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1. 发明授权

US11569440B2 Making a memoristic array with an implanted hard mask 有权
公开(公告)号：US11569440B2
公开(公告)日：2023-01-31
申请号：US15412076
申请日：2017-01-23
申请人： Yimin Guo , Rongfu Xiao , Jun Chen
发明人： Yimin Guo , Rongfu Xiao , Jun Chen
IPC分类号： H01L43/12 , H01L27/24 , H01L45/00 , H01L27/22
摘要： The invention disclosed a method to make an implanted hard mask with ultra-small dimensions for fabricating integrated nonvolatile random access memory. Instead of directly depositing hard mask material on top of the memory film stack element, we first make ultra-small VIA holes on a pattern transfer molding (PTM) layer using a reverse memory mask, then fill in the hard mask material into the VIA holes within the PTM material. Ultra-small hard mask pillars are formed after removing the PTM material. To improve the adhesion of the hard mask pillars with the underneath memory stack element, a hard mask sustaining element (HMSE) is added below PTM. Due to a better materials adhesion between HMSE and the hard mask, a stronger hard mask array can be formed.

2. 发明申请

US20210343934A1 COMPOSITE MULTI-STACK SEED LAYER TO IMPROVE PMA FOR PERPENDICULAR MAGNETIC PINNING 有权
公开(公告)号：US20210343934A1
公开(公告)日：2021-11-04
申请号：US16865810
申请日：2020-05-04
申请人： Yimin Guo , Rongfu Xiao , Jun Chen
发明人： Yimin Guo , Rongfu Xiao , Jun Chen
IPC分类号： H01L43/10 , H01L43/08 , H01F10/30 , H01F10/32 , H01F10/12
摘要： The invention comprises a novel composite multi-stack seed layer (CMSL) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

3. 发明申请

US20210327960A1 BOTTOM-PINNED MAGNETIC RANDOM ACCESS MEMORY HAVING A COMPOSITE SOT STRUCTURE 有权
公开(公告)号：US20210327960A1
公开(公告)日：2021-10-21
申请号：US16849571
申请日：2020-04-15
申请人： RONGFU XIAO , Yimin Guo , Jun Chen
发明人： RONGFU XIAO , Yimin Guo , Jun Chen
IPC分类号： H01L27/22 , H01L43/08 , H01L43/12 , H01L43/02 , G11C11/16
摘要： An ultra-fast magnetic random access memory (MRAM) comprises a three terminal bottom-pinned composite SOT magnetic tunneling junction (bCSOT-MTJ) element including (counting from top to bottom) a magnetic flux guide (MFG) having a very high magnetic permeability, a spin Hall channel (SHC) having a large positive spin Hall angle, an in-plane magnetic memory (MM) layer, a tunnel barrier (TB) layer, and a magnetic pinning stack (MPS) having a synthetic antiparallel coupling pinned by an antiferromagnetic material. The magnetic writing is significantly boosted by a combined effort of enhanced spin orbit torque (SOT) and Lorentz force generated by current-flowing wire (CFW) in the SHC layer and spin transfer torque (STT) by a current flowing through the MTJ stack, and further enhanced by a magnetic close loop formed at the cross section of MFG/SHC/MM tri-layer. Such bCSOT-MTJ element will have a very fast (down to picoseconds) switching speed and consume much less power suitable level 1 or 2 cache application for SMRAM, CPU, GPU and TPU.

4. 发明授权

US11114611B2 Method to make MRAM with small footprint 有权
公开(公告)号：US11114611B2
公开(公告)日：2021-09-07
申请号：US14678370
申请日：2015-04-03
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L43/08 , H01L43/12 , H01L27/22
摘要： A method to make magnetic random access memory with small footprint using O-ion implantation to form electrically isolated memory pillar and electric (bottom and top) leads, which are made from some oxygen gettering materials, Mg, Zr, Y, Th, Ti, Al, Ba. The doped O-ions react with metal atoms to form fully oxidized metal oxide after high temperature anneal. The method only needs two photolithography patterning and oxygen implantations and no etch and dielectric refill are needed, thus significantly reduce process cost. The method can produce extremely small MRAM cell size with perfectly vertical pillar edges (FIG. 1).

