专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US06586777B1 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US06586777B1
公开(公告)日：2003-07-01
申请号：US09641876
申请日：2000-08-18
申请人： Takayuki Yuasa , Atsushi Ogawa , Masahiro Araki , Yoshihiro Ueta , Yuhzoh Tsuda , Mototaka Taneya
发明人： Takayuki Yuasa , Atsushi Ogawa , Masahiro Araki , Yoshihiro Ueta , Yuhzoh Tsuda , Mototaka Taneya
IPC分类号： H01L3300
CPC分类号： H01L33/325 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/32 , H01S5/0213 , H01S5/0218 , H01S5/305 , H01S5/34333 , H01S2304/00
摘要： The present nitride semiconductor light emitting device includes a nitride semiconductor thick film substrate and a light emitting layered structure including a plurality of nitride semiconductor layers stacked on the substrate. The nitride semiconductor substrate includes at least two layer regions including a first layer region of a high impurity concentration and a second layer region of an impurity concentration lower than the first layer region. The light emitting layered structure is formed on the first layer region of the substrate.
摘要翻译：本发明的氮化物半导体发光器件包括氮化物半导体厚膜衬底和包括堆叠在衬底上的多个氮化物半导体层的发光层状结构。氮化物半导体衬底包括至少两层包括高杂质浓度的第一层区域和杂质浓度低于第一层区域的第二层区域的层区域。发光层状结构形成在基板的第一层区域上。

22. 发明授权

US08350609B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08350609B2
公开(公告)日：2013-01-08
申请号：US13369063
申请日：2012-02-08
申请人： Masahiro Araki , Atsuhiko Ishibashi
发明人： Masahiro Araki , Atsuhiko Ishibashi
IPC分类号： H03K5/12
CPC分类号： G11C7/1057 , G11C13/0002
摘要： The present invention provides a semiconductor device in which an adjustable range of a resistance value of a variable resistance circuit is large. The semiconductor device has an output buffer including a plurality of sets of resistance elements and a plurality of sets of transistors, a plurality of replica circuits, and a plurality of sets of operational amplifiers, and drain currents of the plurality of sets of transistors are adjusted so that output impedances of the output buffer become predetermined values. Therefore, even in the case where the resistance values of the resistance elements largely fluctuate due to fluctuations in manufacture process and the like, the output impedances can be set to predetermined values.
摘要翻译：本发明提供一种半导体器件，其中可变电阻电路的电阻值的可调范围大。半导体器件具有包括多组电阻元件和多组晶体管，多个复制电路和多组运算放大器的输出缓冲器，并且调节多组晶体管的漏极电流使得输出缓冲器的输出阻抗变为预定值。因此，即使在电阻元件的电阻值由于制造工艺等的波动而大幅波动的情况下，也可以将输出阻抗设定为规定值。

23. 发明申请

US20120292642A1 FUNCTIONAL ELEMENT AND MANUFACTURING METHOD OF SAME 有权
标题翻译：功能元件及其制造方法
公开(公告)号：US20120292642A1
公开(公告)日：2012-11-22
申请号：US13522883
申请日：2011-01-18
申请人： Akihiro Urata , Masahiro Araki , Takaaki Utsumi , Masahiro Shiota
发明人： Akihiro Urata , Masahiro Araki , Takaaki Utsumi , Masahiro Shiota
IPC分类号： H01L29/02 , H01L29/161 , H01L21/78 , H01L29/20
CPC分类号： H01L29/7786 , H01L29/045 , H01L29/2003 , H01L33/0095
摘要： Provided is a functional element which is obtained by forming a lamination film on a substrate and then dividing the substrate and the lamination film into a desired shape. The functional element has a hexagonal substrate, a lamination film formed on a C surface of the substrate, and a plurality of divided surfaces which are exposed by dividing the substrate into quadrilaterals. At least one line of division lines in the case of dividing the substrate into quadrilaterals is perpendicular to any one of equivalent directions of [1-100], [-1010], and [01-01] of the substrate from a [0001] direction of the substrate, and the divided surfaces formed by the division lines are inclined in a direction of other divided surfaces to which at least a part thereof is opposed.
摘要翻译：提供了通过在基板上形成层压膜然后将基板和层压膜分成所需形状而获得的功能元件。功能元件具有六边形基板，形成在基板的C表面上的层压膜，以及通过将基板分割成四边形而暴露的多个分割表面。在将衬底分成四边形的情况下，至少一条划分线垂直于[0001]衬底的[1-100]，[-1010]和[01-01]的任何一个方向，并且由分割线形成的分割面在其至少一部分相对的其他分割面的方向上倾斜。

