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11. 发明公开

US20230282768A1 LED Structure and Manufacturing Method thereof, and LED Device 审中-公开
公开(公告)号：US20230282768A1
公开(公告)日：2023-09-07
申请号：US18166885
申请日：2023-02-09
申请人： Enkris Semiconductor (Wuxi), Ltd.
发明人： Weihua LIU
IPC分类号： H01L33/12 , H01L33/00 , H01L33/04 , H01L33/32 , H01L33/50 , H01L33/56
CPC分类号： H01L33/12 , H01L33/007 , H01L33/04 , H01L33/32 , H01L33/508 , H01L33/56 , H01L2933/0083
摘要： Disclosed are an LED structure, an LED device and a manufacturing method for the LED structure. The LED structure includes a substrate structure including a substrate and a plurality of first stress modulation layers located on the substrate periodically and separately; and a light-emitting unit located on the substrate structure; wherein the substrate structure includes a first region of which upper surface is the first stress modulation layer and a second region of which upper surface is the substrate, and a light-emitting unit located on the first region and a light-emitting unit located on the second region have different light-emitting wavelengths, which realizes a light-emitting unit with two kinds of main light-emitting wavelengths on the same substrate.

12. 发明授权

US11728458B2 Semiconductor light-emitting device 有权
公开(公告)号：US11728458B2
公开(公告)日：2023-08-15
申请号：US17461874
申请日：2021-08-30
申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
发明人： Hideto Sugawara
IPC分类号： H01L33/04 , H01L33/30
CPC分类号： H01L33/04 , H01L33/30
摘要： A semiconductor light-emitting device includes a semiconductor substrate and a light-emitting layer on the semiconductor substrate. The light-emitting layer includes at least one quantum well layer and barrier layers alternately stacked. The quantum well layer includes a first semiconductor mixed crystal having a larger lattice constant than a lattice constant of the semiconductor substrate. The barrier layers each includes a second semiconductor mixed crystal having a smaller lattice constant than the lattice constant of the semiconductor substrate. The quantum well layer includes a first strain amount that is a product of the layer thickness thereof and a first strain ratio. The barrier layer each includes a second strain amount that is a product of the layer thickness thereof and a second strain ratio. The quantum well layer and the barrier layers are provided such that the first strain amount is greater than the second strain amount.

13. 发明授权

US11688690B2 Semiconductor device comprising electron blocking layer 有权
公开(公告)号：US11688690B2
公开(公告)日：2023-06-27
申请号：US17354705
申请日：2021-06-22
申请人： EPISTAR CORPORATION
发明人： Yung-Chung Pan , Chang-Yu Tsai , Ching-Chung Hu , Ming-Pao Chen , Chi Shen , Wei-Chieh Lien
IPC分类号： H01L33/32 , H01L33/14 , H01L33/06 , H01L29/205 , H01L23/532 , H01L21/02 , H01L21/285 , H01L33/04 , H01L31/0304 , H01L33/30
CPC分类号： H01L23/53223 , H01L21/0254 , H01L21/02458 , H01L21/02579 , H01L21/28575 , H01L33/04 , H01L33/06 , H01L33/145 , H01L33/32 , H01L29/205 , H01L31/03042 , H01L31/03046 , H01L33/305 , H01L33/325
摘要： A semiconductor device includes: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region includes multiple alternating well layers and barrier layers, wherein each of the barrier layers has a band gap, the active region further includes an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region, wherein the electron blocking region includes a band gap, and the band gap of the electron blocking region is greater than the band gap of one of the barrier layers; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the electron blocking region; a confinement layer between the first aluminum-containing layer and the active region, wherein the confinement layer includes a thickness smaller than the thickness of one of the barrier layers; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies in the electron blocking region.

