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1. 发明公开

US20240186765A1 METHOD FOR MANUFACTURING A LIGHT EMITTING SEMICONDUCTOR CHIP AND LIGHT EMITTING SEMICONDUCTOR CHIP 审中-公开
公开(公告)号：US20240186765A1
公开(公告)日：2024-06-06
申请号：US18553434
申请日：2022-04-13
申请人： ams-OSRAM International GmbH
发明人： Sven Gerhard , Lars Nähle
IPC分类号： H01S5/10 , H01S5/02 , H01S5/20 , H01S5/323
CPC分类号： H01S5/1082 , H01S5/0207 , H01S5/1057 , H01S5/106 , H01S5/2086 , H01S5/32341
摘要： In an embodiment a method for manufacturing a light-emitting semiconductor chip includes providing a substrate having a main surface with at least one recess, the main surface having a main extension plane along the longitudinal direction and along a transversal direction perpendicular to the longitudinal direction, wherein the substrate has pre-patterning trenches formed along the transversal direction between chip regions and extending along the longitudinal direction, growing the semiconductor layer sequence on the main surface with the at least one recess and forming at least one facet aligned along the transversal direction in the semiconductor layer sequence by an etching process, wherein the facet has a distance of less than or equal to 50 μm from the at least one recess in at least one direction parallel to the main extension plane of the main surface.

2. 发明公开

US20240120436A1 LASER DIODES, LEDS, AND SILICON INTEGRATED SENSORS ON PATTERNED SUBSTRATES 审中-公开
公开(公告)号：US20240120436A1
公开(公告)日：2024-04-11
申请号：US18201874
申请日：2023-05-25
申请人： Jie Piao
发明人： Jie Piao
IPC分类号： H01L33/00 , H01L21/02 , H01L31/18 , H01L33/02 , H01L33/20 , H01S5/02 , H01S5/24 , H01S5/343
CPC分类号： H01L33/0075 , H01L21/02381 , H01L21/02458 , H01L21/02494 , H01L21/02505 , H01L21/0254 , H01L21/02587 , H01L31/1812 , H01L33/0054 , H01L33/02 , H01L33/20 , H01S5/0206 , H01S5/0207 , H01S5/24 , H01S5/34333 , H01L25/167
摘要： The present disclosure falls into the field of optoelectronics, particularly, includes the design, epitaxial growth, fabrication, and characterization of Laser Diodes (LDs) operating in the ultraviolet (UV) to infrared (IR) spectral regime on patterned substrates (PSs) made with (formed on) low cost, large size Si, or GaN on sapphire, GaN, and other wafers. We disclose three types of PSs, which can be universal substrates, allowing any materials (III-Vs, II-VIs, etc.) grown on top of it with low defect and/or dislocation density.

3. 发明公开

US20240022040A1 SURFACE EMITTING LASER AND SURFACE EMITTING LASER ARRAY 审中-公开
公开(公告)号：US20240022040A1
公开(公告)日：2024-01-18
申请号：US18249550
申请日：2021-10-20
申请人： SONY GROUP CORPORATION
发明人： RINTARO KODA , YASUTAKA HIGA , GO HIRANO , SHUHEI YAMAGUCHI , TATSUYA MATOU , HIDEKI WATANABE
IPC分类号： H01S5/02 , H01S5/42 , H01S5/183
CPC分类号： H01S5/0207 , H01S5/423 , H01S5/18305
摘要： A surface emitting laser according to one embodiment of the present disclosure includes: a substrate having a convex part provided on a surface thereof; and a vertical resonator structure formed on the substrate, and including an active layer, a first semiconductor layer, and a current blocking layer. The first semiconductor layer is a semiconductor layer of a first conductivity type having a step structure part having a shape conforming to the convex part at a location facing the convex part. The current blocking layer is a semiconductor layer of a second conductivity type different from the first conductivity type and having an opening in which an inner peripheral surface is in contact with an outer peripheral surface of the step structure part.

4. 发明公开

US20240006840A1 LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
公开(公告)号：US20240006840A1
公开(公告)日：2024-01-04
申请号：US18252580
申请日：2021-10-29
申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人： Hideaki MOGI , Masashi NAKAMURA , Jun IWASHITA , Hiroshi KATO
IPC分类号： H01S5/02253 , H01S5/02 , H01S5/183
CPC分类号： H01S5/02253 , H01S5/0202 , H01S5/18305 , H01S5/0207 , H01S5/0261
摘要： Provided are a light emitting device capable of providing lenses or light emitting elements on a substrate in a suitable manner, and a method for manufacturing the light emitting device. A light emitting device of the present disclosure includes: a first substrate; a light emitting element provided on a lower surface of the first substrate; a lens provided on an upper surface of the first substrate; a first protrusion provided on the upper surface of the first substrate; and a first film provided on the upper surface of the first substrate, the first film including a first portion disposed on the lens or forming the lens, and a second portion disposed on the first protrusion or forming the first protrusion, in which a height of an uppermost portion of the first portion is equal to or less than a height of an uppermost portion of the second portion.

