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1. 发明公开

US20240218508A1 RUNOUT AND WOBBLE MEASUREMENT FIXTURES 审中-公开
公开(公告)号：US20240218508A1
公开(公告)日：2024-07-04
申请号：US18609379
申请日：2024-03-19
申请人： ASM IP Holding B.V.
发明人： Aniket Nitin Patil , Saket Rathi , Sam Kim , Shiva K.T. Rajavelu Muralidhar
IPC分类号： C23C16/455 , B23Q3/00 , C23C16/458 , C23C16/52
CPC分类号： C23C16/455 , B23Q3/00 , C23C16/4582 , C23C16/52
摘要： A fixture is provided. The fixture includes a base, a turntable, a first sensor, and a second sensor. The turntable is supported on the base, is rotatable about a rotation axis, and is configured to slidably seat a susceptor assembly for rotation about the rotation axis. The first sensor is fixed relative to the base, is radially offset from the rotation axis, and is configured to determine ex-situ runout of the susceptor assembly. The second sensor is fixed relative to the first sensor, is axially offset from the first sensor, and is configured to determine ex-situ wobble of the susceptor assembly. Fixture arrangements and methods of determining ex-situ runout and ex-situ wobble of susceptor assemblies for semiconductor processing systems are also described.

2. 发明授权

US11946141B2 Automated conveyance of articles in chemical vapor processing 有权
公开(公告)号：US11946141B2
公开(公告)日：2024-04-02
申请号：US17414129
申请日：2019-09-12
申请人： Hewlett-Packard Development Company, L.P.
发明人： Michael Anthony Crockett
IPC分类号： C23C16/458 , C23C16/54
CPC分类号： C23C16/4582 , C23C16/54
摘要： An apparatus for automated chemical vapor processing. The apparatus includes a chemical vapor processing chamber to treat articles with surface-smoothing chemical vapor and an article loading chamber to receive articles pending treatment by the chemical vapor processing chamber. The apparatus further includes an automated conveyor to move the articles between the article loading chamber and the chemical vapor processing chamber. The apparatus further includes an air lock to connect the article loading chamber to the chemical vapor processing chamber, and a controller to control the automated conveyor to move the articles between the article loading chamber and the chemical vapor processing chamber, and to control the air lock to seal the chemical vapor processing chamber from the article loading chamber when the automated conveyor is not moving articles between the article loading chamber and the chemical vapor processing chamber.

3. 发明授权

US11885019B2 Susceptor with ring to limit backside deposition 有权
公开(公告)号：US11885019B2
公开(公告)日：2024-01-30
申请号：US17395240
申请日：2021-08-05
申请人： ASM IP HOLDING B.V.
发明人： Mark Hawkins , Matthew G. Goodman , Shawn Thomas
IPC分类号： C23C16/455 , H01L21/687 , C23C16/458 , H01L21/67
CPC分类号： C23C16/45521 , C23C16/458 , C23C16/4582 , C23C16/4583 , C23C16/4585 , H01L21/6875 , H01L21/68735 , H01L21/67115
摘要： A susceptor including a generally circular body having a face with a radially inward section and a radially outward section proximate a circumference of the body, the radially outward section having at least one ring extending upward for contacting a bottom surface of a substrate, and wherein the radially inward section lacks a ring extending upward from the face.

4. 发明授权

US11692267B2 Plasma induced modification of silicon carbide surface 有权
公开(公告)号：US11692267B2
公开(公告)日：2023-07-04
申请号：US17139211
申请日：2020-12-31
申请人： Applied Materials, Inc.
发明人： Francis Kanyiri Mungai , Vijayabhaskara Venkatagiriyappa , Yung-Cheng Hsu , Keiichi Tanaka , Mario D. Silvetti , Mihaela A. Balseanu
IPC分类号： C23C16/32 , C23C16/455 , H01L21/687 , C23C16/458
CPC分类号： C23C16/45536 , C23C16/325 , C23C16/4582 , C23C16/45544 , H01L21/68757
摘要： Methods for modifying a susceptor having a silicon carbide (SiC) surface comprising exposing the silicon carbide surface (SiC) to an atmospheric plasma are described. The method increases the atomic oxygen content of the silicon carbide (SiC) surface.

