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1. 发明申请

US20180287012A1 OPTOELECTRONIC COMPONENT HAVING STRAY RADIATION 审中-公开
公开(公告)号：US20180287012A1
公开(公告)日：2018-10-04
申请号：US15525433
申请日：2015-11-10
申请人： OSRAM Opto Semiconductors GmbH
发明人： Jens Mueller , Christine Höss , Jens Dennemarck , Johann Koller
IPC分类号： H01L33/22 , H01L33/42 , H01L33/00 , H01L33/32 , G01R31/26 , H01S5/02 , H01S5/042
CPC分类号： H01L33/22 , G01R31/2635 , H01L33/0045 , H01L33/007 , H01L33/0095 , H01L33/32 , H01L33/42 , H01L2933/0016 , H01S5/0207 , H01S5/0425 , H01S5/2231
摘要： An optoelectronic component includes an active zone that generates electromagnetic radiation, wherein the electromagnetic radiation is guided in a guide plane, the electromagnetic radiation is output essentially in the guide plane, the active zone emits stray radiation laterally with respect to the guide plane, an electrical contact pad is provided, the contact pad is arranged outside the guide plane, the contact pad is formed by a surface at least partially covered by a conductive layer, the surface has inclined partial faces, and the electrically conductive layer on at least a subset of the inclined faces of the contact pad is configured to be so thin that electromagnetic stray radiation is emitted via the subset of the inclined faces.

2. 发明申请

US20170338625A1 SEMICONDUCTOR LASERS AND PROCESSES FOR THE PLANARIZATION OF SEMICONDUCTOR LASERS 审中-公开
公开(公告)号：US20170338625A1
公开(公告)日：2017-11-23
申请号：US15600483
申请日：2017-05-19
申请人： MACOM Technology Solutions Holdings, Inc.
发明人： Ali Badar Alamin DOW , Jason Daniel BOWKER , Malcolm R. GREEN
IPC分类号： H01S5/223 , H01S5/00 , C23C14/30 , H01S5/343 , H01S5/02
CPC分类号： H01S5/2231 , C23C14/30 , H01L21/31051 , H01L21/67098 , H01L21/68 , H01S5/0021 , H01S5/0202 , H01S5/0203 , H01S5/02461 , H01S5/0282 , H01S5/0425 , H01S5/1014 , H01S5/2202 , H01S5/2213 , H01S5/2214 , H01S5/343 , H01S2301/176
摘要： A laser structure may include a substrate, an active region arranged on the substrate, and a waveguide arranged on the active region. The waveguide may include a first surface and a second surface that join to form a first angle relative to the active region. A material may be deposited on the first surface and the second surface of the waveguide.

3. 发明申请

US20170237230A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
公开(公告)号：US20170237230A1
公开(公告)日：2017-08-17
申请号：US15583176
申请日：2017-05-01
申请人： Sharp Kabushiki Kaisha
发明人： Yoshinobu KAWAGUCHI , Takeshi KAMIKAWA
IPC分类号： H01S5/028 , H01S5/343 , H01S5/223
CPC分类号： H01S5/0287 , B82Y20/00 , H01L33/44 , H01S5/0021 , H01S5/028 , H01S5/0282 , H01S5/221 , H01S5/223 , H01S5/2231 , H01S5/34333 , H01S2304/00
摘要： A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide formed on the first coat film. The thickness of the second coat film is at least 80 nm and at most 1000 nm. Here, the thickness of the first coat film is preferably at least 6 nm and at most 200 nm.

4. 发明授权

US09397473B2 Laser diode and transmitter module 有权
标题翻译：激光二极管和变送器模块
公开(公告)号：US09397473B2
公开(公告)日：2016-07-19
申请号：US14500093
申请日：2014-09-29
申请人： Sumitomo Electric Device Innovations, Inc.
发明人： Yasuo Yamasaki , Nobumasa Okada
IPC分类号： H01S5/042 , H01S5/022 , H01S5/223
CPC分类号： H01S5/0425 , H01L2224/48091 , H01S5/02248 , H01S5/02276 , H01S5/02284 , H01S5/0427 , H01S5/2231 , H01L2924/00014
摘要： A transmitter module that includes a laser diode (LD) and a driver, each mounted on a sub-mount, is disclosed. The driver directly drives the LD by supplying a modulation signal, a bias signal, and a reference. Two signals are provided to a first pad of the LD, while, the reference is provided to the second pad of the LD. The second pad in the center thereof is formed relatively closer to the second facet of the LD opposite to the first facet through which the laser light is emitted.
摘要翻译：公开了一种包括激光二极管（LD）和驱动器的发射器模块，每个驱动器安装在子安装座上。驱动器通过提供调制信号，偏置信号和基准来直接驱动LD。两个信号被提供给LD的第一焊盘，而参考被提供给LD的第二焊盘。其中心的第二焊盘形成为相对更靠近LD的与第一小面相反的第二面，激光通过该第一小面被发射。

