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1. 发明授权

US11618955B2 Hydrogen evolution apparatus 有权
公开(公告)号：US11618955B2
公开(公告)日：2023-04-04
申请号：US17038527
申请日：2020-12-21
申请人： RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
发明人： Hyungkoun Cho , Youngbeen Kim
IPC分类号： C25B9/65 , C25B1/55 , C25B9/17 , C25B11/052 , C25B11/061 , C25B11/091 , C23C14/24 , C23C14/16 , C23C14/58 , C23C14/06 , C25B1/04 , C25B9/50 , C25B11/087 , C25D5/50 , C23C28/00 , C01B19/00
摘要： The present disclosure relates to a hydrogen evolution apparatus including an AC power source, a semiconductor electrode and a counter electrode connected to the AC power source, an electrolyte in which the semiconductor electrode is immersed, and a light source which irradiates light on the semiconductor electrode, in which the semiconductor electrode includes a conductive substrate and n-type semiconductor particles dispersed on a p-type semiconductor matrix or p-type semiconductor particles dispersed on an n-type semiconductor matrix which is vertically grown from the conductive substrate.

2. 发明授权

US11613806B2 Method for preparing ammonium thiomolybdate-porous amorphous carbon composite superlubricity film 有权
公开(公告)号：US11613806B2
公开(公告)日：2023-03-28
申请号：US17375030
申请日：2021-07-14
申请人： Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences
发明人： Bin Zhang , Qian Jia , Junyan Zhang , Yuanlie Yu , Kaixiong Gao , Xingkai Zhang
IPC分类号： C23C14/35 , C23C14/00 , C23C14/02 , C23C14/06 , C23C14/16 , C23C14/34 , C23C14/58
摘要： A method for preparing an ammonium thiomolybdate-porous amorphous carbon composite superlubricity film is disclosed. First, a porous amorphous carbon film is prepared by an anode layer ion source assisted plasma chemical vapor deposition method and a reactive magnetron sputtering method on a substrate. The porous amorphous carbon film is then impregnated in an ammonium thiomolybdate solution, so that the ammonium thiomolybdate is adsorbed on the porous amorphous carbon film, and the impregnated porous amorphous carbon film is air dried. During the friction process, the composited porous amorphous carbon superlubricity film prepared in the present disclosure promotes the in-situ decomposition of ammonium thiomolybdate to generate molybdenum disulfide by utilizing the friction heat at the initial stage of running-in, further to generate a graphene-like structure under the function of a catalyst, thus realizing a macroscopic super lubricity through a heterogeneous incommensurate contact between graphene and molybdenum disulfide.

3. 发明申请

US20230093665A1 ANALYTE SENSORS AND METHODS FOR FABRICATING ANALYTE SENSORS 有权
公开(公告)号：US20230093665A1
公开(公告)日：2023-03-23
申请号：US17986766
申请日：2022-11-14
申请人： MEDTRONIC MINIMED, INC.
发明人： Santhisagar Vaddiraju , Dennis Slomski
IPC分类号： C23C14/20 , G01N27/327 , C23C14/34 , B41M1/06 , C23C14/58 , B41M1/12 , B41M1/10 , A61B5/145 , B23K26/36 , B41M5/00 , G01N27/411 , A61B5/1486
摘要： Analyte sensors and methods for fabricating analyte sensors in a roll-to-roll process are provided. In an exemplary embodiment, a method includes providing a roll of a polyester substrate having a first side coated with a layer of platinum, wherein the platinum is in direct contact with the polyester substrate; patterning the layer of platinum to form electrodes; punching the polyester substrate to form ribbons, wherein each ribbon is connected to a remaining polyester substrate web by a tab, and wherein each sensor includes an electrode; after punching the polyester substrate to form ribbons, depositing an enzyme layer over the portions of the working electrodes and coating the working electrodes with a glucose limiting membrane; after depositing the enzyme layer over the portions of the working electrodes and coating the working electrodes with a glucose limiting membrane, singulating the individual sensors by completely separating each individual sensor from the polyester substrate.

4. 发明授权

US11600490B2 Silicon film forming method and substrate processing apparatus 有权
公开(公告)号：US11600490B2
公开(公告)日：2023-03-07
申请号：US17111867
申请日：2020-12-04
申请人： TOKYO ELECTRON LIMITED
发明人： Mitsuhiro Okada , Tatsuya Miyahara , Keisuke Fujita
IPC分类号： H01L21/00 , C23C14/14 , H01L21/02 , C23C14/58 , H01L21/3065 , C23C14/54
摘要： There is provided a method of forming a silicon film, which includes: a film forming step of forming the silicon film on a base, the silicon film having a film thickness thicker than a desired film thickness; and an etching step of reducing the film thickness of the silicon film by supplying an etching gas containing bromine or iodine to the silicon film.

5. 发明授权

US11577544B2 External element or timepiece dial made of non-conductive material 有权
公开(公告)号：US11577544B2
公开(公告)日：2023-02-14
申请号：US16464850
申请日：2017-12-14
申请人： Rubattel & Weyermann S.A.
发明人： Mehdy Larriere , Benjamin Tixier
IPC分类号： B44C1/22 , G04B19/12 , G04B37/22 , G04D3/00 , C23C14/04 , G04B45/00 , C23C14/02 , C23C14/14 , C23C14/58 , C23C28/02 , C23C28/00 , C03C17/34 , C23F1/00 , C03C15/00 , C03C17/36
摘要： A method for fabricating an external element or a timepiece dial from non-conductive material, by performing or repeating a basic cycle of making a base from a non-conductive, or ceramic, or glass. or sapphire substrate; dry coating the base with a first sacrificial protective metal layer; etching a decoration with an ultrashort pulse laser to a depth at least equal to the local thickness of the first layer; dry coating the decoration and the remaining part of the first layer with a second metal and/or coloured decorative treatment layer; chemically removing each first layer; and before or after chemical removal of each first layer, mechanically levelling on the upper level of the base the compound thus formed.

