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11. 发明授权

US09905397B2 Ion implantation apparatus and scanning waveform preparation method 有权
公开(公告)号：US09905397B2
公开(公告)日：2018-02-27
申请号：US15457698
申请日：2017-03-13
申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
发明人： Shiro Ninomiya , Akihiro Ochi
IPC分类号： H01J37/00 , H01J37/317 , H01J37/08 , H01J37/147 , H01J37/244
CPC分类号： H01J37/3171 , H01J37/08 , H01J37/1474 , H01J37/244 , H01J37/304 , H01J37/3172 , H01J2237/24535 , H01J2237/30488
摘要： An ion implantation apparatus includes a beam scanner that provides reciprocating beam scanning in a beam scanning direction, a beam measurer that measures a beam current intensity distribution in the beam scanning direction at a downstream of the beam scanner, and a controller. The controller includes a scanning waveform preparing unit that determines whether or not a measured beam current intensity distribution measured by the beam measurer with use of a given scanning waveform fits a target non-uniform dose amount distribution, and that, in a case of fitting, correlates the given scanning waveform with the target non-uniform dose amount distribution.

12. 发明授权

US09837248B2 Ion implantation apparatus and method of controlling ion implantation apparatus 有权
公开(公告)号：US09837248B2
公开(公告)日：2017-12-05
申请号：US14605404
申请日：2015-01-26
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Masahide Ooura , Daisuke Imai , Shiro Ninomiya
IPC分类号： H01J37/317 , H01J37/30
CPC分类号： H01J37/3171 , H01J37/3002 , H01J2237/0206 , H01J2237/18 , H01J2237/304 , H01J2237/30472
摘要： In an ion implantation apparatus, an interruption member interrupts an ion beam B in the middle of a beam line. A plasma shower device is provided at the downstream side of the interruption member in the beam line. A control unit causes the interruption member to interrupt the ion beam B during an ignition start period of the plasma shower device. The interruption member may be provided at the upstream side of at least one high-voltage electric field type electrode in the beam line. A gas supply unit may supply a source gas to the plasma shower device. The control unit may start the supply of the source gas from the gas supply unit after the ion beam B is interrupted by the interruption member.

13. 发明授权

US09520265B2 Ion implantation apparatus 有权
标题翻译：离子注入装置
公开(公告)号：US09520265B2
公开(公告)日：2016-12-13
申请号：US14558187
申请日：2014-12-02
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Takanori Yagita
IPC分类号： H01J37/12 , H01J37/317 , H01J37/21
CPC分类号： H01J37/21 , H01J37/12 , H01J37/3171 , H01J2237/1415 , H01J2237/303 , H01J2237/30477
摘要： A multistage quadrupole lens system in an ion implantation apparatus includes a first quadrupole lens and a third quadrupole lens. A first bore radius of the first quadrupole lens may be smaller than a third bore radius of the third quadrupole lens. The multistage quadrupole lens system may further include a second quadrupole lens placed between the first quadrupole lens and the third quadrupole lens. A second bore radius of the second quadrupole lens may take a value lying between the first bore radius of the first quadrupole lens and the third bore radius of the third quadrupole lens (i.e., an intermediate value between them).
摘要翻译：离子注入装置中的多级四极透镜系统包括第一四极透镜和第四四极透镜。第一四极透镜的第一孔半径可以小于第三四极透镜的第三孔半径。多级四极透镜系统还可以包括放置在第一四极透镜和第三四极透镜之间的第二四极透镜。第二四极透镜的第二孔半径可以取位于第一四极透镜的第一孔半径和第三四极透镜的第三孔半径之间的值（即它们之间的中间值）。

14. 发明授权

US09502759B2 Antenna cover and plasma generating device using same 有权
标题翻译：天线罩和使用其的等离子体发生装置
公开(公告)号：US09502759B2
公开(公告)日：2016-11-22
申请号：US14566133
申请日：2014-12-10
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Shiro Ninomiya , Masateru Sato
IPC分类号： H01Q1/26 , H01Q1/40 , H05H1/46 , H01J37/32 , H01Q1/42 , H01Q7/00
CPC分类号： H01Q1/40 , H01J37/321 , H01J37/3211 , H01Q1/42 , H01Q1/421 , H01Q7/00 , H05H1/46 , H05H2001/4652 , H05H2001/4667
摘要： An antenna cover that protects a surface of an antenna provided in a plasma chamber and exciting an electric field with a high frequency to an inner portion of the plasma chamber is provided. In the antenna cover, the thickness of the antenna cover in at least one direction among directions orthogonal to the surface of the antenna is different according to a position on the surface, such that space dependency of an electric potential on an external surface of the antenna cover decreases. In the antenna cover, the thickness of at least one direction may be changed along an extension direction of the antenna.
摘要翻译：提供了一种天线罩，其保护设置在等离子体室中的天线的表面并激发高频电场到等离子体室的内部。在天线罩中，根据天线的表面位置，与天线表面正交的方向中的至少一个方向的天线罩的厚度不同，使得天线的外表面上的电位的空间依赖性覆盖减少。在天线罩中，沿着天线的延伸方向可以改变至少一个方向的厚度。

