专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US11129519B2 Single-use endoscope with built-in optical fibers and fixtures 有权
公开(公告)号：US11129519B2
公开(公告)日：2021-09-28
申请号：US15884344
申请日：2018-01-30
申请人： OTU Medical Inc.
发明人： XiBo Wei , GePing Liu , XiYi Wei
IPC分类号： A61B1/00 , A61B1/313 , A61N5/06
摘要： This present invention proposes new methods of designing single-use endoscopes with built-in optical fibers and operating fixtures. As compared to conventional endoscopes, a separate lumen is reserved for integrating a laser fiber along the insertion tube of the proposed endoscope, and an optical fiber placement device (OFPD) is correspondingly added in the endoscope handle for controlling the movement of the laser fiber. By sliding the slider or dialing the wheel of OFPD, a surgeon can conveniently control movement of the laser fiber. By pressing a retractable control stick in the OFPD, the surgeon can either push the laser fiber out from the endoscope's distal-end or pull back the laser fiber, further unlocking or locking the power switch of the laser fiber to avoid mis-operations. All these above operations can be performed by the surgeon's one-hand, including the routine deflections and rotations of the endoscope. Four implementations of the OFPD are introduced in this invention. In addition, an ultra-small optical fiber based pressure sensor can be added at the distal end of the endoscope upon applications.

22. 发明授权

US09960664B2 Voltage converter 有权
公开(公告)号：US09960664B2
公开(公告)日：2018-05-01
申请号：US15240787
申请日：2016-08-18
申请人： Alpha and Omega Semiconductor (Cayman) Ltd.
发明人： Tien-Chi Lin , Yu-Ming Chen , Jung-Pei Cheng , Yung-Chuan Hsu , Yueh-Ping Yu , Wei-Ting Wang , Pei-Lun Huang
IPC分类号： H02M3/335 , H02M1/08 , H02M1/40 , H02M1/00 , H02M1/36
CPC分类号： H02M1/08 , H02M1/36 , H02M1/40 , H02M3/33523 , H02M3/33592 , H02M2001/0006 , H02M2001/0009 , Y02B70/1475
摘要： A voltage converter comprises a second controller as a power switch of the secondary side of the transformer for comparing a detection voltage representing an output voltage and/or load current with a first reference voltage and generating a control signal, and a coupling element for transmitting the control signal generated by the second controller to the first controller on the primary side of the transformer enabling the first controller to generate a first pulse signal driving the power switch to control the on/off state of the primary side winding.

23. 发明授权

US09882500B2 Power supply device 有权
公开(公告)号：US09882500B2
公开(公告)日：2018-01-30
申请号：US15240921
申请日：2016-08-18
申请人： Alpha and Omega Semiconductor (Cayman) Ltd.
发明人： Tien-Chi Lin , Yu-Ming Chen , Jung-Pei Cheng , Yung-Chuan Hsu , Yueh-Ping Yu , Wei-Ting Wang , Pei-Lun Huang
IPC分类号： H02M3/335 , H02M1/08 , H02M1/40 , H02M1/36 , H02M1/00
CPC分类号： H02M3/33592 , H02M1/08 , H02M1/36 , H02M1/40 , H02M3/33523 , H02M2001/0006 , Y02B70/1475
摘要： The present invention relates to a power supply device for voltage converter, which includes a master switch, a first controller for generating a first pulse signal to drive the master switch to be turned on and turned off, a second controller for comparing a detection voltage representing an output voltage and/or load current with a first reference voltage to determine the logic state of a control signal generated by the second controller, and a coupling element connected between the first controller and the second controller for transmitting the logic state of the control signal to the first controller and enabling the first controller to determine the logic state of the first pulse signal according to the logic state of the control signal. The second controller includes a driving module for generating a second control signal to drive a synchronous switch to be turned on and turned off.