24. 发明授权

US07352012B2 Nitride compound semiconductor light emitting device and method for producing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US07352012B2
公开(公告)日：2008-04-01
申请号：US11409101
申请日：2006-04-20
申请人： Yoshihiro Ueta , Takayuki Yuasa , Atsushi Ogawa , Yuhzoh Tsuda , Masahiro Araki
发明人： Yoshihiro Ueta , Takayuki Yuasa , Atsushi Ogawa , Yuhzoh Tsuda , Masahiro Araki
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/16 , H01S5/0207 , H01S5/2201 , H01S5/3054 , H01S5/3202 , H01S5/32341 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A nitride compound semiconductor light emitting device includes: a GaN substrate having a crystal orientation which is tilted away from a direction by an angle which is equal to or greater than about 0.05° and which is equal to or less than about 2°, and a semiconductor multilayer structure formed on the GaN substrate, wherein the semiconductor multilayer structure includes: an acceptor doping layer containing a nitride compound semiconductor; and an active layer including a light emitting region.
摘要翻译：一种氮化物化合物半导体发光器件包括：具有晶体取向的GaN衬底，其倾斜远离<0001>方向等于或大于约0.05°并且等于或小于约2° 以及形成在所述GaN衬底上的半导体多层结构，其中所述半导体多层结构包括：含有氮化物半导体的受主掺杂层; 以及包括发光区域的有源层。

25. 发明申请

US20060189012A1 Nitride compound semiconductor light emitting device and method for producing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20060189012A1
公开(公告)日：2006-08-24
申请号：US11409101
申请日：2006-04-20
申请人： Yoshihiro Ueta , Takayuki Yuasa , Atsushi Ogawa , Yuhzoh Tsuda , Masahiro Araki
发明人： Yoshihiro Ueta , Takayuki Yuasa , Atsushi Ogawa , Yuhzoh Tsuda , Masahiro Araki
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/16 , H01S5/0207 , H01S5/2201 , H01S5/3054 , H01S5/3202 , H01S5/32341 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A nitride compound semiconductor light emitting device includes: a GaN substrate having a crystal orientation which is tilted away from a direction by an angle which is equal to or greater than about 0.05° and which is equal to or less than about 2°, and a semiconductor multilayer structure formed on the GaN substrate, wherein the semiconductor multilayer structure includes an acceptor doping layer containing a nitride compound semiconductor; and an active layer including a light emitting region.
摘要翻译：一种氮化物化合物半导体发光器件包括：具有晶体取向的GaN衬底，其倾斜远离<0001>方向等于或大于约0.05°并且等于或小于约2° 以及形成在所述GaN衬底上的半导体层叠结构，其中所述半导体多层结构包括含有氮化物半导体的受主掺杂层; 以及包括发光区域的有源层。

