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31. 发明申请

US20100019977A1 ANTENNA TEST APPARATUS 审中-公开
标题翻译：天线测试装置
公开(公告)号：US20100019977A1
公开(公告)日：2010-01-28
申请号：US12181292
申请日：2008-07-28
申请人： Chih-Wei Chang , Yun-Tung Chang
发明人： Chih-Wei Chang , Yun-Tung Chang
IPC分类号： G01R29/08
CPC分类号： G01R29/10
摘要： In an antenna test apparatus of the type having a platform for carrying an antenna for test and a pressure board vertically movable by a lifter to hold down a test antenna in the platform for test, the platform has a top flange formed of an electromagnetic wave absorbing material and raised around the periphery, and the pressure board has a bottom flange formed of an electromagnetic wave absorbing material for stopping against the top flange of the platform to protect an antenna to be tested in between the platform and a bottom soft flange of the pressure board against external electromagnetic noises.
摘要翻译：在具有用于承载用于测试的天线的平台的类型的天线测试装置和由升降机可垂直移动以在测试平台中保持测试天线的压板上，平台具有由电磁波吸收的顶部凸缘材料并围绕周边隆起，并且压板具有由电磁波吸收材料形成的底部凸缘，用于阻止平台的顶部凸缘，以保护被测试的天线在平台和压力的底部软凸缘之间防止外部电磁噪音。

32. 发明申请

US20090166768A1 Semiconductor device with metal silicides having different phases 有权
标题翻译：具有不同相位的金属硅化物的半导体器件
公开(公告)号：US20090166768A1
公开(公告)日：2009-07-02
申请号：US12322118
申请日：2009-01-27
申请人： Wei-Jung Lin , Cheng-Tung Lin , Chih-Wei Chang , Shau-Lin Shue
发明人： Wei-Jung Lin , Cheng-Tung Lin , Chih-Wei Chang , Shau-Lin Shue
IPC分类号： H01L29/78
CPC分类号： H01L21/28097 , H01L29/4975 , H01L29/517
摘要： A fully silicided gate with a selectable work function includes a gate dielectric over the substrate, a first metal silicide layer over the gate dielectric, and a second metal silicide layer wherein the first metal silicide has a different phase then the second metal silicide layer. The metal silicide layers comprises at least one alloy element. The concentration of the alloy element on the interface between the gate dielectric and the metal silicide layers influence the work function of the gate.
摘要翻译：具有可选择功函数的完全硅化栅包括在衬底上的栅极电介质，栅极电介质上的第一金属硅化物层和第二金属硅化物层，其中第一金属硅化物具有与第二金属硅化物层不同的相。金属硅化物层包括至少一种合金元素。栅极电介质和金属硅化物层之间的界面上的合金元素的浓度影响栅极的功函数。

33. 发明授权

US07522409B2 Positioning mechanism 有权
标题翻译：定位机制
公开(公告)号：US07522409B2
公开(公告)日：2009-04-21
申请号：US11240423
申请日：2005-09-30
申请人： Hsien-Yuan Lin , Ming-Jen Yu , Chih-Wei Chang , Yeh-Cheng Tan
发明人： Hsien-Yuan Lin , Ming-Jen Yu , Chih-Wei Chang , Yeh-Cheng Tan
IPC分类号： H05K7/12
CPC分类号： H01R13/629 , H01R13/635
摘要： A positioning mechanism comprises a slide base, a rotation arm and an elastic member. The slide base is disposed over a bottom surface of a second device and is slidable in first and second sliding directions. The sliding base has a track defining a closed sliding path that comprises a first positioning point, a first release point, a second positioning point, and second release point. The rotation arm comprises first and second ends, the first end being disposed on the bottom surface around a pivot, and the second end having a slide member capable of being positioned at the first positioning point or the second positioning point along the sliding path of the track. The elastic member is provided on the bottom surface and is configured to cause the second end of the rotation arm to rotate and to cause the slide base to slide.
摘要翻译：定位机构包括滑动基座，旋转臂和弹性构件。滑动底座设置在第二装置的底表面上，并可在第一和第二滑动方向上滑动。滑动基座具有定义包括第一定位点，第一释放点，第二定位点和第二释放点的封闭滑动路径的轨道。所述旋转臂包括第一端和第二端，所述第一端围绕枢轴设置在所述底表面上，并且所述第二端具有滑动构件，所述滑动构件能够沿着所述第一和第二端的滑动路径定位在所述第一定位点或所述第二定位点跟踪。弹性构件设置在底面上，并且构造成使旋转臂的第二端旋转并使滑动基座滑动。

