翻译：一种设备包括耦合到通信电路的第一输出的第一双向PNP电路和耦合到通信电路的第二输出的第二双向PNP电路。第一和第二双向PNP电路具有耦合输出和第一击穿电压。第三双向PNP电路经由第一双向PNP电路和第二双向PNP电路的耦合输出耦合到地。第三双向PNP电路具有第二击穿电压。在一些布置中，第一击穿电压和第二击穿电压之和超过60伏特。通信电路可以是用于串行汽车通信应用的汽车应用电路。第一和第二双向晶体管电路可以形成具有隔离结构以保持高电压的集成电路的单元的一部分。

12. 发明授权

US09245878B2 Bidirectional dual-SCR circuit for ESD protection 有权
标题翻译：用于ESD保护的双向双SCR电路
公开(公告)号：US09245878B2
公开(公告)日：2016-01-26
申请号：US14251670
申请日：2014-04-14
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Ming-Hsiang Song , Jam-Wem Lee , Tzu-Heng Chang , Yu-Ying Hsu
IPC分类号： H01L23/62 , H01L27/02
CPC分类号： H01L27/0262
摘要： An ESD protection circuit includes at least a first and a second silicon controlled rectifier (SCR) circuits. The first SCR circuit is coupled between the pad and the positive power supply terminal. The second SCR circuit is coupled between the pad and the ground terminal. At least one of the SCR circuits is configured to selectively provide a short or relatively conductive electrical path between the pad and one of the positive power supply terminal and the ground terminal.
摘要翻译： ESD保护电路至少包括第一和第二可控硅整流器（SCR）电路。第一SCR电路耦合在焊盘和正电源端子之间。第二SCR电路耦合在焊盘和接地端子之间。 SCR电路中的至少一个被配置为选择性地在焊盘和正电源端子和接地端子之一之间提供短路或相对导电的电路径。

13. 发明申请

US20220293534A1 ELECTROSTATIC DISCHARGE (ESD) ARRAY WITH CIRCUIT CONTROLLED SWITCHES 有权
公开(公告)号：US20220293534A1
公开(公告)日：2022-09-15
申请号：US17199299
申请日：2021-03-11
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Tao-Yi Hung , Wun-Jie Lin , Jam-Wem Lee , Kuo-Ji Chen
IPC分类号： H01L23/60 , H02H9/04 , H01L27/02
摘要： An electrostatic discharge (ESD) protection apparatus and method for fabricating the same are disclosed herein. In some embodiments, the ESD protection apparatus comprises: an internal circuit formed in a first wafer; an array of electrostatic discharge (ESD) circuits formed in a second wafer, wherein the ESD circuits include a plurality of ESD protection devices each coupled to a corresponding switch and configured to protect the internal circuit from a transient ESD event; and a switch controller in the second wafer, wherein the switch controller is configured to control, based on a control signal from the first wafer, each of the plurality of ESD protection devices to be activated or deactivated by the corresponding switch, and wherein the first wafer is bonded to the second wafer.

14. 发明申请

US20220165725A1 High Voltage ESD Protection Apparatus 有权
公开(公告)号：US20220165725A1
公开(公告)日：2022-05-26
申请号：US17669953
申请日：2022-02-11
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Yi-Feng Chang , Jam-Wem Lee
IPC分类号： H01L27/02 , H01L29/73 , H01L29/735 , H01L29/861 , H01L29/872 , H01L27/06 , H01L29/06 , H01L29/08 , H01L29/10
摘要： A device comprises a high voltage n well and a high voltage p well over a buried layer, a first low voltage n well over the high voltage n well, wherein a bottom portion of the first low voltage n well is surrounded by the high voltage n well, an N+ region over the first low voltage n well, a second low voltage n well and a low voltage p well over the high voltage p well, a first P+ region over the second low voltage n well and a second P+ region over the low voltage p well.

15. 发明授权

US11282831B2 Semiconductor device having multiple electrostatic discharge (ESD) paths 有权
公开(公告)号：US11282831B2
公开(公告)日：2022-03-22
申请号：US16575091
申请日：2019-09-18
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Po-Lin Peng , Li-Wei Chu , Ming-Fu Tsai , Jam-Wem Lee , Yu-Ti Su
IPC分类号： H01L27/02 , H01L27/06 , H01L29/87 , H01L29/86 , H01L29/08 , H01L29/10 , H01L29/74 , H01L23/60 , H01L23/62 , H01L29/747 , H01L29/861
摘要： A semiconductor device includes a first diode, a second diode, a clamp circuit and a third diode. The first diode is coupled between an input/output (I/O) pad and a first voltage terminal. The second diode is coupled with the first diode, the I/O pad and a second voltage terminal. The clamp circuit is coupled between the first voltage terminal and the second voltage terminal. The second diode and the clamp circuit are configured to direct a first part of an electrostatic discharge (ESD) current flowing between the I/O pad and the first voltage terminal. The third diode, coupled to the first voltage terminal, and the second diode include a first semiconductor structure configured to direct a second part of the ESD current flowing between the I/O pad and the first voltage terminal.