5. 发明授权

US11081154B1 Synthetic magnetic pinning element having strong antiferromagnetic coupling 有权
公开(公告)号：US11081154B1
公开(公告)日：2021-08-03
申请号：US16773283
申请日：2020-01-27
申请人： Rongfu Xiao , Yimin Guo , Jun Chen
发明人： Rongfu Xiao , Yimin Guo , Jun Chen
IPC分类号： G11C11/16 , H01L27/22 , H01L43/10 , H01L43/08 , H01L43/02
摘要： The present invention discloses an enhanced synthetic antiferromagnetic (eSAF) element with a very strong RKKY coupling comprising a magnetic pinning layer having a face-center-cubic (fcc) crystalline structure and a magnetic reference layer having a body-center-cubic (bcc) crystalline structure which are antiferromagnetically coupled by a composite non-magnetic spacer (CnmS) containing a bi-layer of (Ru, Rh or Ir)/Cr or tri-layer of (Ru, Rh, or Ir)/(W, Mo, or V)/Cr. With such eSAF, a strong magnetic pinning element is formed which can be used to make various thin STT-MRAM film stacks with good thermal and magnetic stability while maintaining high TMR value.

6. 发明授权

US11038100B1 Magnetoresistive element having a perpendicular AFM structure 有权
公开(公告)号：US11038100B1
公开(公告)日：2021-06-15
申请号：US16695183
申请日：2019-11-26
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L43/10 , H01L43/02
摘要： A magnetoresistive element comprises a perpendicular coupling layer between a novel perpendicular AFM layer and ferromagnetic recording layer. The perpendicular coupling layer introduces giant magnetic anisotropy energies (P-MAE) on the recording layer interface and the P-AFM layer interface which further introduce RKKY coupling between the magnetic moment of the recording layer and the P-MAE induced magnetic moment at the P-AFM layer interface, yielding a giant perpendicular magnetic anisotropy of the recording layer.

7. 发明申请

US20160293835A1 METHOD TO MAKE MRAM WITH SMALL FOOTPRINT 审中-公开
标题翻译：制造MRAM与小FOOTPRINT的方法
公开(公告)号：US20160293835A1
公开(公告)日：2016-10-06
申请号：US14678370
申请日：2015-04-03
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L43/10 , H01L43/08 , H01L43/12 , H01L43/02
CPC分类号： H01L43/12 , H01L27/222 , H01L43/08
摘要： A method to make magnetic random access memory with small footprint using O-ion implantation to form electrically isolated memory pillar and electric (bottom and top) leads, which are made from some oxygen gettering materials, Mg, Zr, Y, Th, Ti, Al, Ba. The doped O-ions react with metal atoms to form fully oxidized metal oxide after high temperature anneal. The method only needs two photolithography patterning and oxygen implantations and no etch and dielectric refill are needed, thus significantly reduce process cost. The method can produce extremely small MRAM cell size with perfectly vertical pillar edges (FIG. 1).
摘要翻译：使用O离子注入制造具有小占地面积的磁性随机存取存储器的方法，以形成电绝缘存储柱和电（底和顶）引线，其由一些吸氧材料制成，Mg，Zr，Y，Th，Ti， Al，Ba。掺杂的O离子与金属原子反应，在高温退火后形成完全氧化的金属氧化物。该方法仅需要两个光刻图案和氧气注入，并且不需要蚀刻和电介质填充，因此显着降低了工艺成本。该方法可以产生具有完全垂直柱边缘的极小的MRAM单元尺寸（图1）。

