专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20160039678A1 METHODS FOR SYNTHESIS OF GRAPHENE DERIVATIVES AND FUNCTIONAL MATERIALS FROM ASPHALTENES 审中-公开
标题翻译：合成苯甲酸衍生物和功能材料的方法
公开(公告)号：US20160039678A1
公开(公告)日：2016-02-11
申请号：US14822822
申请日：2015-08-10
申请人： Olanrewaju W. Tanimola
发明人： Olanrewaju W. Tanimola
IPC分类号： C01B31/04 , C01B31/02 , C01D5/00 , C07C211/00 , C07C205/06 , C07C309/30
CPC分类号： C01B32/168 , C01B32/152 , C01B32/194 , C30B7/06 , C30B7/14 , C30B29/02 , C30B29/60
摘要： Embodiments described are directed to methods for the functionalization of asphaltene materials and to compositions made from functionalized asphaltenes. Disclosed is a method for synthesizing graphene derivatives, such as 2D single crystalline carbon allotropes of graphene and functional materials, such as sulfonic acid and its derivatives. Also disclosed is a method for the transformation of asphaltene into a source of graphene derivatives and functional materials, such as, 0D, 1D, 2D and combinations of 0D and 1D by utilizing chemical substitution reaction mechanism, such as, electrophilic aromatic substitution, nucleophilic aromatic substitution and Sandmeyer mechanism. Also disclosed are novel graphene materials comprising: acetylenic linkage and hydrogenated graphene. These novel materials, which may be produced by these methods, include, e.g.: 2D single crystalline carbon allotropes of graphene with asymmetric unit formulas C7H6N2O4, C6H4N2O4, C7H7O3S− H3O+, C7H7O3SH+, and a 2D single crystal with asymmetric unit formula (Na6O16S4)n.
摘要翻译：所描述的实施方案涉及沥青质材料的官能化方法和由官能化沥青质制成的组合物。公开了石墨烯衍生物的合成方法，例如石墨烯的2D单晶碳同素异形体和功能性材料如磺酸及其衍生物。还公开了通过利用化学取代反应机理，如亲电芳族取代，亲核芳族化合物，将沥青质转化为石墨烯衍生物和功能材料源，例如0D，1D，2D和0D和1D的组合的方法替代和Sandmeyer机制。还公开了新颖的石墨烯材料，包括：炔键和氢化石墨烯。可以通过这些方法制备的这些新型材料包括例如：具有不对称单元式C7H6N2O4，C6H4N2O4，C7H7O3S-H3O +，C7H7O3SH +的石墨烯的二维单晶碳同素异形体和具有不对称单元配方（Na6O16S4）n的2D单晶。

22. 发明申请

US20150361584A1 ROLLED COPPER FOIL FOR PRODUCING TWO-DIMENSIONAL HEXAGONAL LATTICE COMPOUND AND METHOD OF PRODUCING TWO-DIMENSIONAL HEXAGONAL LATTICE COMPOUND 有权
标题翻译：用于生产二维十六烷基化合物的卷绕铜箔及其生产二维六方晶系化合物的方法
公开(公告)号：US20150361584A1
公开(公告)日：2015-12-17
申请号：US14738076
申请日：2015-06-12
申请人： JX Nippon Mining & Metals Corporation
发明人： Yoshihiro Chiba
IPC分类号： C30B25/18 , C22C9/00 , C30B29/02
CPC分类号： C22C9/00 , B32B15/01 , C22F1/08 , C30B25/18 , C30B29/02 , Y10T428/12431
摘要： A rolled copper foil for producing a two-dimensional hexagonal lattice compound, including P: 0.01 to 0.21 wt %, Fe: 0.006 wt % or less, and the balance being Cu and inevitable impurities, and having the following relationship: 2.0
摘要翻译：一种用于制造二维六方晶格化合物的轧制铜箔，包括P：0.01至0.21重量％，Fe：0.006重量％或更少，余量为Cu和不可避免的杂质，并具有以下关系：2.0 <=（ I / I0）其中I是在1000℃下加热30分钟后通过轧制表面的X射线衍射测定的（111）衍射强度，I0是通过X射线衍射测定的（111）衍射强度粉铜。

