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    • 26. 发明授权
    • Low power one-pin crystal oscillator with fast start-up
    • US10432201B2
    • 2019-10-01
    • US15695493
    • 2017-09-05
    • ARM LTD
    • Alexandru Aurelian Ciubotaru
    • H03B5/06H03B5/36H03L3/00H03L5/02H03B5/32
    • An oscillator circuit topology using a one-pin external resonator suitable for integrated-circuit low-voltage, low-power applications that require a fast-starting accurate clock is disclosed. The circuit incorporates a novel arrangement of a plurality of active transconductance cells that respond to a digital control and provide adjustable loop gain for the oscillator. A programmable number of start-up transconductance cells are engaged in the initial phase of the oscillation for temporarily increasing the loop gain and energizing the resonator, and are disengaged from the oscillator core once the oscillation level is sufficiently large. The start-up transconductance cells may be identical to the always-on transconductance cells in the oscillator core, or they may be scaled versions of those cells. In addition, a programmable number of identical or scaled transconductance cells may be provided in the oscillator core itself, for accommodating different resonators. Internal circuit implementations of the transconductance cells that enable their efficient combination for increasing the oscillator loop gain are also disclosed.
    • 28. 发明授权
    • Plasma processing apparatus, plasma processing method and high frequency generator
    • 等离子体处理装置,等离子体处理方法和高频发生器
    • US09418822B2
    • 2016-08-16
    • US14177421
    • 2014-02-11
    • Tokyo Electron Limited
    • Kazushi KanekoNaoki MatsumotoKoji KoyamaKazunori FunazakiHideo KatoKiyotaka Ishibashi
    • H01J37/32H05H1/46H03L5/02
    • H01J37/32935H01J37/32192H03L5/02H05H1/46H05H2001/463H05H2001/4682
    • A plasma processing apparatus includes a plasma generating device configured to generate a plasma within a processing vessel by using a high frequency wave generated by a microwave generator 41 including a magnetron 42 configured to generate the high frequency wave; detectors 54a and 54b configured to measure a power of a traveling wave that propagates to a load side and a power of a reflected wave reflected from the load side, respectively; and a voltage control circuit 53a configured to control a voltage supplied to the magnetron 42 by a power supply 43. Further, the voltage control circuit 53a includes a load control device configured to supply, to the magnetron 42, a voltage corresponding to a power calculated by adding a power calculated based on the power of the reflected wave measured by the detector 54b to the power of the traveling wave measured by the detector 54a.
    • 等离子体处理装置包括:等离子体产生装置,其被配置为通过使用由包括被配置为产生高频波的磁控管42的微波发生器41产生的高频波在处理容器内产生等离子体; 被配置为分别测量传播到负载侧的行波的功率和从负载侧反射的反射波的功率的检测器54a和54b; 以及电压控制电路53a,其被配置为通过电源43控制提供给磁控管42的电压。此外,电压控制电路53a包括负载控制装置,其被配置为向磁控管42提供与计算出的功率相对应的电压 通过将由检测器54b测量的反射波的功率计算出的功率与由检测器54a测量的行波的功率相加。