专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20180224501A1 METHODS, TEST STRUCTURES, AND TEST SYSTEMS FOR DETERMINING A SURFACE CHARACTERISTIC OF A CHIP FACET 审中-公开
公开(公告)号：US20180224501A1
公开(公告)日：2018-08-09
申请号：US15427185
申请日：2017-02-08
申请人： Elenion Technologies, LLC
发明人： Matthew Akio Streshinsky , Ari Novack , Michael J. Hochberg
IPC分类号： G01R31/311 , G01N21/88
CPC分类号： G01N21/8806 , G01B11/30 , G01R31/308 , G01R31/311 , H01L22/12 , H01L22/30
摘要： A test system for determining a surface characteristic of a chip facet comprises a chip, which has a facet and includes a waveguide, a detector, and a processor. The on-chip waveguide is configured to direct test light towards the facet, where a portion of the test light is reflected and a portion of the test light is transmitted. The detector is configured to measure an amount of the reflected portion or the transmitted portion, and the processor is configured to determine a surface characteristic of the facet, such as a facet angle, a facet curvature, and/or a facet roughness, on the basis of the measured amount.

2. 发明申请

US20180128869A1 FAILURE LOCATION SPECIFYING DEVICE AND FAILURE LOCATION SPECIFYING METHOD 审中-公开
公开(公告)号：US20180128869A1
公开(公告)日：2018-05-10
申请号：US15715524
申请日：2017-09-26
申请人： Renesas Electronics Corporation
发明人： Junpei Nonaka
IPC分类号： G01R31/26 , G01R31/308 , G01R23/17
CPC分类号： G01R31/2621 , G01R23/17 , G01R31/2656 , G01R31/308 , G01R31/311
摘要： A failure location specifying device that can specify a failure location even if the spatial resolution is insufficient includes: an EOFM measurement unit that calculates a phase difference between a measurement signal on the basis of reflected light in accordance with the operation of a circuit element arranged in a semiconductor device and a reference signal, and generates a phase map of the circuit element in the semiconductor device. A circuit simulation unit calculates the operation waveform of a circuit element included in the field of view that is extracted by a circuit extraction unit by a simulation. A phase calculation unit calculates a phase on the basis of the operation waveform calculated by the circuit simulation unit; and a phase map generation unit generates a phase map of the circuit element on the basis of the phase calculated by the phase calculation unit.

3. 发明申请

US20170248653A1 ACTIVE NOISE SUPPRESSION FOR OPTICAL VOLTAGE SENSOR 审中-公开
公开(公告)号：US20170248653A1
公开(公告)日：2017-08-31
申请号：US15268184
申请日：2016-09-16
申请人： Tektronix, Inc.
发明人： Michael J. Mende , Richard A. Booman
IPC分类号： G01R31/308 , G01R19/00 , G01R15/22
CPC分类号： G01R31/308 , G01R1/071 , G01R15/22 , G01R15/241 , G01R15/247 , G01R19/0084 , G02F1/0123
摘要： A sensor head of a test and measurement instrument can include an input configured to receive an input signal from a device under test (DUT), an optical voltage sensor having signal input electrodes and control electrodes or one set of electrodes, wherein the input is connected to the signal input electrodes, and a bias control unit connected to the control electrodes and configured to reduce an error signal or the input signal bias control signal are electrically combined and applied to a single set of electrodes.

4. 发明申请

US20170176520A1 TUNABLE WAVELENGTH ELECTRO-OPTICAL ANALYZER 审中-公开
公开(公告)号：US20170176520A1
公开(公告)日：2017-06-22
申请号：US15269751
申请日：2016-09-19
申请人： QUALCOMM Incorporated
发明人： Ulrike Kindereit , Victoria Bruce
IPC分类号： G01R31/311 , H01S3/13
CPC分类号： G01R31/311 , G01R31/2656 , G01R31/308 , H01S3/1305
摘要： An electro-optical analyzing system is provided with a wavelength tunable laser so that a DUT may be laser illuminated at different wavelengths. The signal qualities are determined corresponding to a reflection from the DUT of illumination of the laser at multiple wavelengths. The signal quality for each wavelength can be compared to a threshold signal quality over a range of wavelengths or compared to each other to identify a wavelength that increases resolution and decreases destructive interference and cross-talk,