24. 发明授权

US09653383B2 Semiconductor device with thick bottom metal and preparation method thereof 有权
公开(公告)号：US09653383B2
公开(公告)日：2017-05-16
申请号：US14738271
申请日：2015-06-12
申请人： Alpha and Omega Semiconductor Incorporated
发明人： Hamza Yilmaz , Yan Xun Xue , Jun Lu , Ming-Chen Lu , Yan Huo , Aihua Lu
IPC分类号： H01L23/495 , H01L23/00 , H01L23/433 , H01L23/492 , H01L23/31 , H01L21/56 , H01L21/683
CPC分类号： H01L23/49503 , H01L21/561 , H01L21/566 , H01L21/6836 , H01L23/3121 , H01L23/3185 , H01L23/4334 , H01L23/492 , H01L23/49541 , H01L23/49568 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/97 , H01L2224/0401 , H01L2224/04026 , H01L2224/056 , H01L2224/05644 , H01L2224/1184 , H01L2224/1191 , H01L2224/13022 , H01L2224/13111 , H01L2224/13147 , H01L2224/2919 , H01L2224/32245 , H01L2224/73253 , H01L2224/94 , H01L2224/97 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/00 , H01L2924/014 , H01L2924/00014 , H01L2224/11 , H01L2224/83 , H01L2224/03
摘要： A semiconductor device with thick bottom metal comprises a semiconductor chip covered with a top plastic package layer at its front surface and a back metal layer at its back surface, the top plastic package layer surrounds sidewalls of the metal bumps with a top surface of the metal bumps exposing from the top plastic package layer, a die paddle for the semiconductor chip to mount thereon and a plastic package body.

25. 发明授权

US09577542B2 Constant on-time (COT) control in isolated converter 有权
公开(公告)号：US09577542B2
公开(公告)日：2017-02-21
申请号：US14562731
申请日：2014-12-07
申请人： Alpha and Omega Semiconductor (Cayman) Ltd.
发明人： Tien-Chi Lin , Chih-Yuan Liu , Yung-Chuan Hsu , Pei-Lun Huang
IPC分类号： H02M3/335 , H02M1/14
CPC分类号： H02M3/33592 , H02M1/14 , H02M3/33507 , H02M3/33576 , Y02B70/1475
摘要： The present invention discloses a constant on-time isolated converter comprising a transformer with a primary side and a secondary side. The primary side is connected to an electronic switch and secondary-side is connected to a load and a processor. The processor is connected to a driver on primary side through at least one coupling element and to the electronic switch. The processor receives an output voltage or an output current across the load generating a control signal accordingly. The driver receives the control signal through the coupling element and accordingly changes the ON/OFF state of the electronic switch, regulating the output voltage and the output current via the transformer, where the duration of the ON/OFF state of the electronic switch is determined between the moment control signal changes from negative to positive and the moment it changes from positive to negative to achieve a high-speed load transient response.

26. 发明授权

US09515570B2 Voltage detection circuit and a method of detecting voltage changes 有权
标题翻译：电压检测电路和检测电压变化的方法
公开(公告)号：US09515570B2
公开(公告)日：2016-12-06
申请号：US14671001
申请日：2015-03-27
申请人： Alpha and Omega Semiconductor (Cayman) Ltd.
发明人： Yu-Ming Chen , Chih-Yuan Liu , Pei-Lun Huang
IPC分类号： H02M7/217 , G01R19/22 , G01R19/15 , H02M1/42 , H02M1/32 , H02M7/04 , G01R19/155 , G01R19/145
CPC分类号： H02M7/217 , G01R15/16 , G01R19/145 , G01R19/15 , G01R19/155 , G01R19/16576 , G01R19/22 , H02M1/32 , H02M1/4225 , H02M7/04 , H02M7/06
摘要： A power conversion system and a method for voltage change detection, specifically, relates to a detection circuit implemented in the AC-DC power converter, detect the voltage change. The AC input voltage is rectified to convert into a DC input voltage transmitted to a detection unit generating a detection voltage signal at different logical states corresponding to the input voltage changes. A charge current source unit is used for charging the capacitor when the detection voltage signal is in a second state and a discharge current source unit is used for discharging the capacitor when the detection voltage signal is in a first state. A primary comparator compares the voltage changes of the capacitor in the alternating charge and discharge processes with a critical zero potential and outputs a detection signal identifying the changing trend of the input voltage.
摘要翻译：电力变换系统和电压变化检测方法具体涉及在AC-DC电力变换器中实现的检测电路，检测电压变化。交流输入电压被整流以转换成传输到检测单元的直流输入电压，其产生与输入电压变化相对应的不同逻辑状态的检测电压信号。当检测电压信号处于第二状态时，使用充电电流源单元对电容器充电，并且当检测电压信号处于第一状态时，使用放电电流源单元来放电电容器。主要比较器将交变的充电和放电过程中的电容器的电压变化与临界零电位进行比较，并输出识别输入电压变化趋势的检测信号。

