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1. 发明申请

US20140029295A1 HYBRID LIGHT GUIDE PLATE AND DISPLAY DEVICE 有权
标题翻译：混合光导板和显示设备
公开(公告)号：US20140029295A1
公开(公告)日：2014-01-30
申请号：US13951468
申请日：2013-07-26
申请人： Chun-Chung Hsiao , Shih-Chang Chen , Cheng-Tsung Li , Tzeng-Ke Shiau
发明人： Chun-Chung Hsiao , Shih-Chang Chen , Cheng-Tsung Li , Tzeng-Ke Shiau
IPC分类号： F21V8/00
CPC分类号： G02B6/0011 , G02B6/0043 , G02B6/005 , G02B6/0088 , G02F1/133308 , G02F1/133615 , G02F2001/133317
摘要： A display device includes a housing, a frame bonded to the housing, and a display module. The display module includes a back cover bonded to the frame, a light guide plate (LGP), a support element, a display panel, and an optical film set. The LGP is supported on the back cover and has a light exiting surface and an opposite back surface. At least two sides of the LGP's back surface are adhered on the back cover, and the LGP is made of glass. The support element and display panel are supported respectively on the LGP and support element. The optical film set is between the display panel and LGP. A hybrid LGP includes a first light guide sub-plates and a second light guide sub-plate. The second light guide sub-plate is stacked on and bonded to the first light guide sub-plate.
摘要翻译：显示装置包括壳体，结合到壳体的框架和显示模块。显示模块包括接合到框架的后盖，导光板（LGP），支撑元件，显示面板和光学膜组。 LGP支撑在后盖上，并具有光出射表面和相对的后表面。 LGP的后表面的至少两侧粘附在后盖上，LGP由玻璃制成。支撑元件和显示面板分别支撑在LGP和支撑元件上。光学胶片组在显示面板和LGP之间。混合式LGP包括第一导光子板和第二导光子板。第二导光子板堆叠在第一导光子板上并结合到第一导光子板上。

2. 发明授权

US08564018B2 Relaxed silicon germanium substrate with low defect density 有权
标题翻译：具有低缺陷密度的松弛硅锗衬底
公开(公告)号：US08564018B2
公开(公告)日：2013-10-22
申请号：US12038091
申请日：2008-02-27
申请人： Chun Chich Lin , Yee-Chia Yeo , Chien-Chao Huang , Chao-Hsiung Wang , Tien-Chih Chang , Chenming Hu , Fu-Liang Yang , Shih-Chang Chen , Mong-Song Liang , Liang-Gi Yao
发明人： Chun Chich Lin , Yee-Chia Yeo , Chien-Chao Huang , Chao-Hsiung Wang , Tien-Chih Chang , Chenming Hu , Fu-Liang Yang , Shih-Chang Chen , Mong-Song Liang , Liang-Gi Yao
IPC分类号： H01L21/02
CPC分类号： H01L29/1054 , H01L21/02381 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/324
摘要： A structure for an integrated circuit is disclosed. The structure includes a crystalline substrate and four crystalline layers. The first crystalline layer of first lattice constant is positioned on the crystalline substrate. The second crystalline layer has a second lattice constant different from the first lattice constant, and is positioned on said first crystalline layer. The third crystalline layer has a third lattice constant different than said second lattice constant, and is positioned on said second crystalline layer. The strained fourth crystalline layer includes, at least partially, a MOSFET device.
摘要翻译：公开了一种用于集成电路的结构。该结构包括晶体衬底和四个结晶层。第一晶格常数的第一晶体层位于晶体衬底上。第二晶体层具有不同于第一晶格常数的第二晶格常数，并且位于所述第一晶体层上。第三晶体层具有与所述第二晶格常数不同的第三晶格常数，并且位于所述第二晶体层上。应变的第四晶体层至少部分地包括MOSFET器件。