23. 发明授权

US09206527B2 Carbon thin film, mold for molding optical element, and method for manufacturing optical element 有权
标题翻译：碳薄膜，用于模制光学元件的模具和用于制造光学元件的方法
公开(公告)号：US09206527B2
公开(公告)日：2015-12-08
申请号：US13859246
申请日：2013-04-09
申请人： NIKON CORPORATION
发明人： Koichiro Iwahori
IPC分类号： C23C14/06 , C30B29/02 , B29C33/56 , C03B11/08 , C23C14/46 , C01B31/02 , B29L11/00
CPC分类号： C30B29/02 , B29C33/56 , B29K2907/04 , B29L2011/00 , C01B32/05 , C03B11/086 , C03B2215/24 , C03B2215/31 , C23C14/0605 , C23C14/46 , Y10T428/2495 , Y10T428/30
摘要： A ta-C thin film (1A) is formed by laminating a first unit structure (11) and a second unit structure (12) in this order on a base material (10). The first unit structure (11) has mutually different amounts of sp3 bonding in a first layer (11a) and a second layer (11b), and has mutually different amounts of sp3 bonding in the second layer (11b) and a third layer (11c). The second unit structure (12) has mutually different amounts of sp3 bonding in a first layer (12a) and a second layer (12b), and has mutually different amounts of sp3 bonding in the second layer (12b) and a third layer (12c).
摘要翻译：通过将第一单元结构（11）和第二单元结构（12）依次层叠在基材（10）上而形成ta-C薄膜（1A）。第一单元结构（11）在第一层（11a）和第二层（11b）中具有相互不同量的sp 3键合，并且在第二层（11b）和第三层（11c）中具有相互不同量的sp 3键合）。第二单元结构（12）在第一层（12a）和第二层（12b）中具有相互不同量的sp 3键合，并且在第二层（12b）和第三层（12c）中具有相互不同量的sp 3键合）。

24. 发明授权

US09206509B2 Method for the controlled growth of a graphene film 有权
标题翻译：石墨烯薄膜受控生长的方法
公开(公告)号：US09206509B2
公开(公告)日：2015-12-08
申请号：US13124413
申请日：2009-10-16
申请人： Laurent Baraton , Costel Sorin Cojocaru , Didier Pribat
发明人： Laurent Baraton , Costel Sorin Cojocaru , Didier Pribat
IPC分类号： B05D5/12 , B05D3/10 , B05D3/06 , B05D3/02 , C23C14/48 , C23C14/58 , B32B38/10 , C23C16/26 , C23C16/02 , C23C16/56 , C30B25/02 , C30B29/02
CPC分类号： C23C16/26 , C23C16/0281 , C23C16/56 , C30B25/02 , C30B29/02
摘要： The invention includes a controlled graphene film growth process including the production on the surface of a substrate of a layer of a metal having with carbon a phase diagram such that, above a molar concentration threshold ratio CM/CM+CC, where CM is the molar metal concentration in a metal/carbon mixture and CC is the molar carbon concentration in the mixture, a homogeneous solid solution is obtained. The metal layer is exposed to a controlled flux of carbon atoms or carbon-containing radicals or carbon-containing ions at a temperature such that the molar concentration ratio obtained is greater than the threshold ratio to obtain a solid solution of carbon in the metal. The process further includes an operation for modifying the phase of the mixture into two phases, a metal phase and a graphite phase, leading to the formation of at least a lower graphene film at the metal layer incorporating carbon atoms-substrate interface and an upper graphene film at the surface of the metal layer.
摘要翻译：本发明包括受控的石墨烯薄膜生长工艺，其包括在具有碳的金属层的基底的表面上生产相图，使得高于摩尔浓度阈值比CM / CM + CC，其中CM是摩尔金属/碳混合物中的金属浓度，CC是混合物中的摩尔碳浓度，得到均匀的固溶体。在使得所得到的摩尔浓度比大于阈值比以获得金属中的固溶体的温度的温度下，将金属层暴露于受控的碳原子或含碳自由基或含碳离子的流量。该方法还包括将混合物相变成两相的操作，金属相和石墨相，导致在包含碳原子 - 基底界面的金属层和上部石墨烯上形成至少一个下部石墨烯膜膜在金属层的表面。

25. 发明申请

US20150284852A1 Micron-sized single curved crystals of metals 审中-公开
标题翻译：微米尺寸的金属弯曲晶体
公开(公告)号：US20150284852A1
公开(公告)日：2015-10-08
申请号：US14675829
申请日：2015-04-01
申请人： Technion Research & Development Foundation Limited
发明人： Boaz Pokroy , Maria Koifman Khristosov
IPC分类号： C23C16/56 , C23F1/14 , C23C16/06
CPC分类号： C23C14/18 , C23C14/5806 , C23C14/5873 , C23F1/00 , C23F1/40 , C30B21/00 , C30B29/02 , C30B29/60 , C30B33/02 , Y10T428/12014 , Y10T428/25
摘要： The present invention relates to metal micron-sized single crystals having a controlled curvature, which can be either fully or partially nanoporous; and to a process for growing of such single crystals from the confined volume of droplets of a eutectic composition melt comprising said metal as one of the two eutectic components, with no need of any fabrication steps.
摘要翻译：本发明涉及具有受控曲率的金属微米尺寸单晶，其可以是完全或部分纳米孔; 以及从包含作为两个共晶组分之一的所述金属的共熔组合物熔体的约束体积的液滴生长这种单晶的方法，而不需要任何制造步骤。