16. 发明授权

US10411005B2 Intelligent diode structures 有权
公开(公告)号：US10411005B2
公开(公告)日：2019-09-10
申请号：US15938496
申请日：2018-03-28
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Yi-Feng Chang , Jam-Wem Lee , Li-Wei Chu , Po-Lin Peng
IPC分类号： H01L29/06 , H01L29/861 , H01L27/02 , H01L27/08
摘要： The present disclosure describes exemplary configurations and arrangements for various intelligent diodes. The intelligent diodes of the present disclosure can be implemented as part of electrostatic discharge protection circuitry to protect other electronic circuitry from the flow of electricity caused by electrostatic discharge events. The electrostatic discharge protection circuitry dissipates one or more unwanted transient signals which result from the electrostatic discharge event. In some situations, some carrier electrons and/or carrier holes can flow from intelligent diodes of the present disclosure into a semiconductor substrate. The exemplary configurations and arrangements described herein include various regions designed collect these carrier electrons and/or carrier holes to reduce the likelihood these carrier electrons and/or carrier holes cause latch-up of the other electronic circuitry.

17. 发明授权

US11569223B2 Integrated circuit and method for fabricating the same 有权
公开(公告)号：US11569223B2
公开(公告)日：2023-01-31
申请号：US17086076
申请日：2020-10-30
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Tao-Yi Hung , Wun-Jie Lin , Jam-Wem Lee , Kuo-Ji Chen , Chia-En Huang
IPC分类号： H01L27/02 , H01L21/8238 , H01L27/092
摘要： A method for fabricating an integrated circuit is provided. The method includes etching a first recess in a semiconductor structure; forming a first doped epitaxial feature in the first recess; and forming a second doped epitaxial feature over the first doped epitaxial feature, wherein the second doped epitaxial feature has a conductive type opposite to a conductive type of the first doped epitaxial feature.

18. 发明授权

US10366992B2 Semiconductor device including transistors sharing gates 有权
公开(公告)号：US10366992B2
公开(公告)日：2019-07-30
申请号：US15691725
申请日：2017-08-30
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Yi-Feng Chang , Po-Lin Peng , Jam-Wem Lee
IPC分类号： H01L27/092 , H01L29/10 , H01L27/02 , H01L21/8238
摘要： A semiconductor device includes a first active area of a first type, a second active area of a second type, and a plurality of gates. The gates are arranged above and across the first active area and the second active area. At a first side of a first gate of the plurality of gates, a first region of the first active area is configured to receive a first voltage and a first region of the second active area is configured to receive a second voltage. At a second side of the first gate, a second region of the first active area is disconnected from the first voltage and a second region of the second active area is disconnected from the second voltage.

19. 发明授权

US10134726B2 Diode string implementation for electrostatic discharge protection 有权
公开(公告)号：US10134726B2
公开(公告)日：2018-11-20
申请号：US15332999
申请日：2016-10-24
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Tsung-Che Tsai , Jam-Wem Lee
IPC分类号： H01L27/02 , H02H9/04 , H01L29/66 , H01L27/08 , H01L21/822 , H01L29/06 , H01L29/861 , H01L27/06 , H01L29/08 , H01L29/87
摘要： A diode string having a plurality of diodes for ESD protection of a CMOS IC device comprises a first diode and a last diode in the diode string, wherein the first diode and the last diode are both formed on a bottom layer in a silicon substrate, and remaining diodes in the diode string. The remaining diodes are formed on a top layer placed on top of the bottom layer. The diode string further comprises a plurality of conductive lines that connect the first diode and the last diode on the bottom layer sequentially with the remaining diodes on the top layer to form a three dimensional (3D) structure of the diode string.

20. 发明授权

US08809961B2 Electrostatic discharge (ESD) guard ring protective structure 有权
标题翻译：静电放电（ESD）保护环保护结构
公开(公告)号：US08809961B2
公开(公告)日：2014-08-19
申请号：US14056034
申请日：2013-10-17
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Tsung-Che Tsai , Jam-Wem Lee , Yi-Feng Chang
IPC分类号： H01L29/66 , H01L23/62
CPC分类号： H01L27/0259 , H01L21/761 , H01L27/0277 , H01L27/0629
摘要： An electrostatic discharge (ESD) protection circuit structure includes several diffusion regions and a MOS transistor. The circuit structure includes a first diffusion region of a first type (e.g., P-type or N-type) formed in a first well of the first type, a second diffusion region of the first type formed in the first well of the first type, and a first diffusion region of a second type (e.g., N-type or P-type) formed in a first well of the second type. The first well of the second type is formed in the first well of the first type. The MOS transistor is of the second type and includes a drain formed by a second diffusion region of the second type formed in a second well of the second type bordering the first well of the first type.
摘要翻译：静电放电（ESD）保护电路结构包括几个扩散区和MOS晶体管。电路结构包括形成在第一类型的第一阱中的第一类型的第一扩散区（例如，P型或N型），形成在第一类型的第一阱中的第一类型的第二扩散区以及形成在第二类型的第一阱中的第二类型的第一扩散区域（例如，N型或P型）。第一类型的第一井的第一井形成在第一类的第一井中。 MOS晶体管是第二类型，并且包括由与第一类型的第一阱接合的第二类型的第二阱中形成的第二类型的第二扩散区形成的漏极。

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