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1. 发明授权

US10930640B2 Intelligent diode structures 有权
公开(公告)号：US10930640B2
公开(公告)日：2021-02-23
申请号：US16861809
申请日：2020-04-29
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Yi-Feng Chang , Jam-Wem Lee , Li-Wei Chu , Po-Lin Peng
IPC分类号： H01L27/02 , H01L27/12 , H01L29/861 , H01L27/08 , H01L27/06 , H01L29/06
摘要： The present disclosure describes exemplary configurations and arrangements for various intelligent diodes. The intelligent diodes of the present disclosure can be implemented as part of electrostatic discharge protection circuitry to protect other electronic circuitry from the flow of electricity caused by electrostatic discharge events. The electrostatic discharge protection circuitry dissipates one or more unwanted transient signals which result from the electrostatic discharge event. In some situations, some carrier electrons and/or carrier holes can flow from intelligent diodes of the present disclosure into a semiconductor substrate. The exemplary configurations and arrangements described herein include various regions designed collect these carrier electrons and/or carrier holes to reduce the likelihood these carrier electrons and/or carrier holes cause latch-up of the other electronic circuitry.

2. 发明授权

US09129809B2 Silicon controlled rectifier for high voltage applications 有权
标题翻译：可控硅整流器用于高压应用
公开(公告)号：US09129809B2
公开(公告)日：2015-09-08
申请号：US13958901
申请日：2013-08-05
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Yi-Feng Chang
IPC分类号： H01L23/552 , H01L27/088 , H01L29/74 , H01L31/111 , H01L23/62 , H01L27/02
CPC分类号： H01L27/0262 , H01L29/7436
摘要： In a silicon-controlled rectifier, an anode region includes p-type anode well regions which are laterally surrounded by an n-type well region. A length of a p-type anode well region, as measured in a first direction, is greater than a width of the p-type anode well region, as measured in a second direction perpendicular to the first direction. A p-type well region meets the n-type well region at a junction, wherein the junction extends between the p-type well region and n-type well region in the second direction. A cathode region includes a plurality of n-type cathode well regions which are formed in the p-type well region. A length of an n-type cathode well region, as measured in the first direction, is greater than a width of the n-type cathode well region, as measured in the second direction.
摘要翻译：在可控硅整流器中，阳极区域包括由n型阱区域侧向包围的p型阳极阱区域。如在第一方向上测量的p型阳极阱区的长度大于在垂直于第一方向的第二方向上测量的p型阳极阱区的宽度。 p型阱区在结处与n型阱区相交，其中该结在第二方向上在p型阱区和n型阱区之间延伸。阴极区域包括形成在p型阱区域中的多个n型阴极阱区域。如在第一方向测量的，n型阴极阱区的长度大于在第二方向上测量的n型阴极阱区的宽度。

3. 发明授权

US11222893B2 Semiconductor device including transistors sharing gates with structures having reduced parasitic circuit 有权
公开(公告)号：US11222893B2
公开(公告)日：2022-01-11
申请号：US16525275
申请日：2019-07-29
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Yi-Feng Chang , Po-Lin Peng , Jam-Wem Lee
IPC分类号： H01L29/87 , H01L27/092 , H01L29/10 , H01L27/02 , H01L21/8238 , H01L29/06
摘要： A method includes the following operations: disconnecting at least one of drain regions that are formed on a first active area, of first transistors, from a first voltage; and disconnecting at least one of drain regions that are formed on a second active area, of second transistors coupled to the first transistors from a second voltage. The at least one of drain regions of the second transistors corresponds to the at least one of drain regions of the first transistors.

4. 发明申请

US20220165725A1 High Voltage ESD Protection Apparatus 有权
公开(公告)号：US20220165725A1
公开(公告)日：2022-05-26
申请号：US17669953
申请日：2022-02-11
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Yi-Feng Chang , Jam-Wem Lee
IPC分类号： H01L27/02 , H01L29/73 , H01L29/735 , H01L29/861 , H01L29/872 , H01L27/06 , H01L29/06 , H01L29/08 , H01L29/10
摘要： A device comprises a high voltage n well and a high voltage p well over a buried layer, a first low voltage n well over the high voltage n well, wherein a bottom portion of the first low voltage n well is surrounded by the high voltage n well, an N+ region over the first low voltage n well, a second low voltage n well and a low voltage p well over the high voltage p well, a first P+ region over the second low voltage n well and a second P+ region over the low voltage p well.

