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    • 31. 发明申请
    • Compiler apparatus, compiler method, and compiler program
    • 编译器,编译器方法和编译程序
    • US20070277162A1
    • 2007-11-29
    • US11802636
    • 2007-05-24
    • Akira TanakaFumihiro HatanoTomohiro YamanaMasaaki Mineo
    • Akira TanakaFumihiro HatanoTomohiro YamanaMasaaki Mineo
    • G06F9/45
    • G06F8/4441
    • A high-sped block is formed by generating and connecting a new basic block (contains an intermediate code obtained by performing variable replacing processing to a path replacement target variable of the intermediate code on a hot path of an original partial program and contains a branching intermediate code where a branching instruction on the hot path is converted so as to execute the hot path), and a basic block with an intermediate code for restoring value of path guarantee variable among the path replacement target variables to a value of an original variable. When an execution result of a conditional branching intermediate code is true, the speeding up of the original program is achieved through executing the basic block, and performing dependency analysis and dependency generation between the intermediate codes in the high-speed block and scheduling of the instructions.
    • 通过生成和连接新的基本块(包含通过对原始部分程序的热路径上的中间代码的路径替换目标变量执行可变替换处理而获得的中间代码)并且包含分支中间体 代码,其中热路径上的分支指令被转换以执行热路径),以及基本块,其具有用于将路径替换目标变量中的路径保证变量的值恢复为原始变量的值的中间代码。 当条件分支中间代码的执行结果为真时,通过执行基本块来实现原始程序的加速,并且在高速块中的中间代码和指令的调度之间执行依赖性分析和依赖关系生成 。
    • 33. 发明申请
    • Semiconductor laser device
    • 半导体激光器件
    • US20070158637A1
    • 2007-07-12
    • US11347658
    • 2006-02-06
    • Akira Tanaka
    • Akira Tanaka
    • H01L31/00
    • H01S5/34333B82Y20/00H01S5/2004H01S5/2009H01S5/3211H01S2301/18
    • A semiconductor laser device comprises: a first cladding layer provided on a substrate, the first cladding layer being made of nitride semiconductor of a first conductivity type; an active layer provided on the first cladding layer, the active layer being made of a quantum well structure using nitride semiconductor; and a second cladding layer provided on the active layer, the second cladding layer having a ridge waveguide and being made of nitride semiconductor of a second conductivity type. The first cladding layer is made of AlZGa1-ZN having an aluminum composition ratio Z of 0.04 or less and has a thickness of not less than 1.6 μm.
    • 一种半导体激光器件,包括:第一包覆层,设置在基板上,所述第一包层由第一导电类型的氮化物半导体制成; 设置在所述第一包层上的有源层,所述有源层由使用氮化物半导体的量子阱结构构成; 以及设置在所述有源层上的第二覆层,所述第二覆层具有脊波导,并且由第二导电类型的氮化物半导体制成。 第一包层由铝组成比Z为0.04以下的Al z Ga 1-Z N N制成,厚度不小于1.6μm。
    • 39. 发明申请
    • Semiconductor Laser Device
    • 半导体激光器件
    • US20060187988A1
    • 2006-08-24
    • US11276240
    • 2006-02-20
    • Akira TANAKA
    • Akira TANAKA
    • H01S5/20H01S5/00
    • B82Y20/00H01S5/0425H01S5/2009H01S5/2072H01S5/2214H01S5/222H01S5/2231H01S5/34333
    • In various aspects, a semiconductor laser device may include a first clad layer of a first conductivity type having a nitride semiconductor; an active layer provided on the first clad layer and having a nitride semiconductor; a second clad layer of a second conductivity type provided on the active layer having a nitride semiconductor, the second clad layer having a ridge waveguide and a side portion provided in both sides of the ridge waveguide; an upper electrode provided on the ridge waveguide; and a dielectric layer provided on a side surface of the ridge waveguide, wherein the side portion of the second clad layer has a lower activation ratio of a second conductivity type impurity than the ridge waveguide of the second clad layer.
    • 在各个方面中,半导体激光器件可以包括具有氮化物半导体的第一导电类型的第一覆盖层; 设置在所述第一包层上并具有氮化物半导体的有源层; 设置在具有氮化物半导体的有源层上的第二导电类型的第二覆盖层,所述第二覆盖层具有脊波导和设置在脊波导的两侧的侧部; 设置在脊波导上的上电极; 以及设置在脊状波导的侧面的电介质层,其中,所述第二覆盖层的侧部具有比所述第二覆盖层的所述脊波导更低的第二导电型杂质的活化率。