14. 发明公开

US20230187421A1 LIGHT EMITTING DEVICE ARRAY 审中-公开
公开(公告)号：US20230187421A1
公开(公告)日：2023-06-15
申请号：US17926505
申请日：2021-05-18
申请人： PLESSEY SEMICONDUCTORS LIMITED
发明人： Andrea Pinos , Samir Mezouari
IPC分类号： H01L25/075 , H01L33/32 , H01L33/62 , H01L33/44 , H01L33/04 , H01L33/00
CPC分类号： H01L25/0756 , H01L33/04 , H01L33/32 , H01L33/44 , H01L33/62 , H01L33/0075 , H01L2933/0025 , H01L2933/0066
摘要： A light emitting device array is provided. The light emitting device array comprises a light emitting stack, a first electrical contact layer, an array of second electrical contacts, and an anti-reflection layer. The light emitting stack has a light emitting surface and a contact surface. The light emitting surface and the contact surface define opposing sides of the light emitting stack. The light emitting stack comprises a plurality of Group III-nitride layers including a first semiconducting layer provided towards the light emitting surface of the light emitting stack, a second semiconducting layer provided towards the contact surface, and an active layer arranged between the first semiconducting layer and the second semiconducting layer, the active layer configured to generate light having a first wavelength. The light emitting surface and the contact surface are parallel to each other and aligned with the plurality of Group III-nitride layers. The first electrical contact layer is provided on the light emitting stack and is configured to be in electrical contact with the first semiconducting layer. The array of second electrical contacts is provided on the contact surface of the light emitting stack. Each second electrical contact defines a light emitting device between the first semiconducting layer and the second electrical contact. Each of the second electrical contacts is spaced apart from the other second electrical contacts to form a two-dimensional array of light emitting devices. The anti-reflection layer is provided on the light emitting surface. The anti-reflection layer is configured to increase a light extraction efficiency of the light generated by the light emitting stack.

15. 发明申请

US20230135600A1 LIGHT EMITTING ELEMENT, DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF FABRICATING THE DISPLAY DEVICE 有权
公开(公告)号：US20230135600A1
公开(公告)日：2023-05-04
申请号：US17841449
申请日：2022-06-15
申请人： Samsung Display Co., LTD.
发明人： Jin Taek PARK , Duk Sung KIM , Soo Chul KIM , Dae Ho SONG , Byeong Hwa CHOI , Jin Woo CHOI
IPC分类号： H01L33/38 , H01L33/42 , H01L33/04 , H01L33/50 , H01L33/00
摘要： A light emitting element, a display device including the same, and method of fabricating the display device are provided. The display device including a pixel electrode on a substrate, a light emitting element on the pixel electrode, and including a first semiconductor layer, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer, a connection electrode layer between the light emitting element and the pixel electrode, and directly contacting the pixel electrode, an insulating layer on the substrate and the pixel electrode, and surrounding the light emitting element, and a common electrode on the insulating layer directly contacting the second semiconductor layer of the light emitting element.

16. 发明申请

US20230013843A1 IMPACT IONIZATION LIGHT-EMITTING DIODES 有权
公开(公告)号：US20230013843A1
公开(公告)日：2023-01-19
申请号：US17932105
申请日：2022-09-14
申请人： Silanna UV Technologies Pte Ltd
发明人： Norbert Krause , Petar Atanackovic
IPC分类号： H01L33/00 , H01L33/14 , H01L33/04
摘要： Embodiments disclose LEDs that operate using impact ionization. Devices include a first conductivity type layer having a first conductivity type, a first intrinsic layer, a charge layer, an impact ionization layer, and a contact layer. The charge layer has a net charge of the first conductivity type and has a material comprising a polar oxide or a non-polar oxide. The charge layer forms a barrier for transporting carriers of the first conductivity type until a bias is applied between the first conductivity type layer and the contact layer to flatten the barrier.