5. 发明授权

US11695250B2 Thermally tunable laser and method for fabricating such laser 有权
公开(公告)号：US11695250B2
公开(公告)日：2023-07-04
申请号：US17076173
申请日：2020-10-21
申请人： Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
发明人： Martin Möhrle , Moon-Hyeok Lee
IPC分类号： H01S5/024 , H01S5/02 , H01S5/06 , H01S5/0625 , H01S5/12 , H01S5/125
CPC分类号： H01S5/02469 , H01S5/0207 , H01S5/02461 , H01S5/02476 , H01S5/0612 , H01S5/06255 , H01S5/06256 , H01S5/125 , H01S5/1209 , H01S5/1218
摘要： A thermally tunable laser includes: a substrate; a laser resonator, wherein the laser resonator includes a gain section, and wherein the laser resonator includes a tuning section; a heating arrangement; a heat sink arrangement for dissipating a heat flow from the laser resonator to the heat sink arrangement; and a hole arrangement for influencing the heat flow from the laser resonator to the heat sink arrangement, wherein the hole arrangement is arranged between the substrate and the heat sink arrangement, wherein one or more holes of the hole arrangement include at least one hole being arranged within a horizontal range of the tuning section, so that a thermal resistance between the tuning section and the heat sink arrangement is increased.

6. 发明申请

US20180205199A1 OPTICAL APPARATUS, MANUFACTURING METHOD OF DISTRIBUTED BRAGG REFLECTOR LASER DIODE AND MANUFACTURING METHOD OF OPTICAL APPARATUS 审中-公开
公开(公告)号：US20180205199A1
公开(公告)日：2018-07-19
申请号：US15702262
申请日：2017-09-12
申请人： Electronics and Telecommunications Research Institute
发明人： Oh Kee KWON , Su Hwan OH , Chul-Wook LEE , Kisoo KIM
IPC分类号： H01S5/125 , H01S5/024 , H01S5/026 , H01S5/042 , H01S5/06 , H01S5/065 , H01S5/12
CPC分类号： H01S5/125 , H01S5/0207 , H01S5/02415 , H01S5/02453 , H01S5/02461 , H01S5/02469 , H01S5/026 , H01S5/0425 , H01S5/0612 , H01S5/06256 , H01S5/0651 , H01S5/1234
摘要： Provided are an optical apparatus, a manufacturing method of a distributed Bragg reflector laser diode, and a manufacturing method of the optical apparatus, the an optical apparatus including a cooling device, a distributed Bragg reflector laser diode having a lower clad including a recess region on one side of the cooling device and connected to another side of the cooling device, and an air gap between the cooling device and the distributed Bragg reflector laser diode, wherein the air gap is defined by a bottom surface of the lower clad in the recess region and a top surface of the cooling device

7. 发明授权

US09972970B2 Thermal emission source and two-dimensional photonic crystal for use in the same emission source 有权
公开(公告)号：US09972970B2
公开(公告)日：2018-05-15
申请号：US15120254
申请日：2015-02-24
申请人： JAPAN SCIENCE AND TECHNOLOGY AGENCY
发明人： Susumu Noda , Takuya Inoue , Takashi Asano , Menaka De Zoysa
IPC分类号： H01S3/04 , H01S3/097 , H01S5/183 , H01S5/02 , H01S5/024 , H01S5/10 , H01S5/34 , H01S5/00 , H01S5/042 , H01S5/30
CPC分类号： H01S5/18319 , H01S5/0014 , H01S5/0207 , H01S5/02453 , H01S5/02461 , H01S5/0421 , H01S5/0422 , H01S5/0425 , H01S5/0428 , H01S5/105 , H01S5/18316 , H01S5/3086 , H01S5/309 , H01S5/3402 , H01S5/3419 , H01S2302/02
摘要： A thermal emission source capable of switching the intensity of light at a high response speed similarly to a photoelectric conversion element. A thermal emission source includes: a two-dimensional photonic crystal including a slab in which an n-layer made of an n-type semiconductor, a quantum well structure layer having a quantum well structure, and a p-layer made of a p-type semiconductor are stacked in the mentioned order in the thickness direction, wherein modified refractive index areas (air holes) whose refractive index differs from the refractive indices of the n-layer, the p-layer and the quantum well structure layer are cyclically arranged in the slab so as to resonate with a specific wavelength of light corresponding to a transition energy between the subbands in a quantum well in the quantum well structure layer; and a p-type electrode and an n-type electrode for applying, to the slab, a voltage which is negative on the side of the p-layer and positive on the side of the n-layer.