26. 发明授权

US07064357B2 Nitride compound semiconductor light emitting device and method for producing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US07064357B2
公开(公告)日：2006-06-20
申请号：US09759312
申请日：2001-01-12
申请人： Yoshihiro Ueta , Takayuki Yuasa , Atsushi Ogawa , Yuhzoh Tsuda , Masahiro Araki
发明人： Yoshihiro Ueta , Takayuki Yuasa , Atsushi Ogawa , Yuhzoh Tsuda , Masahiro Araki
IPC分类号： H01L31/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/16 , H01S5/0207 , H01S5/2201 , H01S5/3054 , H01S5/3202 , H01S5/32341 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A nitride compound semiconductor light emitting device includes: a GaN substrate having a crystal orientation which is tilted away from a direction by an angle which is equal to or greater than about 0.05° and which is equal to or less than about 2°, and a semiconductor multilayer structure formed on the GaN substrate, wherein the semiconductor multilayer structure includes: an acceptor doping layer containing a nitride compound semiconductor; and an active layer including a light emitting region.
摘要翻译：一种氮化物化合物半导体发光器件包括：具有晶体取向的GaN衬底，其倾斜远离<0001>方向等于或大于约0.05°并且等于或小于约2° 以及形成在所述GaN衬底上的半导体多层结构，其中所述半导体多层结构包括：含有氮化物半导体的受主掺杂层; 以及包括发光区域的有源层。

27. 发明授权

US07012283B2 Nitride semiconductor light emitting element and optical device containing it 失效
标题翻译：氮化物半导体发光元件和含有它的光学装置
公开(公告)号：US07012283B2
公开(公告)日：2006-03-14
申请号：US10381113
申请日：2001-09-17
申请人： Yuhzoh Tsuda , Shigetoshi Ito , Masahiro Araki
发明人： Yuhzoh Tsuda , Shigetoshi Ito , Masahiro Araki
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/02 , H01L33/32 , H01S5/2009 , H01S5/305 , H01S5/34333 , H01S5/34346
摘要： According to an aspect of the present invention, a nitride semiconductor light emitting device includes a light emitting layer (106) having a quantum well structure with quantum well layers and barrier layers laminated alternately. The well layer is formed of a nitride semiconductor containing In, and the barrier layer is formed of a nitride semiconductor layer containing As, P or Sb. According to another aspect of the present invention, a nitride semiconductor light emitting device includes a light emitting layer having a quantum well structure with quantum well layers and barrier layers laminated alternately. The well layer is formed of GaN1−x−y−zAsxPySbz (0
摘要翻译：根据本发明的一个方面，氮化物半导体发光器件包括具有量子阱结构的发光层（106），其量子阱层和势垒层交替层叠。阱层由包含In的氮化物半导体形成，并且阻挡层由含有As，P或Sb的氮化物半导体层形成。根据本发明的另一方面，氮化物半导体发光器件包括具有量子阱结构的发光层，其量子阱层和阻挡层交替层叠。阱层由GaN 1-xyz（0

28. 发明授权

US08963165B2 Nitride semiconductor structure, nitride semiconductor light emitting element, nitride semiconductor transistor element, method of manufacturing nitride semiconductor structure, and method of manufacturing nitride semiconductor element 有权
标题翻译：氮化物半导体结构，氮化物半导体发光元件，氮化物半导体晶体管元件，氮化物半导体结构的制造方法以及氮化物半导体元件的制造方法
公开(公告)号：US08963165B2
公开(公告)日：2015-02-24
申请号：US13977456
申请日：2011-12-21
申请人： Masahiro Araki , Shinya Yoshida , Haruhisa Takiguchi , Atsushi Ogawa , Takao Kinoshita , Tohru Murata , Takeshi Funaki , Masayuki Hoteida
发明人： Masahiro Araki , Shinya Yoshida , Haruhisa Takiguchi , Atsushi Ogawa , Takao Kinoshita , Tohru Murata , Takeshi Funaki , Masayuki Hoteida
IPC分类号： H01L33/00 , H01L29/20 , H01L21/02 , H01L33/12 , H01L29/812
CPC分类号： H01L29/2003 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L29/812 , H01L33/007 , H01L33/12 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A nitride semiconductor structure in which a first nitride semiconductor underlying layer is provided on a substrate having a recess portion and a projection portion provided between the recess portions at a surface thereof, the first nitride semiconductor underlying layer has at least 6 first oblique facet planes surrounding the projection portion on an outer side of the projection portion, and a second nitride semiconductor underlying layer buries the first oblique facet planes, a nitride semiconductor light emitting element, a nitride semiconductor transistor element, a method of manufacturing a nitride semiconductor structure, and a method of manufacturing a nitride semiconductor element are provided.
摘要翻译：一种氮化物半导体结构，其中在具有凹部的基板上设置有第一氮化物半导体下层，在其表面设置有位于所述凹部之间的突出部，所述第一氮化物半导体下层具有至少6个第一倾斜面平面，突出部分的外侧的突出部分和第二氮化物半导体下层掩埋第一倾斜面面，氮化物半导体发光元件，氮化物半导体晶体管元件，氮化物半导体结构的制造方法和提供了制造氮化物半导体元件的方法。