3. 发明授权

US08557669B2 MOSFET device with localized stressor 有权
标题翻译：具有局部应力源的MOSFET器件
公开(公告)号：US08557669B2
公开(公告)日：2013-10-15
申请号：US12176655
申请日：2008-07-21
申请人： Chien-Hao Chen , Pang-Yen Tsai , Chie-Chien Chang , Tze-Liang Lee , Shih-Chang Chen
发明人： Chien-Hao Chen , Pang-Yen Tsai , Chie-Chien Chang , Tze-Liang Lee , Shih-Chang Chen
IPC分类号： H01L21/42
CPC分类号： H01L29/7848 , H01L21/26506 , H01L21/28518 , H01L21/28525 , H01L21/823807 , H01L29/165 , H01L29/45 , H01L29/517 , H01L29/518 , H01L29/66628 , H01L29/66636 , H01L29/7834
摘要： MOSFETs having localized stressors are provided. The MOSFET has a stress-inducing layer formed in the source/drain regions, wherein the stress-inducing layer comprises a first semiconductor material and a second semiconductor material. A treatment is performed on the stress-inducing layer such that a reaction is caused with the first semiconductor material and the second semiconductor material is forced lower into the stress-inducing layer. The stress-inducing layer may be either a recessed region or non-recessed region. A first method involves forming a stress-inducing layer, such as SiGe, in the source/drain regions and performing a nitridation or oxidation process. A nitride or oxide film is formed in the top portion of the stress-inducing layer, forcing the Ge lower into the stress-inducing layer. Another method embodiment involves forming a reaction layer over the stress-inducing layer and performing a treatment process to cause the reaction layer to react with the stress-inducing layer.
摘要翻译：提供具有局部应力的MOSFET。 MOSFET具有形成在源极/漏极区域中的应力诱导层，其中应力诱导层包括第一半导体材料和第二半导体材料。对应力诱导层进行处理，使得由第一半导体材料引起反应，并且第二半导体材料被迫下降到应力诱导层中。应力诱导层可以是凹陷区域或非凹陷区域。第一种方法包括在源极/漏极区域中形成诸如SiGe的应力诱导层并进行氮化或氧化过程。在应力诱导层的顶部形成氮化物或氧化物膜，迫使Ge较低进入应力诱导层。另一方法实施例涉及在应力诱导层上形成反应层，并进行处理工艺以使反应层与应力诱导层反应。

4. 发明授权

US08441169B2 Voltage converter and driving system using such voltage converter 有权
标题翻译：电压转换器和驱动系统采用这种电压转换器
公开(公告)号：US08441169B2
公开(公告)日：2013-05-14
申请号：US12782408
申请日：2010-05-18
申请人： Shih Chang Chen , Ying Lun Chang , Rong Ho Yu , Daw Ping Chang , Kuei Liang Chiang
发明人： Shih Chang Chen , Ying Lun Chang , Rong Ho Yu , Daw Ping Chang , Kuei Liang Chiang
IPC分类号： H01L41/09
CPC分类号： H01L41/042 , F04B43/095
摘要： A voltage converter is provided for receiving a low input DC voltage and driving a piezoelectric actuator of a fluid transportation device. The voltage converter includes plural capacitors, a resistor and a boost chip. The boost chip is connected with the plural capacitors and the resistor, has a switch element and a polar switching circuit, and receives the low input DC voltage. The low input DC voltage is increased and multiplied to a high DC voltage by a switching operation of the switch element. The high DC voltage is converted into an output AC voltage by the polar switching circuit so as to drive the piezoelectric actuator. An operating frequency of the boost chip is controlled by the plural capacitors and the resistor.
摘要翻译：提供电压转换器用于接收低输入直流电压并驱动流体输送装置的压电致动器。电压转换器包括多个电容器，电阻器和升压芯片。升压芯片与多个电容器和电阻器连接，具有开关元件和极性开关电路，并且接收低输入直流电压。通过开关元件的开关操作，低输入直流电压增加并乘以高直流电压。通过极性开关电路将高直流电压转换为输出交流电压，以驱动压电致动器。升压芯片的工作频率由多个电容器和电阻器控制。

5. 发明授权

US08222136B2 Method of forming contacts for a semiconductor device 有权
标题翻译：形成半导体器件的触点的方法
公开(公告)号：US08222136B2
公开(公告)日：2012-07-17
申请号：US12906868
申请日：2010-10-18
申请人： Yuan-Tien Tu , Tsai-Chun Li , Huan-Just Lin , Shih-Chang Chen
发明人： Yuan-Tien Tu , Tsai-Chun Li , Huan-Just Lin , Shih-Chang Chen
IPC分类号： H01L21/4763
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/76816
摘要： The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a layer over a substrate. The method includes forming a first opening in the layer that exposes a first region of the substrate. The method includes removing a first oxidation layer formed over the first region through a first sputtering process. The method includes filling the first opening with a conductive material. The method includes forming a second opening in the layer that exposes a second region of the substrate, the second region being different from the first region. The method includes removing a second oxidation layer formed over the second region through a second sputtering process. One of the first and second sputtering processes is more powerful than the other.
摘要翻译：本公开提供了制造半导体器件的方法。该方法包括在衬底上形成层。所述方法包括在所述层中形成暴露所述衬底的第一区域的第一开口。该方法包括通过第一溅射工艺去除在第一区域上形成的第一氧化层。该方法包括用导电材料填充第一开口。所述方法包括在所述层中形成暴露所述衬底的第二区域的第二开口，所述第二区域不同于所述第一区域。该方法包括通过第二溅射工艺除去在第二区域上形成的第二氧化层。第一和第二溅射工艺之一比另一个更强大。