34. 发明申请

US20080291031A1 WIRELESS WARNING SYSTEM AND METHOD OF USING THE SAME 审中-公开
标题翻译：无线警告系统及其使用方法
公开(公告)号：US20080291031A1
公开(公告)日：2008-11-27
申请号：US11926663
申请日：2007-10-29
申请人： CHIN-YUAN CHEN , CHIH-WEI CHANG
发明人： CHIN-YUAN CHEN , CHIH-WEI CHANG
IPC分类号： G08B23/00
CPC分类号： G08B21/0247
摘要： A wireless warning system (100) includes a primary terminal (10) and a secondary terminal (20). The primary terminal includes a first alarm apparatus (11) and a first communicating apparatus (12). The secondary terminal includes a second alarm apparatus (21) and a second communicating apparatus (22). The first communicating apparatus and the second communicating apparatus contact with each other and respectively calculate a distance between the primary terminal and the secondary terminal. The first alarm apparatus and the second alarm apparatus alarm when the calculated distance being beyond a predetermined safe distance.
摘要翻译：无线警报系统（100）包括主终端（10）和次终端（20）。主终端包括第一报警装置（11）和第一通信装置（12）。辅助终端包括第二报警装置（21）和第二通信装置（22）。第一通信装置和第二通信装置彼此接触并分别计算主终端和次终端之间的距离。当计算出的距离超过预定的安全距离时，第一报警装置和第二报警装置报警。

35. 发明申请

US20080272974A1 Multiband planar antenna and electrical apparatus using the same 审中-公开
标题翻译：多频平面天线和使用该天线的电气设备
公开(公告)号：US20080272974A1
公开(公告)日：2008-11-06
申请号：US12149548
申请日：2008-05-05
申请人： Chih-Wei Chang
发明人： Chih-Wei Chang
IPC分类号： H01Q13/10 , H01Q9/04
CPC分类号： H01Q9/0421 , H01Q5/364 , H01Q13/10
摘要： A multi-band planar antenna including a metal plate, a first radiation portion, a second radiation portion, and a grounding portion is provided. The plate includes a first and a second edge. The first radiation portion is configured on the upper of the plate by a first slot, and the first slot extends to the inner of the plate from the first edge. The second radiation portion is configured on the upper side of the plate adjacent to the second edge by a second slot and a third slot adjacent to the first radiation portion. The second slot extends to the inner of the metal plate from the second edge. The third slot is formed between the first and the second slot. The grounding portion is formed on the lower of the metal plate. The first and the second radiation portion transmit and receive the low-band and high-band of RF signal respectively.
摘要翻译：提供了包括金属板，第一辐射部分，第二辐射部分和接地部分的多频带平面天线。板包括第一和第二边缘。第一辐射部分通过第一狭槽构造在板的上部，并且第一狭槽从第一边缘延伸到板的内部。第二辐射部分通过与第一辐射部分相邻的第二狭槽和第三狭槽构造在邻近第二边缘的板的上侧上。第二槽从第二边缘延伸到金属板的内部。第三槽形成在第一槽和第二槽之间。接地部形成在金属板的下部。第一和第二辐射部分分别发射和接收RF信号的低频带和高频带。