8. 发明授权

US09461243B2 STT-MRAM and method of manufacturing the same 有权
标题翻译： STT-MRAM及其制造方法
公开(公告)号：US09461243B2
公开(公告)日：2016-10-04
申请号：US14147493
申请日：2014-01-03
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L43/02 , H01L43/12 , H01L21/033 , H01L21/64 , G11C11/16 , H01L43/08 , H01L27/22
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： A planar STT-MRAM comprises apparatus, a method of operating a spin-torque magnetoresistive memory and a plurality of magnetoresistive memory element having spin-transfer torques acting on a recording layer from a MTJ stack and a novel magnetoresistance with a spin-valve layer. The spin-valve layer is field-reversible between two stable magnetization states either parallel or anti-parallel to the fixed reference layer magnetization through a set/reset current pulse along a conductive line provided by a control circuitry, accordingly, the magnetoresistive element is pre-configured into a reading mode having canceled spin-transfer torques or a recording mode having additive spin-transfer torques.
摘要翻译：平面STT-MRAM包括装置，一种操作自旋转矩磁阻存储器的方法和具有从MTJ堆叠作用在记录层上的自旋转移转矩和具有自旋阀层的新型磁阻的多个磁阻存储元件。自旋阀层可以通过沿着由控制电路提供的导电线路的设定/复位电流脉冲平行或反平行于固定参考层磁化的两个稳定磁化状态之间是可以可逆的，因此磁阻元件是预先配置成具有取消的自旋转移转矩的读取模式或具有添加的自旋转移转矩的记录模式。

9. 发明申请

US20160260890A1 NOVEL PERPENDICULAR MAGNETORESISTIVE ELEMENTS 审中-公开
标题翻译：新颖的电磁元件
公开(公告)号：US20160260890A1
公开(公告)日：2016-09-08
申请号：US14641380
申请日：2015-03-07
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L43/08 , H01L43/10 , H01L27/22 , H01L43/02
CPC分类号： H01L43/08 , H01L43/10 , H01L43/12
摘要： A perpendicular magnetoresistive element comprises a novel buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the tunnel barrier layer is provided, wherein at least the portion of the buffer layer interfacing to the recording layer contains a rocksalt crystal structure having the (100) plane parallel to the substrate plane and at least a portion of the buffer layer comprises a doped element having conductivity enhancement and the perpendicular resistance of the buffer layer is relatively small than that of the tunnel barrier layer. The invention preferably includes materials, configurations and processes of perpendicular magnetoresistive elements suitable for perpendicular spin-transfer torque MRAM applications
摘要翻译：垂直磁阻元件包括设置在记录层表面上的新型缓冲层，其与设置有隧道势垒层的记录层的表面相对，其中至少缓冲层与记录层相接的部分包含具有平行于衬底平面的（100）平面的岩盐晶体结构，并且缓冲层的至少一部分包括具有导电性增强的掺杂元素，并且缓冲层的垂直电阻相对于隧道势垒层的垂直电阻。本发明优选地包括适用于垂直旋转传递转矩MRAM应用的垂直磁阻元件的材料，配置和工艺

10. 发明申请

US20160072054A1 METHOD TO MAKE MRAM WITH SMALL CELL SIZE 审中-公开
标题翻译：制造具有小细胞尺寸的MRAM的方法
公开(公告)号：US20160072054A1
公开(公告)日：2016-03-10
申请号：US14479353
申请日：2014-09-07
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L43/12 , H01L43/08 , H01L43/10 , H01L43/02
CPC分类号： H01L43/12 , H01L27/228
摘要： A method to make magnetic random access memory with extremely small cell size is provided. Using atomic layer deposition (ALD) technique, a very thin film of hard mask material is uniformly grown on the vertical spatial walls of a pre-form. Stand alone hard mask is formed after removing the pre-form. Array of magnetic memory cells are formed by reactive ion etch (RIE) or ion milling using such small hard mask. This way, the dimension of the hard mask is no longer limited by photolithography tool capability, instead, it is controlled by ALD-grown hard mask film thickness which can be made extremely thin.
摘要翻译：提供了一种制造具有极小单元尺寸的磁随机存取存储器的方法。使用原子层沉积（ALD）技术，将非常薄的硬掩模材料均匀地生长在预成型件的垂直空间壁上。在取下预制件后，形成独立的硬面罩。通过使用这种小的硬掩模的反应离子蚀刻（RIE）或离子研磨形成磁存储单元的阵列。这样，硬掩模的尺寸不再受光刻工具的能力限制，而是由ALD生长的硬掩模膜厚度控制，这可以使其非常薄。

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