15. 发明授权

US09449791B2 Beam irradiation apparatus and beam irradiation method 有权
标题翻译：光束照射装置和光束照射方法
公开(公告)号：US09449791B2
公开(公告)日：2016-09-20
申请号：US14736928
申请日：2015-06-11
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Mitsukuni Tsukihara , Noriyasu Ido , Noriyuki Suetsugu
IPC分类号： H01J37/302 , H01J37/304 , H01J37/317
CPC分类号： H01J37/304 , H01J37/3171 , H01J2237/30455 , H01J2237/31701 , H01J2237/31703
摘要： Provided is a beam irradiation apparatus including: a beam scanner that is configured such that a charged particle beam is reciprocatively scanned in a scanning direction; a measurement device that is capable of measuring an angular component of charged particles incident into a region of a measurement target; and a data processor that calculates effective irradiation emittance of the charged particle beam using results measured by the measurement device. The measurement device measures a time dependent value for angular distribution of the charged particle beam. The data processor transforms time information included in the time dependent value for the angular distribution to position information and thus calculates the effective irradiation emittance. The effective irradiation emittance represents emittance of a virtual beam bundle, the virtual beam bundle being formed by summing portions of the charged particle beam which are incident into the region of the measurement target.
摘要翻译：本发明提供一种束照射装置，包括：束扫描器，被配置为使得带电粒子束沿扫描方向往复扫描; 测量装置，其能够测量入射到测量对象的区域中的带电粒子的角分量; 以及使用由测量装置测量的结果计算带电粒子束的有效照射发射率的数据处理器。测量装置测量带电粒子束的角度分布的时间依赖值。数据处理器将角分布的时间相关值中包含的时间信息变换为位置信息，从而计算有效的照射发射率。有效辐射发射率表示虚拟束束的发射率，虚拟束束是通过对入射到测量目标区域的带电粒子束的部分进行求和而形成的。

16. 发明授权

US09318298B2 Ion generator and ion generating method 有权
标题翻译：离子发生器和离子发生方法
公开(公告)号：US09318298B2
公开(公告)日：2016-04-19
申请号：US14536946
申请日：2014-11-10
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Masateru Sato
IPC分类号： G21K5/00 , H01J27/08 , H01J37/08 , H01J37/317
CPC分类号： H01J27/08 , H01J37/08 , H01J37/3171 , H01J2237/31705
摘要： An ion generator is provided with: an arc chamber that is at least partially made up of a material containing carbon; a thermal electron emitter that emits thermal electrons into the arc chamber; and a gas introducer that introduces a source gas and a compound gas into the arc chamber. The source gas to be introduced into the arc chamber contains a halide gas, and the compound gas to be introduced into the arc chamber contains a compound having carbon atoms and hydrogen atoms.
摘要翻译：离子发生器具有：至少部分由含碳材料组成的电弧室; 将热电子发射到电弧室中的热电子发射体; 以及将源气体和复合气体引入电弧室的气体导入器。被引入电弧室的源气体含有卤化物气体，导入电弧室的化合物气体含有具有碳原子和氢原子的化合物。

17. 发明授权

US09236222B2 Ion implantation apparatus and ion implantation method 有权
标题翻译：离子注入装置和离子注入方法
公开(公告)号：US09236222B2
公开(公告)日：2016-01-12
申请号：US14732239
申请日：2015-06-05
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Takanori Yagita , Mitsuaki Kabasawa
IPC分类号： H01J37/317 , H01J37/147 , H01J37/10
CPC分类号： H01J37/3171 , H01J37/147 , H01J37/1474
摘要： An ion implantation apparatus includes a beam scanning unit and a beam parallelizing unit arranged downstream thereof. The beam scanning unit has a scan origin in a central part of the scanning unit on a central axis of an incident ion beam. The beam parallelizing unit has a focal point of a parallelizing lens at the scan origin. The ion implantation apparatus is configured such that a focal position of the incident beam into the scanning unit is located upstream of the scan origin along the central axis of the incident beam. The focal position of the incident beam into the scanning unit is adjusted to be at a position upstream of the scan origin along the central axis of the incident beam such that a divergence phenomenon caused by the space charge effect in an exiting ion beam from the parallelizing unit is compensated.
摘要翻译：离子注入装置包括光束扫描单元和布置在其下游的光束并行化单元。光束扫描单元在入射离子束的中心轴上的扫描单元的中心部分具有扫描原点。光束平行化单元具有在扫描原点处的平行化透镜的焦点。离子注入装置被构造成使得入射到扫描单元中的入射光束的焦点位置沿着入射光束的中心轴线位于扫描原点的上游。将入射光束到扫描单元中的焦点位置被调整为沿着入射光束的中心轴的扫描原点的上游位置，使得由离开的离子束中的空间电荷效应引起的发散现象来自并联单位得到补偿。