36. 发明授权

US07432559B2 Silicide formation on SiGe 有权
标题翻译： SiGe上的硅化物形成
公开(公告)号：US07432559B2
公开(公告)日：2008-10-07
申请号：US11523683
申请日：2006-09-19
申请人： Jerry Lai , Chii-Ming Wu , Chih-Wei Chang , Shau-Lin Shue
发明人： Jerry Lai , Chii-Ming Wu , Chih-Wei Chang , Shau-Lin Shue
IPC分类号： H01L29/40
CPC分类号： H01L29/66636 , H01L21/26506 , H01L21/2652 , H01L29/165 , H01L29/665 , H01L29/6656 , H01L29/66621 , H01L29/7848 , Y10S438/933
摘要： A semiconductor structure includes a first silicon-containing layer comprising an element selected from the group consisting essentially of carbon and germanium wherein the silicon-containing layer has a first atomic percentage of the element to the element and silicon, a second silicon-containing layer comprising the element over the first silicon-containing layer, and a silicide layer on the second silicon-containing layer. The element in the second silicon-containing layer has a second atomic percentage of the element to the element and silicon, wherein the second atomic percentage is substantially lower than the first atomic percentage.
摘要翻译：半导体结构包括第一含硅层，其包含选自基本上由碳和锗组成的组的元素，其中所述含硅层具有元素与元素和硅的元素的第一原子百分比，第二含硅层包含第一含硅层上的元素，以及第二含硅层上的硅化物层。第二含硅层中的元素具有与元素和硅的元素的第二原子百分比，其中第二原子百分比基本上低于第一原子百分比。

37. 发明申请

US20080199978A1 System and method for film stress and curvature gradient mapping for screening problematic wafers 有权
标题翻译：用于筛选有问题的晶片的膜应力和曲率梯度映射的系统和方法
公开(公告)号：US20080199978A1
公开(公告)日：2008-08-21
申请号：US11707662
申请日：2007-02-16
申请人： Hsueh-Hung Fu , Chih-Wei Chang , Shih-Chang Chen , Chin-Piao Chang , Shing-Chyang Pan , Wei-Jung Lin , Tsung-Hsun Huang
发明人： Hsueh-Hung Fu , Chih-Wei Chang , Shih-Chang Chen , Chin-Piao Chang , Shing-Chyang Pan , Wei-Jung Lin , Tsung-Hsun Huang
IPC分类号： G01R31/26
CPC分类号： G01R31/2831 , H01L22/12
摘要： A method of testing a wafer after a current top layer is formed over the wafer. Stress data is collected for the wafer after forming the current top layer. The stress data is derived from changes in wafer curvature. The stress data includes: stress-xx in an x direction and stress-yy in a y direction for each area of a set of finite areas on the wafer, the stress-xx and stress-yy both being derived from wafer-curvature-change-xx in the x direction for each area of the set of finite areas and from wafer-curvature-change-yy in the y direction for each area of the set of finite areas; and the stress-xy being derived from wafer-curvature-change-xy, wherein wafer-curvature-change-xy is a change in wafer twist in the x-y plane for each area of the set of finite areas. A stress gradient vector (and/or its norm) is calculated and used to evaluate the investigating single or multiple accumulated layer.
摘要翻译：在晶片上形成当前顶层之后测试晶片的方法。在形成当前顶层之后，为晶片收集应力数据。应力数据来源于晶片曲率的变化。应力数据包括：在x方向上的应力x x和在晶片上的一组有限区域的每个区域的ay方向上的应力yy，应力xx和应力yy都源自晶片曲率变化 - x x在x方向上对于有限区域集合中的每个区域以及从y方向的晶片曲率变化yy到该有限区域集合中的每个区域; 并且应力xy从晶片曲率变化xy得到，其中晶片曲率变化xy是在该有限区域的每个区域的x-y平面中的晶片扭转的变化。应力梯度矢量（和/或其范数）被计算并用于评估调查单个或多个累积层。