5. 发明申请

US20190211447A1 GAS DIFFUSION DEVICE AND FILM-FORMING APPARATUS 审中-公开
公开(公告)号：US20190211447A1
公开(公告)日：2019-07-11
申请号：US15577666
申请日：2017-09-21
申请人： Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
发明人： Gaozhen WANG
IPC分类号： C23C16/455 , C23C16/458 , H01L51/52 , H01L51/56 , C23C14/04
CPC分类号： C23C16/45508 , C23C14/04 , C23C16/455 , C23C16/45559 , C23C16/4582 , H01L51/52 , H01L51/56
摘要： Embodiments of the present disclosure provide a gas diffusion device and a film-forming apparatus. The gas diffusion device includes a cover plate, a first diffusion part and a second diffusion part. The first diffusion part cooperates with the cover plate to define a first diffusion space and a gas inlet that communicates with the first diffusion space. The second diffusion part cooperates with the cover plate to define a second diffusion space and a gas outlet that communicates with the second diffusion space. The second diffusion space communicates with the first diffusion space. In a direction from the gas inlet to the gas outlet, a gas between the first diffusion part and the cover plate decreases in height gradually, and a gap between the second diffusion part and the cover plate increases in height gradually at first and then decreases in height gradually.

6. 发明申请

US20180298491A1 Substrate Holder for Graphene Film Synthesis, and Uses Thereof 审中-公开
公开(公告)号：US20180298491A1
公开(公告)日：2018-10-18
申请号：US16012178
申请日：2018-06-19
申请人： International Business Machines Corporation
发明人： Ageeth A. Bol , Xuesong Li
IPC分类号： C23C16/26 , B82Y40/00 , B82Y30/00 , C23C16/458 , C01B32/186
CPC分类号： C23C16/26 , B82Y30/00 , B82Y40/00 , C01B32/186 , C23C16/4582
摘要： An apparatus and method for graphene film synthesis. The apparatus includes a quasi-enclosed substrate holder which includes one open side, a cap disposed over the one open side of the quasi enclosed substrate holder, and a substrate for graphene film synthesis located inside the quasi enclosed substrate holder. The method includes placing a substrate for graphene film synthesis inside of a quasi-enclosed substrate holder and generating a graphene film on the substrate via chemical vapor deposition, wherein the quasi enclosed substrate holder includes one open side and a cap disposed over the open side of the quasi enclosed substrate holder.

7. 发明申请

US20180247845A1 Substrate Carrier 审中-公开
公开(公告)号：US20180247845A1
公开(公告)日：2018-08-30
申请号：US15755184
申请日：2016-08-02
申请人： MEYER BURGER (GERMANY) GMBH
发明人： SEBASTIAN RASCHKE , ERIK ANSORGE , MIRKO KEHR , CHRISTIAN BOEHM
IPC分类号： H01L21/673 , H01L21/687 , H01L21/67 , C23C16/458
CPC分类号： H01L21/67333 , C23C16/4582 , H01L21/67011 , H01L21/68735 , H01L21/68771
摘要： A substrate carrier includes a substrate carrier plate having a front-sided substrate carrier surface on which at least one substrate receiving area is provided for receiving a respective substrate. The substrate carrier is intended to enable a secure support of the substrate and a simple, damage-free removal of the substrate from the substrate carrier when operating in a fast manner, preferably without impairment of the characteristics of the substrate or the substrate processing. Therefore, the substrate receiving area has an interior area and an exterior area running around the interior area. The exterior area has spaced plateaus which are raised compared to a surface of the interior area for the support of edge areas of the substrates. Ventilation channels are provided between the plateaus.

8. 发明授权

US09892927B2 System and method for mitigating oxide growth in a gate dielectric 有权
公开(公告)号：US09892927B2
公开(公告)日：2018-02-13
申请号：US15443151
申请日：2017-02-27
申请人： Texas Instruments Incorporated
发明人： Malcolm J. Bevan , Haowen Bu , Hiroaki Niimi , Husam N. Alshareef
IPC分类号： H01J37/00 , H01L21/00 , H01L21/28 , H01L21/02 , H01L29/51 , H01J37/32 , C23C16/458 , C23C16/455
CPC分类号： H01L21/28158 , C23C16/45557 , C23C16/4582 , H01J37/32752 , H01J37/32825 , H01J37/32899 , H01J2237/3321 , H01L21/02181 , H01L21/0223 , H01L21/02255 , H01L21/02318 , H01L21/02323 , H01L21/02326 , H01L21/02329 , H01L21/02332 , H01L21/0234 , H01L21/28035 , H01L21/28167 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28229 , H01L21/3105 , H01L21/31604 , H01L21/318 , H01L21/3205 , H01L21/324 , H01L21/67161 , H01L21/67167 , H01L21/67196 , H01L21/67201 , H01L21/6776 , H01L29/42364 , H01L29/4908 , H01L29/4916 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66477 , H01L29/78
摘要： Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.