26. 发明授权

US09109270B2 Methods for production of silver nanostructures 有权
标题翻译：银纳米结构生产方法
公开(公告)号：US09109270B2
公开(公告)日：2015-08-18
申请号：US13367217
申请日：2012-02-06
申请人： Younan Xia , Sang-Hyuk Im , Yugang Sun , Yun Tack Lee , Benjamin Wiley
发明人： Younan Xia , Sang-Hyuk Im , Yugang Sun , Yun Tack Lee , Benjamin Wiley
IPC分类号： B22F9/24 , C22C5/06 , B22F1/00 , B82Y30/00 , C22C5/02 , C30B7/00 , C30B29/02 , C30B29/60
CPC分类号： B22F9/24 , B22F1/0025 , B22F2001/0037 , B22F2009/245 , B22F2301/255 , B22F2304/05 , B22F2998/10 , B82Y30/00 , B82Y40/00 , C22B11/04 , C22C5/02 , C22C5/06 , C30B7/00 , C30B29/02 , C30B29/60
摘要： Methods for producing silver nanostructures with improved dimensional control, yield, purity, monodispersity, and scale of synthesis.
摘要翻译：具有改进的尺寸控制，产率，纯度，单分散性和合成规模的银纳米结构的制备方法。

27. 发明申请

US20150207022A1 System for the production of single crystal semiconductors and solar panels using the single crystal semiconductors 审中-公开
标题翻译：使用单晶半导体生产单晶半导体和太阳能电池板的系统
公开(公告)号：US20150207022A1
公开(公告)日：2015-07-23
申请号：US14633654
申请日：2015-02-27
申请人： Grain Free Products, Inc.
发明人： Fritz Juergen Wisotzki
IPC分类号： H01L31/18 , C30B33/08 , C30B23/02 , H01L31/0392 , C30B29/08 , C30B29/48 , H01L31/0445 , C30B19/12 , C30B29/02
CPC分类号： H01L31/1836 , C30B19/12 , C30B23/025 , C30B29/02 , C30B29/08 , C30B29/48 , C30B33/08 , H01L31/0368 , H01L31/03925 , H01L31/03926 , H01L31/1804 , H01L31/1808 , H01L31/1892 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： A process and the required technical arrangement has been developed to produce single crystal solar panels or otherwise used semiconductors, which starts with the raw material to produce single crystal copper ribbons, extruded directly from the melt, with unharmed and optical surfaces onto which in the next unit a silicon or germanium film will be deposited. In the next unit the copper ribbon will be removed from the silicon film, whilst a hard plastic support or ceramic support is mounted, leaving copper contours on the silicon film to be used as electrical conductors or contacts. In the next unit a thin film is deposited of II-VI compounds that enhance the infrared sensitivity of the base film of silicon or germanium up to 56% of the incoming light. This technology guarantees the lowest possible cost in production of the highest possible efficiency of materials for infrared applications and electronic applications.
摘要翻译：已经开发了一种工艺和所需的技术方案，以生产单晶太阳能电池板或其他用途的半导体，这些半导体开始于原材料，以生产直接从熔体中直接挤出的单晶铜带，其中未受损伤和光学表面在下一个单位硅或锗膜将被沉积。在下一个单元中，铜带将从硅膜中移除，同时安装硬质塑料支架或陶瓷支架，留下硅膜上的铜轮廓作为电导体或触点使用。在下一个单元中，沉积II-VI化合物的薄膜，其增强硅或锗的基膜的红外灵敏度高达入射光的56％。该技术保证了在生产用于红外应用和电子应用的材料中尽可能高的效率的最低可能成本。