5. 发明授权

US10411005B2 Intelligent diode structures 有权
公开(公告)号：US10411005B2
公开(公告)日：2019-09-10
申请号：US15938496
申请日：2018-03-28
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Yi-Feng Chang , Jam-Wem Lee , Li-Wei Chu , Po-Lin Peng
IPC分类号： H01L29/06 , H01L29/861 , H01L27/02 , H01L27/08
摘要： The present disclosure describes exemplary configurations and arrangements for various intelligent diodes. The intelligent diodes of the present disclosure can be implemented as part of electrostatic discharge protection circuitry to protect other electronic circuitry from the flow of electricity caused by electrostatic discharge events. The electrostatic discharge protection circuitry dissipates one or more unwanted transient signals which result from the electrostatic discharge event. In some situations, some carrier electrons and/or carrier holes can flow from intelligent diodes of the present disclosure into a semiconductor substrate. The exemplary configurations and arrangements described herein include various regions designed collect these carrier electrons and/or carrier holes to reduce the likelihood these carrier electrons and/or carrier holes cause latch-up of the other electronic circuitry.

6. 发明申请

US20150035007A1 SILICON CONTROLLED RECTIFIER FOR HIGH VOLTAGE APPLICATIONS 有权
标题翻译：用于高压应用的硅控制整流器
公开(公告)号：US20150035007A1
公开(公告)日：2015-02-05
申请号：US13958901
申请日：2013-08-05
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Yi-Feng Chang
IPC分类号： H01L27/02
CPC分类号： H01L27/0262 , H01L29/7436
摘要： In a silicon-controlled rectifier, an anode region includes p-type anode well regions which are laterally surrounded by an n-type well region. A length of a p-type anode well region, as measured in a first direction, is greater than a width of the p-type anode well region, as measured in a second direction perpendicular to the first direction. A p-type well region meets the n-type well region at a junction, wherein the junction extends between the p-type well region and n-type well region in the second direction. A cathode region includes a plurality of n-type cathode well regions which are formed in the p-type well region. A length of an n-type cathode well region, as measured in the first direction, is greater than a width of the n-type cathode well region, as measured in the second direction.
摘要翻译：在可控硅整流器中，阳极区域包括由n型阱区域侧向包围的p型阳极阱区域。如在第一方向上测量的p型阳极阱区的长度大于在垂直于第一方向的第二方向上测量的p型阳极阱区的宽度。 p型阱区在结处与n型阱区相交，其中该结在第二方向上在p型阱区和n型阱区之间延伸。阴极区域包括形成在p型阱区域中的多个n型阴极阱区域。如在第一方向测量的，n型阴极阱区的长度大于在第二方向上测量的n型阴极阱区的宽度。

7. 发明授权

US10366992B2 Semiconductor device including transistors sharing gates 有权
公开(公告)号：US10366992B2
公开(公告)日：2019-07-30
申请号：US15691725
申请日：2017-08-30
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Yi-Feng Chang , Po-Lin Peng , Jam-Wem Lee
IPC分类号： H01L27/092 , H01L29/10 , H01L27/02 , H01L21/8238
摘要： A semiconductor device includes a first active area of a first type, a second active area of a second type, and a plurality of gates. The gates are arranged above and across the first active area and the second active area. At a first side of a first gate of the plurality of gates, a first region of the first active area is configured to receive a first voltage and a first region of the second active area is configured to receive a second voltage. At a second side of the first gate, a second region of the first active area is disconnected from the first voltage and a second region of the second active area is disconnected from the second voltage.

8. 发明授权

US08809961B2 Electrostatic discharge (ESD) guard ring protective structure 有权
标题翻译：静电放电（ESD）保护环保护结构
公开(公告)号：US08809961B2
公开(公告)日：2014-08-19
申请号：US14056034
申请日：2013-10-17
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Tsung-Che Tsai , Jam-Wem Lee , Yi-Feng Chang
IPC分类号： H01L29/66 , H01L23/62
CPC分类号： H01L27/0259 , H01L21/761 , H01L27/0277 , H01L27/0629
摘要： An electrostatic discharge (ESD) protection circuit structure includes several diffusion regions and a MOS transistor. The circuit structure includes a first diffusion region of a first type (e.g., P-type or N-type) formed in a first well of the first type, a second diffusion region of the first type formed in the first well of the first type, and a first diffusion region of a second type (e.g., N-type or P-type) formed in a first well of the second type. The first well of the second type is formed in the first well of the first type. The MOS transistor is of the second type and includes a drain formed by a second diffusion region of the second type formed in a second well of the second type bordering the first well of the first type.
摘要翻译：静电放电（ESD）保护电路结构包括几个扩散区和MOS晶体管。电路结构包括形成在第一类型的第一阱中的第一类型的第一扩散区（例如，P型或N型），形成在第一类型的第一阱中的第一类型的第二扩散区以及形成在第二类型的第一阱中的第二类型的第一扩散区域（例如，N型或P型）。第一类型的第一井的第一井形成在第一类的第一井中。 MOS晶体管是第二类型，并且包括由与第一类型的第一阱接合的第二类型的第二阱中形成的第二类型的第二扩散区形成的漏极。

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