8. 发明授权

US09735539B2 VCSEL structure with embedded heat sink 有权
公开(公告)号：US09735539B2
公开(公告)日：2017-08-15
申请号：US15011562
申请日：2016-01-31
申请人： APPLE INC.
发明人： Tongbi T. Jiang , Weiping Li , Xiaofeng Fan
IPC分类号： H01S5/024 , H01S5/183 , H01S5/42 , H01S5/042
CPC分类号： H01S5/02469 , H01S5/0207 , H01S5/026 , H01S5/0425 , H01S5/183 , H01S5/423
摘要： An optoelectronic device includes a semiconductor substrate, having front and back sides and having at least one cavity extending from the back side through the semiconductor substrate into proximity with the front side. At least one optoelectronic emitter is formed on the front side of the semiconductor substrate in proximity with the at least one cavity. A heat-conducting material at least partially fills the at least one cavity and is configured to serve as a heat sink for the at least one optoelectronic emitter.

9. 发明申请

US20170025815A1 VCSEL STRUCTURE WITH EMBEDDED HEAT SINK 有权
标题翻译： VCSEL结构与嵌入式散热器
公开(公告)号：US20170025815A1
公开(公告)日：2017-01-26
申请号：US15011562
申请日：2016-01-31
申请人： APPLE INC.
发明人： Tongbi T. Jiang , Weiping Li , Xiaofeng Fan
IPC分类号： H01S5/024 , H01S5/42 , H01S5/042 , H01S5/183
CPC分类号： H01S5/02469 , H01S5/0207 , H01S5/026 , H01S5/0425 , H01S5/183 , H01S5/423
摘要： An optoelectronic device includes a semiconductor substrate, having front and back sides and having at least one cavity extending from the back side through the semiconductor substrate into proximity with the front side. At least one optoelectronic emitter is formed on the front side of the semiconductor substrate in proximity with the at least one cavity. A heat-conducting material at least partially fills the at least one cavity and is configured to serve as a heat sink for the at least one optoelectronic emitter.
摘要翻译：光电子器件包括半导体衬底，其具有正面和背面，并且具有至少一个从背面穿过半导体衬底延伸到与前侧接近的腔。至少一个光电子发射器形成在半导体衬底的与该至少一个腔相邻的正面上。导热材料至少部分地填充至少一个空腔，并被配置为用作至少一个光电发射器的散热器。

10. 发明授权

US09276381B2 Quantum cascade laser 有权
标题翻译：量子级联激光器
公开(公告)号：US09276381B2
公开(公告)日：2016-03-01
申请号：US14520500
申请日：2014-10-22
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Atsushi Sugiyama , Tadataka Edamura , Naota Akikusa
IPC分类号： H01S5/34 , H01S5/028 , H01S5/02 , H01S5/22
CPC分类号： H01S5/3401 , H01S5/0207 , H01S5/028 , H01S5/0281 , H01S5/0285 , H01S5/0286 , H01S5/0287 , H01S5/22 , H01S5/34
摘要： A quantum cascade laser includes a semiconductor substrate, and an active layer being provided on the substrate, and having a cascade structure in which quantum well emission layers and injection layers are alternately laminated, and the laser has a base portion including the substrate, and a stripe-shaped ridge portion including the active layer. Further, a reflection control film is formed from a ridge end face over a base end face on an end face in a resonating direction of the laser, and, on the base end face, for a second side and a third side adjacent to a first side on the ridge portion side of the base end face, and a fourth side facing the first side, the reflection control film is formed on a region other than regions near those three sides with predetermined widths.
摘要翻译：量子级联激光器包括半导体衬底，并且有源层设置在衬底上，并且具有量子阱发射层和注入层交替层叠的级联结构，并且激光器具有包括衬底的基部，以及包括活性层的条纹状脊部。此外，在激光的共振方向的端面上的基端面上的脊端面形成反射控制膜，并且在基端面上，与第一侧面相邻的第二侧面和第三侧面在基端面的脊部侧的侧面以及面向第一侧的第四面，反射控制膜形成在除了三边以外的区域以外的区域上，具有预定的宽度。

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