9. 发明申请

US20170170022A1 SYSTEM AND METHOD FOR MITIGATING OXIDE GROWTH IN A GATE DIELECTRIC 审中-公开
公开(公告)号：US20170170022A1
公开(公告)日：2017-06-15
申请号：US15443151
申请日：2017-02-27
申请人： Texas Instruments Incorporated
发明人： Malcolm J. Bevan , Haowen Bu , Hiroaki Niimi , Husam N. Alshareef
IPC分类号： H01L21/28 , C23C16/455 , H01J37/32 , C23C16/458 , H01L21/02 , H01L29/51
CPC分类号： H01L21/28158 , C23C16/45557 , C23C16/4582 , H01J37/32752 , H01J37/32825 , H01J37/32899 , H01J2237/3321 , H01L21/02181 , H01L21/0223 , H01L21/02255 , H01L21/02318 , H01L21/02323 , H01L21/02326 , H01L21/02329 , H01L21/02332 , H01L21/0234 , H01L21/28035 , H01L21/28167 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28229 , H01L21/3105 , H01L21/31604 , H01L21/318 , H01L21/3205 , H01L21/324 , H01L21/67161 , H01L21/67167 , H01L21/67196 , H01L21/67201 , H01L21/6776 , H01L29/42364 , H01L29/4908 , H01L29/4916 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66477 , H01L29/78
摘要： Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth of the gate dielectric layer between at least two sequential process steps used in the fabrication the gate dielectric structure. Maintaining the gate dielectric layer in an ambient effective to mitigate oxide growth also improves the uniformity of nitrogen implanted in the gate dielectric.

10. 发明申请

US20170076935A1 FLOATING WAFER TRACK WITH LATERAL STABILIZATION MECHANISM 审中-公开
标题翻译：具有侧向稳定机构的浮动轨迹
公开(公告)号：US20170076935A1
公开(公告)日：2017-03-16
申请号：US15363348
申请日：2016-11-29
申请人： ASM INTERNATIONAL N.V.
发明人： Ernst Hendrik August Granneman
IPC分类号： H01L21/02 , C23C16/44 , C23C16/458 , C23C16/455
CPC分类号： H01L21/0228 , C23C16/4412 , C23C16/45548 , C23C16/45551 , C23C16/4582 , H01L21/02178 , H01L21/67784
摘要： An apparatus (100) comprising:—a process tunnel (102) including a lower tunnel wall (120), an upper tunnel wall (130), and two lateral tunnel walls (108), wherein said tunnel walls together bound a process tunnel space (104) that extends in a transport direction (T);—a plurality of gas injection channels (122, 132), provided in both the lower and the upper tunnel wall, wherein the gas injection channels in the lower tunnel wall are configured to provide a lower gas bearing (124), while the gas injection channels in the upper tunnel wall are configured to provide an upper gas bearing (134), said gas bearings being configured to floatingly support and accommodate said substrate there between; and—a plurality of gas exhaust channels (110), provided in both said intend tunnel walls (108), wherein the gas exhaust channels in each lateral tunnel wall are spaced apart in the transport direction.
摘要翻译：一种设备（100），包括： - 包括下部隧道壁（120），上部隧道壁（130）和两个横向隧道壁（108）的工艺隧道（102），其中所述隧道壁一起结合了过程隧道空间（104），其沿输送方向（T）延伸; - 设置在所述下隧道壁和所述上隧道壁中的多个气体注入通道（122,132），其中所述下隧道壁中的气体注入通道被配置为提供较低的气体轴承（124），而上部隧道壁中的气体注入通道构造成提供上部气体轴承（134），所述气体轴承构造成在其间漂浮地支撑并容纳所述基底; 和设置在两个所述预期隧道壁（108）中的多个排气通道（110），其中每个横向隧道壁中的排气通道在运输方向上间隔开。

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