28. 发明授权

US09080255B2 Method of producing silver nanowires in large quantities 有权
标题翻译：大量生产银纳米线的方法
公开(公告)号：US09080255B2
公开(公告)日：2015-07-14
申请号：US13435983
申请日：2012-03-30
申请人： Cheng Yang , Matthew Ming Fai Yuen
发明人： Cheng Yang , Matthew Ming Fai Yuen
IPC分类号： B22F9/24 , C22C5/06 , C30B29/60 , B82Y30/00 , B82Y40/00 , C30B7/02 , C30B29/02
CPC分类号： C30B29/60 , B22F9/24 , B22F2998/00 , B22F2999/00 , B82Y30/00 , B82Y40/00 , C30B7/02 , C30B29/02 , B22F1/0022 , B22F1/0025 , B22F2301/255
摘要： Monodispersed silver nanowires are formed by a process utilizing a polyol. A capping agent is mixed in the polyol to form a substantially homogeneous solution. The solution is heated to a level below a boiling point of the polyol. The solution is diluted with a diluent which may consist of water and/or alcohol, and the solution is centrifuged to produce the silver nanowires.
摘要翻译：单分散银纳米线通过利用多元醇的方法形成。在多元醇中混合封端剂以形成基本均匀的溶液。将溶液加热到低于多元醇沸点的水平。溶液用可以由水和/或醇组成的稀释剂稀释，并将溶液离心以产生银纳米线。

29. 发明申请

US20150084074A1 GALLIUM NITRIDE MATERIAL AND DEVICE DEPOSITION ON GRAPHENE TERMINATED WAFER AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：石墨终止膜上的氮化钛材料和器件沉积及其形成方法
公开(公告)号：US20150084074A1
公开(公告)日：2015-03-26
申请号：US14060133
申请日：2013-10-22
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Can Bayram , Christos D. Dimitrakopoulos , Keith E. Fogel , Jeehwan Kim , John A. Ott , Devendra K. Sadana
IPC分类号： H01L33/32 , H01L33/00
CPC分类号： C30B25/18 , C30B25/183 , C30B29/02 , C30B29/406 , H01L21/0254 , H01L29/1606 , H01L33/0025 , H01L33/0079 , H01L33/12 , H01L33/32
摘要： A method of forming an epitaxial semiconductor material that includes forming a graphene layer on a semiconductor and carbon containing substrate and depositing a metal containing monolayer on the graphene layer. An epitaxial layer of a gallium containing material is formed on the metal containing monolayer. A layered stack of the metal containing monolayer and the epitaxial layer of gallium containing material is cleaved from the graphene layer that is present on the semiconductor and carbon containing substrate.
摘要翻译：一种形成外延半导体材料的方法，其包括在半导体和含碳衬底上形成石墨烯层并在所述石墨烯层上沉积含金属的单层。在含金属单层上形成含镓材料的外延层。含有金属的单层的层叠堆叠和含镓材料的外延层从存在于半导体和含碳衬底上的石墨烯层切割。

30. 发明申请

US20150013593A1 THIN FILM FORMATION 审中-公开
标题翻译：薄膜形成
公开(公告)号：US20150013593A1
公开(公告)日：2015-01-15
申请号：US14377173
申请日：2013-02-04
申请人： Universiteit Leiden
发明人： Guocai Dong
IPC分类号： C30B25/16 , C30B29/02 , H01L21/02
CPC分类号： C30B25/16 , B82Y30/00 , B82Y40/00 , C01B32/186 , C23C16/26 , C30B29/02 , H01L21/02425 , H01L21/02433 , H01L21/02527 , H01L21/0262
摘要： A method of forming a graphene film on a surface (20) of a substrate comprises the steps of: (i) locating a carbon source (22) at, or in a vicinity of the surface (20) of the substrate; (ii) controlling ambient conditions at the surface (20) of the substrate to inhibit graphene nucleation on the surface (20); (iii) applying a temporary change of one or more of the ambient conditions at a localised site (30) on the surface (20) of the substrate to initiate graphene nucleation at the localised site (30); (iv) controlling the ambient conditions at the surface (20) of the substrate, following initiation of graphene nucleation at the localised site, to simultaneously inhibit graphene nucleation and enable graphene growth on the surface (20).
摘要翻译：在衬底的表面（20）上形成石墨烯膜的方法包括以下步骤：（i）将碳源（22）定位在衬底的表面（20）附近或附近; （ii）控制所述衬底的表面（20）处的环境条件以抑制所述表面（20）上的石墨烯成核; （iii）在衬底的表面（20）上的局部位置（30）处施加一个或多个环境条件的暂时变化，以在所述局部位置（30）处引发石墨烯成核; （iv）在局部位置开始石墨烯成核之后，控制衬底表面（20）处的环境条件，同时抑制石墨烯成核并使表面上的石墨烯生长（20）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式