27. 发明授权

US09461243B2 STT-MRAM and method of manufacturing the same 有权
标题翻译： STT-MRAM及其制造方法
公开(公告)号：US09461243B2
公开(公告)日：2016-10-04
申请号：US14147493
申请日：2014-01-03
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L43/02 , H01L43/12 , H01L21/033 , H01L21/64 , G11C11/16 , H01L43/08 , H01L27/22
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： A planar STT-MRAM comprises apparatus, a method of operating a spin-torque magnetoresistive memory and a plurality of magnetoresistive memory element having spin-transfer torques acting on a recording layer from a MTJ stack and a novel magnetoresistance with a spin-valve layer. The spin-valve layer is field-reversible between two stable magnetization states either parallel or anti-parallel to the fixed reference layer magnetization through a set/reset current pulse along a conductive line provided by a control circuitry, accordingly, the magnetoresistive element is pre-configured into a reading mode having canceled spin-transfer torques or a recording mode having additive spin-transfer torques.
摘要翻译：平面STT-MRAM包括装置，一种操作自旋转矩磁阻存储器的方法和具有从MTJ堆叠作用在记录层上的自旋转移转矩和具有自旋阀层的新型磁阻的多个磁阻存储元件。自旋阀层可以通过沿着由控制电路提供的导电线路的设定/复位电流脉冲平行或反平行于固定参考层磁化的两个稳定磁化状态之间是可以可逆的，因此磁阻元件是预先配置成具有取消的自旋转移转矩的读取模式或具有添加的自旋转移转矩的记录模式。

28. 发明授权

US09362490B1 Method of patterning MTJ cell without sidewall damage 有权
标题翻译： MTJ细胞无侧壁破坏的方法
公开(公告)号：US09362490B1
公开(公告)日：2016-06-07
申请号：US14794804
申请日：2015-07-09
申请人： Rongfu Xiao
发明人： Rongfu Xiao
IPC分类号： H01L43/12 , H01L43/02 , H01L43/08
CPC分类号： H01L43/12
摘要： A method of removing a damaged magnetic layer at the sidewall of MTJ edge is provided to form damage-free MRAM cell. In this method, the MTJ film stack outside the Ta hard mask protected area is first etched by high-power magnetic reactive ion etch (RIE) using methanol (CH3OH) or Co & NH3 as etchant gases. Then a very mild chemical vapor trimming (CVT) process is used to remove a damaged layer (by the high power RIE) from the MTJ sidewall followed by an in-situ edge passivation with Si nitride (SiN) layer formed by PECVD. The MRAM cell formed by such method will have higher magnetoresistance with good device performance and better reliability.
摘要翻译：提供了在MTJ边缘的侧壁处去除损坏的磁性层的方法，以形成无损MRAM电池。在该方法中，首先通过使用甲醇（CH 3 OH）或Co＆NH 3作为蚀刻剂气体的大功率磁反应离子蚀刻（RIE）蚀刻Ta硬掩模保护区外的MTJ膜堆叠。然后使用非常温和的化学气相修整（CVT）工艺从MTJ侧壁去除受损层（通过高功率RIE），随后通过由PECVD形成的Si氮化物（SiN）层进行原位边缘钝化。通过这种方法形成的MRAM单元将具有更高的磁阻，具有良好的器件性能和更好的可靠性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式