17. 发明授权

US11522106B2 Nitride-based light-emitting diode device 有权
公开(公告)号：US11522106B2
公开(公告)日：2022-12-06
申请号：US16949639
申请日：2020-11-09
申请人： XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
发明人： Yung-Ling Lan , Chan-Chan Ling , Chi-Ming Tsai
IPC分类号： H01L33/32 , H01L33/04
摘要： A nitride-based light-emitting diode (LED) device includes an n-type nitride semiconductor layer, an active layer that is disposed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer disposed on the active layer, and a defect control unit disposed between the n-type nitride semiconductor layer and the active layer. The defect control unit includes first, second and third defect control layers that are sequentially disposed on the n-type nitride semiconductor layer in such order, and that have different doping concentrations. The third defect control layer includes one of Al-containing ternary nitride, Al-containing quaternary nitride, and a combination thereof.

18. 发明授权

US11411137B2 III-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers 有权
公开(公告)号：US11411137B2
公开(公告)日：2022-08-09
申请号：US16075949
申请日：2017-02-06
申请人： The Regents of the University of California
发明人： Asad J. Mughal , Stacy J. Kowsz , Robert M. Farrell , Benjamin P. Yonkee , Erin C. Young , Christopher D. Pynn , Tal Margalith , James S. Speck , Shuji Nakamura , Steven P. DenBaars
IPC分类号： H01L33/32 , H01L33/00 , H01L25/075 , H01L33/06 , H01L33/42 , H01L33/04
摘要： A III-nitride optoelectronic device includes at least one n-type layer, an active region grown on or above the n-type layer, at least one p-type layer grown on or above the active region, and a tunnel junction grown on or above the p-type layer. A conductive oxide may be wafer bonded on or above the tunnel junction, wherein the conductive oxide comprises a transparent conductor and may contain light extraction features on its non-bonded face. The tunnel junction also enables monolithic incorporation of electrically-injected and optically-pumped III-nitride layers, wherein the optically-pumped III-nitride layers comprise high-indium-content III-nitride layers formed as quantum wells (QWs) that are grown on or above the tunnel junction. The optically-pumped high-indium-content III-nitride layers emit light at a longer wavelength than the electrically-injected III-nitride layers.

19. 发明申请

US20220231191A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
公开(公告)号：US20220231191A1
公开(公告)日：2022-07-21
申请号：US17461874
申请日：2021-08-30
申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
发明人： Hideto SUGAWARA
IPC分类号： H01L33/04 , H01L33/30
摘要： A semiconductor light-emitting device includes a semiconductor substrate and a light-emitting layer on the semiconductor substrate. The light-emitting layer includes at least one quantum well layer and barrier layers alternately stacked. The quantum well layer includes a first semiconductor mixed crystal having a larger lattice constant than a lattice constant of the semiconductor substrate. The barrier layers each includes a second semiconductor mixed crystal having a smaller lattice constant than the lattice constant of the semiconductor substrate. The quantum well layer includes a first strain amount that is a product of the layer thickness thereof and a first strain ratio. The barrier layer each includes a second strain amount that is a product of the layer thickness thereof and a second strain ratio. The quantum well layer and the barrier layers are provided such that the first strain amount is greater than the second strain amount.

20. 发明授权

US11355667B2 Method for making semiconductor device including vertically integrated optical and electronic devices and comprising a superlattice 有权
公开(公告)号：US11355667B2
公开(公告)日：2022-06-07
申请号：US16380091
申请日：2019-04-10
申请人： ATOMERA INCORPORATED
发明人： Robert John Stephenson
IPC分类号： G02B6/12 , H01L27/12 , H01L29/15 , G02F1/017 , H01L33/06 , H01L23/522 , G02B6/134 , H01L27/15 , H01L33/00 , H01L33/34 , H01L33/58 , H01L21/02 , H01L31/0352 , H01L33/04
摘要： A method for making a semiconductor device may include forming a plurality of waveguides on a substrate, and forming a superlattice overlying the substrate and waveguides. The superlattice may include a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include forming an active device layer on the superlattice comprising at least one active semiconductor device.

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