5. 发明申请

US20170089763A1 Infrared Sensor Array Circuit Breaker Monitoring 审中-公开
公开(公告)号：US20170089763A1
公开(公告)日：2017-03-30
申请号：US14867745
申请日：2015-09-28
申请人： Cooper Technologies Company
发明人： Benjamin Avery Freer , Stephan P. Iannce , Joseph Michael Manahan , Rick Rothenberger , John Bonaccio
IPC分类号： G01J5/00 , G01R19/00 , G01R15/18 , G06T7/00 , H04N5/33 , H04N7/18 , G06T11/60 , G01J5/10 , G01K13/00
CPC分类号： G01J5/0096 , G01J5/10 , G01J2005/106 , G01R19/0092 , G01R31/308 , H04N5/33 , H04N7/183
摘要： A thermal monitoring system includes at least one of an infrared sensor and a plurality of infrared sensors arranged in an array. Each infrared sensor has a resolution including a plurality of pixels. A controller is configured to create a thermal image of an area to be monitored based at least in part on the plurality of pixels of each infrared sensor. A thermal monitoring assembly includes an electrical panel including a plurality of electrical components located within the electrical panel. The at least one of an infrared sensor and the plurality of infrared sensors arranged in an array, either alone or in combination with additional sensors, are located inside the electrical panel. Methods of monitoring various parameters including a temperature of the plurality of electrical components located inside the electrical panel are also provided.

6. 发明申请

US20170003231A1 APPARATUS, METHOD AND COMPUTER PROGRAM PRODUCT FOR INSPECTION OF AT LEAST SIDE FACES OF SEMICONDUCTOR DEVICES 审中-公开
标题翻译：用于检查半导体器件最小面积的装置，方法和计算机程序产品
公开(公告)号：US20170003231A1
公开(公告)日：2017-01-05
申请号：US15265186
申请日：2016-09-14
申请人： KLA-Tencor Corporation
发明人： Carl Truyens
IPC分类号： G01N21/95 , H01L21/66 , G01N21/88 , H01L21/67
CPC分类号： G01N21/9503 , G01N21/8806 , G01N21/95684 , G01N2201/0636 , G01R31/308 , H01L22/12
摘要： An apparatus, a method and a computer program product for inspecting at least side faces of a semiconductor device are disclosed. A frame construction is provided, which holds a camera, defining an imaging beam path. The semiconductor device is inserted into a mirror block. The mirror block has a first mirror, a second mirror, a third mirror and a fourth mirror, wherein the mirrors are arranged such that they surround a free space in the form of a rectangle. The opposing first mirror and third mirror are fixedly mounted and the opposing second mirror and fourth mirror movably mounted. A tilted mirror directs an image of the side faces of the semiconductor substrate generated by the mirror block to the camera.
摘要翻译：公开了一种用于检查半导体器件的至少侧面的装置，方法和计算机程序产品。提供了一种框架结构，其保持相机，限定成像光束路径。将半导体器件插入镜块中。镜块具有第一镜，第二镜，第三镜和第四镜，其中所述镜布置成使得它们围绕矩形形式的自由空间。相对的第一反射镜和第三反射镜被固定地安装，并且相对的第二反射镜和第四反射镜可移动地安装。倾斜的反射镜将由镜块产生的半导体衬底的侧面的图像引导到照相机。

7. 发明申请

US20160356843A1 IC HANDLER 审中-公开
标题翻译： IC手柄
公开(公告)号：US20160356843A1
公开(公告)日：2016-12-08
申请号：US15101386
申请日：2013-12-03
申请人： HAPPYJAPAN, INC.
发明人： Shouhei Matsumoto , Mitsuo Koizumi , Fumiaki Togashi , Satoshi Ueno , Keitaro Harada , Masayoshi Yokoo
IPC分类号： G01R31/28
CPC分类号： G01R31/2891 , G01R31/2887 , G01R31/2893 , G01R31/308
摘要： An IC handler (4) of the present invention transfers an IC device (D) to a test head (2). The test head (2) is provided with a socket (3), which has a placing surface (3a) having the IC device (D) placed thereon, and which attaches the IC device (D) placed on the placing surface (3a) to the test head (2). The IC handler (4) is provided with a non-contact displacement meter (71) that is disposed by being spaced apart from the socket (3) in the direction perpendicular to the placing surface (3a). The non-contact displacement meter (71) measures a distance from the non-contact displacement meter (71) to the IC device (D) placed on the placing surface (3a) by emitting a laser beam toward the placing surface (3a) of the socket (3).
摘要翻译：本发明的IC处理器（4）将IC器件（D）传送到测试头（2）。测试头（2）设置有插座（3），其具有放置有IC器件（D）的放置面（3a），并且将放置在放置面（3a）上的IC器件（D）到测试头（2）。 IC处理器（4）设置有非接触式位移计（71），该非接触位移计（71）通过在垂直于放置表面（3a）的方向上与插座（3）间隔开来设置。非接触式位移计（71）通过向激光束朝向放置面（3a）的放置面（3a）发射激光，测量从非接触位移计（71）到放置在放置面（3a）上的IC器件（D）的距离插座（3）。

