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    • 39. 发明授权
    • X-ray semiconductor detector
    • X射线半导体探测器
    • US06323490B1
    • 2001-11-27
    • US09271981
    • 1999-03-19
    • Mitsushi IkedaManabu TanakaMasaki AtsutaAkira KinnoKohei SuzukiNorihiko Kamiura
    • Mitsushi IkedaManabu TanakaMasaki AtsutaAkira KinnoKohei SuzukiNorihiko Kamiura
    • H05G164
    • H01L27/14692H01L27/14659H01L27/14676H04N5/32H04N5/3658
    • An X-ray semiconductor detector has a pixel array structure in which a plurality of pixel elements are arrayed in a matrix. Each pixel element includes an X-ray/charge conversion film for generating charges in accordance with an incident X-ray, a storage capacitor for storing the signal charges generated in the X-ray/charge conversion film, a signal read transistor for reading the signal charges from the storage capacitor, and a protective diode arranged to remove excessive charges from the storage capacitor and prevent dielectric breakdown of the signal read transistor. The protective diode is arranged below the storage capacitor. Since the protective diode is arranged below the storage capacitor, it does not decrease the pixel density. Since the protective diode is covered with the storage capacitor, it can be shielded from an X-ray. Therefore, variations in OFF current of the protective diode by an X-ray and dielectric breakdown of the protective diode can be prevented.
    • X射线半导体检测器具有其中多个像素元件以矩阵排列的像素阵列结构。 每个像素元件包括用于根据入射的X射线产生电荷的X射线/电荷转换膜,用于存储在X射线/电荷转换膜中产生的信号电荷的存储电容器,用于读取X射线/ 来自存储电容器的信号电荷,以及保护二极管,被配置为从存储电容器去除过多的电荷并防止信号读取晶体管的电介质击穿。 保护二极管布置在存储电容器的下方。 由于保护二极管布置在存储电容器的下方,因此不会降低像素密度。 由于保护二极管被存储电容器覆盖,所以可以屏蔽X射线。 因此,可以防止保护二极管通过X射线的截止电流的变化和保护二极管的介电击穿。