5. 发明申请

US20160036197A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：氮化物半导体发光器件
公开(公告)号：US20160036197A1
公开(公告)日：2016-02-04
申请号：US14881523
申请日：2015-10-13
申请人： Sharp Kabushiki Kaisha
发明人： Yoshinobu KAWAGUCHI , Takeshi Kamikawa
IPC分类号： H01S5/00 , H01S5/343 , H01S5/223 , H01S5/028 , H01S5/22
CPC分类号： H01S5/0287 , B82Y20/00 , H01L33/44 , H01S5/0021 , H01S5/028 , H01S5/0282 , H01S5/221 , H01S5/223 , H01S5/2231 , H01S5/34333 , H01S2304/00
摘要： A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide formed on the first coat film. The thickness of the second coat film is at least 80 nm and at most 1000 nm. Here, the thickness of the first coat film is preferably at least 6 nm and at most 200 nm.
摘要翻译：氮化物半导体发光器件包括在第一涂膜上形成的在发光部分形成的氮化铝或氮氧化铝的第一涂膜和氧化铝的第二涂膜。第二涂膜的厚度为80nm以上1000nm以下。这里，第一涂膜的厚度优选为6nm以上200nm以下。

6. 发明授权

US09054486B2 Optical amplifier device 有权
标题翻译：光放大器装置
公开(公告)号：US09054486B2
公开(公告)日：2015-06-09
申请号：US14089661
申请日：2013-11-25
申请人： FURUKAWA ELECTRIC CO., LTD.
发明人： Hideaki Hasegawa , Masaki Funabashi , Kazuaki Kiyota , Takeshi Akutsu , Noriyuki Yokouchi , Kazutaka Nara
IPC分类号： H01S5/00 , H01S5/042 , H01S5/50 , H01S5/026 , H01S5/223 , H01S5/22 , H01S5/125
CPC分类号： H01S5/0425 , H01S5/026 , H01S5/0261 , H01S5/125 , H01S5/2205 , H01S5/2231 , H01S5/5018 , H01S5/5036
摘要： An optical amplifier device comprising an input/output section that inputs incident light and outputs emission light; a polarized light splitting section that causes a polarized light component of the incident light input from the input/output section to branch, and outputs first polarization mode light having a first polarization and second polarization mode light having a second polarization different from the first polarization; a polarization converting section that receives the first polarization mode light, converts the first polarization to the second polarization, and outputs first polarization converted light; and an optical amplifying section that amplifies the first polarization converted light input to one end of a waveguide, outputs the resulting amplified first polarization converted light from another end of the waveguide, amplifies the second polarization mode light input to the other end of the waveguide, and outputs the resulting amplified second polarization mode light from the one end of the waveguide.
摘要翻译：一种光放大器装置，包括输入/输出部分，其输入入射光并输出发射光; 偏振光分离部，其使从所述输入输出部输入的入射光的偏振光分量分支，并输出具有第一偏振光和第二偏振光的第一偏振光，所述第一偏振光与所述第一偏振光具有第二偏振; 偏振转换部，其接收所述第一偏振光，将所述第一偏振转换为所述第二偏振，并输出第一偏振变换光; 以及光放大部，其对输入到波导的一端的第一偏振光转换光进行放大，从所述波导的另一端输出产生的放大后的第一偏振光变换光，放大输入到所述波导的另一端的第二偏振光，并从波导的一端输出产生的放大的第二偏振模式光。

7. 发明授权

US09048631B2 Laser light source 有权
标题翻译：激光光源
公开(公告)号：US09048631B2
公开(公告)日：2015-06-02
申请号：US14006472
申请日：2012-04-18
申请人： Christoph Eichler , Dimitri Dini , Alfred Lell
发明人： Christoph Eichler , Dimitri Dini , Alfred Lell
IPC分类号： H01S5/22 , H01S5/065 , B82Y20/00 , H01S5/10 , H01S5/223 , H01S5/227 , H01S5/02 , H01S5/028 , H01S5/20 , H01S5/343
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0217 , H01S5/0287 , H01S5/065 , H01S5/101 , H01S5/1014 , H01S5/1017 , H01S5/1064 , H01S5/2022 , H01S5/2031 , H01S5/2059 , H01S5/2215 , H01S5/2218 , H01S5/2219 , H01S5/2222 , H01S5/2231 , H01S5/2275 , H01S5/34326 , H01S5/34333 , H01S2301/166 , H01S2301/176 , H01S2301/185
摘要： A laser light source having a ridge waveguide structure includes a semi-conductor layer sequence having a number of functional layers and an active region that is suitable for generating laser light during operation. At least one of the functional layers is designed as a ridge of the ridge waveguide structure. The semiconductor layer sequence has a mode filter structure that is formed as part of the ridge and/or along a main extension plane of the functional layers next to the ridge and/or perpendicular to the main extension plane of the functional layers below the ridge.
摘要翻译：具有脊波导结构的激光光源包括具有多个功能层的半导体层序列和适用于在操作期间产生激光的有源区域。功能层中的至少一个被设计为脊形波导结构的脊。半导体层序列具有模式滤波器结构，其形成为脊的一部分和/或沿功能层的主延伸平面形成在脊附近和/或垂直于脊下方的功能层的主延伸平面。