6. 发明申请

US20120173132A1 VEHICLE EMISSION MONITORING DEVICE AND METHOD THEREOF 有权
标题翻译：车辆排放监测装置及其方法
公开(公告)号：US20120173132A1
公开(公告)日：2012-07-05
申请号：US12980957
申请日：2010-12-29
申请人： KE-WEI LIN , SHIH-CHANG CHEN , YU-CHI SHIUE , CHIH-WEI CHUANG
发明人： KE-WEI LIN , SHIH-CHANG CHEN , YU-CHI SHIUE , CHIH-WEI CHUANG
IPC分类号： G06F19/00
CPC分类号： F01N11/00 , F01N2560/00 , F01N2900/08 , G07C5/0808 , Y02T10/47
摘要： The present invention discloses a vehicle emission monitoring device and a method thereof. The method of the present invention comprises steps: obtaining an OBS instantaneous fuel consumption and a carbon dioxide emission from an on-board emission measurement system (OBS); working out an OBS fuel consumption-carbon dioxide emission relationship with a statistical method or a regression method; obtaining an OBD instantaneous fuel consumption from an on-board diagnostic (OBD) system; establishing an OBS-OBD fuel consumption relationship; and converting the OBD instantaneous fuel consumption into an carbon dioxide emission according to the OBS-OBD fuel consumption relationship and the OBS fuel consumption-carbon dioxide emission relationship.
摘要翻译：本发明公开了一种车辆排放监视装置及其方法。本发明的方法包括以下步骤：从车载发射测量系统（OBS）获得OBS瞬时燃料消耗和二氧化碳排放; 用统计方法或回归方法计算OBS燃料消耗 - 二氧化碳排放关系; 从车载诊断（OBD）系统获得OBD瞬时燃油消耗; 建立OBS-OBD燃料消耗关系; 并根据OBS-OBD燃料消耗关系和OBS燃料消耗 - 二氧化碳排放关系将OBD瞬时燃料消耗转换为二氧化碳排放。

7. 发明申请

US20120092418A1 SINGLE-NOZZLE INKJET HEAD 审中-公开
标题翻译：单喷嘴喷头
公开(公告)号：US20120092418A1
公开(公告)日：2012-04-19
申请号：US13272438
申请日：2011-10-13
申请人： Shih-Chang Chen , Shih-Che Chiu , Tsung-Pat Chou
发明人： Shih-Chang Chen , Shih-Che Chiu , Tsung-Pat Chou
IPC分类号： B41J2/14
CPC分类号： B41J2/14201 , B41J2202/15 , B41J2202/19
摘要： A single-nozzle inkjet head includes a first chamber member and a second chamber member. The first chamber member has a first flow channel. The second chamber member is detachably connected with the first chamber member. The second chamber member includes a main body, a nozzle plate and an actuator. The main body has a second flow channel, wherein the second flow channel is in communication with the first flow channel for transporting a fluid. The nozzle plate is disposed on the main body, and has a nozzle. The actuator is disposed on the nozzle plate, and located around the nozzle.
摘要翻译：单喷嘴喷墨头包括第一室构件和第二室构件。第一室构件具有第一流动通道。第二室构件与第一室构件可拆卸地连接。第二室构件包括主体，喷嘴板和致动器。主体具有第二流动通道，其中第二流动通道与用于输送流体的第一流动通道连通。喷嘴板设置在主体上，并具有喷嘴。致动器设置在喷嘴板上并位于喷嘴周围。