8. 发明申请

US20160306005A1 SEMICONDUCTOR DEVICE TESTING APPARATUS, SEMICONDUCTOR DEVICE TESTING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
公开(公告)号：US20160306005A1
公开(公告)日：2016-10-20
申请号：US15195478
申请日：2016-06-28
申请人： Kabushiki Kaisha Toshiba
发明人： Teruyuki OHASHI , Ryosuke llJIMA
IPC分类号： G01R31/265 , G01R31/26 , H01L21/66 , H01L29/16 , H01L29/94
CPC分类号： G01R31/2656 , G01R31/2621 , G01R31/2639 , G01R31/2642 , G01R31/308 , H01L22/14 , H01L29/1608 , H01L29/94
摘要： A semiconductor device testing apparatus according to an embodiment includes: a first terminal and a second terminal that apply voltage to a semiconductor device; and a light source that irradiates the semiconductor device with ultraviolet light.

9. 发明授权

US09417281B1 Adjustable split-beam optical probing (ASOP) 有权
标题翻译：可调分光束光学探测（ASOP）
公开(公告)号：US09417281B1
公开(公告)日：2016-08-16
申请号：US14591783
申请日：2015-01-07
申请人： Checkpoint Technologies LLC
发明人： Horst E. Groneberg , Guoqing Xiao , Krishna Kuchibhotla
IPC分类号： G01R31/311 , G01R31/309 , G01R31/308
CPC分类号： G01R31/311 , G01R31/308 , G01R31/309
摘要： A practical method for greatly enhancing the strength of the modulated signal from laser probing of IC's is described. An IC device under test (DUT) is scanned with two spatially separated laser beams. The output from a single laser source is split into two separate components with each focused on different areas of the DUT. The separation between the beams and their intensity is adjustable to maximize the strength of the modulated return signal. Typically a NIR laser is used with flip-chip IC devices to account for the band-gap (transmission) characteristics of the substrate material. Upon reflection from the DUT, the reflected beams are recombined to interfere with one another. The phase difference of the two beams is adjustable to gain maximum interference. This signal is then processed to obtain the waveforms that correspond to the actions of the active gates and nodes as the chip is electronically cycled through its prescribed test loop. This method significantly improves the signal to noise ratio and reduces the time it takes to acquire a useful voltage waveform.
摘要翻译：描述了一种用于大大提高IC激光探测调制信号强度的实用方法。被测试的IC器件（DUT）用两个空间分离的激光束扫描。来自单个激光源的输出被分成两个单独的组件，每个组件聚焦在DUT的不同区域上。光束之间的距离及其强度是可调节的，以最大化调制返回信号的强度。通常，NIR激光器与倒装芯片IC器件一起使用以考虑衬底材料的带隙（透射）特性。在来自DUT的反射之后，反射光束被重新组合以相互干扰。两个光束的相位差可调，以获得最大的干扰。然后处理该信号以获得与芯片通过其规定的测试回路电子循环的活动门和节点的动作相对应的波形。该方法显着提高了信噪比，并缩短了获取有用电压波形所需的时间。

10. 发明申请

US20160161555A1 DETECTING APPARATUS AND DETECTING METHOD 有权
标题翻译：检测装置和检测方法
公开(公告)号：US20160161555A1
公开(公告)日：2016-06-09
申请号：US14744576
申请日：2015-06-19
申请人： BOE TECHNOLOGY GROUP CO., LTD. , HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Chuanbing WEI , Xiaoming ZHANG , Song WU
IPC分类号： G01R31/308 , G01N21/95 , G01N21/88
CPC分类号： G01R31/308 , G01N21/8851 , G01N21/95 , G01N2021/9513
摘要： The present invention provides a detecting apparatus and a detecting method. The detecting apparatus comprises: a base, a light source module, an image generating unit and a detecting unit. The light source module is configured to generate detecting light and cause the detecting light to irradiate towards the image generating unit after passing through an area of a shorting bar circuit in a panel. The image generating unit is configured to receive the detecting light irradiating thereon, and generate a detecting image of the area of the shorting bar circuit. The detecting unit is configured to detect whether the shorting bar circuit in the panel is cut off based on the detecting image. As the detecting light passing through the panel lasts for a longer time and is of higher brightness, the detecting image generated by the image generating unit is clearer.
摘要翻译：本发明提供一种检测装置和检测方法。检测装置包括：基座，光源模块，图像产生单元和检测单元。光源模块被配置为产生检测光，并且使得检测光在通过面板中的短路电路的区域之后朝着图像生成单元照射。图像生成单元被配置为接收在其上照射的检测光，并且生成短路电路的区域的检测图像。检测单元被配置为基于检测图像来检测面板中的短路电路是否被切断。当通过面板的检测光持续较长时间并且具有较高的亮度时，由图像生成单元生成的检测图像更清晰。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式