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    • 13. 发明授权
    • High throughput multi-wafer epitaxial reactor
    • 高通量多晶圆外延反应堆
    • US08663753B2
    • 2014-03-04
    • US13664332
    • 2012-10-30
    • Crystal Solar, Incorporated
    • Visweswaren SivaramakrishnanKedarnath SangamTirunelveli S. RaviAndrzej KaszubaQuoc Vinh
    • C23C8/00C23C16/00
    • C23C16/481C23C16/0209C23C16/455C23C16/4582C23C16/46C23C16/463C23C16/54C30B25/105C30B25/12C30B29/06
    • An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.
    • 公开了一种能够在多个晶片上同时沉积薄膜的外延反应器。 在沉积期间,许多晶片被包含在晶片套筒内,其包括间隔开的多个晶片承载板,以最小化处理体积。 工艺气体优先流入由一个或多个灯模块加热的晶片套筒的内部容积。 吹扫气体在反应器室内的晶片套筒外部流动,以最小化壁沉积。 此外,灯模组中各灯的照明顺序可以进一步提高晶片套筒内沉积速率变化的线性。 为了改善均匀性,工艺气体流动的方向可以在横流构型中变化。 将灯排序与多反应器系统中的交叉流处理相结合,可实现高通量沉积,具有良好的膜均匀性和有效利用工艺气体。
    • 15. 发明授权
    • Apparatus for atomic layer deposition on a moving substrate
    • 用于原子层沉积在移动衬底上的装置
    • US08657959B2
    • 2014-02-25
    • US12970198
    • 2010-12-16
    • Geoffrey NunesRichard Dale Kinard
    • Geoffrey NunesRichard Dale Kinard
    • C23C16/00B05C11/00H01L21/469C23C8/00
    • C23C16/545C23C16/4412C23C16/45551C23C16/45574C23C16/45582
    • An apparatus for atomic layer deposition of a material on a moving substrate comprises a conveying arrangement for moving a substrate along a predetermined planar or curved path of travel and a coating bar having at least one precursor delivery channel. The precursor delivery channel conducts a fluid containing a material to be deposited on a substrate toward the path of travel. When in use, a substrate movable along the path of travel defines a gap between the outlet end of the precursor delivery channel and the substrate. The gap defines an impedance Zg to a flow of fluid from the precursor delivery channel. A flow restrictor is disposed within the precursor delivery channel that presents a predetermined impedance Zfc to the flow therethrough. The restrictor is sized such that the impedance Zfc is at least five (5) times, and more preferably at least fifteen (15) times, the impedance Zg. The impedance Zfc has a friction factor f. The restrictor in the precursor delivery channel is sized such that the impedance Zfc has a friction factor f that is less than 100, and preferably less than 10.
    • 用于在移动的衬底上原子层沉积材料的装置包括用于沿着预定的平面或弯曲行进路径移动衬底的输送装置和具有至少一个前体输送通道的涂布条。 前体输送通道将包含要沉积在基底上的材料的流体传导到行进路径。 当使用时,沿着行进路径移动的基板限定了前体输送通道的出口端和基底之间的间隙。 间隙限定了来自前体输送通道的流体流动的阻抗Zg。 流量限制器设置在前体输送通道内,其向穿过其中的流动呈现预定阻抗Zfc。 限流器的尺寸使得阻抗Zfc为阻抗Zg至少五(5)倍,更优选为至少十五(15)倍。 阻抗Zfc具有摩擦系数f。 前体输送通道中的限制器的尺寸使得阻抗Zfc的摩擦系数f小于100,优选小于10。
    • 18. 发明授权
    • Carbonitriding low manganese medium carbon steel
    • 碳氮共渗低锰中碳钢
    • US08388767B2
    • 2013-03-05
    • US10936239
    • 2004-09-08
    • Huaxin LiSilvio M. Yamada
    • Huaxin LiSilvio M. Yamada
    • C23C8/00C23C22/00
    • C23C8/34C23C8/32
    • A method for processing a low manganese steel is more cost effective and improves residual stress, bending fatigue, and surface characteristics for driveline components. The low manganese steel comprises in combination, by weight, about 0.30-0.75% carbon (C) and 0.15-0.40% manganese (Mn), with the balance being essentially iron (Fe). The method for processing the low manganese steel includes carbonitriding the low manganese steel at temperatures between 1600° F. to 1750° F. for a time period of about three to six hours. The low manganese steel is subsequently quenched in a water based solution that is kept at room temperature. The process provides the low manganese steel with an irregular case profile with a core hardness of no more than 50 Rockwell C and a surface hardness of approximately 58-63 Rockwell C. Further, the process provides the low manganese steel with little or no intergranular oxidation or surface high temperature transformation product.
    • 一种处理低锰钢的方法更具成本效益,并改善传动系部件的残余应力,弯曲疲劳和表面特性。 低锰钢按重量计包含约0.30-0.75%的碳(C)和0.15-0.40%的锰(Mn),余量基本上是铁(Fe)。 用于处理低锰钢的方法包括在1600°F至1750°F之间的温度下将低锰钢碳氮共渗约3-6小时。 随后将低锰钢在保持在室温的水溶液中淬灭。 该方法为低锰钢提供不规则的外形轮廓,其核心硬度不超过50洛氏硬度,表面硬度约为58-63洛氏硬度C.此外,该方法提供了少量或不含晶间氧化的低锰钢 或表面高温转化产物。
    • 19. 发明申请
    • METHOD FOR MANUFACTURING ELECTRODE STRUCTURE, ELECTRODE STRUCTURE, AND CAPACITOR
    • 电极结构,电极结构和电容器的制造方法
    • US20120261162A1
    • 2012-10-18
    • US13513958
    • 2011-03-30
    • Kunihiko NakayamaZenya AshitakaHidetoshi InoueMiho Suzuki
    • Kunihiko NakayamaZenya AshitakaHidetoshi InoueMiho Suzuki
    • H01B5/00C23C28/00C23C8/00B05D5/12B05D3/02
    • H01G9/0032H01G9/042H01G9/045H01G9/07
    • Provided are an electrode structure capable of suppressing a leakage current, having a high capacitance, allowing an electrical short circuit caused through contact with an electrolyte to be suppressed, and operable to be applied as an anode of a capacitor; a method for manufacturing the electrode structure; and a capacitor including the electrode structure. The method for manufacturing the electrode structure includes: a covering layer formation step of forming on a surface of an aluminum material a covering layer of a dielectric precursor including valve metal; and a reduction heating step of heating in a reducing atmosphere including no carbon the aluminum material having the covering layer formed thereon. The electrode structure includes: an aluminum material; a covering layer being formed on a surface of the aluminum material, including valve metal, and having an electrically conductive portion; and an interposing layer being formed between the aluminum material and the covering layer and including aluminum and oxygen.
    • 提供一种能够抑制具有高电容的漏电流的电极结构,允许抑制与电解质接触引起的电短路,并可操作地作为电容器的阳极施加; 电极结构体的制造方法; 以及包括电极结构的电容器。 电极结构体的制造方法包括:覆盖层形成工序,在铝材的表面上形成包含阀金属的电介质前体的覆盖层; 以及还原加热步骤,其在不含碳的还原气氛中加热其上形成有覆盖层的铝材料。 电极结构包括:铝材料; 覆盖层形成在铝材的表面上,包括阀金属,并具有导电部分; 并且在铝材料和覆盖层之间形成包括铝和氧的中介层。