8. 发明授权

US08157549B2 Multi-channel fluid conveying apparatus 有权
标题翻译：多通道流体输送装置
公开(公告)号：US08157549B2
公开(公告)日：2012-04-17
申请号：US12379563
申请日：2009-02-25
申请人： Shih Chang Chen , Chiang Ho Cheng , Ying Lun Chang , Rong Ho Yu , Shih Che Chiu
发明人： Shih Chang Chen , Chiang Ho Cheng , Ying Lun Chang , Rong Ho Yu , Shih Che Chiu
IPC分类号： F16K11/02
CPC分类号： F16K99/0001 , B41J2/17596 , Y10T137/87676
摘要： A multi-channel fluid conveying apparatus, for delivering a fluid, includes a valve seat, a valve cover, a valve membrane, a plurality of temporary-deposit chambers, and an actuating device. The valve seat includes at least one inlet channel and at least one outlet channel. The valve cover is arranged on the valve seat. The valve membrane is interposed between the valve seat and the valve cover and includes a plurality of valve structures made of the same material with the same thickness, wherein at least one of the valve structures has a rigidity different from those of other valve structures. The plurality of temporary-deposit chambers is interposed between the valve membrane and the valve cover and between the valve membrane and the valve seat. The actuating device is, having a periphery, fixed to the valve cover.
摘要翻译：用于输送流体的多通道流体输送装置包括阀座，阀盖，阀膜，多个临时沉积室和致动装置。阀座包括至少一个入口通道和至少一个出口通道。阀盖布置在阀座上。阀膜介于阀座和阀盖之间，并且包括由具有相同厚度的相同材料制成的多个阀结构，其中至少一个阀结构具有与其它阀结构不同的刚度。多个临时沉积室介于阀膜与阀盖之间以及阀膜与阀座之间。致动装置具有周边固定在阀盖上。

9. 发明授权

US08115263B2 Laminated silicon gate electrode 有权
标题翻译：层压硅栅电极
公开(公告)号：US08115263B2
公开(公告)日：2012-02-14
申请号：US11041178
申请日：2005-01-24
申请人： Chia-Lin Chen , Liang-Gi Yao , Shih-Chang Chen
发明人： Chia-Lin Chen , Liang-Gi Yao , Shih-Chang Chen
IPC分类号： H01L29/78
CPC分类号： H01L21/02532 , H01L21/02595 , H01L21/2022 , H01L21/28035 , H01L21/3003 , H01L29/4925 , H01L29/78
摘要： Within a method for forming a silicon layer, there is employed at least one sub-layer formed of a higher crystalline silicon material and at least one sub-layer formed of a lower crystalline silicon material. The lower crystalline silicon material is formed employing a hydrogen treatment of the higher crystalline silicon material. The method is particularly useful for forming polysilicon based gate electrodes with enhanced dimensional control and enhanced performance.
摘要翻译：在形成硅层的方法中，使用由较高结晶硅材料形成的至少一个子层和由下部结晶硅材料形成的至少一个子层。使用较高结晶硅材料的氢处理形成下部结晶硅材料。该方法对于形成具有增强尺寸控制和增强性能的多晶硅基栅电极特别有用。

10. 发明申请

US20110318915A1 PROCESS TO MAKE HIGH-K TRANSISTOR DIELECTRICS 有权
标题翻译：制造高K晶体管电介质的工艺
公开(公告)号：US20110318915A1
公开(公告)日：2011-12-29
申请号：US13224059
申请日：2011-09-01
申请人： Liang-Gi Yao , Ming-Fang Wang , Shih-Chang Chen , Mong-Song Liang
发明人： Liang-Gi Yao , Ming-Fang Wang , Shih-Chang Chen , Mong-Song Liang
IPC分类号： H01L21/28 , B82Y40/00
CPC分类号： H01L21/0228 , C23C16/56 , H01L21/02145 , H01L21/02153 , H01L21/02159 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/02337 , H01L21/28185 , H01L21/28194 , H01L21/3141 , H01L21/31604 , H01L21/31616 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L29/4966 , H01L29/517
摘要： A method of reducing impurities in a high-k dielectric layer comprising the following steps. A substrate is provided. A high-k dielectric layer having impurities is formed over the substrate. The high-k dielectric layer being formed by an MOCVD or an ALCVD process. The high-k dielectric layer is annealed to reduce the impurities within the high-k dielectric layer.
摘要翻译：一种减少高k电介质层中的杂质的方法，包括以下步骤。提供基板。在衬底上形成具有杂质的高k电介质层。高k电介质层由MOCVD或ALCVD工艺形成。退火高k电介质层以减少高k电介质层内的杂质。

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