8. 发明申请

US20150110144A1 DISTRIBUTED FEEDBACK-LASER DIODES 审中-公开
标题翻译：分布式反馈激光二极管
公开(公告)号：US20150110144A1
公开(公告)日：2015-04-23
申请号：US14570975
申请日：2014-12-15
申请人： Electronics and Telecommunications Research Institute
发明人： Oh Kee KWON , Su Hwan OH , Young Ahn LEEM , O-Kyun KWON , Young-Tak HAN , Yongsoon BAEK , Yun C. CHUNG
IPC分类号： H01S5/22
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/1039 , H01S5/1225 , H01S5/1243 , H01S5/2213 , H01S5/222 , H01S5/2231 , H01S5/3213 , H01S5/34306
摘要： A distributed feedback-laser diode may include a substrate, a lower cladding layer having a grating on the substrate, an active layer disposed on the lower cladding layer, a first upper cladding layer disposed on the active layer, a phase-shift region extending in a first direction on the first upper cladding layer, and a ridge waveguide layer extending in a second direction crossing the first direction on the phase-shift region.
摘要翻译：分布式反馈激光二极管可以包括基板，在基板上具有光栅的下包层，设置在下包层上的有源层，设置在有源层上的第一上包层，第一上包层上的第一方向，以及在相移区域上与第一方向交叉的第二方向延伸的脊波导层。

9. 发明申请

US20150036709A1 SEMICONDUCTOR LASER DEVICE 有权
标题翻译：半导体激光器件
公开(公告)号：US20150036709A1
公开(公告)日：2015-02-05
申请号：US14519088
申请日：2014-10-20
申请人： ROHM CO., LTD.
发明人： Shinya TAKADO , Junichi KASHIWAGI
IPC分类号： H01S5/343 , H01S5/32 , H01S5/042
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/0421 , H01S5/0425 , H01S5/2009 , H01S5/2031 , H01S5/2214 , H01S5/2231 , H01S5/3063 , H01S5/3213 , H01S5/3216
摘要： A semiconductor laser device generates blue-violet light with an emission wavelength of 400 to 410 nm. The device includes an n-type group III nitride semiconductor layer, an active layer laminated on the n-type semiconductor layer and having an InGaN quantum well layer, a p-type group III nitride semiconductor layer laminated on the active layer, and a transparent electrode contacting the p-type semiconductor layer and serving as a clad. The n-type semiconductor layer includes an n-type clad layer and an n-type guide layer disposed between the clad layer and the active layer. The guide layer includes a superlattice layer in which an InGaN layer and an AlxGa1-xN layer (0≦X
摘要翻译：半导体激光装置产生发射波长为400〜410nm的蓝紫色光。该器件包括n型III族氮化物半导体层，层叠在n型半导体层上并具有InGaN量子阱层的有源层，层叠在有源层上的p型III族氮化物半导体层和透明电极与p型半导体层接触并用作包层。 n型半导体层包括n型覆盖层和设置在覆盖层和有源层之间的n型引导层。引导层包括其中周期性地层叠InGaN层和Al x Ga 1-x N层（0＆lt; 1lE; X <1）的超晶格层，超晶格层与活性层接触并具有2.6或更低的平均折射率。 InGaN层的In组成低于InGaN量子阱层的In组成。

10. 发明授权

US08937980B2 Distributed feedback-laser diodes 有权
标题翻译：分布式反馈激光二极管
公开(公告)号：US08937980B2
公开(公告)日：2015-01-20
申请号：US13614280
申请日：2012-09-13
申请人： Oh Kee Kwon , Su Hwan Oh , Young Ahn Leem , O-Kyun Kwon , Young-Tak Han , Yongsoon Baek , Yun C. Chung
发明人： Oh Kee Kwon , Su Hwan Oh , Young Ahn Leem , O-Kyun Kwon , Young-Tak Han , Yongsoon Baek , Yun C. Chung
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/1039 , H01S5/1225 , H01S5/1243 , H01S5/2213 , H01S5/222 , H01S5/2231 , H01S5/3213 , H01S5/34306
摘要： Distributed feedback-laser diodes are provided. The distributed feedback-laser diode may include a substrate, a lower cladding layer having a grating on the substrate, an active layer disposed on the lower cladding layer, a first upper cladding layer disposed on the active layer, a phase-shift region extending in a first direction on the first upper cladding layer, and a ridge waveguide layer extending in a second direction crossing the first direction on the phase-shift region.
摘要翻译：提供分布式反馈激光二极管。分布式反馈激光二极管可以包括基板，在基板上具有光栅的下包层，设置在下包层上的有源层，设置在有源层上的第一上包层，第一上包层上的第一方向，以及在相移区域上与第一方向交叉的第二方向延伸的脊波导层。

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