6. 发明申请

US20230037960A1 FILM FORMING METHOD, FILM FORMING DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20230037960A1
公开(公告)日：2023-02-09
申请号：US17758819
申请日：2020-11-30
申请人： Tokyo Electron Limited
发明人： Seokhyoung HONG , Tsuyoshi TAKAHASHI , Taichi MONDEN
IPC分类号： H01L21/285 , H01L21/321 , H01L21/768 , C23C16/34 , C23C16/455 , C23C16/06 , C23C14/06 , C23C14/18 , C23C16/56 , C23C14/58
摘要： A film forming method includes: providing the substrate into the processing container; forming a metal-based film on the substrate within the processing container; and subsequently, supplying a Si-containing gas into the processing container in a state in which the substrate is provided within the processing container.

7. 发明申请

US20230034675A1 ELECTROCHROMIC DEVICE AND MANUFACTURING METHOD 有权
公开(公告)号：US20230034675A1
公开(公告)日：2023-02-02
申请号：US17787419
申请日：2020-12-28
申请人： SHENZHEN GUANGYI TECH CO., LTD.
发明人： Kun WANG
IPC分类号： G02F1/153 , C23C14/04 , C23C14/58 , B23K26/364
摘要： The electrochromic device includes a first transparent substrate, a first transparent conductive layer, an ion storage layer, an ion transfer layer, an electrochromic layer, a second transparent conductive layer, and a second transparent substrate which are sequentially stacked, where the first transparent conductive layer includes at least two first conductive portions, the second transparent conductive layer includes at least two second conductive portions, and an extension direction of the at least two first conductive portions and an extension direction of the at least two second conductive portions are configured to intersect with each other.

8. 发明申请

US20230033516A1 COATED CUTTING TOOL 有权
公开(公告)号：US20230033516A1
公开(公告)日：2023-02-02
申请号：US17785594
申请日：2020-12-17
申请人： WALTER AG
发明人： Wolfgang ENGELHART , Veit SCHIER , Sven MAJCHRZAK
IPC分类号： C23C28/00 , C23C14/02 , C23C14/06 , C23C14/32 , C23C14/00 , C23C14/58 , C23C14/35 , B23B27/14 , C23C30/00 , C23C28/04
摘要： A coated cutting tool and a process for the production thereof id provided. The coated cutting tool consists of a substrate body of WC-Co based cemented carbide and a coating, the coating including a first (Ti,Al)N multilayer, a first gamma-aluminium oxide layer, and a set of alternating second (Ti,Al)N multilayers and second gamma-aluminium oxide layers.

9. 发明申请

US20230032284A1 FILM STACK COMPOSITION, RELATED METHOD, AND APPLICATIONS 有权
公开(公告)号：US20230032284A1
公开(公告)日：2023-02-02
申请号：US17863700
申请日：2022-07-13
申请人： VERGASON TECHNOLOGY, INC.
发明人： Joshua B. Soper , Gregory A. Pilgrim
IPC分类号： C23C14/14 , C23C14/54 , C23C14/58
摘要： A multi-layer PVD film stack contains high index of refraction base material(s), followed by a semi-transparent low index of refraction cap layer. The base layer(s) provide the color range of the film. The thickness of the cap layer dictates the degree to which the film retains the color properties of the base material and the reflectivity of the cap material. The cap layer not only increases the reflectivity of the base material, but it also decreases the reflectivity lost when the PVD film is topcoat lacquered. The lacquering is advantageous in protecting the PVD film but it decreases the reflectivity of the high index of refraction materials (generally n value>1.9 at 632 nm). These materials are desirable due to their color properties but are too dark after lacquering for many commercial applications. We address this problem by utilizing a high refractive index metal, or metals, as an opaque first layer followed by a thin semi-transparent second layer of a low refractive index metal. Upon topcoat lacquering, the resulting coating retains most of the aesthetically pleasing properties of the base metal(s) but minimizes the darkening of the metal(s) after topcoat due to the low refractive index of the second layer, which is in contact with the lacquer.

10. 发明授权

US11566317B2 Ion beam sputtering with ion assisted deposition for coatings on chamber components 有权
公开(公告)号：US11566317B2
公开(公告)日：2023-01-31
申请号：US15711885
申请日：2017-09-21
申请人： Applied Materials, Inc.
发明人： Jennifer Y. Sun , Vahid Firouzdor , Biraja Prasad Kanungo , Tom K. Cho , Vedapuram S. Achutharaman , Ying Zhang
IPC分类号： C04B41/89 , C04B41/00 , C04B41/52 , C04B35/505 , C04B35/622 , C04B41/45 , C04B35/00 , C23C14/08 , C04B41/50 , C23C14/46 , C23C14/58 , H01J37/32 , C04B41/87
摘要： An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide is selected from a group consisting of YF3, Er4Al2O9, ErAlO3, and a ceramic compound comprising Y4Al2O9 and a solid-solution of Y2O3—ZrO2.

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