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    • 11. 发明申请
    • OPTICAL INFORMATION RECORDING MEDIUM
    • 光信息记录介质
    • US20090029092A1
    • 2009-01-29
    • US11909579
    • 2006-03-23
    • Kousuke WatanabeTetsuya WatanabeKeita TakahashiKazutoshi KatayamaChisato Obara
    • Kousuke WatanabeTetsuya WatanabeKeita TakahashiKazutoshi KatayamaChisato Obara
    • G11B7/246B32B3/02
    • G11B7/249G11B7/245G11B7/246G11B7/2467G11B7/2478G11B7/2492G11B7/2495G11B7/2498G11B7/2531G11B7/2532G11B7/2533G11B7/2534G11B7/2535G11B7/256G11B7/259G11B2007/24612
    • The invention provides an optical information recording medium having a recording layer capable of recording information by irradiating the recording layer with a laser beam of 440 nm or less.In the optical information recording medium, the recording layer contains an oxonol dye represented by formula (1), and a counter cation (Yt+) of this dye is a cationic dye having an absorption maximum in a range of longer wavelengths than an absorption maximum of an anionic part of the oxonol dye. In the formula, A, B, C and D each represents an electron-withdrawing group. A and B or C and D may be combined with each other to form a ring. If these are not combined with each other, these are electron-withdrawing groups in which the sum of Hammett's σp values of A and B and the sum of Hammett's σp values of C and D are each greater than 0.6. R represents a substituent group on methine carbon, and m represents an integer of 0 to 1. n represents an integer of 0 to 2m+1. If n is 2 or greater, a plurality of R's may be different from each other, and R and R may be combined together to form a ring. Yt+ represents a t-valent cation, and t represents an integer of 1 to 4.
    • 本发明提供了一种光信息记录介质,其具有能够通过用440nm或更小的激光照射记录层来记录信息的记录层。 在光学信息记录介质中,记录层含有由式(1)表示的氧杂菁染料,该染料的抗衡阳离子(Yt +)是具有比最大吸收波长更长的波长的吸收最大值的阳离子染料 氧杂菁染料的阴离子部分。 在该式中,A,B,C和D各自表示吸电子基团。 A和B或C和D可以彼此组合以形成环。 如果这些不相互结合,则这些是吸电子基团,其中A和B的Hammett sigmap值之和以及C和D的Hammett sigmap值之和大于0.6。 R表示次甲基碳上的取代基,m表示0〜1的整数.n表示0〜2m + 1的整数。 如果n为2以上,则多个R可以相互不同,R和R可以组合在一起形成环。 Yt +表示t价阳离子,t表示1〜4的整数。
    • 16. 发明授权
    • Robot arm mechanism
    • 机器人手臂机构
    • US07244091B2
    • 2007-07-17
    • US11287366
    • 2005-11-28
    • Hiroki MoriTetsuya WatanabeChohei Okuno
    • Hiroki MoriTetsuya WatanabeChohei Okuno
    • B25J17/00
    • B25J9/1065Y10S414/13Y10T74/20329
    • Herein disclosed is a robot arm mechanism comprising a first arm link mechanism and a second arm link mechanism, a robot arm driving mechanism for driving the first arm link mechanism and the second arm link mechanism, and a link retaining mechanism for pivotably retaining the first arm link mechanism and the second arm link mechanism, in which a third arm link and a fourth arm link of the first arm link mechanism are kept forward in a first rotation direction, in which the first arm link mechanism and the second arm link mechanism are extended, thereby enabling to prevent the quadric crank chain constituting the robot arm mechanism from being flattened out while the first arm link mechanism and the second arm link mechanism are extended, and improving resistance to deformation, in comparison with the conventional robot arm mechanism.
    • 这里公开了一种机器人手臂机构,包括第一臂连杆机构和第二臂连杆机构,用于驱动第一臂连杆机构和第二臂连杆机构的机器人手臂驱动机构,以及连杆保持机构,用于可枢转地保持第一臂 连杆机构和第二臂连杆机构,其中第一臂连杆机构的第三臂连杆和第四臂连杆沿第一旋转方向保持向前,第一臂连杆机构和第二臂连杆机构延伸 从而与传统的机器人手臂机构相比,能够防止构成机器人臂机构的二次曲柄链在第一臂连杆机构和第二臂连杆机构伸长的同时被平坦化,并且提高耐变形性。
    • 19. 发明授权
    • Capacitance measurement circuit
    • 电容测量电路
    • US07230435B2
    • 2007-06-12
    • US10760449
    • 2004-01-21
    • Tatsuya KunikiyoTetsuya WatanabeToshiki KanamotoKyoji Yamashita
    • Tatsuya KunikiyoTetsuya WatanabeToshiki KanamotoKyoji Yamashita
    • G01R27/26G01R27/02
    • G01R27/2605
    • A CBCM circuit is capable of separately measuring each component of a measuring target capacitance. A node (N1) is electrically connected to a terminal (P2) between the drains of PMOS and NMOS transistors (MP2, MN2). As a target capacitance forming part, a coupling capacitance (Cc) is formed between the node (N1) and a node (N2). The node (N2) is connected to a pad (58) through the terminal (P2) and an NMOS transistor (MN3), and a node (N3) is connected to a terminal (P3) between the drains of PMOS and NMOS transistors (MP1, MN1). A reference capacitance (Cref) is formed at the node (N3) as a dummy capacitance. Currents (Ir, It) supplied from a power source to the nodes (N3, N1) are measured with current meters (61, 62), respectively and a current (Im) induced from the node (N2) and flowing to a ground level is measured with a current meter (63).
    • CBCM电路能够单独测量测量目标电容的每个分量。 节点(N 1)电连接到PMOS和NMOS晶体管(MP 2,MN 2)的漏极之间的端子(P 2)。 作为目标电容形成部,在节点(N 1)和节点(N 2)之间形成耦合电容(C SUB)。 节点(N 2)经由端子(P 2)和NMOS晶体管(MN 3)连接到焊盘(58),并且节点(N 3)连接到端子(N 3)之间的端子(P 3) PMOS和NMOS晶体管(MP 1,MN 1)。 在节点(N 3)处形成参考电容(C SUB)作为虚拟电容。 分别用电流计(61,62)从电源向节点(N 3,N 1)提供的电流(I,R,I,T) 使用电流计(63)测量从节点(N 2)感应并流到地平面的电流(I SUB)。