18. 发明授权

US09208996B2 Ion implantation apparatus and ion implantation method 有权
标题翻译：离子注入装置和离子注入方法
公开(公告)号：US09208996B2
公开(公告)日：2015-12-08
申请号：US14077746
申请日：2013-11-12
申请人： SEN Corporation
发明人： Mitsukuni Tsukihara , Mitsuaki Kabasawa
IPC分类号： H01J37/317 , H01J37/302
CPC分类号： H01J37/3171 , H01J37/302 , H01J2237/0455 , H01J2237/047 , H01J2237/30472
摘要： An ion implantation apparatus includes a beamline device for transporting ions from an ion source to an implantation processing chamber. The implantation processing chamber includes a workpiece holder for mechanically scanning a workpiece with respect to a beam irradiation region. The beamline device may be operated under a first implantation setting configuration suitable for transport of a low energy/high current beam for high-dose implantation into the workpiece, or a second implantation setting configuration suitable for transport of a high energy/low current beam for low-dose implantation into the workpiece. A beam center trajectory being a reference in a beamline is equal from the ion source to the implantation processing chamber in the first implantation setting configuration and the second implantation setting configuration.
摘要翻译：离子注入装置包括用于将离子从离子源输送到注入处理室的束线装置。植入处理室包括用于相对于束照射区域机械地扫描工件的工件保持器。束线装置可以在适合于将高能量/高电流束输送到工件中的低能量/高电流束的第一注入设置配置下运行，或者适于传输高能/低电流束的第二注入设置配置低剂量注入工件。在第一植入设置配置和第二植入设置配置中，在束线中作为参考的束中心轨迹从离子源到注入处理室相等。

19. 发明授权

US09208991B1 Ion implantation apparatus 有权
标题翻译：离子注入装置
公开(公告)号：US09208991B1
公开(公告)日：2015-12-08
申请号：US14721752
申请日：2015-05-26
申请人： Sumitomo Heavy Industries Ion Technology Co., Ltd.
发明人： Hiroshi Matsushita , Mitsuaki Kabasawa , Yoshitaka Amano , Takanori Yagita
IPC分类号： H01J3/18 , H01J37/147 , H01J37/317 , H01J37/08
CPC分类号： H01J37/1477 , H01J37/08 , H01J37/3171 , H01J2237/30483
摘要： An ion implantation apparatus includes a scanning unit scanning the ion beams in a horizontal direction perpendicular to the reference trajectory and a downstream electrode device disposed downstream of the scanning electrode device. The scanning electrode device includes a pair of scanning electrodes disposed to face each other in the horizontal direction with the reference trajectory interposed therebetween. The downstream electrode device includes an electrode body configured such that, with respect to an opening width in a vertical direction perpendicular to both the reference trajectory and the horizontal direction and/or an opening thickness in a direction along the reference trajectory, the opening width and/or the opening thickness in a central portion in which the reference trajectory is disposed is different from the opening width and/or the opening thickness in the vicinity of a position facing the downstream end of the scanning electrode.
摘要翻译：离子注入装置包括：扫描单元，沿垂直于参考轨迹的水平方向扫描离子束;以及下游电极装置，设置在扫描电极装置的下游。扫描电极装置包括一对沿水平方向彼此相对设置的扫描电极，其间插入有基准轨迹。下游电极装置包括：电极体，其构成为：相对于垂直于基准轨迹和水平方向的垂直方向的开口宽度和/或沿着基准轨迹的方向的开口厚度，开口宽度和配置基准轨迹的中央部的开口厚度与扫描电极的下游端的位置附近的开口宽度和/或开口厚度不同。

20. 发明授权

US09208983B2 Ion generation method and ion source 有权
标题翻译：离子生成法和离子源
公开(公告)号：US09208983B2
公开(公告)日：2015-12-08
申请号：US14011575
申请日：2013-08-27
申请人： SEN Corporation
发明人： Masateru Sato
IPC分类号： H01J37/08 , H01J1/20 , H01J5/10 , H01J27/08
CPC分类号： H01J5/10 , H01J27/08 , H01J37/08 , H01J2237/082 , H01J2237/31701
摘要： An ion generation method uses a direct current discharge ion source provided with an arc chamber formed of a high melting point material, and includes: generating ions by causing molecules of a source gas to collide with thermoelectrons in the arc chamber and producing plasma discharge; and causing radicals generated in generating ions to react with a liner provided to cover an inner wall of the arc chamber at least partially. The liner is formed of a material more reactive to radicals generated as the source gas is dissociated than the material of the arc chamber.
摘要翻译：离子产生方法使用设置有由高熔点材料形成的电弧室的直流放电离子源，并且包括：通过使源气体的分子与电弧室中的热电子碰撞并产生等离子体放电而产生离子; 并且使产生离子产生的自由基与至少部分地覆盖电弧室的内壁的衬垫反应。衬垫由与源电极气体相比所产生的自由基反应的材料形成为比电弧室的材料更为反应。

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