29. 发明授权

US08647904B2 Method for manufacturing nitride semiconductor device, nitride semiconductor light-emitting device, and light-emitting apparatus 有权
标题翻译：氮化物半导体装置的制造方法，氮化物半导体发光装置以及发光装置
公开(公告)号：US08647904B2
公开(公告)日：2014-02-11
申请号：US13580330
申请日：2011-02-23
申请人： Masahiro Araki , Takaaki Utsumi , Masahiko Sakata
发明人： Masahiro Araki , Takaaki Utsumi , Masahiko Sakata
IPC分类号： H01L21/00
CPC分类号： H01L21/02631 , H01L21/0237 , H01L21/02488 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/12 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： Provided is a method for manufacturing a nitride semiconductor device, including the steps of: forming an AlNO buffer layer containing at least aluminum, nitrogen, and oxygen on a substrate; and forming a nitride semiconductor layer on the AlNO buffer layer, wherein, in the step of forming the AlNO buffer layer, the AlNO buffer layer is formed by a reactive sputtering method using aluminum as a target in an atmosphere to and from which nitrogen gas and oxygen gas are continuously introduced and exhausted, and the atmosphere is an atmosphere in which a ratio of a flow rate of the oxygen gas to a sum of a flow rate of the nitrogen gas and the flow rate of the oxygen gas is not more than 0.5%.
摘要翻译：提供一种用于制造氮化物半导体器件的方法，包括以下步骤：在衬底上形成至少含有铝，氮和氧的AlNO缓冲层; 以及在所述AlNO缓冲层上形成氮化物半导体层，其中，在形成所述AlNO缓冲层的步骤中，所述AlNO缓冲层是通过在大气中使用铝作为靶的反应性溅射法形成的，氧气连续引入并排出，气氛是氧气流量与氮气流量与氧气流量之和的比率不大于0.5的气氛％。

30. 发明授权

US06714060B2 Master slave flip-flop circuit functioning as edge trigger flip-flop 失效
标题翻译：主从触发器电路用作边沿触发器
公开(公告)号：US06714060B2
公开(公告)日：2004-03-30
申请号：US10358157
申请日：2003-02-05
申请人： Masahiro Araki
发明人： Masahiro Araki
IPC分类号： H03K3289
CPC分类号： H03K3/35625 , H03K3/356121
摘要： In a master latch circuit, input data signal is received in a data through state and is held in a data holding state as output data signal. In a slave latch circuit, the output data signal is received in a data through state and is held and output in a data holding state. In a circuit setting control unit, in response to a clock signal, the disconnection of a first line from a power source and the connection of a second line to a ground terminal in an NMOS transistor are performed to set the master latch circuit and the slave latch circuit to the data through state and the data holding state respectively, and the connection of the first line and the disconnection of the second line are performed to change the states of the latch circuits.
摘要翻译：在主锁存电路中，输入数据信号在数据通过状态下被接收并保持在数据保持状态作为输出数据信号。在从锁存电路中，输出数据信号以数据通过状态接收并保持并输出为数据保持状态。在电路设置控制单元中，响应于时钟信号，执行第一线路与电源的断开以及NMOS晶体管中的第二线路与接地端子的连接，以设置主锁存电路和从机锁存电路分别与数据通过状态和数据保持状态进行，并且执行第一行的连接和第二行的断开以改变锁存电路的状态。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式