38. 发明申请

US20080122018A1 WORK FUNCTION ADJUSTMENT ON FULLY SILICIDED (FUSI) GATE 有权
标题翻译：完全硅酸盐（FUSI）门的工作功能调整
公开(公告)号：US20080122018A1
公开(公告)日：2008-05-29
申请号：US11458503
申请日：2006-07-19
申请人： Wei-Jung Lin , Cheng-Tung Lin , Chih-Wei Chang , Shau-Lin Shue
发明人： Wei-Jung Lin , Cheng-Tung Lin , Chih-Wei Chang , Shau-Lin Shue
IPC分类号： H01L29/78 , H01L21/28
CPC分类号： H01L21/28097 , H01L29/4975 , H01L29/517
摘要： A fully silicided gate with a selectable work function includes; a gate dielectric over the substrate; and a first metal silicide layer over the gate dielectric, and a second metal silicide layer wherein the first metal silicide has a different phase then the second metal silicide layer. The metal silicide layers comprises at least one alloy element. The concentration of the alloy element on the interface between the gate dielectric and the metal silicide layers influence the work function of the gate.
摘要翻译：具有可选工作功能的完全硅化栅包括：衬底上的栅极电介质; 以及在所述栅极电介质上的第一金属硅化物层，以及第二金属硅化物层，其中所述第一金属硅化物具有与所述第二金属硅化物层不同的相。金属硅化物层包括至少一种合金元素。栅极电介质和金属硅化物层之间的界面上的合金元素的浓度影响栅极的功函数。

39. 发明申请

US20080055842A1 Computer module with two transmission interfaces 审中-公开
标题翻译：具有两个传输接口的计算机模块
公开(公告)号：US20080055842A1
公开(公告)日：2008-03-06
申请号：US11515262
申请日：2006-09-01
申请人： Chih-Wei Chang , Cheng-Yun Lee
发明人： Chih-Wei Chang , Cheng-Yun Lee
IPC分类号： G06F1/16 , H05K5/00 , H05K7/00
CPC分类号： G06F1/182 , G06F1/1632 , G06F1/183
摘要： A computer module with two transmission interfaces has a housing, a USB interface, an eSATA interface and a connecting seat. The housing has a cavity defined therein. The USB interface and the eSATA interface are mounted in the cavity side by side. The USB and eSATA interfaces mounted in the computer casing need only one opening, which reduces the cost of the computer casing. In addition, the computer module can also be applied to flat and thin notebooks or LCDs due to the “side by side” design.
摘要翻译：具有两个传输接口的计算机模块具有壳体，USB接口，eSATA接口和连接座。壳体具有限定在其中的空腔。 USB接口和eSATA接口并排安装在空腔中。安装在计算机外壳中的USB和eSATA接口只需要一个开口，从而降低了计算机外壳的成本。此外，由于“并排”设计，计算机模块也可以应用于平板和薄型笔记本电脑或LCD。

40. 发明申请

US20070178696A1 Method for silicide formation on semiconductor devices 有权
标题翻译：在半导体器件上形成硅化物的方法
公开(公告)号：US20070178696A1
公开(公告)日：2007-08-02
申请号：US11343648
申请日：2006-01-30
申请人： Chii-Ming Wu , Shih-Wei Chou , Gin Wang , Cheng-Tung Lin , Chih-Wei Chang , Shau-Lin Shue
发明人： Chii-Ming Wu , Shih-Wei Chou , Gin Wang , Cheng-Tung Lin , Chih-Wei Chang , Shau-Lin Shue
IPC分类号： H01L21/44
CPC分类号： H01L21/28518
摘要： A method for forming nickel silicide includes degassing a semiconductor substrate that includes a silicon surface. After the degassing operation, the substrate is cooled prior to a metal deposition process, during a metal deposition process, or both. The cooling suppresses the temperature of the substrate to a temperature less than the temperature required for the formation of nickel silicide. Nickel diffusion is minimized during the deposition process. After deposition, an annealing process is used to urge the formation of a uniform silicide film. In various embodiments, the metal film may include a binary phase alloy containing nickel and a further element.
摘要翻译：一种形成硅化镍的方法包括对包含硅表面的半导体衬底脱气。在脱气操作之后，在金属沉积工艺，金属沉积工艺期间或两者之间冷却基板。冷却将基板的温度抑制到低于形成硅化镍所需的温度的温度。在沉积过程中镍的扩散最小化。沉积后，使用退火工艺来促使形成均匀的硅化物膜。在各种实施例中，金属膜可以包括含有镍和另一元素的二元相合金。

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